Thermal treatment production process

Abstract

The preferred embodiment of the invention discloses a thermal treatment production process, which comprises the steps of firstly providing a semiconductor substrate to be heated, and then heating thesemiconductor substrate by using at least a first heating light beam and a second heating light beam which are different in energy density. Therefore, the thermal treatment production process not onlycan save the trouble of switching different machines when the thermal treatment production process is performed and shorten the period of the production process, but also can improve a problem of a patterning phenomenon generated by only heating the front of the semiconductor substrate.

Description

technical field [0001] The invention relates to a heat treatment manufacturing process, in particular to a manufacturing process for simultaneously heating a semiconductor substrate by using at least two heating beams with different energy densities. Background technique [0002] As semiconductor manufacturing technology becomes more and more sophisticated, integrated circuits have undergone major changes, which has led to a rapid increase in computing performance and storage capacity of computers, and has driven the rapid development of peripheral industries. The semiconductor industry is also developing at the speed of doubling the number of transistors on integrated circuits every 18 months, as predicted by Moore's Law. 90 nanometers (nm) in 2005, entered 65 nanometers in 2005, and moved towards 45 nanometers. Therefore, along with the advancement of semiconductor manufacturing technology and the miniaturization of microelectronic components, the density of semiconductor...

AI Technical Summary

Problems solved by technology

[0004] Therefore the object of the present invention is to provide a kind of method that a semiconductor substrate to be heated is carried out heat treatment, to solve the accompanying problem of above-mentioned existing thermal fabrication process

Therefore, the present invention can not only save the trouble of switching different machines during the heat treatment process and shorten the process cycle, but also improve the problem of patterning caused by heating only the front side of the semiconductor substrate.