Forming method of capacitor opening hole and forming method of memory capacitor

A technology for opening holes and memory, which can be used in capacitors, electric solid devices, circuits, etc., and can solve the problems of insufficient size and precision of capacitor opening holes.

Active Publication Date: 2021-11-16
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a method for forming a capacitor opening hole and a method for form

Method used

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  • Forming method of capacitor opening hole and forming method of memory capacitor
  • Forming method of capacitor opening hole and forming method of memory capacitor
  • Forming method of capacitor opening hole and forming method of memory capacitor

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Embodiment Construction

[0056] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the application are given in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0057]Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.

[0058] It should be understood that when an element or layer is referred to as being "on," "adjacent," "co...

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Abstract

The invention relates to a forming method of a capacitor opening hole and a forming method of a memory capacitor. The forming method of the capacitor opening hole comprises the steps of providing a substrate, forming a sacrificial layer and a supporting layer which are stacked on the surface of the substrate, and forming a plurality of hollow first side wall structures which are arranged at intervals on the surface of the supporting layer; forming a second material layer on the surface of the first side wall structure to form a second side wall structure; and etching the sacrificial layer and the supporting layer by taking the first side wall structure and the second side wall structure as masks so as to form the capacitor opening hole. Through the steps, the first side wall structure and the second side wall structure which are tightly arranged can be formed, the capacitor opening hole is further formed, based on the forming method of the tightly-arranged double-side-wall structure, the communication effect of the capacitor opening hole can be achieved, the capacitor opening hole with a smaller size can be prepared, and then the preparation precision of the capacitor opening hole is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming capacitor opening holes and a method for forming storage capacitors. Background technique [0002] The continuous development of science and technology has made people have higher and higher requirements for semiconductor technology, and the area of ​​semiconductor devices has been continuously reduced. Therefore, higher requirements have been put forward for the precision and accuracy of semiconductor manufacturing processes. Semiconductor memory is a kind of memory accessed by semiconductor circuits, among which Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is widely used in various fields due to its fast storage speed and high integration. [0003] When forming the memory capacitor of DRAM, it is necessary to form a sacrificial layer on the surface of the substrate as the supporting structure of the capacitor hole. After forming an electro...

Claims

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Application Information

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IPC IPC(8): H01L49/02H01L21/8242H01L27/108
CPCH01L28/40H10B12/03H10N97/00H10B12/00Y02D10/00
Inventor 刘志拯
Owner CHANGXIN MEMORY TECH INC
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