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Stress-assisted spin-transfer torque magnetic random access memory, preparation method thereof, and usage method thereof

A technology of spin transfer torque and random access memory, which is applied in the fields of magnetic field-controlled resistors, parts of electromagnetic equipment, and manufacturing/processing of electromagnetic devices. foreground effect

Active Publication Date: 2016-03-02
CETHIK GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the above disadvantages, the present invention aims to provide a stress-assisted spin-transfer torque magnetoresistive random access memory, in which an antiferroelectric dielectric layer is inserted between the free layer and the electrode of the spin-transfer torque magnetoresistive random access memory , which solves the problem of relatively large working current of STT-MRAM

Method used

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  • Stress-assisted spin-transfer torque magnetic random access memory, preparation method thereof, and usage method thereof
  • Stress-assisted spin-transfer torque magnetic random access memory, preparation method thereof, and usage method thereof
  • Stress-assisted spin-transfer torque magnetic random access memory, preparation method thereof, and usage method thereof

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Embodiment 1

[0038] Embodiment 1: as figure 1 , figure 2 As shown, a stress-assisted spin-transfer torque magneto-resistive random access memory, including a multilayer memory unit, wherein a reference layer 2 with a fixed magnetization direction is perpendicular to the film surface, and a free layer 4 with a reversible perpendicular magnetization direction is provided. There is a barrier layer 3 between the reference layer 2 and the free layer 4, a dielectric layer 5 connected to the other side of the free layer 4, a top electrode 6 connected to the other side of the dielectric layer 5, and a reference The other side of the layer 2 is connected to the bottom electrode 1, and an electric field is applied between the upper and lower electrodes to make the spin transfer torque magnetoresistive random access memory realize its function.

[0039] Such as image 3 As shown, the order of the individual layers of the spin-transfer torque MRRAM can be reversed without changing its properties. ...

Embodiment 2

[0051]Embodiment 2: A stress-assisted spin-transfer torque magneto-resistive random access memory, including a multi-layer memory unit, the memory unit is connected layer by layer, wherein the reference layer with a fixed magnetization direction is perpendicular to the film surface, and has a reversible vertical magnetization direction free layer, each layer of memory cells includes a top electrode, a dielectric layer, a free layer, a barrier layer, a reference layer, a bottom electrode; a bottom electrode, a reference layer, a barrier layer, a free layer, MgO, a dielectric layer, The top electrodes are sequentially stacked and connected from bottom to top.

[0052] The free layer uses cobalt, iron and nickel, and the reference layer uses an alloy of cobalt, iron and nickel.

[0053] The barrier layer is a suitable insulating layer, including magnesium oxide, hafnium oxide, aluminum oxide and the like. The dielectric layer is made of antiferroelectric material, and the antife...

Embodiment 3

[0056] Embodiment 3: A stress-assisted spin-transfer torque magneto-resistive random access memory, including a multi-layer memory unit, the memory unit is connected layer by layer, wherein the reference layer with a fixed magnetization direction is perpendicular to the film surface, and has a reversible vertical magnetization direction free layer, each layer of memory cells includes top electrode, dielectric layer, free layer, barrier layer, reference layer, bottom electrode; bottom electrode, dielectric layer, free layer, barrier layer, reference layer, antiferro The magnetic coupling layer, the fixed layer, and the top electrode are sequentially stacked and connected from bottom to top.

[0057] The magnetization direction of the reference layer can be fixed through the coupling between the antiferromagnetic coupling layer and the pinned layer.

[0058] The free layer is made of alloy doped with non-magnetic elements. The reference layer is made of alloy doped with non-mag...

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Abstract

The present invention relates to a stress-assisted spin-transfer torque magnetic random access memory (STT-MRAM), a preparation method thereof, and a usage method thereof. A dielectric layer is inserted between the free layer and the electrode of the spin-transfer torque magnetic random access memory; a bottom electrode, a reference layer, a barrier layer, the free layer, the dielectric layer and a top electrode only need to be deposited in turn on a silicon wafer which has prepared the front-end technology during preparation, and storage units are obtained; and the storage units are stacked together to obtain the stress-assisted spin-transfer torque magnetic random access memory. In the usage process of the memory, the dielectric layer is converted from an anti-ferroelectric state to a ferroelectric state, and the stress is applied to the free layer to reduce the perpendicular magnetic anisotropy so that the current required by writing / wiping of the memory is reduced. Through the stress engineering of the invention, the problem of a large current in the overturn process of an STT-MRAM is solved; and moreover, the STT-MRAM prepared by the invention has small overturn current and the like, and is applicable to an STT-MRAM with low power consumption.

Description

technical field [0001] The invention relates to the field of semiconductor storage preparation, in particular to a stress-assisted spin-transfer torque magnetoresistance random access memory and its preparation and use methods. Background technique [0002] Resistive random access memory (RRAM), phase change random access memory (PRAM) and STT-MRAM and other back-end process memories are stored based on the change of the resistance state of the storage unit, which has the advantages of fast speed and non-volatility. The basic storage unit includes There are three parts: top electrode, resistive medium and bottom electrode. The magnetic tunnel junction (MTJ) resistive dielectric unit used in STT-MRAM includes a free layer, a pinned layer and a sandwiched barrier layer. When the magnetization direction of the free layer is parallel / antiparallel to the magnetization direction of the pinned layer, the resistance state of the MTJ is in the low / high state, corresponding to stored...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/02H01L43/12
CPCH10N50/80H10N50/01H10N50/10
Inventor 左正笏李辉辉徐庶蒋信韩谷昌刘瑞盛孟皓刘波
Owner CETHIK GRP
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