Tail gas pipeline of atomic layer deposition equipment

Abstract

The utility model discloses a tail gas pipeline of atomic layer deposition equipment, which comprises a first pipeline connected with a reaction chamber, a plurality of condensation plates are arranged in the first pipeline, and all the condensation plates are spirally arranged in the first pipeline in sequence. According to the tail gas pipeline of the atomic layer deposition equipment, due to the fact that the condensation plates distributed in the spiral downward step shape are arranged, the contact area between the condensation plates and tail gas in the pipeline is increased, dust contained in the tail gas can be effectively condensed and adsorbed, cavity pollution caused by tail gas backflow can be greatly reduced, the risk of particle pollution is reduced, and the product yield is improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of ALD equipment, and specifically relates to an exhaust pipeline of an atomic layer deposition equipment. Background Art

[0002] Atomic layer deposition (ALD) coating is a method that can deposit materials layer by layer on the surface of a substrate in the form of a single atomic film. This technology can accurately control the composition and morphology of materials at the nanoscale, has the advantages of depositing large-area uniform thin films, nanometer-level controllable film thickness, low-temperature deposition, and excellent performance suitable for various complex substrates (such as structures with high aspect ratios), and is widely used in the semiconductor industry.

[0003] The reaction principle of the ALD equipment is to alternately pass the gas phase precursor pulses into the reactor and chemically adsorb and react on the deposition substrate to form a deposited film, that is, first input the first reaction precursor into the reaction chamber and maintain it on the surface of the substrate material through chemical adsorption (saturated adsorption). When the second precursor is passed into the reaction chamber, it will react with the first precursor adsorbed on the surface of the substrate material. Repeat this process to obtain a film of predetermined thickness. In this process, the excess precursor will be discharged from the reaction chamber and absorbed in the exhaust gas treatment device at the rear end.

[0004] The existing ALD equipment includes a reaction chamber, an exhaust gas treatment device and a vacuum pump connected in sequence. The exhaust gas treatment device is connected to the reaction chamber through an exhaust gas pipeline. The vacuum pump extracts the exhaust gas from the reaction chamber through the exhaust gas pipeline. When the exhaust gas passes through the condenser installed in the pipeline, the dust will be adsorbed. The contact area between the condenser and the gas is relatively small, and the dust adsorption amount is relatively small. This will cause a large amount of dust to form in the exhaust gas treatment device, and there is a risk that the dust will flow back into the chamber to form particle pollution.

[0005] For example, the patent document with the authorization announcement number CN217188702U discloses an ALD tail gas treatment device, including a first air inlet, one end of which is connected to a reaction chamber, and the other end is connected to a primary decomposition device, the primary decomposition device is provided with a first air outlet at the end away from the first air inlet, the first air outlet is fixedly connected to one end of a connecting pipe, the end of the connecting pipe away from the first air outlet is connected to a secondary decomposition device, a second air inlet is provided on one side of the top of the secondary decomposition device, the connecting pipe is connected to the secondary decomposition device through the second air inlet, and the secondary decomposition device is provided with a second air outlet on the lower side of the end away from the second air inlet. The technical solution disclosed in the patent document also cannot solve the technical problems described above. Utility Model Content

[0006] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model provides an exhaust gas pipeline of an atomic layer deposition device, the purpose of which is to reduce the pollution of the reaction chamber caused by exhaust gas reflux, reduce the risk of particle contamination, and improve product yield.

[0007] In order to achieve the above-mentioned purpose, the technical solution adopted by the utility model is: the exhaust gas pipeline of the atomic layer deposition equipment includes a first pipeline connected to the reaction chamber, a condensation plate is arranged in the first pipeline, and multiple condensation plates are arranged and all condensation plates are arranged in sequence in a spiral shape in the first pipeline.

[0008] A support member is arranged in the first pipe, and the condensation plate is arranged on the support member.

[0009] The support member is a spiral structure and extends along the length direction of the first pipe.

[0010] An angle is formed between the width direction of the condensation plate and the length direction of the first pipe, and the angle is an acute angle.

[0011] The angle between the width direction of the condensation plate and the length direction of the first pipe is 45°.

[0012] The ratio between the length of the condensation plate and the radius of the first pipe is 1 / 3 to 2 / 3.

[0013] The ratio between the length of the condensation plate and the radius of the first pipe is 0.5.

[0014] The condensation plate is made of stainless steel, titanium alloy, aluminum alloy or carbon steel.

[0015] The first pipeline is made of stainless steel, titanium alloy, aluminum alloy or carbon steel.

[0016] The first pipeline is connected to the second pipeline, and the second pipeline is connected to the exhaust gas treatment device.

[0017] The exhaust gas duct of the atomic layer deposition equipment of the utility model increases the contact area with the exhaust gas in the duct by setting a plurality of condensation plates distributed in a spiral downward step shape, which can effectively condense and adsorb the dust contained in the exhaust gas and can greatly reduce the chamber pollution caused by the exhaust gas reflux, reduce the risk of particle contamination, and improve the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] This specification includes the following drawings, which show the following contents:

[0019] Figure 1 is a schematic diagram of the arrangement of the condensation plate;

[0020] Figure 2It is a schematic diagram of the structure of the tail gas pipeline of the atomic layer deposition equipment of the utility model;

[0021] Figure 3 It is a schematic diagram of the flow direction of forward airflow and reverse airflow;

[0022] Marked in the figure are: 1. condensation plate; 2. support member; 3. vacuum pump; 4. first pipeline; 5. second pipeline; 6. reaction chamber; 7. exhaust gas treatment device. DETAILED DESCRIPTION

[0023] The specific implementation methods of the utility model are further explained in detail below with reference to the accompanying drawings through the description of embodiments, with the aim of helping technicians in the field to have a more complete, accurate and in-depth understanding of the concept and technical solution of the utility model and facilitating its implementation.

[0024] It should be noted that, in the following embodiments, the “first” and “second” mentioned do not represent an absolute distinction in structure and / or function, nor do they represent a sequential order of execution, but are merely for the convenience of description.

[0025] like Figures 1 to 3 As shown, the utility model provides an exhaust gas pipeline of an atomic layer deposition device, including a first pipeline 4 connected to a reaction chamber 6, a condensation plate 1 is arranged in the first pipeline 4, a plurality of condensation plates 1 are arranged and all condensation plates 1 are arranged in sequence in a spiral shape in the first pipeline 4, and the surface of the condensation plate 1 is in contact with the exhaust gas entering the first pipeline 4.

[0026] Specifically, if Figure 2As shown, the ALD device includes a reaction chamber 6, an exhaust gas treatment device 7 and a vacuum pump 3 connected in sequence. The exhaust gas treatment device 7 is connected to the reaction chamber 6 through an exhaust gas pipeline. The vacuum pump 3 extracts the exhaust gas from the reaction chamber 6 through the exhaust gas pipeline. The exhaust gas will be sucked when passing through the exhaust gas treatment device 7 on the pipeline. The reaction principle of the ALD device is to alternately pass the gas phase precursor pulse into the reactor and chemically adsorb and react on the deposition substrate to form a deposited film, that is, first input the first reaction precursor into the reaction chamber 6 and maintain it on the surface of the substrate material through chemical adsorption (saturated adsorption). When the second precursor is passed into the reaction chamber 6, it will react with the first precursor adsorbed on the surface of the substrate material. Repeat this process to obtain a film of a predetermined thickness. In this process, the excess precursor will be discharged from the reaction chamber 6 and absorbed in the exhaust gas treatment device 7 at the rear end. A large amount of dust will be formed in the exhaust gas treatment device 7, and there is a risk that these dusts will flow back into the reaction chamber 6 to form particle pollution. Therefore, in the present invention, in order to reduce this risk, the structure of the exhaust gas pipe is improved, and a plurality of condensation plates 1 distributed in a spiral downward step shape are arranged in the vertical first pipe 4. The condensation plates 1 can increase the contact area with the exhaust gas in the first pipe 4. The condensation plates 1 can effectively condense and adsorb the dust contained in the exhaust gas, and the dust adsorption amount can be improved; and the condensation plates 1 are arranged at an angle, which can greatly reduce the chamber pollution caused by the exhaust gas reflux, reduce the risk of particle pollution, and improve the product yield.

[0027] like Figure 1 As shown, the first pipe 4 is a circular pipe with a hollow interior, a support 2 is arranged inside the first pipe 4, a condensation plate 1 is fixedly arranged on the support 2, the support 2 is attached to the inner circular surface of the first pipe 4, one end of the condensation plate 1 in the length direction is fixedly connected to the support 2, and the other end of the condensation plate 1 in the length direction is approximately located at the axis of the first pipe 4, and the length direction of the condensation plate 1 is perpendicular to the axis of the first pipe 4, that is, each condensation plate 1 extends radially along the first pipe 4. The support 2 is a spiral structure, and the support 2 extends along the length direction of the first pipe 4, and there is a certain distance between two upper and lower adjacent condensation plates 1.

[0028] Preferably, the condensation plate 1 is arranged tilted, such as Figure 1 and Figure 3 As shown, there is an angle between the width direction of the condensation plate 1 and the length direction of the first pipe 4, and the angle is an acute angle. The width direction of the condensation plate 1 is perpendicular to the length direction of the condensation plate 1, and the width of the condensation plate 1 is smaller than its length. The ratio between the length of the condensation plate 1 and the radius of the first pipe 4 is 1 / 3 to 2 / 3.

[0029] In this embodiment, the angle between the width direction of the condensation plate 1 and the length direction of the first pipe 4 is 45°, and the ratio between the length of the condensation plate 1 and the radius of the first pipe 4 is 0.5. In this way, the condensation plate 1 can effectively prevent gas reflux and reduce exhaust gas reflux, thereby greatly reducing the chamber pollution caused by exhaust gas reflux, reducing particle pollution, and improving product yield.

[0030] like Figure 3 As shown, when the gas is discharged from the reaction chamber 6 (forward flow, downward arrow in the figure), the spiral step-shaped condensation plate 1 in the first pipe 4 will not hinder the gas flow. If there is gas reflux, that is, the gas flows backward from the first pipe 4 into the reaction chamber 6, the spiral step-shaped condensation plate 1 will hinder the gas flow into the reaction chamber 6 (curved arrow in the figure), so that the reverse direction gas flow bounces back.

[0031] Preferably, the condensation plate 1 is made of metal, such as stainless steel, titanium alloy, aluminum alloy or carbon steel, etc. The first pipe 4 and the support member 2 are made of the same material as the condensation plate 1 .

[0032] like Figure 2 As shown, the upper end of the first pipe 4 is connected to the reaction chamber 6, the lower end of the first pipe 4 is connected to the second pipe 5, all the condensation plates 1 are arranged in a spiral shape in the first pipe 4 along the entire length direction of the first pipe 4, and the second pipe 5 is connected to the exhaust gas treatment device 7.

[0033] The above is an exemplary description of the utility model in conjunction with the accompanying drawings. Obviously, the specific implementation of the utility model is not limited to the above-mentioned method. As long as various non-substantial improvements are made using the method concept and technical solution of the utility model; or the above concept and technical solution of the utility model are directly applied to other occasions without improvement, they are all within the protection scope of the utility model.

Claims

1. An exhaust pipe of an atomic layer deposition device, comprising a first pipe connected to a reaction chamber, characterized in that: A condensation plate is arranged in the first pipe, and a plurality of condensation plates are arranged and all the condensation plates are arranged in sequence in a spiral shape in the first pipe.

2. The tail gas pipeline of the atomic layer deposition equipment according to claim 1, characterized in that: A support member is arranged in the first pipe, and the condensation plate is arranged on the support member.

3. The tail gas pipeline of the atomic layer deposition equipment according to claim 2, characterized in that: The support member is a spiral structure and extends along the length direction of the first pipe.

4. The tail gas pipeline of the atomic layer deposition equipment according to any one of claims 1 to 3, characterized in that: An angle is formed between the width direction of the condensation plate and the length direction of the first pipe, and the angle is an acute angle.

5. The tail gas pipeline of the atomic layer deposition equipment according to claim 4, characterized in that: The angle between the width direction of the condensation plate and the length direction of the first pipe is 45°.

6. The tail gas pipeline of the atomic layer deposition equipment according to any one of claims 1 to 3, characterized in that: The ratio between the length of the condensation plate and the radius of the first pipe is 1 / 3 to 2 / 3.

7. The tail gas pipeline of the atomic layer deposition equipment according to claim 6, characterized in that: The ratio between the length of the condensation plate and the radius of the first pipe is 0.

5.

8. The tail gas pipeline of the atomic layer deposition equipment according to any one of claims 1 to 3, characterized in that: The condensation plate is made of stainless steel, titanium alloy, aluminum alloy or carbon steel.

9. The tail gas pipeline of the atomic layer deposition equipment according to any one of claims 1 to 3, characterized in that: The first pipeline is made of stainless steel, titanium alloy, aluminum alloy or carbon steel.

10. The tail gas pipeline of the atomic layer deposition equipment according to any one of claims 1 to 3, characterized in that: The first pipeline is connected to the second pipeline, and the second pipeline is connected to the exhaust gas treatment device.

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