Plasma processing apparatus and method and apparatus for measuring DC potential

US20050095732A1Inactive Publication Date: 2005-05-05TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
Publication Date
2005-05-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

In a plasma processing apparatus, a member for propagating high frequency from a high frequency power supply and / or to which the high frequency is applied. A power feed rod is electromagnetically shielded between a matching unit and a bottom plate of a chamber by a coaxial cylindrical conductor connected to a ground potential. A surface potential system disposed in an appropriate distance from the power feed rod in radius direction is installed in the cylindrical conductor, and measures in a non-contact state the electrostatic surface potential of the power feed rod through electrostatic capacitance and provides a controller with a surface potential detection signal including surface potential measurement value information. The controller performs a required signal processing or operation processing on the basis of the surface potential detection signal from the surface potential system, thereby obtaining the measurement value of the DC potential on the power feed rod.
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Description

FIELD OF THE INVENTION

[0001] The present invention relates to a plasma processing apparatus; and, more particularly, to a method and an apparatus for measuring a DC potential of a member propagating or receiving a high frequency from a high frequency power supply. BACKGROUND OF THE INVENTION

[0002] Generally, in a parallel plate type plasma processing apparatus, a negative DC potential Vdc is generated in an electrode or a high frequency electrode to which a high frequency (RF) for generating a plasma is applied. From this, in a parallel plate type plasma etching apparatus, a high frequency is conventionally applied to a lower electrode or a susceptor on which a substrate to be processed is mounted, in order for ions in a plasma to be vertically drawn onto a surface of the substrate with the force of an electric field by a negative DC potential Vdc on the surface of the susceptor, thereby performing anisotropic etching or reactive ion etching (RIE). Further, such a DC potential Vdc...

Examples

embodiment 1

A. Embodiment 1

[0081] An electrical joint member was obtained by forming the surface metal layer made of aluminum having a thickness of 100 μm on the surface of the spiral formed by using a strip-shaped body made of stainless steel having a thickness of 80 μm and a width of 2 mm. This electrical joint member is referred to as an embodiment 1.

embodiment 2

B. Embodiment 2

[0082] An electrical joint member was obtained identically with the preferred embodiment 1 except employing a BeCu spiral instead of the spiral made of stainless steel as the elastic body. This electrical joint member is referred to as an embodiment 2.

embodiment 3

C. Embodiment 3

[0083] Only 1 cm was cut from a ring body made of resin called an O-ring generally used as a vacuum sealing material. This was employed as the elastic body and the outer surface thereof was coated with an aluminum foil, thereby making an electrical joint member. This is referred to as an embodiment 3.