The invention relates to a
gallium nitride transistor based on a
polycrystalline silicon field plate and a preparation method thereof, and belongs to the technical field of
semiconductor devices. The
transistor comprises a substrate, a GaN buffer layer, a GaN channel layer, an AlN
insertion layer and an AlGaN
barrier layer which are sequentially arranged from bottom to top, a P-GaN cap layer and a first
passivation layer are arranged on the upper side of the AlGaN
barrier layer, a gate
metal field plate is arranged on the upper side of the P-GaN cap layer, a second
passivation layer is arranged on the upper sides of the gate
metal field plate and the first
passivation layer, and the second passivation layer is arranged on the upper side of the second passivation layer. Two sides of the GaN buffer layer are respectively provided with source
electrode metal and drain
electrode metal, the first passivation layer and the second passivation layer are provided with grooves, the bottoms of the grooves penetrate through the AlGaN
barrier layer, and
polycrystalline silicon field plates are arranged on the upper side of the source
electrode metal, the upper side of the second passivation layer and in the grooves. By introducing the
polycrystalline silicon field plate, interface charges are inhibited, and the
electrical performance of the device is remarkably improved.