Protective structure

By designing a protective structure with integrated protection devices and anti-reverse diodes, the problem of equipment space occupation caused by independent arrangement of protection devices and anti-reverse structures in the prior art is solved, and the equipment is miniaturized and stability is improved.

CN222600980UActive Publication Date: 2025-03-11ZUNYI ZHUXINWEI SEMICON TECH CO LTD
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Patent Information

Application Number
CN202421277338.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-05
Publication Date
2025-03-11
Estimated Expiration
2034-06-05

AI Technical Summary

Technical Problem

In existing electronic devices, protective devices and anti-reverse connection structures are independently arranged, resulting in large space occupancy of equipment and making it difficult to achieve miniaturization.

Method used

A protective structure with integrated protection devices and anti-reverse diodes is designed, integrated into one structure through common pins and partitions, and packaged with thermally conductive protective layers.

Benefits of technology

It effectively reduces the space occupancy of the equipment, simplifies the structure, improves the stability and service life of the equipment, and reduces the number of packaging times.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a protection structure and relates to an electronic device, a protection device, an anti-reverse diode and a common pin. The common pin comprises a separation part and a pin part; the protection device comprises a protection crystal grain, a pin I, a separation part and a heat conduction protection layer; the anti-reverse diode comprises an anti-reverse crystal grain, a second pin, a separation part and a heat conduction protection layer. The protective crystal grain frame is arranged below the separation part, and one end of the protective crystal grain frame is electrically connected with the separation part; the anti-reverse crystal grain frame is arranged above the separation part, and the positive electrode of the anti-reverse crystal grain frame is electrically connected with the separation part; the first pin, the second pin and the main body part of the pin part are all arranged outside the heat conduction protection layer, the first end of the first pin is connected with the other end of the protection crystal grain, the first end of the second pin is connected with the negative electrode of the anti-reverse crystal grain, and the first end of the pin part is connected with the separation part; according to the utility model, the purpose of equipment miniaturization is effectively realized.
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Description

Technical Field

[0001] The utility model relates to an electronic device, in particular to a protective structure. Background Art

[0002] The protective devices in electronic equipment mostly refer to structures such as overvoltage protection or surge protection, which are used to prevent excessive line voltage or large surges to protect the electronic equipment.

[0003] Secondly, when electronic equipment is connected to a power source, it is necessary to prevent the positive and negative poles from being reversed to avoid unnecessary damage to components. The method of preventing reverse connection is usually to set up a reverse connection structure, such as a diode reverse connection circuit.

[0004] Therefore, most electronic devices have protective devices and anti-reverse connection structures, but the independent anti-reverse connection structures and protective devices do not conform to the trend of miniaturization of electronic devices. Utility Model Content

[0005] 1. Technical issues to be resolved

[0006] In view of the deficiencies of the prior art, the utility model provides a protection structure to solve the technical problems that the independent anti-reverse connection structures and protection devices in the prior art do not conform to the trend of equipment miniaturization improvement.

[0007] (II) Technical solution

[0008] In order to achieve the above objectives, the present invention is implemented through the following technical solutions:

[0009] The application provides a protective structure, including:

[0010] Protection devices, anti-reverse diodes and common pins;

[0011] The common pin includes a separation portion and a pin portion;

[0012] The protection device comprises a protection crystal grain, a pin 1, a separation part and a heat-conducting protection layer;

[0013] The anti-reverse diode comprises an anti-reverse grain, a second pin, a separation part and a heat-conducting protection layer;

[0014] The protection crystal grain is mounted below the partition, and one end of the protection crystal grain is electrically connected to the partition;

[0015] The anti-reverse crystal grain is mounted above the partition, and its positive electrode is electrically connected to the partition;

[0016] The protective grains, the anti-reflection grains and the separation parts are integrally wrapped in the thermal conductive protective layer;

[0017] The main parts of pin one, pin two and the pin part are all arranged outside the thermal conductive protective layer, and the first end of pin one is connected to the other end of the protective grain, the first end of pin two is connected to the negative electrode of the anti-reverse grain, and the first end of the pin part is connected to the partition part.

[0018] Furthermore, the protection device is a transient voltage suppressor tube or a semiconductor discharge tube.

[0019] Furthermore, the thermally conductive protective layer is an epoxy resin layer.

[0020] Furthermore, the surface roughness of the partition portion is greater than 0.01 um and less than 100 um.

[0021] Furthermore, a boss 1 is provided on the top of the partition portion, and the top of the boss 1 is welded to the anti-reflection grain provided thereon.

[0022] Furthermore, the boss 1 is annular and has a heat dissipation groove therein.

[0023] Furthermore, a second boss is provided at the bottom of the partition portion, and the bottom of the second boss is welded to a protective crystal grain disposed therebelow.

[0024] Furthermore, an annular groove coaxial with the boss 2 and opened on the bottom of the partition part is provided on the outer side of the boss 2.

[0025] Furthermore, a first boss is provided at the top of the partition part, and a second boss is provided at the bottom of the partition part;

[0026] The top of the boss 1 is welded to the anti-reflection grain arranged above it;

[0027] The bottom of the second boss is welded to the protective crystal grain arranged below it;

[0028] The boss 1 is annular and has a heat dissipation groove therein;

[0029] The outer side of the boss 2 is provided with an annular groove coaxial with the boss 2 and opened on the bottom of the partition part.

[0030] Furthermore, the second end of the pin one, the second end of the pin two and the second end of the pin portion are all arranged below the thermally conductive protective layer and are in contact with the bottom of the thermally conductive protective layer.

[0031] (III) Beneficial effects

[0032] Compared with the prior art, the protective structure provided by the utility model has the following beneficial effects:

[0033] By integrating the protection device and the anti-reverse diode into one structure, the space occupied by the equipment can be effectively reduced, which helps to miniaturize the equipment; setting up a partition part can effectively avoid the impact of the heating of the protection grain on the anti-reverse grain, which is convenient for improving the service life and stability of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 A schematic diagram of an exploded structure of a protective die, an anti-reverse die, a common pin, a pin 1, and a pin 2 in a protective structure provided in an embodiment;

[0036] Figure 2 A bottom perspective view of a protective structure provided in an embodiment;

[0037] Figure 3 Schematic diagram of the connection relationship between the protection device, the anti-reverse diode, the external power supply and the application circuit in the embodiment.

[0038] In the figure: 1. Protective grain; 2. Anti-reflection grain; 3. Separation part; 4. Pin part; 5. Pin one; 6. Pin two; 7. Thermal conductive protective layer; 8. Boss one; 9. Boss two; 10. Heat dissipation groove; 11. Annular groove. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical solution and advantages of the embodiments of the utility model clearer, the technical solution in the embodiments of the utility model is described clearly and completely. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0040] In order to solve the defect that in existing electronic equipment, when protective devices and anti-reverse connection structures are independently arranged, they need to occupy a large space, which is not conducive to the miniaturization of the equipment, the utility model provides a new protective structure for solving the problems existing in the background technology.

[0041] In order to facilitate a clear understanding of the content of the present application, the present application will now be described in detail in conjunction with specific embodiments and the accompanying drawings.

[0042] Example

[0043] Combined with Figure 1 (In the figure, the whole composed of the protective grain 1, the anti-reverse grain 2, the common pin, the pin one 5, and the pin two 6 is presented in the form of an exploded view, and the partition part 3 is presented in the form of a partial cross-section). This embodiment provides a protective structure, which consists of a protective device, an anti-reverse diode and a common pin.

[0044] like Figure 1 In order to reduce the complexity of the device and to separate the protection device and the anti-reverse diode so that both can work normally, in this embodiment, the common pin is divided into a separation part 3 and a pin part 4.

[0045] The material of the common pin is copper (the partition part 3 and the pin part 4 are both made of copper, or the partition part 3 can be made of copper, while the pin part 4 is the same material as pins one and two for conduction), thereby increasing the heat dissipation performance of the device and ensuring the stability of the device.

[0046] Secondly, in this embodiment, the protection device includes a protection grain 1, a pin 1 5, a partition 3 and a thermally conductive protection layer 7; and the anti-reverse diode includes an anti-reverse grain 2, a pin 2 6, a partition 3 and a thermally conductive protection layer 7.

[0047] That is, the partition part 3 is used as a common part and is shared by the common pin, the protection device and the anti-reverse diode; and the heat-conducting protection layer 7 is shared by the protection device and the anti-reverse diode.

[0048] Because a large current will pass through the anti-reverse diode when it is working normally, it is easy to generate a lot of heat, while under normal circumstances, almost no current will pass through the protection device, so no heat will be generated. Therefore, in order to avoid the thermal stress caused by the temperature difference when the two are integrated together, which will affect the stability and reliability of the entire device, in this embodiment, the protection grain 1 is mounted (welded) below the partition part 3, and the anti-reverse grain 2 is mounted (welded) above the partition part 3, and one end of the protection grain 1 and the positive electrode of the anti-reverse grain 2 are electrically connected to the partition part 3.

[0049] That is, the partition portion 3 serves as a common electrode.

[0050] At the same time, the whole formed by the protective grain 1, the anti-reverse grain 2, and the partition part 3 is wrapped in the thermal conductive protective layer 7; and the main body of the pin 1 5, the pin 2 6 and the pin part 4 are all arranged outside the thermal conductive protective layer 7, and the first end of the pin 1 5 is connected to the other end of the protective grain 1, the first end of the pin 2 6 is connected to the negative pole of the anti-reverse grain 2, and the first end of the pin part 4 is connected to one end of the partition part 3.

[0051] That is, through the above-mentioned arrangement, the protection device and the anti-reverse diode are integrated into a structure, thereby effectively reducing the overall space occupation of the equipment, which is convenient for the improvement of the miniaturization of the equipment; the arrangement of the partition part 3 can effectively separate the protection grain 1 and the anti-reverse grain 2, which is convenient for the heat dissipation of the protection device and ensures the stability of the protection device; secondly, the arrangement in which the anti-reverse grain 2 and the protection grain 1 are respectively connected to the partition part 3 can further reduce the influence of the heat generated by the anti-reverse grain 2 on the protection grain 1 and further ensure the stability of the equipment.

[0052] The provision of the heat-conducting protective layer 7 can effectively reduce the number of packaging times of the device, and the simultaneous packaging of the protective device and the anti-reverse diode can be completed in one packaging.

[0053] The protection device is a transient voltage suppressor (TVS) or a semiconductor discharge tube (TSS), and the thermal conductive protection layer 7 is made of epoxy resin.

[0054] In some embodiments, refer to the attached Figure 1 In order to further increase the heat dissipation efficiency and ensure the stability of the equipment and avoid the influence of thermal stress on the anti-reflection grain 2, a boss 8 is provided on the top of the partition part 3, and the top of the boss 8 is welded to the anti-reflection grain 2 arranged thereon.

[0055] At this time, the anti-reflection grain 2 is mounted on the top of the boss 8, which increases the distance from the protection grain 1, further avoids the influence of thermal stress on it, and ensures the stability of the equipment.

[0056] In some embodiments, refer to the attached Figure 1 In order to further increase the heat dissipation efficiency and avoid the influence of thermal stress on the anti-reflection grain 2, the boss 8 is also made into a ring shape, and a heat dissipation groove 10 is provided inside it.

[0057] The heat dissipation grooves 10 , on the one hand, increase the surface area of ​​the partition portion 3 , and on the other hand, play a supporting role for the anti-reflection grains 2 , further reducing the influence of thermal stress on the anti-reflection grains 2 .

[0058] In some embodiments, refer to the attached Figure 1 In order to further increase the heat dissipation efficiency and avoid the influence of thermal stress on the anti-reflection grain 2, a second boss 9 is provided at the bottom of the partition part 3, and the bottom of the second boss 9 is welded to the protective grain 1 arranged thereunder, and an annular groove 11 surrounding the second boss 9 is provided on the bottom of the partition part 3;

[0059] In some embodiments, the annular groove 11 and the heat dissipation groove 10 are coaxially distributed.

[0060] Secondly, the surface roughness of the partition portion 3 is set to be greater than 0.01 um and less than 100 um.

[0061] The second boss 9 enables the protective grain 1 to be mounted below the partition 3 , and the annular groove 11 further increases the surface area of ​​the partition 3 . Therefore, as mentioned above, the stability of the device is further guaranteed and the influence of thermal stress on the anti-reflection grain 2 is reduced.

[0062] The setting of the surface roughness of the partition part 3, on the one hand, makes it easier to weld the anti-reflection grain 2 and the protection grain 1 to the partition part 3 during equipment preparation, and the welding strength is greater. On the other hand, the rough surface thermal stress is more dispersed, thereby reducing the impact of thermal stress. The rough surface has a larger surface area, which is beneficial to heat dissipation and increases the thermal reliability of the device.

[0063] In some embodiments, refer to the attached Figure 2 In order to facilitate the use of the equipment and subsequent welding, the second end of pin 1 5, the second end of pin 2 6 and the second end of pin part 4 are all arranged below the thermal conductive protection layer 7 and are all in contact with the bottom of the thermal conductive protection layer 7, and the bottom of the second end of pin 1 5, the bottom of the second end of pin 2 6 and the bottom of the second end of pin part 4 are coplanar and maintain a consistent height, thereby further facilitating the subsequent installation and use of the equipment.

[0064] refer to Figure 3 When the device is in use, the second end of the pin part 4 is connected to the positive electrode of the external power supply, and the second end of the pin 6 is connected to the positive electrode of the application circuit. Due to the existence of the anti-reverse diode, when the positive electrode of the external power supply is connected to the pin part 4, the external power supply can be loaded on the application circuit to realize the circuit function; if the negative electrode of the external power supply is connected to the pin part 4, the anti-reverse diode will appear in the reverse cut-off state, thereby realizing circuit protection.

[0065] When a large voltage or surge occurs in the external power supply, the protection device can protect the circuit and discharge the surge current through pin 5 to achieve overvoltage protection function.

[0066] In summary, the protection structure provided by the present application has the following beneficial effects compared with the prior art:

[0067] 1. Integrated protection devices and anti-reverse diodes contribute to the miniaturization of equipment.

[0068] 2. The equipment has a simple structure and can effectively reduce the number of packaging times.

[0069] 3. The setting of the partition part 3 reduces the complexity of the device and facilitates the heat dissipation of the device.

[0070] 4. The arrangement of boss 1 8, boss 2 9, annular groove 11, etc. further increases the heat dissipation efficiency of the device and improves the stability of the device.

[0071] 5. The roughness setting further increases the heat dissipation capacity of the equipment, reduces the impact of thermal stress, and improves the stability of the equipment.

[0072] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0073] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A protective structure, characterized in that: include: Protection devices, anti-reverse diodes and common pins; The common pin includes a separation portion and a pin portion; The protection device comprises a protection crystal grain, a pin 1, a separation part and a heat-conducting protection layer; The anti-reverse diode comprises an anti-reverse grain, a second pin, a separation part and a heat-conducting protection layer; The protection crystal grain is mounted below the partition, and one end of the protection crystal grain is electrically connected to the partition; The anti-reverse crystal grain is mounted above the partition, and its positive electrode is electrically connected to the partition; The protective grains, the anti-reflection grains and the separation parts are integrally wrapped in the thermal conductive protective layer; The main parts of pin one, pin two and the pin part are all arranged outside the thermal conductive protective layer, and the first end of pin one is connected to the other end of the protective grain, the first end of pin two is connected to the negative electrode of the anti-reverse grain, and the first end of the pin part is connected to the partition part.

2. A protective structure according to claim 1, characterized in that: The protection device is a transient voltage suppression tube or a semiconductor discharge tube.

3. A protective structure according to claim 1, characterized in that: The heat-conducting protective layer is an epoxy resin layer.

4. A protective structure according to claim 1, characterized in that: The surface roughness of the partition portion is greater than 0.01 um and less than 100 um.

5. A protective structure according to claim 1, characterized in that: A boss 1 is arranged on the top of the partition part, and the top of the boss 1 is welded to the anti-reflection grain arranged above the boss 1.

6. A protective structure according to claim 5, characterized in that: The boss 1 is annular and has a heat dissipation groove therein.

7. A protective structure according to claim 1, characterized in that: A second boss is arranged at the bottom of the partition part, and the bottom of the second boss is welded to the protective crystal grain arranged thereunder.

8. A protective structure according to claim 7, characterized in that: The outer side of the boss 2 is provided with an annular groove coaxial with the boss 2 and opened on the bottom of the partition part.

9. A protective structure according to claim 1, characterized in that: The top of the partition part is provided with a boss 1, and the bottom of the partition part is provided with a boss 2; The top of the boss 1 is welded to the anti-reflection grain arranged above it; The bottom of the second boss is welded to the protective crystal grain arranged below it; The boss 1 is annular and has a heat dissipation groove therein; The outer side of the boss 2 is provided with an annular groove coaxial with the boss 2 and opened on the bottom of the partition part.

10. A protective structure according to claim 1, characterized in that: The second end of the first pin, the second end of the second pin and the second end of the pin portion are all arranged below the thermal conductive protective layer and are in contact with the bottom of the thermal conductive protective layer.