Ion beam sputtering coating equipment

Abstract

The utility model provides ion beam sputter coating equipment. The ion beam sputter coating equipment comprises a vacuum chamber, an ion beam sputter coating device and an ion beam sputter coating device, the heating device is arranged in the vacuum chamber, and the axial rotation of the heating device drives the substrate to axially rotate; the supporting plate is arranged in the vacuum chamber and is opposite to the heating device, and a first target material is placed on the supporting plate; the accelerating tube is arranged between the heating device and the supporting plate, and target particle beams sputtered on the surface of the first target are accelerated through the accelerating tube; the first ion beam sputtering structure is arranged in the vacuum chamber, and the output end of the first ion beam sputtering structure faces the supporting plate; and the second ion beam sputtering structure is arranged in the vacuum chamber, and the output end of the second ion beam sputtering structure faces the heating device. According to the ion beam sputter coating equipment provided by the utility model, the deposition rate of a target material and the coating quality are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing equipment, in particular to ion beam sputtering coating equipment. Background Art

[0002] Physical vapor deposition (PVD) is a surface treatment technology that converts thin film materials into particle state under vacuum conditions, and then quickly deposits the particle state thin film materials on the substrate to form a thin film on the substrate surface. Among them, ion beam sputtering deposition (IBSD) is one of the important ways to achieve PVD, but the deposition efficiency of ion beam sputtering deposition on large-area substrates is low, and the deposition rate is unstable, so that the thickness of the coating is uneven, which reduces the quality of the substrate coating and the adhesion of the film. Utility Model Content

[0003] In view of the above shortcomings of the prior art, the purpose of the utility model is to provide an ion beam sputtering coating device. Through the ion beam sputtering coating device in the utility model, the low deposition efficiency of ion beam sputtering deposition on large-area substrates and the unstable deposition rate, which results in uneven coating thickness, reduce the quality of substrate coating and the adhesion of the thin film, are effectively improved.

[0004] In order to achieve the above-mentioned purpose and other related purposes, the utility model provides an ion beam sputtering coating device, the ion beam sputtering coating device comprising:

[0005] Vacuum chamber;

[0006] A heating device is arranged in the vacuum chamber, a substrate is arranged on the heating device, and an axial rotation of the heating device drives an axial rotation of the substrate;

[0007] A support plate is arranged in the vacuum chamber and opposite to the heating device, and the first target is placed on the support plate;

[0008] An accelerating tube, disposed between the heating device and the supporting plate, through which the target material particle beam sputtered on the surface of the first target material is accelerated;

[0009] a first ion beam sputtering structure, disposed in the vacuum chamber, with an output end of the first ion beam sputtering structure disposed toward the support plate; and

[0010] A second ion beam sputtering structure is arranged in the vacuum chamber, and a second target material is placed on the second ion beam sputtering structure. An output end of the second ion beam sputtering structure is arranged toward the heating device.

[0011] In one embodiment of the utility model, an air inlet hole and an exhaust hole are arranged on both sides of the vacuum chamber, the air inlet hole is arranged on the top plate of the vacuum chamber, and the exhaust hole is arranged on the bottom plate of the vacuum chamber.

[0012] In one embodiment of the utility model, the ion beam sputtering coating device further comprises a support rod, one end of which is fixedly connected to the support plate, and the other end of which is fixedly connected to the bottom plate.

[0013] In an embodiment of the utility model, the ion beam sputtering coating equipment further comprises a connecting rod, one end of which is fixedly connected to the heating device.

[0014] In one embodiment of the utility model, the ion beam sputtering coating equipment further comprises a driving device, and the output end of the driving device is drivingly connected to the other end of the connecting rod.

[0015] In an embodiment of the present invention, the first ion beam sputtering structure comprises an ion beam emitting device, and an output end of the ion beam emitting device is arranged toward the supporting plate.

[0016] In one embodiment of the utility model, the first ion beam sputtering structure further includes a first rotating device, the axis of the first rotating device is fixedly connected to one end of the ion beam emitting device, and the axial rotation of the first rotating device drives the ion beam emitting device to rotate.

[0017] In one embodiment of the present invention, the second ion beam sputtering structure includes a magnetron cathode, the second target material is fixedly disposed on the magnetron cathode, and an output end of the magnetron cathode is disposed toward the substrate.

[0018] In one embodiment of the utility model, the second ion beam sputtering structure further includes a second rotating device, the axis of the second rotating device is fixedly connected to one end of the magnetron cathode, and the axial rotation of the first rotating device drives the magnetron cathode to rotate.

[0019] In one embodiment of the present invention, the second ion beam sputtering structure further includes a controllable power supply, one end of the controllable power supply is electrically connected to one end of the magnetron cathode, and the other end of the controllable power supply is grounded.

[0020] In summary, the utility model provides an ion beam sputtering coating device, which performs sputtering coating through an ion beam emitting device, and controls the target particles to directly bombard the substrate through a magnetron cathode, thereby improving the uniformity, density, stability and quality of thin film deposition. The sputtered target particle beam is accelerated and focused through an accelerating tube, thereby improving the deposition efficiency of the target particle beam and the adhesion of the thin film. By rotating the ion beam emitting device, the magnetron cathode and the substrate, the utilization rate of the target material and the uniformity of the coating thickness are improved. By introducing process gas into the vacuum chamber, the composition and properties of the coating can be accurately controlled, the ion beam sputtering process can be stabilized and the reaction atmosphere can be controlled.

[0021] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0023] Figure 1 The utility model is a structural diagram of an ion beam sputtering coating device.

[0024] Component number description

[0025] 100, vacuum chamber; 200, heating device; 210, connecting rod; 220, driving device; 300, substrate; 400, target material; 500, supporting structure; 510, supporting plate; 520, supporting rod; 600, accelerating tube; 610, fixing rod; 700, first ion beam sputtering structure; 710, ion beam emitting device; 720, first rotating device; 800, second ion beam sputtering structure; 810, magnetron cathode; 820, second rotating device; 830, controllable power supply; 900, gas input device. DETAILED DESCRIPTION

[0026] The following describes the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and the features in the embodiments can be combined with each other without conflict. It should also be understood that the terms used in the embodiments of the present invention are intended to describe specific implementation schemes, rather than to limit the scope of protection of the present invention. The test methods for which specific conditions are not specified in the following examples are usually carried out under conventional conditions or under the conditions recommended by the manufacturers.

[0027] See also Figure 1 . It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the utility model, so they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by the utility model, should still fall within the scope of the technical content disclosed by the utility model. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the utility model. Changes or adjustments in their relative relationships should also be regarded as the scope of the implementation of the utility model without substantially changing the technical content.

[0028] When numerical ranges are given in the embodiments, it should be understood that unless otherwise specified in the present invention, both endpoints of each numerical range and any value between the two endpoints can be selected. Unless otherwise defined, all technical and scientific terms used in the present invention are in accordance with the prior art mastery of those skilled in the art and the description of the present invention, and any prior art methods, equipment and materials similar or equivalent to the methods, equipment and materials in the embodiments of the present invention can also be used to implement the present invention.

[0029] In one embodiment of the utility model, the present application provides an ion beam sputtering coating device that can be used to coat a substrate. The coating material includes but is not limited to metals, alloys, and silicides. A substrate with a clean surface is fixed on a heating device for heating, and the required target material is placed on a magnetron cathode and a support plate. Process gas is introduced into the vacuum chamber, and the target material is sputtered by the magnetron cathode and the ion beam emission device, so that the surface of the target material set on the magnetron cathode generates a target material particle beam that is directly deposited on the substrate. The target material particle beam generated on the surface of the target material placed on the support plate passes through an accelerating tube and is deposited on the substrate to form a thin film. The ion beam sputtering coating device provided by the present application improves the deposition efficiency, uniformity, stability, and quality of the target material particle beam.

[0030] See also Figure 1 In one embodiment of the utility model, an ion beam sputtering coating device provided by the present application includes a vacuum chamber 100, a heating device 200, a support structure 500, an accelerating tube 600, a first ion beam sputtering structure 700 and a second ion beam sputtering structure 800. The heating device 200, the supporting structure 500, the accelerating tube 600, the first ion beam sputtering structure 700 and the second ion beam sputtering structure 800 are all arranged in the vacuum chamber 100. The heating device 200 is arranged close to the top plate of the vacuum chamber 100, and the substrate 300 is fixedly arranged on the heating device 200. The supporting structure 500 is arranged on the bottom plate of the vacuum chamber 100, and the supporting structure 500 is arranged opposite to the heating device 200. The accelerating tube 600 is arranged between the heating device 200 and the supporting structure 500, and the target material 400 is arranged on the first ion beam sputtering structure 700 and the second ion beam sputtering structure 800. The output end of the first ion beam sputtering structure 700 is disposed toward the support structure 500 , and the output end of the second ion beam sputtering structure 800 is disposed toward the heating device 200 .

[0031] See also Figure 1As shown, in one embodiment of the utility model, air inlet holes and exhaust holes are provided on opposite sides of the vacuum chamber 100. An ion beam sputtering coating device provided in the present application also includes a gas input device 900, which is arranged outside the vacuum chamber 100, and the output end of the gas input device 900 is connected to the air inlet hole. The gas input device 900 introduces process gas into the vacuum chamber, wherein the process gas includes an inert gas and a reactive gas, and the composition of the process gas can be set according to the coating requirements of the substrate 300. The role of the inert gas is to stabilize the ion beam sputtering process and control the reaction atmosphere, thereby improving the quality of the coating. The role of the reactive gas is to react with the target particle beam sputtered on the surface of the target 400, thereby changing the composition, structure and properties of the thin film, realizing the synthesis of specific materials and improving the quality of the thin film. In some embodiments, the ion beam sputtering coating equipment also includes a vacuum exhaust device, the input end of the vacuum exhaust device is connected to the exhaust hole, and the vacuum exhaust device evacuates the inside of the vacuum chamber 100 through the exhaust hole, thereby ensuring that the vacuum chamber 100 is in a normal working environment and improving the quality of the coating.

[0032] See also Figure 1 As shown, in one embodiment of the utility model, an ion beam sputtering coating device provided by the present application further includes a connecting rod 210 and a driving device 220, one end of the connecting rod 210 is fixedly connected to the axial direction of the heating device 200, and the other end is drivingly connected to the output end of the driving device 220. The driving device 220 drives the connecting rod 210 to rotate axially, and drives the heating device 210 and the substrate 300 to rotate, thereby ensuring the uniformity of the target particle beam deposition on the substrate 300 and improving the quality of the coating.

[0033] See also Figure 1 As shown, in one embodiment of the present invention, the support structure 500 includes a support plate 510 and a support rod 520, one end of the support rod 520 is fixedly connected to the axis of the support plate 510, and the other end is fixedly connected to the top plate of the vacuum chamber 100. The target material 400 includes a first target material and a second target material, the first target material and the second target material are made of the same material, and the first target material is placed on the support plate 510. The accelerating tube 600 is arranged between the heating device 200 and the supporting plate 510, the input end of the accelerating tube 600 is arranged corresponding to the position of the supporting plate 510, and the output end of the accelerating tube 600 is arranged corresponding to the position of the heating device 200. Among them, the accelerating tube 600 is, for example, a cylinder. An ion beam sputtering coating device provided in the present application also includes at least two fixed rods 610, one end of the fixed rod 610 is fixedly connected to the side of the accelerating tube 600, and the other end is fixedly connected to the vacuum chamber 100. The accelerating tube 600 is fixedly connected to the vacuum chamber 100 through the fixed rod 610.

[0034] See also Figure 1As shown, in one embodiment of the present invention, the first ion beam sputtering structure 700 includes an ion beam emitting device 710 and a first rotating device 720. One end of the ion beam emitting device 710 is fixedly connected to the axis of the first rotating device 720, and a first connection point is formed at the connection between the ion beam emitting device 710 and the first rotating device 720. The first rotating device 720 is, for example, a rotating shaft, and the axis of the first rotating device 720 can be transmission-connected to the output end of the driving motor, so that the driving motor drives the first rotating device 720 to rotate axially. The rotation of the first rotating device 720 drives the ion beam emitting device 710 to move around the first connection point, thereby changing the position where the ion beam emitted from the output end of the ion beam emitting device 710 reaches the first target material, so as to improve the utilization rate of the target material 400. The ion beam emitting device 710 can adjust the parameters of the emitted ion beam. By adjusting the parameters such as the energy, beam current density and tilt angle of the ion beam, the film thickness, composition and structure of the target particle beam deposition can be accurately controlled to meet the coating requirements of the substrate 300. In other embodiments, a plurality of first ion beam sputtering structures 700 may be provided to sputter the first target material on the support plate 510 , and the plurality of first ion beam sputtering structures 700 may be provided according to the coating requirements of the substrate 300 .

[0035] See also Figure 1 As shown, in one embodiment of the utility model, the second ion beam sputtering structure 800 includes a magnetron cathode 810, a second rotating device 820 and a controllable power supply 830. One end of the magnetron cathode 810 is fixedly connected to the axis of the second rotating device 820, and the other end is provided with a second target material, and a second connection point is formed at the connection between the magnetron cathode 810 and the second rotating device 820. One end of the magnetron cathode 810 is electrically connected to one end of the controllable power supply 830, and the other end of the controllable power supply 830 is grounded. The second rotating device 820 is, for example, a rotating shaft, and the axis of the second rotating device 820 can be transmission-connected to the output end of the driving motor, so that the driving motor drives the second rotating device 820 to rotate axially. The rotation of the second rotating device 820 drives the magnetron cathode 810 to move around the second connection point, thereby changing the position of the ion beam emitted from the surface of the magnetron cathode 810 to reach the substrate 300, so as to improve the uniformity of the coating of the substrate 300. The function of the magnetron cathode 810 is that when high-energy particles are used to bombard the target material 400 at one end of the magnetron cathode, a large number of particles are generated on the surface of the target material 400. The high-energy particles can be introduced from the air inlet, and the high-energy particles are, for example, argon particles. The magnetron cathode 810 generates a strong magnetic field, which gathers a large number of particles generated on the surface of the target material 400 in a particle beam and moves along a straight line to the substrate 300 to form a thin film. The controllable power supply 820 provides energy to the magnetron cathode 810, so that the magnetron cathode 810 generates a moving magnetic field of the particle beam. By adjusting the controllable power supply 820, the magnetic field strength generated at the output end of the magnetron cathode 810 can be changed.

[0036] See also Figure 1 As shown, in one embodiment of the utility model, when the ion beam sputtering coating device provided by the present application is used to coat the substrate 300, the substrate 300 needs to be fixed on the heating device 200. Then, according to the coating requirements of the substrate 300, the corresponding target material 400 is set on the support plate 510 and the magnetron cathode 810. Then the driving device 900 is controlled to drive the heating device 200 and the substrate 300 to rotate, and the process gas is introduced into the vacuum chamber 100 through the air inlet. The controllable power supply 820 supplies power to the magnetron cathode 810, and by controlling the rotation of the magnetron cathode 810, the surface of the second target material collides with the particles in the process gas, thereby generating a target material particle beam and emitting it to the substrate 300 for cleaning and deposition. The ion beam emitting device 710 emits an ion beam to the surface of the first target material, so that the target material particle beam sputtered from the surface of the first target material is deposited on the surface of the substrate 300 after being accelerated and focused by the accelerating tube, forming a thin film layer. The second ion beam sputtering structure 800 is used to bombard the thin film on the surface of the substrate 300, so that the pores inside the thin film are reduced, the density and sealing of the thin film are enhanced, and the adhesion of the thin film is improved.

[0037] In summary, the utility model provides an ion beam sputtering coating device, which performs sputtering coating through an ion beam emitting device, and controls the target particles to directly bombard the substrate through a magnetron cathode, thereby improving the uniformity, density, stability and quality of thin film deposition. The sputtered target particle beam is accelerated and focused through an accelerating tube, thereby improving the deposition efficiency of the target particle beam and the adhesion of the thin film. By rotating the ion beam emitting device, the magnetron cathode and the substrate, the utilization rate of the target material and the uniformity of the coating thickness are improved. By introducing process gas into the vacuum chamber, the composition and properties of the coating can be accurately controlled, the ion beam sputtering process can be stabilized and the reaction atmosphere can be controlled. Therefore, the utility model effectively overcomes some practical problems in the prior art and has a high utilization value and use significance.

[0038] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. An ion beam sputtering coating device, characterized in that: include: Vacuum chamber; A heating device is arranged in the vacuum chamber, a substrate is arranged on the heating device, and an axial rotation of the heating device drives an axial rotation of the substrate; A support plate is arranged in the vacuum chamber and opposite to the heating device, and the first target is placed on the support plate; An accelerating tube, disposed between the heating device and the supporting plate, through which the target material particle beam sputtered on the surface of the first target material is accelerated; A first ion beam sputtering structure is disposed in the vacuum chamber, and an output end of the first ion beam sputtering structure is disposed toward the support plate; as well as A second ion beam sputtering structure is arranged in the vacuum chamber, and a second target material is placed on the second ion beam sputtering structure. An output end of the second ion beam sputtering structure is arranged toward the heating device.

2. The ion beam sputtering coating device according to claim 1, characterized in that: An air inlet and an air exhaust hole are arranged on both sides of the vacuum chamber. The air inlet is arranged on the top plate of the vacuum chamber, and the air exhaust hole is arranged on the bottom plate of the vacuum chamber.

3. The ion beam sputtering coating device according to claim 2, characterized in that: The ion beam sputtering coating device also includes a support rod, one end of which is fixedly connected to the support plate, and the other end of which is fixedly connected to the bottom plate.

4. The ion beam sputtering coating device according to claim 1, characterized in that: The ion beam sputtering coating equipment also includes a connecting rod, one end of which is fixedly connected to the heating device.

5. The ion beam sputtering coating device according to claim 4, characterized in that: The ion beam sputtering coating equipment also includes a driving device, and an output end of the driving device is drivingly connected to the other end of the connecting rod.

6. The ion beam sputtering coating device according to claim 1, characterized in that: The first ion beam sputtering structure comprises an ion beam emitting device, and an output end of the ion beam emitting device is arranged toward the supporting plate.

7. The ion beam sputtering coating device according to claim 6, characterized in that: The first ion beam sputtering structure further includes a first rotating device, the axis of which is fixedly connected to one end of the ion beam emitting device, and the axial rotation of the first rotating device drives the ion beam emitting device to rotate.

8. The ion beam sputtering coating device according to claim 7, characterized in that: The second ion beam sputtering structure includes a magnetron cathode, the second target material is fixedly arranged on the magnetron cathode, and the output end of the magnetron cathode is arranged toward the substrate.

9. The ion beam sputtering coating device according to claim 8, characterized in that: The second ion beam sputtering structure further includes a second rotating device, the axis of which is fixedly connected to one end of the magnetron cathode, and the axial rotation of the first rotating device drives the magnetron cathode to rotate.

10. The ion beam sputtering coating device according to claim 9, characterized in that: The second ion beam sputtering structure further includes a controllable power supply, one end of the controllable power supply is electrically connected to one end of the magnetron cathode, and the other end of the controllable power supply is grounded.

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