Integrated circuit and method of manufacturing integrated circuit

An integrated circuit and electric coupling technology, applied in the direction of circuit, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as power loss

Active Publication Date: 2015-05-06
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the rectification, power loss occurs

Method used

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  • Integrated circuit and method of manufacturing integrated circuit
  • Integrated circuit and method of manufacturing integrated circuit
  • Integrated circuit and method of manufacturing integrated circuit

Examples

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Embodiment Construction

[0014] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terms such as "top", "bottom", "front", "rear", "front", "rear", etc. are used with reference to orientations in the figures being described. Because components of embodiments of the present invention may be positioned in a number of different orientations, directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope defined by the claims.

[0015] The description of the examples is non-limiting. In particular, elements of the embodiments described below may be combined with elements of different embodiments.

[0016] The terms "wafer", "substrate" or "semico...

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Abstract

An integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other. A second conductive material in the first and the second diode device trenches is electrically coupled to a source terminal of the diode component. The first trenches, the first diode device trench and the second diode device trench are disposed in a first main surface of a semiconductor substrate. The integrated circuit further includes a diode gate contact including a connection structure between the first and the second diode device trenches. The connection structure is in contact with the second conductive material in the first and the second diode device trenches.

Description

Background technique [0001] In the field of vehicle applications and vehicle circuits, standard pn diodes are used to rectify the voltage generated by the generator. Due to this rectification, power loss occurs. The power loss is given by the product of the forward voltage and the average current generated by the generator. The alternator is one of the largest sources of power loss in a car due to the greatly increased need for electrical current. In order to reduce these losses, efficient diodes, so-called high-efficiency diodes, are being sought. One possibility to reduce power loss is by reducing the forward voltage. [0002] A further requirement to be met by generator diodes is the breakdown voltage in the event of a load dump. In order to protect electrical components in a car, the diodes must dissipate the entire energy generated by the generator within a certain voltage window. Contents of the invention [0003] According to an embodiment, an integrated circuit ...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L27/02H01L21/77
CPCH01L29/407H01L29/41766H01L29/66734H01L29/7805H01L29/7813H01L29/1095H01L29/7802H01L29/7815
InventorB.武特
OwnerINFINEON TECH AUSTRIA AG