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This invention discloses a 5052 aluminum alloy cavity for semiconductor devices and its preparation method, relating to the field of aluminum alloy material technology. Specifically, it includes the following steps: S1: First, the 5052 aluminum alloy ingot undergoes a two-stage homogenization treatment, followed by a three-stage free forging process, and finally, spray cooling and air drying to obtain a shaped cavity substrate; S2: After plasma cleaning, the shaped cavity substrate is subjected to magnetron sputtering technology to sequentially deposit a transition layer, a barrier layer, and a functional layer on its inner surface to obtain the 5052 aluminum alloy cavity for semiconductor devices. The 5052 aluminum alloy cavity prepared by this invention can greatly ensure the stability and purity of the prepared aerospace semiconductors, meeting the manufacturing needs of high-performance chips for aerospace applications, and is of great significance.