Lateral diffusion metal oxide semiconductor assembly

A technology of oxide semiconductors and metals, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing the lateral extension length of components, affecting switching power loss, and increasing the on-resistance of components, so as to reduce the surface electric field and improve the conductivity. On-resistance, the effect of reducing the reverse transfer capacitance

CN102299179BActive Publication Date: 2014-04-09SINOPOWER SEMICON
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2014-04-09

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Abstract

The invention discloses a lateral diffusion metal oxide semiconductor assembly. The lateral diffusion metal oxide semiconductor assembly comprises a substrate, a gate dielectric layer, a gate polycrystalline silicon layer, a source region, a drain region, a matrix region, a first drain contact plug, a source polycrystalline silicon layer, an insulating layer and a source metal layer, wherein the source polycrystalline silicon layer arranged on the gate dielectric layer above the drain region is utilized to be served as a field plate so as to advance the breakdown voltage and improve the capacitance between a drain electrode and a source electrode. Besides, the first drain contact plug in the invention can effectively reduce the extended length of an on-resistance and the lateral between the drain electrode and the source electrode, thus the power consumption can be reduced and the assembly integration can be increased.
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Description

technical field

[0001] The invention relates to a laterally diffused metal oxide semiconductor component, in particular to a laterally diffused metal oxide semiconductor component with improved capacitance characteristics and optimized on-resistance. Background technique

[0002] A laterally diffused metal-oxide-semiconductor (LDMOS) device is a common semiconductor power device. Since the laterally diffused metal oxide semiconductor device has a horizontal structure, it is easy to manufacture and easy to integrate with the current semiconductor technology, thereby reducing the manufacturing cost. At the same time, it can withstand high breakdown voltage and has high output power, so it is widely used in components such as power converters, power amplifiers, switches, and rectifiers.

[0003] see figure 1 . figure 1 A schematic cross-sectional view of a laterally diffused metal-oxide-semiconductor device in the prior art is shown. Such as figure 1 As shown, the conventi...

Examples

Embodiment Construction

[0035] Certain terms are used in the specification to refer to particular components. Those of ordinary skill in the art should understand that manufacturers may use different terms to refer to the same component. This manual does not use the difference in name as a way to distinguish components, but uses the difference in function of components as a basis for distinction. "Including" mentioned throughout the specification is an open term, so it should be interpreted as "including but not limited to". In addition, the term "electrically connected" includes any direct and indirect electrical connection means. Therefore, it is described that a first device is electrically connected to a second device, which means that the first device can be directly connected to the second device, or the first device can be indirectly connected to the second device through other devices or connection means. second device.

[0036] see figure 2 , figure 2 A schematic cross-sectional view ...