Collocation method of flash memory

A configuration method and memory technology, applied in the direction of response error generation, redundant code for error detection, etc., can solve the problems of limited extra space, good data error correction ability, and user inconvenience

Active Publication Date: 2010-03-03
MAXIO TECH HANGZHOU LTD
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when a known NAND gate flash memory uses the Reed-Solomon error correction code algorithm and the BCH error correction code algorithm, its data error correction capability is limited by the preset extra space size
In other words, the reason why the Reed-S...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Collocation method of flash memory
  • Collocation method of flash memory
  • Collocation method of flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] Certain terms are used in the specification and claims that follow the application to refer to particular elements. It should be understood by those skilled in the art that hardware manufacturers may use different terms to refer to the same element. This description and the subsequent claims do not use the difference in name as the way to distinguish components, but use the difference in function of the components as the criterion for distinguishing. The "comprising" mentioned in the entire specification and the subsequent claims is an open term, so it should be interpreted as "including but not limited to". In addition, the term "coupled" here includes any direct and indirect electrical connection means, therefore, if it is described in the text that a first device is coupled to a second device, it means that the first device can be directly electrically connected to the The second device, or indirectly electrically connected to the second device through other devices...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a collocation method of a flash memory, which comprises the following steps: adjusting a preliminary data storage capacity corresponding to the flash memory to determine an actual data storage capacity; adjusting a preliminary extra space capacity corresponding to the flash memory to determine an actual extra space capacity, wherein the total sum of the preliminary data storage capacity and the preliminary extra space capacity is equal to the total sum of the actual data storage capacity and the actual extra space capacity; and collocating the actual data storage capacity and the actual extra space capacity in the flash memory, wherein the actual data storage capacity is used for storing data, and the actual extra space capacity is used for storing an operation codethat is generated when the error-correcting code operation of the data is carried out by adopting an error-correcting code algorithm.

Description

technical field [0001] The invention relates to a capacity configuration method of a flash memory, especially a capacity configuration method for prolonging the service life of a Nand flash memory. Background technique [0002] In portable electronic products or embedded systems, non-volatile NAND flash memory (Nandflash memory) is one of the most commonly used storage devices at present. For example, personal digital assistants (PDAs), mobile phones, digital cameras, MP3 players and recording pens are all equipped with NAND flash memory. However, since the correctness of the data stored in the NAND flash memory will decrease with the increase of its access times, in order to solve the problem of data errors, the existing NAND flash memory will be matched with Appropriate Error Correction Code (ErrorCodes Correction, ECC) configuration is used to repair the erroneous data. For example, in a NAND flash memory with a data page size of 2K, an extra space (Spare area) of 64 by...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F11/10
Inventor 袁国华庄贺杰陈肇男
Owner MAXIO TECH HANGZHOU LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap