LED chip and manufacturing method thereof

Abstract

The invention discloses an LED chip and a manufacturing method thereof. The LED chip comprises a substrate, a buffer layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer whichare arranged in turn. The P-type GaN layer is provided with a current barrier layer and a current spreading layer covering the current spreading layer. The current spreading layer is provided with anAl2O3 particle layer. The Al2O3 particle layer, the current spreading layer and the current barrier layer are provided with electrode holes. The LED chip is etched to form steps and the N-type GaN layer is exposed. The Al2O3 particle layer is provided with a P-type electrode. The step surface of the N-type GaN layer is provided with an N-type electrode. The area which is arranged on the upper surface of the LED chip and outside the upper surface of the metal electrode is provided with a transparent insulating layer. The Al2O3 particle layer is arranged between the current spreading layer andthe transparent insulating layer so that the light extraction angle of the chip can be effectively increased and the light extraction efficiency of the chip can be enhanced and the brightness of the LED chip can be enhanced. The Al2O3 particle layer is prepared through the rapid annealing process after evaporation of the Al target material and formation of the pure aluminum layer on the current spreading layer so that the manufacturing method is simple.

Description

technical field

[0001] The invention relates to the technical field of semiconductor LEDs, in particular to an LED chip and a manufacturing method thereof. Background technique

[0002] At present, the third-generation semiconductor materials have been widely used in various fields of human production and life, and play an important role in them. Gallium nitride (GaN) material, as an important part of the third-generation semiconductor material family, has also been widely used, and it plays an irreplaceable role in the LED semiconductor industry. GaN material is a hexagonal wurtzite structure, which has the advantages of stable chemical properties, high temperature resistance, large band gap, and high electron drift saturation velocity. Therefore, GaN-based materials are widely used in the preparation of electronic devices such as LED chips, blue LEDs, green LEDs, and ultraviolet LEDs, and are widely used in various fields of production and life such as lighting, medical t...

Examples

Embodiment 1

[0045] In order to better describe the present invention, an embodiment of the present invention provides a method for manufacturing a high-brightness LED, including the following steps:

[0046] 1. On the sapphire substrate 1, a buffer layer 2, an N-type GaN layer 3, a multi-quantum well layer 4, and a P-type GaN layer 5 are sequentially grown on the sapphire substrate 1 by MOCVD, thereby preparing an LED epitaxial wafer ; Wherein, the thickness of the epitaxial layer of the LED epitaxial wafer is 6.5 μm.

[0047] 2. Deposit a layer of SiO on the epitaxial wafer by PECVD 2 film, with a thickness of The pattern (CB pattern) of the current blocking layer is prepared by photolithography etching, and the photoresist is removed to obtain the current blocking layer 6; the current blocking layer is provided with a P-region electrode hole for subsequent formation of a P-type electrode.

[0048] 3. Evaporate a layer of indium tin oxide film (ITO) on the LED epitaxial wafer by sputt...

Embodiment 2

[0055] The embodiment of the present invention provides another method for manufacturing a high-brightness LED chip, including the following steps:

[0056] 1. On the sapphire substrate 1, a buffer layer 2, an N-type GaN layer 3, a multi-quantum well layer 4, and a P-type GaN layer 5 are sequentially grown on the sapphire substrate 1 by MOCVD, thereby preparing an LED epitaxial wafer ; Wherein, the thickness of the epitaxial layer of the LED epitaxial wafer is 6.5 μm.

[0057] 2. Deposit a layer of SiO on the epitaxial wafer by PECVD 2 film, SiO 2 The thickness of the film is The pattern (CB pattern) of the current blocking layer is etched and prepared by photolithography, and the photoresist is removed to obtain the current blocking layer 6 .

[0058] 3. A layer of indium tin oxide thin film (ITO) is vapor-deposited on the epitaxial wafer by sputtering, and as the current spreading layer 7, the thickness of the indium tin oxide thin film is And evaporate a layer of simpl...

technical field

[0001] The invention relates to the technical field of semiconductor LEDs, in particular to an LED chip and a manufacturing method thereof. Background technique

[0002] At present, the third-generation semiconductor materials have been widely used in various fields of human production and life, and play an important role in them. Gallium nitride (GaN) material, as an important part of the third-generation semiconductor material family, has also been widely used, and it plays an irreplaceable role in the LED semiconductor industry. GaN material is a hexagonal wurtzite structure, which has the advantages of stable chemical properties, high temperature resistance, large band gap, and high electron drift saturation velocity. Therefore, GaN-based materials are widely used in the preparation of electronic devices such as LED chips, blue LEDs, green LEDs, and ultraviolet LEDs, and are widely used in various fields of production and life such as lighting, medical t...

Examples

Embodiment 1

[0045] In order to better describe the present invention, an embodiment of the present invention provides a method for manufacturing a high-brightness LED, including the following steps:

[0046] 1. On the sapphire substrate 1, a buffer layer 2, an N-type GaN layer 3, a multi-quantum well layer 4, and a P-type GaN layer 5 are sequentially grown on the sapphire substrate 1 by MOCVD, thereby preparing an LED epitaxial wafer ; Wherein, the thickness of the epitaxial layer of the LED epitaxial wafer is 6.5 μm.

[0047] 2. Deposit a layer of SiO on the epitaxial wafer by PECVD 2 film, with a thickness of The pattern (CB pattern) of the current blocking layer is prepared by photolithography etching, and the photoresist is removed to obtain the current blocking layer 6; the current blocking layer is provided with a P-region electrode hole for subsequent formation of a P-type electrode.

[0048] 3. Evaporate a layer of indium tin oxide film (ITO) on the LED epitaxial wafer by sputt...

Embodiment 2

[0055] The embodiment of the present invention provides another method for manufacturing a high-brightness LED chip, including the following steps:

[0056] 1. On the sapphire substrate 1, a buffer layer 2, an N-type GaN layer 3, a multi-quantum well layer 4, and a P-type GaN layer 5 are sequentially grown on the sapphire substrate 1 by MOCVD, thereby preparing an LED epitaxial wafer ; Wherein, the thickness of the epitaxial layer of the LED epitaxial wafer is 6.5 μm.

[0057] 2. Deposit a layer of SiO on the epitaxial wafer by PECVD 2 film, SiO 2 The thickness of the film is The pattern (CB pattern) of the current blocking layer is etched and prepared by photolithography, and the photoresist is removed to obtain the current blocking layer 6 .

[0058] 3. A layer of indium tin oxide thin film (ITO) is vapor-deposited on the epitaxial wafer by sputtering, and as the current spreading layer 7, the thickness of the indium tin oxide thin film is And evaporate a layer of simpl...

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