Method of forming deep trench and deep trench isolation structure

A deep trench isolation, deep trench technology, applied in the direction of semiconductor/solid-state device components, electrical components, circuits, etc., can solve problems such as being unsuitable for separating semiconductor chips

Active Publication Date: 2017-04-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Unfortunately, scribe lines with larger widths are not suitable for separating semiconductor chips with smaller dimensions

Method used

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  • Method of forming deep trench and deep trench isolation structure
  • Method of forming deep trench and deep trench isolation structure
  • Method of forming deep trench and deep trench isolation structure

Examples

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Embodiment Construction

[0013] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are merely examples and are not intended to limit the invention. For example, in the following description, the formation of the first component on or on the second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include that additional components may be formed on Between the first and second parts, such that the first part and the second part may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in each embodiment. This repetition is for brevity and clarity only and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0014] Mo...

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Abstract

A method of forming a deep trench in a semiconductor substrate includes: forming a first mask pattern over the semiconductor substrate, in which the first mask pattern has a first opening exposing a portion of the semiconductor substrate; forming a second mask pattern over the first mask pattern, in which the second mask pattern has a second opening substantially aligned with the first opening to expose the portion of the semiconductor substrate, and the second opening has a width greater than a width of the first opening to further expose a portion of the first mask pattern; and removing the portion of the semiconductor substrate, the portion of first mask pattern and another portion of the semiconductor substrate beneath the portion of the first mask pattern to form the deep trench. The embodiment also relates to the method of forming the deep trench and a deep trench isolation structure.

Description

technical field [0001] Embodiments of the present invention relate to a method for forming a deep trench and a deep trench isolation structure. Background technique [0002] In the past, the semiconductor industry has used various methods and equipment to separate individual semiconductor chips from the semiconductor wafers on which the chips are fabricated. Typically, a technique called scribing or dicing is used to partially or fully cut through the wafer with a diamond cut-off wheel along scribe lines formed on the wafer between individual chips. [0003] Unfortunately, scribe lines with larger widths are not suitable for separating semiconductor chips with smaller dimensions. Continuous improvements are sought for separating semiconductor chips with smaller dimensions. Contents of the invention [0004] According to some embodiments of the present invention, there is provided a method of forming a deep trench in a semiconductor substrate, the method comprising: formi...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L21/82
CPCH01L21/82H01L21/78H01L21/3083H01L21/764H01L23/544H01L21/3085H01L21/3081H01L21/30604H01L21/762
Inventor郭富强陈盈薰郭仕奇李宗宪
OwnerTAIWAN SEMICON MFG CO LTD