Memory, data writing method and memory system

A memory and data technology, applied in the storage field, can solve problems such as insufficient blocks and affecting writing speed

Active Publication Date: 2021-07-30
合肥康芯威存储技术有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Garbage collection needs to be performed at the same time as the flash memory is written. If the garbage collection operation is performed all the time, the writing speed will be affected. If the garbage collection operation is performed after a long time, the blocks will not be enough.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory, data writing method and memory system
  • Memory, data writing method and memory system
  • Memory, data writing method and memory system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0057] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual impleme...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a memory, a data writing method and a memory system, wherein the memory comprises a memory array, a control unit and a garbage recycling unit; the memory array comprises a plurality of memory blocks; the control unit is used for obtaining the garbage collection intensity and the page number of single-time continuous write-in data; the garbage recycling unit is used for carrying out a garbage recycling step on the memory array; the garbage memory intensity is equal to the ratio of the total data volume moved when one memory block is released to the total data volume when one memory block is fully written; and the page number of the single-time continuous write-in data is inversely proportional to the garbage recycling intensity. The memory provided by the invention can improve the overall write-in performance.

Description

technical field [0001] The invention relates to the technical field of storage, in particular to a storage, a data writing method and a storage system. Background technique [0002] As a non-volatile storage device, NAND Flash has excellent characteristics such as small size, fast access speed, low power and shock resistance. Therefore, Solid State Drives (SSD) based on NAND Flash technology have fast read and write speeds, Low power consumption, no noise, anti-vibration, low heat, small size, large working range, widely used in military, vehicle, industrial control, video surveillance, network monitoring, network terminals, electric power, medical, aviation, etc., navigation equipment and other fields. [0003] Flash memory is a device that is erased in units of blocks and read and written in units of pages. Repeated read and write operations in the flash memory will result in invalid data and valid data mixed in the same block in each block. In order to reuse the block, g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
CPCG06F12/0246G06F2212/1024G06F2212/1052G06F2212/7205G06F2212/1044Y02D10/00
Inventor 朱钦床苏忠益
Owner 合肥康芯威存储技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products