Channel MOS P-N junction Schottky diode structure and manufacturing method thereof

A technology of Schottky diode and channel structure, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low forward voltage drop value, consumption of conductive area, etc.

CN101699616AActive Publication Date: 2010-04-28PFC DEVICE HLDG
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2010-04-28

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Abstract

The invention discloses a channel MOS P-N junction Schottky diode structure and a manufacturing method thereof. The structure mainly comprises a substrate, a channel structure, a polysilicon layer, an oxide layer, a metal layer and an ion implantation area; and the manufacturing method comprises the following steps: providing the substrate; forming a first mask layer on the substrate; performing a first photoetching process to form the channel structure; growing a gate oxide layer in the channel structure; performing an ion implantation process to form the ion implantation area; forming the polysilicon layer in the channel structure; forming a second mask layer on partial polysilicon layer and the first mask layer; performing a second photoetching process to form a side wall structure and expose the partial polysilicon layer and the substrate; and forming the metal layer on a generating structure. The channel MOS P-N junction Schottky diode structure has the characteristics of low reverse voltage leakage current, low forward voltage drop value, high reverse withstanding voltage value and low reverse recovery time.
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Description

technical field

[0001] The present invention relates to a kind of channel type Metal Oxide Semiconductor (MOS) P-N junction Schottky diode structure and its manufacturing method, especially relate to have lower leakage current, lower forward conduction voltage drop value (V F ), a higher reverse withstand voltage value, and a channel type metal oxide semiconductor P-N junction Schottky diode structure with low reverse recovery time characteristics. Background technique

[0002] Schottky diode is a unipolar element with electrons as carriers, and its characteristics are fast speed and forward conduction voltage drop value (V F ) is low, but the reverse bias leakage current is relatively large (related to the Schottky barrier value caused by the metal work function and semiconductor doping concentration). The P-N diode is a dual-carrier element that conducts a large amount of current. However, the forward conduction voltage drop of the component (V F ) is generally higher t...

Examples

Embodiment Construction

[0101] See figure 2 , which is a schematic diagram of a first preferred embodiment of a trenched metal-oxide-semiconductor P-N junction Schottky diode structure developed by the present invention to improve defects caused by known technical means. We can clearly see from the figure that the trench metal oxide semiconductor P-N junction Schottky diode structure 2 mainly includes a substrate 20, a channel structure 21, an ion implantation region 22, a polysilicon layer 23, an oxide Object layers 213, 210, 24 and metal layers 25, 26, wherein the substrate 20 is composed of a high doping concentration N-type silicon substrate (N+ silicon substrate) 201 and a low doping concentration N-type epitaxial layer (N- epitaxial layer) 202; the channel structure 21 is formed in the substrate 20 and the oxide layer 210, 213; the ion implantation region 22 is formed in the low doping concentration N-type epitaxial layer 202, and is formed in the channel The polysilicon layer 23 in the struc...