1results about How to "Strong coupling ability" patented technology

A spin-orbit moment magnetic random access memory (MORAM) and method for controlling an artificial antiferromagnetic free layer with ferroelectric metal are disclosed. The MORAM comprises multiple memory cells, with the free magnetic layer being an artificial antiferromagnetic structure comprising a first magnetic layer, a non-magnetically coupled layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetically coupled layer. The ferroelectric metal layer simultaneously possesses ferroelectric polarization characteristics and a spin-orbit coupling effect, generating a spin-orbit moment when an in-plane current is applied to drive the magnetic moment reversal of the free magnetic layer. Simultaneously, the magnetic coupling state of the artificial antiferromagnetic structure is controlled by the ferroelectric polarization electric field. The simultaneous presence of ferroelectric polarization and spin-orbit coupling characteristics in the ferroelectric metal layer enables both ferroelectric control and spin-orbit moment writing functions, thereby simplifying the device structure, reducing the write current density required for magnetic moment reversal, and lowering device power consumption.