Heat treatment making technology

Abstract

A preferable embodiment of the invention discloses a heat treatment making technology. The technology comprises the following steps of firstly providing a semiconductor substrate to be heated; and heating the semiconductor substrate by using at least two first heating light beams and second heating light beams with different energy densities at the same time. Therefore, a trouble of needing to switch different machines during an existing heat treatment making technology can be eliminated, a making technology period is shortened, and a problem of producing a patterned phenomenon due to the heating of a front surface of the semiconductor substrate can be improved.

Description

technical field [0001] The invention relates to a heat treatment manufacturing process, in particular to a manufacturing process for simultaneously heating a semiconductor substrate by using at least two heating beams with different energy densities. Background technique [0002] As semiconductor manufacturing technology becomes more and more sophisticated, integrated circuits have undergone major changes, which has led to a rapid increase in computing performance and storage capacity of computers, and has driven the rapid development of peripheral industries. The semiconductor industry is also developing at the speed of doubling the number of transistors on integrated circuits every 18 months, as predicted by Moore's Law. 90 nanometers (nm) in 2005, entered 65 nanometers in 2005, and moved towards 45 nanometers. Therefore, along with the advancement of semiconductor manufacturing technology and the miniaturization of microelectronic components, the density of semiconductor...

AI Technical Summary

Problems solved by technology

[0004] Therefore the object of the present invention is to provide a kind of method that a semiconductor substrate to be heated is carried out heat treatment, to solve the accompanying problem of above-mentioned existing thermal fabrication process

Therefore, the present invention can not only save the trouble of switching different machines during the heat treatment process and shorten the process cycle, but also improve the problem of patterning caused by heating only the front side of the semiconductor substrate.