Charge amount measurement method, shift value measurement method of charged beam, charge amount measuring device and shift value measuring device of charged beam

a technology of charge amount and charge amount, which is applied in the direction of material analysis by measuring secondary emission, instruments, nuclear engineering, etc., can solve the problems of .phi.2 mm probe resolution, inability to apply typical insulation materials, and inability to meet the function of electric apparatus

Inactive Publication Date: 2003-01-30
KK TOSHIBA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the solid insulator is charged, the surrounding electric field changes and there is also a risk that the function of an electric apparatus will not be fulfilled.
Therefore, the method of (1) has a problem that a probe (resolution) of approximately .phi.2 mm is minimum in the practical level.
Furthermore, the method of (2) also has a problem that a probe of approximately several mm is minimum in the research level for a similar reason and the resolution is kept to approximately half of the probe size.
Furthermore, in a technique of forming a measuring surface on the surface of the Pockels crystal, there is a possibility that the resolution of up to a wavelength order will be obtained, but there is a problem that the technique cannot be applied to typical insulation materials because the measuring subject is Pockels crystal itself.
However, there is a drawback that the charged state of the sample is changed by scanning the sample with the electron beam and there is a problem as regards the measurement precision.

Method used

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  • Charge amount measurement method, shift value measurement method of charged beam, charge amount measuring device and shift value measuring device of charged beam
  • Charge amount measurement method, shift value measurement method of charged beam, charge amount measuring device and shift value measuring device of charged beam
  • Charge amount measurement method, shift value measurement method of charged beam, charge amount measuring device and shift value measuring device of charged beam

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first embodiment

[0034] (First Embodiment)

[0035] Hereafter, embodiments of the present invention will be described referring to the drawings.

[0036] FIG. 1 is a configuration diagram of a charge amount measuring device 1 according to the present invention. The measuring device 1 has two optical systems having optical axes that cross at substantially right angles. Each of the two optical systems includes an electron gun and a camera device. For convenience, a direction (a vertical direction on paper) parallel to a first optical system is defined as a Z axis, and a direction (a horizontal direction on paper) parallel to a second optical system is defined as a Y axis. A direction perpendicular to the Y axis and the Z axis is defined as an X axis.

[0037] Hereafter, components will be described.

[0038] A chamber 2 is connected to exhaust means (not illustrated), such as a turbo molecular pump and a rotary pump, and the inside thereof can be exhausted. A first electron gun 6a, a first view-port 4a to be disp...

second embodiment

[0065] (Second Embodiment)

[0066] [Second Observation System]

[0067] When measuring the charge amount C on the surface of the solid insulator IS in the first embodiment, the charge amount is measured by presuming the distribution curve of the charge amount as:

C=K(a0+a1.times.Z+a2.times.Z.sup.2+ . . . )

[0068] (where ai is a constant).

[0069] In some cases, however, the shape of the solid insulator IS is special and it is difficult to presume the charge distribution curve. Furthermore, it is also conceivable that the charge distribution curve in the case of a large scale differs from that in the case of several mm or less as in the present embodiment even if the shapes are similar.

[0070] In such a case, the charge distribution curve of the solid insulator IS in the Z axis direction can be measured by using a second observation system, i.e., a measurement system in which the electron beam travels substantially in parallel with the electrode surface (in the Y axis direction).

[0071] At the ...

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Abstract

A charge amount measurement method comprises: interposing a measurement subject between a first substance and a second substance having a through hole; measuring a first collision position where a charged beam passed through the through hole and vicinity of the measurement subject collides against the first substance, in a state that there is no potential difference between the first substance and the second substance, measuring a second collision position where a charged beam passed through the through hole and vicinity of the measurement subject collides against the first substance, in a state that there is a potential difference between the first substance and the second substance, and measuring a charge amount of the measurement subject based on a difference between the measured first collision position and the measured second collision position.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001] This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2001-222439, filed Jul. 24, 2001, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002] 1. Field of the Invention[0003] The present invention relates to a charge amount measuring method, a shift value measuring method of charged beam, a charge amount measuring device, and a shift value measuring device of charged beam.[0004] 2. Description of the Related Art[0005] As supports of charged conductors in electric apparatuses and discharge application apparatuses, solid insulator is widely used. Since interface discharge occurs at interfaces between the solid insulator and surrounding liquid and gas, however, the surface of the solid insulator might be charged. If the solid insulator is charged, the surrounding electric field changes and there is also a risk that the function of an elec...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): G01N23/22G01R29/24H01J37/244H01J37/28
CPCG01R29/24
InventorHAYASHI, MASAKAZU
OwnerKK TOSHIBA