The lower electrode base of dry etching equipment and dry etching equipment

Abstract

The invention provides a lower electrode base platform of a dry etching device and the dry etching device. The lower electrode base platform comprises a base platform substrate, a plurality of support structures arranged on the base platform substrate, and a switching mechanism. The plurality of support structures are composed of a first support part and a second support part. In a first state, the support surface of the first support part is higher than the support surface of the second support part, and the support surface of the second support part is laminated below the support surface of the first support part. In a second state, the support surface of the second support part is higher than the support surface of the first support part, and the support surface of the first support part is laminated below the support surface of the second support part. The switching mechanism is used for controlling the switching of the first support part and the second support part between the first state and the second state. By means of the lower electrode base platform of the dry etching device, the poor impression phenomenon caused by the deposition of foreign matters on the support surfaces can be relieved. Meanwhile, the damage to substrate base plates is avoided.

Description

technical field [0001] The invention relates to the technical field of etching, in particular to a lower electrode base of dry etching equipment and dry etching equipment. Background technique [0002] In the field of display technology, the base substrate is usually etched through a dry etching process to produce corresponding patterns. Specifically, the base substrate to be etched is placed in dry etching equipment, and plasma discharge is used to remove the material to be etched on the base substrate for etching. [0003] The dry etching equipment in the prior art mainly includes: a reaction chamber, an upper electrode and a lower electrode located in the reaction chamber, and a base for placing a substrate on the lower electrode; The substrate is placed on the pedestal above the lower electrode, the plasma gas is introduced into the reaction chamber, the reaction chamber is sealed, a voltage is applied to the upper electrode and the lower electrode, and a potential diff...

AI Technical Summary

Problems solved by technology

As the usage time of the lower electrode increases, more and more by-products will be deposited on the surface floating point 20, which will lead to differences in the temperature of the surface floating point 20 at different positions, and the etching rate will exist due to the difference in temperature. Differences, there are differences in the etching effect, which leads to the occurrence of poor embossing (Embossing Mura)

[0005] At present, in order to solve the above problems, the adopted scheme is to reduce the contact area between the printing point and the substrate substrate as much as possible, for example, the head of the printing point for contacting the substrate substrate is made into a zigzag shape or a strand shape, etc. However, Although this can improve the above-mentioned poor printing, due to the high hardness of alumina ceramics, generally its hardness is higher than that of glass. If the contact area of ​​the base substrate is too small, the pressure on the base substrate will be too large, resulting in damage to the base substrate (Glass Broken)

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