A stress-assisted spin-transfer torque magnetoresistive random access memory and its preparation and use methods

A spin transfer torque, random access memory technology, applied in the fields of magnetic field controlled resistors, parts of electromagnetic equipment, and manufacturing/processing of electromagnetic devices, can solve problems such as large operating current, reduce operating current, and achieve large applications. Foreground effect

Active Publication Date: 2018-02-06
CETHIK GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the above disadvantages, the present invention aims to provide a stress-assisted spin-transfer torque magnetoresistive random access memory, in which an antiferroelectric dielectric layer is inserted between the free layer and the electrode of the spin-transfer torque magnetoresistive random access memory , which solves the problem of relatively large working current of STT-MRAM

Method used

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  • A stress-assisted spin-transfer torque magnetoresistive random access memory and its preparation and use methods
  • A stress-assisted spin-transfer torque magnetoresistive random access memory and its preparation and use methods
  • A stress-assisted spin-transfer torque magnetoresistive random access memory and its preparation and use methods

Examples

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Embodiment 1

[0038] Example 1: Such as figure 1 , figure 2 As shown, a stress-assisted spin transfer torque magnetoresistive random access memory includes a multi-layer memory cell, in which a reference layer 2 with a fixed magnetization direction is perpendicular to the film surface, and a free layer 4 with a reversible vertical magnetization direction. There is a barrier layer 3 between the reference layer 2 and the free layer 4, the dielectric layer 5 connected to the other side of the free layer 4, and the top electrode 6 connected to the other side of the dielectric layer 5, the reference The bottom electrode 1 connected to the other side of the layer 2 applies an electric field between the upper and lower electrodes to allow the spin transfer torque magnetoresistive random access memory to function.

[0039] Such as image 3 As shown, the order of the individual layers of the spin transfer torque magnetoresistive random access memory can be reversed, and its properties remain unchanged....

Embodiment 2

[0051] Embodiment 2: A stress-assisted spin transfer torque magnetoresistive random access memory, including multi-layer memory cells connected layer by layer, wherein a reference layer with a fixed magnetization direction is perpendicular to the film surface, and a vertical magnetization direction can be reversed The free layer, each layer of memory cell includes a top electrode, a dielectric layer, a free layer, a barrier layer, a reference layer, and a bottom electrode; the bottom electrode, reference layer, barrier layer, free layer, MgO, dielectric layer, The top electrodes are stacked and connected sequentially from bottom to top.

[0052] The free layer uses cobalt, iron and nickel, and the reference layer uses an alloy of cobalt, iron and nickel.

[0053] The barrier layer is a suitable insulating layer, including magnesium oxide, hafnium oxide, aluminum oxide and the like. The dielectric layer is made of anti-ferroelectric materials, and the anti-ferroelectric layer is ma...

Embodiment 3

[0056] Embodiment 3: A stress-assisted spin transfer torque magnetoresistive random access memory, including multi-layer memory cells connected layer by layer, wherein a reference layer with a fixed magnetization direction is perpendicular to the film surface, and a vertical magnetization direction can be reversed Free layer, each layer of memory cell includes top electrode, dielectric layer, free layer, barrier layer, reference layer, bottom electrode; bottom electrode, dielectric layer, free layer, barrier layer, reference layer, anti-iron The magnetic coupling layer, the fixed layer, and the top electrode are stacked and connected sequentially from bottom to top.

[0057] The magnetization direction of the reference layer can be fixed by coupling the antiferromagnetic coupling layer and the fixed layer.

[0058] The free layer adopts an alloy doped with non-magnetic elements. The reference layer adopts an alloy doped with non-magnetic elements. The fixed layer is an alloy dope...

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Abstract

The invention relates to a stress-assisted spin-transfer torque magneto-resistance random access memory and its preparation and use method. A dielectric layer is inserted between the free layer and the electrode of the spin-transfer torque magneto-resistance random access memory; The bottom electrode, reference layer, barrier layer, free layer, dielectric layer and top electrode are sequentially deposited on the silicon wafer that has been prepared for the front-end process to obtain a memory cell; the memory cell is stacked layer by layer to obtain a stress-assisted self- Rotation-transfer torque magnetoresistive random access memory; during the use of the memory, the dielectric layer changes from the antiferroelectric state to the ferroelectric state, and applying stress to the free layer reduces its perpendicular anisotropy, thereby reducing the need for memory write / erase current. The stress engineering of the present invention reduces the problem of large current during the flipping process of STT-MRAM, and the STT-MRAM prepared by the present invention has the advantages of small flipping current and can be used for STT-MRAM with low power consumption.

Description

Technical field [0001] The invention relates to the field of semiconductor storage preparation, in particular to a stress-assisted spin transfer torque magnetoresistive random access memory and preparation and use methods thereof. Background technique [0002] Resistive random access memory (RRAM), phase change random access memory (PRAM) and STT-MRAM and other back-end process memories are stored based on the resistance state change of the memory cell, which has the advantages of fast speed and non-volatility. The basic memory cell includes The top electrode, the resistive medium and the bottom electrode are three parts. The magnetic tunnel junction (MTJ) resistive switching dielectric unit for STT-MRAM includes a free layer, a pinned layer, and a barrier layer sandwiched in between. When the magnetization direction of the free layer is parallel / anti-parallel to the magnetization direction of the pinned layer, the resistance state of the MTJ is in a low / high state, correspondin...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L43/08H01L43/02H01L43/12
CPCH10N50/80H10N50/01H10N50/10
Inventor左正笏李辉辉徐庶蒋信韩谷昌刘瑞盛孟皓刘波
OwnerCETHIK GRP