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A column-level adc for cmos image sensor and its realization method

A technology of image sensor and implementation method, which is applied in the direction of image communication, color TV parts, TV system parts, etc., can solve the problem of low conversion accuracy of column-level single-slope ADC, and improve the overall performance and increase the gain , The effect of reducing power consumption

Active Publication Date: 2022-02-11
XIAN MICROELECTRONICS TECH INST
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Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcomings of the low conversion accuracy of the existing column-level single-slope ADC, and provide a column-level ADC for CMOS image sensors and its implementation method

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  • A column-level adc for cmos image sensor and its realization method
  • A column-level adc for cmos image sensor and its realization method
  • A column-level adc for cmos image sensor and its realization method

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Embodiment Construction

[0044] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0045] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate ...

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Abstract

The invention discloses a column-level ADC for a CMOS image sensor and a realization method thereof, and belongs to the field of analog-to-digital converters of a CMOS image sensor. In the column-level ADC of the present invention, the input of the negative terminal of the first stage of the comparator is a photoelectric signal Vin, and the input of its positive terminal is a slope reference signal, the output terminal of the first stage of the comparator is connected with the input terminal of the second stage of the comparator, and the comparator The output terminal of the second stage is connected to the positive terminal of the first stage of the comparator through the compensation capacitor, and the output terminal of the second stage of the comparator also provides an external output; the reversal direction of the first stage of the comparator and the second stage of the comparator are opposite . The invention can effectively suppress the distortion of the slope signal and improve the conversion precision.

Description

technical field [0001] The invention belongs to the field of analog-to-digital converters of CMOS image sensors, in particular to a column-level ADC for CMOS image sensors and its realization method. Background technique [0002] CMOS image sensors are widely used in military and civilian fields. The digital output CMOS image sensor is convenient for subsequent data processing, and has become the mainstream direction of today's CMOS image sensor. The ADC integration technology of CMOS image sensor mainly includes: pixel integrated ADC technology, column integrated ADC technology and chip integrated ADC technology. Such as figure 2 As shown in (a), the pixel integrated ADC technology is characterized by using a low-speed ADC converter for each photodetector, and a large number of low-speed ADC converters work in parallel to achieve the effect of a high-speed ADC converter. Such as figure 2 As shown in (b), column integration is the function that each ADC converter only co...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H04N5/3745
CPCH04N25/76H04N25/772
Inventor 李婷何杰时光吴龙胜
Owner XIAN MICROELECTRONICS TECH INST
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