Nanosecond reversible phase transformation material and method for measuring phase transformation mechanism of same

Abstract

The invention discloses a nanosecond reversible phase transformation material and method for measuring a phase transformation mechanism of the same. The nanosecond reversible phase transformation material has the property of generating nanosecond reversible transformation under the single action of multiple external factors or combined action of the multiple external factors. The multiple external factors include electric field, pressure and temperature; the nanosecond reversible transformation is reversible change between order distribution and disorder distribution of atoms, atom groups or molecules inside the nanosecond reversible phase transformation material so that the nanosecond reversible phase transformation material macroscopically presents a phase transformation process generated between a crystalline state and an amorphous state, the time spent by the phase transformation process is within 0.1-1000 nanoseconds, wherein the crystalline state of the material is of a lattice structure of a cubic system; meanwhile, the material has a stable high-temperature solid phase, a stoichiometric ratio of electric neutrality, p orbit ionization degree of 0.02<r sigma'<0.31 and s-p orbit hybridization degree of 1.6<rpi-1<2.5. The invention also provides a method for measuring the phase transformation mechanism by adopting experiment means, which can be applied to the explanation of the phase transformation mechanism of the material and prediction of the phase transformation property of the material and design of a novel phase transformation material.

Description

technical field [0001] The invention relates to a phase-change material and its measurement method and experimental means, in particular to a nanosecond-level reversible phase-change material and a measurement method of its phase-change mechanism, belonging to the field of microelectronics nanomaterials and nonvolatile memory. Background technique [0002] Phase Change Memory (PCM), as the most potential next-generation non-volatile memory, has increasingly become a research hotspot in the past ten years (Tech. Dig.-Int. Electron Devices Meet. 2001, 803). The core of the phase change memory is the phase change material. The main characteristics that the phase change material must have include: high-speed phase change at the nanosecond level, long-term high-temperature stability in the amorphous state, and obvious resistance between the crystalline state and the amorphous state. difference, with repeated over 10 6 Subcycle switching capacity (Nat. Mater., 6, 824-832, 2007). ...

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Problems solved by technology

However, Jóvári (Phys. Rev. B 77, 035202, 2008) pointed out the errors in the model bonding process and result interpretation of the former two, and believed that amorphous Ge 2 Sb 2 Te 5 The material contains not only the main Ge-Te, Sb-Te bonds but also Ge-Te, Ge-Sb bonds, but Sb-Sb, Te-Te bonds are also not found