Memory programming method and system

Abstract

The invention discloses a memory programming method and system to solve the problems that larger memory areas are occupied, the costs of memories are increased and use of other devices in the memories is affected by increasing the quantities of capacitors and diodes in charge pumps. The method comprises the steps that after receiving a programming instruction, a memory determines a multi-byte memory cell which corresponds to the programming instruction and needs to undergo programming operation; the memory compares power supply voltage with a preset internal voltage threshold; if the internal voltage threshold is less than or equal to the power supply voltage, an internal charge pump is selected to provide programming voltage to carry out programming operation on the multi-byte memory cell; if the internal voltage threshold is more than the power supply voltage, an external power supply transfer board is selected to provide programming voltage to carry out programming operation on the multi-byte memory cell. The method has the advantages that the area of the memory can not be increased; the cost of the memory is lower; use of other devices in the memory can not be affected; the external power supply transfer board is more flexible to use.

Description

technical field

[0001] The invention relates to the field of memory technology, in particular to a memory programming method and a memory programming system. Background technique

[0002] Memory (Memory) is a memory device in a computer system used to store programs and data. The information in the computer, including the input raw data, computer programs, intermediate running results and final running results are all stored in the memory. With the memory, the computer has the memory function to ensure normal work.

[0003] When programming a memory, a higher programming voltage is usually required to meet the programming requirements, but the voltage strength provided by the power supply voltage of the general memory is low, which cannot meet the programming requirements of the memory. Therefore, a boost circuit is usually provided inside the memory to increase the voltage strength provided by the power supply voltage to the voltage required for programming the memory. T...

Examples

Embodiment 1

[0062] refer to figure 1 , which shows a flow chart of a memory programming method according to Embodiment 1 of the present invention, and the method may specifically include the following steps:

[0063] Step 101 , after receiving a programming instruction, the memory determines a multi-byte storage unit corresponding to the programming instruction that needs to be programmed.

[0064] In the embodiment of the present invention, the memory may include a plurality of storage units, and the programming and erasing operations on the memory refer to programming and erasing operations on the storage units inside the memory. Therefore, after the memory receives a programming instruction (such as "02H", "F2H", etc.), it can first determine the multi-byte storage unit corresponding to the programming instruction that needs to be programmed, that is, determine the Programming instructions, which memory cells in the memory need to be programmed.

[0065] Step 102, the memory compares...

Embodiment 2

[0074] refer to figure 2 , which shows a flow chart of a memory programming method according to Embodiment 2 of the present invention, and the method may specifically include the following steps:

[0075] In step 201, after receiving a programming instruction, the memory determines a multi-byte storage unit corresponding to the programming instruction that needs to be programmed.

[0076] In the embodiment of the present invention, the memory may include an internal charge pump, and the input voltage of the internal charge pump is a power supply voltage, and the memory may also include a plurality of storage units, and the programming and erasing operations of the memory are as follows: Refers to performing programming and erasing operations on storage cells inside the memory. Taking non-volatile memory as an example, the non-volatile memory includes an array of storage cells, one of which is usually a floating gate device that can store charges, compared to general MOS tran...

Embodiment 3

[0123] refer to image 3 , shows a structural block diagram of a memory programming system according to Embodiment 3 of the present invention, wherein the memory is externally connected with a pre-set external power adapter board, the memory includes an internal charge pump and a plurality of storage units, the The input voltage of the internal charge pump is the power supply voltage. The system can specifically include the following modules:

[0124] A determining module 301, configured to, after receiving the programming instruction, determine the multi-byte storage unit corresponding to the programming instruction that needs to be programmed;

[0125] A comparison module 302, configured to compare the power supply voltage with a preset internal voltage;

[0126] The first selection module 303 is configured to select the internal charge pump to provide the programming voltage when the preset internal voltage threshold is less than or equal to the power supply voltage, and p...

technical field

[0001] The invention relates to the field of memory technology, in particular to a memory programming method and a memory programming system. Background technique

[0002] Memory (Memory) is a memory device in a computer system used to store programs and data. The information in the computer, including the input raw data, computer programs, intermediate running results and final running results are all stored in the memory. With the memory, the computer has the memory function to ensure normal work.

[0003] When programming a memory, a higher programming voltage is usually required to meet the programming requirements, but the voltage strength provided by the power supply voltage of the general memory is low, which cannot meet the programming requirements of the memory. Therefore, a boost circuit is usually provided inside the memory to increase the voltage strength provided by the power supply voltage to the voltage required for programming the memory. T...

Examples

Embodiment 1

[0062] refer to figure 1 , which shows a flow chart of a memory programming method according to Embodiment 1 of the present invention, and the method may specifically include the following steps:

[0063] Step 101 , after receiving a programming instruction, the memory determines a multi-byte storage unit corresponding to the programming instruction that needs to be programmed.

[0064] In the embodiment of the present invention, the memory may include a plurality of storage units, and the programming and erasing operations on the memory refer to programming and erasing operations on the storage units inside the memory. Therefore, after the memory receives a programming instruction (such as "02H", "F2H", etc.), it can first determine the multi-byte storage unit corresponding to the programming instruction that needs to be programmed, that is, determine the Programming instructions, which memory cells in the memory need to be programmed.

[0065] Step 102, the memory compares...

Embodiment 2

[0074] refer to figure 2 , which shows a flow chart of a memory programming method according to Embodiment 2 of the present invention, and the method may specifically include the following steps:

[0075] In step 201, after receiving a programming instruction, the memory determines a multi-byte storage unit corresponding to the programming instruction that needs to be programmed.

[0076] In the embodiment of the present invention, the memory may include an internal charge pump, and the input voltage of the internal charge pump is a power supply voltage, and the memory may also include a plurality of storage units, and the programming and erasing operations of the memory are as follows: Refers to performing programming and erasing operations on storage cells inside the memory. Taking non-volatile memory as an example, the non-volatile memory includes an array of storage cells, one of which is usually a floating gate device that can store charges, compared to general MOS tran...

Embodiment 3

[0123] refer to image 3 , shows a structural block diagram of a memory programming system according to Embodiment 3 of the present invention, wherein the memory is externally connected with a pre-set external power adapter board, the memory includes an internal charge pump and a plurality of storage units, the The input voltage of the internal charge pump is the power supply voltage. The system can specifically include the following modules:

[0124] A determining module 301, configured to, after receiving the programming instruction, determine the multi-byte storage unit corresponding to the programming instruction that needs to be programmed;

[0125] A comparison module 302, configured to compare the power supply voltage with a preset internal voltage;

[0126] The first selection module 303 is configured to select the internal charge pump to provide the programming voltage when the preset internal voltage threshold is less than or equal to the power supply voltage, and p...

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