Mask set for measuring an overlapping error and method of measuring an overlapping error using the same
Inactive Publication Date: 2005-08-04
HANGER SOLUTIONS LLC
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- Abstract
- Description
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- Application Information
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Benefits of technology
[0007] It is an object of the present invention to provide a mask set for measuring an overlapping error which can identify an overlapping error generated not only in the X-axis and Y-axis directions but also in all directions during the photolithography developing process and also can easily determine an overlapping error even using a microscope having a low magnifying power.
Problems solved by technology
However, in case that an overlapping error created in both directions is measured, a measure operation are performed twice by this pattern.
In addition, when a microscope having a high magnifying power is used and the patterns become more fined, a measuring error occurs frequently due to aberration of a lens and difference of a measuring point (eye) and a determining point of the measuring scale.
Accordingly, although dedicated measurement equipments has been developed, there are problems that they are expensive in cost and a processing time is delayed.
Method used
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Embodiment Construction
[0020]FIG. 2 is a plan view of a first mask for measuring an overlapping error according to the present invention.
[0021] A first mask 10 is consisted of a plurality of unit patterns 12 which are formed on a mask substrate 11. The plurality of unit patterns 12 are extended radially round a give center. Two unit patterns 12 which are adjacent from each other form an angle of 2θ1.
[0022]FIG. 3 is a plan view of a second mask for measuring an overlapping error according to the present invention.
[0023] A second mask 20 is consisted of a plurality of unit patterns 22 which are formed on a mask substrate 21. The plurality of unit patterns 22 are extended radially round a give center. Two unit patterns 22 which are adjacent from each other form an angle of 2θ1.
[0024] In the first or second masks 10 or 20, an angle of 2θ1 between the neighboring unit patterns 12 or 22 is in the range between 0° and 90° . The unit patterns 12 and 22 are a dark pattern made of materials such as chrome or a ...
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A mask set for measuring an overlapping error according to the invention comprises a first mask consisted of a mask substrate on which a plurality of unit patterns are formed: The plurality of unit patterns are arranged in radial shape round a given center. The mask set of the present invention further comprises a second mask consisted of a mask substrate on which a plurality of unit patterns are formed. The plurality of unit patterns of the second mask are arranged in same shape as the plurality of unit patterns of the first mask, whereby when the first and second masks are overlapped to each other, the unit pattern of the first mark and the neighboring unit pattern of the second mask maintains a certain angle.
Description
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a mask set for measuring an overlapping error and method of measuring an overlapping error using the same. In particular, the present invention relates to a mask set for measuring an overlapping error and method of measuring an overlapping error which can identify an degree of overlapping error generated in all directions during the photolithography developing process and also can easily determine whether an overlapping error occurs or not even using a microscope having a low magnifying power. [0003] 2. Description of the Prior Art [0004] As the integration of the semiconductor device becomes higher and smaller, the degree of overlapping alignment between an underlying layer and an upper layer or between an underlying layer and an impurity diffusion layer becomes an important factor in reliability of the device. Accordingly, a mask, on which a mark for measuring an overlapping error ...
Claims
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Patent Timeline
Login to View More IPC IPC(8): G03F9/00H01L21/027G06F17/50H01L21/00H01L23/544
CPCG03F9/00H01L2223/54453H01L23/544H01L2924/0002H01L2924/00H01L21/027
InventorPARK, KI YEOP
OwnerHANGER SOLUTIONS LLC