A Schottky semiconductor device with charge compensation trench and its preparation method
A charge compensation, conductive semiconductor technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as fast turn-on and turn-off, low forward turn-on voltage, and impact on reverse breakdown characteristics of devices. The effect of reducing forward conduction resistance, increasing impurity doping concentration, and improving forward conduction characteristics
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Publication Date
- 2017-08-08
Smart Images
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Abstract
Description
technical field
[0001] The invention relates to a Schottky semiconductor device with a charge compensation trench, and also relates to a preparation method of the Schottky semiconductor device with a partial charge compensation trench. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique
[0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments.
[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional ...
Examples
Embodiment 1
[0026] figure 1 It is a cross-sectional view of a Schottky semiconductor device with a charge compensation trench of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.
[0027] A Schottky semiconductor device with a charge compensation trench, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located in the first conductive semiconductor material 3, is a semiconductor silicon material of P conductivity type, and the doping concen...
Embodiment 2
[0040] Figure 6 It is a cross-sectional view of a Schottky semiconductor device with a charge compensation trench of the present invention, combined below Figure 6 The semiconductor device of the present invention will be described in detail.
[0041] A Schottky semiconductor device with a charge compensation trench, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; The first conductive semiconductor material 3, located in the second conductive semiconductor material 4, is a semiconductor silicon material of N conductivity type, and the doping concentr...