Semiconductor device

a technology of semiconductor devices and semiconductors, applied in semiconductor devices, capacitors, electrical apparatus, etc., can solve the problems of reducing manufacturing yield, increasing the number of processing steps,

Inactive Publication Date: 2010-05-20
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor device with a transistor and an interlayer insulating film that has a through hole to reach the transistor. The through hole is filled with a plug lower-electrode connected to the transistor, and a ferroelectric film is formed on the plug lower-electrode. An upper-electrode is then formed on the ferroelectric film. This structure allows for improved performance and reliability of the semiconductor device.

Problems solved by technology

However, because the two plugs are formed, i.e., two plug forming processes have been performed, plug misalignment occurs, and the number of processing steps is increased, thereby reducing the manufacturing yield or the like.

Method used

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Examples

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embodiment 1

[0018]A semiconductor device according to Embodiment 1 of the invention is described hereinafter with reference to FIGS. 1 to 3C. FIG. 1 illustrates a cross-sectional view of this semiconductor device. FIGS. 2A to 2C illustrate cross-sectional views of sequential steps in a method for manufacturing this semiconductor device, which focuses on a plug lower-electrode thereof. FIGS. 3A to 3C illustrate cross-sectional views of sequential steps in the method for manufacturing this semiconductor device continuing from the steps illustrated in FIGS. 2A to 2C. In the following description, the direction away from the principle surface of the semiconductor substrate is assumed to the upper or upward direction in each of the drawings.

[0019]As illustrated in FIG. 1, a semiconductor device 1 includes a semiconductor substrate 11, a switching transistor 14 formed on the semiconductor substrate 11, interlayer insulating films 19 and 20 formed to cover the transistor 14, and a ferroelectric capaci...

embodiment 2

[0043]A semiconductor device according to Embodiment 2 of the invention is described hereinafter with reference to FIG. 4. FIG. 4 illustrates a cross-sectional view of the semiconductor device according to Embodiment 2. The semiconductor device according to Embodiment 2 differs from the semiconductor device according to Embodiment 1 in that the burying metal left thicker so that an upper surface thereof corresponds to a bottom surface of the ferroelectric film. The same constituent elements as those of Embodiment 1 are designated with the same reference numeral. The description of such constituent elements is omitted.

[0044]As illustrated in FIG. 4, a semiconductor device 2 includes a burying metal plate 30 made of Ir. The burying metal plate 30 includes a burying portion blocking up the opening of the seam 27 and a plate-like portion extending under the bottom surface of the ferroelectric film 33. The thickness of the burying metal plate 30 is 50 nm or less. The configuration of the...

embodiment 3

[0050]A semiconductor device according to Embodiment 3 of the invention is described with reference to FIGS. 5 to 6C. FIG. 5 illustrates a cross-sectional view of the semiconductor device according to Embodiment 3. FIGS. 6A to 6C illustrate cross-sectional views of sequential steps in a method for manufacturing the semiconductor device according to Embodiment 3, focusing on formation of the plug lower-electrode. The semiconductor device according Embodiment 3 differs from the semiconductor device 1 according to Embodiment 1 in that a plug lower-electrode substantially does not contain a seam. The same constituent elements as those of Embodiment 1 and Embodiment 2 are designated with the same reference numeral. The description of such constituent elements is omitted.

[0051]As illustrated in FIG. 5, a plug lower-electrode 71 includes a relatively thick barrier metal 73 and a plug metal 75. The barrier metal 73 is made of Ti and TiAlN, and a thickness thereof is close to that of the bot...

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PUM

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Abstract

According to an aspect of the present invention, there is provided a semiconductor device, including: a semiconductor substrate; a transistor that is formed on the semiconductor substrate; an interlayer insulating film that is formed on the semiconductor substrate so as to cover the transistor and that has a through hole formed thereinside so as to reach the transistor; a plug lower-electrode that is formed in the through hole and that is connected to the transistor; a ferroelectric film that is formed on the plug lower-electrode; and an upper-electrode that is formed on the ferroelectric film.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority from Japanese Patent Application No. 2008-292026 filed on Nov. 14, 2008, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]An aspect of the present invention relates to a semiconductor device having a ferroelectric capacitor.[0004]2. Description of the Related Art[0005]There is known a semiconductor device (hereinafter referred to also as an FeRAM (ferroelectric random access memory)), which stores data using a ferroelectric capacitor in a nonvolatile manner. For example, the FeRAM has a so-called capacitor-on-plug (COP) structure including a switching transistor on a semiconductor substrate, a ferroelectric capacitor formed of a lower-electrode, a ferroelectric film and an upper-electrode and formed on a contact plug connected to the diffusion layer of the transistor, and a barrier film or the like provided to suppress the dif...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L27/108
CPCH01L28/55H01L27/11507H10B53/30
InventorKANAYA, HIROYUKI
OwnerKK TOSHIBA