Preparation method of chrome-silicon sputtering target material

Abstract

The invention provides a preparation method of a chrome-silicon sputtering target material. The method comprises the following steps of 1, mixing chrome powder with silicon powder, adding a powder mixture into a mold, and compacting the powder mixture; 2, sintering the mold in the vacuum condition, wherein the sintering process comprises a first heat preservation stage, a second heat preservationstage and a third heat preservation stage; and 3, after sintering, cooling the mold in inert atmosphere, so that the chrome-silicon sputtering target material is obtained. The compactness of the chrome-silicon sputtering target material obtained through the preparation method is greater than 99%, and the magnetron sputtering requirements for target material purity and density are met.

Description

technical field

[0001] The invention belongs to the field of alloy targets, and relates to a method for preparing a target, in particular to a method for preparing a chromium-silicon sputtering target. Background technique

[0002] Sputtering is one of the main technologies for preparing thin film materials. It uses ions generated by ion sources to accelerate and gather in a vacuum to form a high-speed energy ion beam, which bombards the solid surface, and the kinetic energy exchange occurs between the ions and the solid surface atoms. The atoms on the surface of the solid are separated from the solid and deposited on the surface of the substrate. The bombarded solid is the raw material for preparing the sputtering deposition film, which is generally called a sputtering target.

[0003] Chromium silicon alloy target is a new type of alloy target, as a good conductor for vacuum sputtering, it can be used in the field of electronic gate materials and electronic thin films. In...

Examples

Embodiment 1

[0048] This embodiment provides a method for preparing a chromium-silicon sputtering target, the process of which is as follows figure 1 Shown, described preparation method comprises the following steps:

[0049] (1) Mix chromium powder and silicon powder under the ball mill for not less than 24h, the mass ratio of chromium powder and silicon powder is 2:3, the ball-to-material ratio of the ball mill is 1:10, and the particle size of the chromium powder is < 45 μm, the particle size of the silicon powder is 3-5 μm, and the mixed powder is added into the mold for compaction, and the flatness of the powder in the mold after compaction is <0.5mm;

[0050] (2) sintering the mold under vacuum conditions, the sintering includes a first heat preservation stage, a second heat preservation stage and a third heat preservation stage;

[0051] The vacuum degree of the first heat preservation stage is 40Pa, the temperature is 900°C, the heating rate is 8°C / min, and the time is 2h;

[005...

Embodiment 2

[0056] This embodiment provides a method for preparing a chromium-silicon sputtering target, the process of which is as follows figure 1 Shown, described preparation method comprises the following steps:

[0057] (1) Mix chromium powder and silicon powder under the ball mill for not less than 24h, the mass ratio of chromium powder and silicon powder is 4.5:5.5, the ball-to-material ratio of the ball mill is 1:12, and the particle size of the chromium powder< 45 μm, the particle size of the silicon powder is 3-5 μm, and the mixed powder is added into the mold for compaction, and the flatness of the powder in the mold after compaction is <0.5mm;

[0058] (2) sintering the mold under vacuum conditions, the sintering includes a first heat preservation stage, a second heat preservation stage and a third heat preservation stage;

[0059] The vacuum degree of the first heat preservation stage is 35Pa, the temperature is 1000°C, the heating rate is 10°C / min, and the time is 1h;

[0...

Embodiment 3

[0064] This embodiment provides a method for preparing a chromium-silicon sputtering target, the process of which is as follows figure 1 Shown, described preparation method comprises the following steps:

[0065] (1) Mix chromium powder and silicon powder under ball milling for not less than 24 hours, the mass ratio of chromium powder and silicon powder is 3:7, the ball-to-material ratio of the ball mill is 1:11, and the particle size of the chromium powder is < 45 μm, the particle size of the silicon powder is 3-5 μm, and the mixed powder is added into the mold for compaction, and the flatness of the powder in the mold after compaction is <0.5mm;

[0066] (2) sintering the mold under vacuum conditions, the sintering includes a first heat preservation stage, a second heat preservation stage and a third heat preservation stage;

[0067] The vacuum degree of the first heat preservation stage is 30Pa, the temperature is 950°C, the heating rate is 9°C / min, and the time is 1.5h; ...

technical field

[0001] The invention belongs to the field of alloy targets, and relates to a method for preparing a target, in particular to a method for preparing a chromium-silicon sputtering target. Background technique

[0002] Sputtering is one of the main technologies for preparing thin film materials. It uses ions generated by ion sources to accelerate and gather in a vacuum to form a high-speed energy ion beam, which bombards the solid surface, and the kinetic energy exchange occurs between the ions and the solid surface atoms. The atoms on the surface of the solid are separated from the solid and deposited on the surface of the substrate. The bombarded solid is the raw material for preparing the sputtering deposition film, which is generally called a sputtering target.

[0003] Chromium silicon alloy target is a new type of alloy target, as a good conductor for vacuum sputtering, it can be used in the field of electronic gate materials and electronic thin films. In...

Examples

Embodiment 1

[0048] This embodiment provides a method for preparing a chromium-silicon sputtering target, the process of which is as follows figure 1 Shown, described preparation method comprises the following steps:

[0049] (1) Mix chromium powder and silicon powder under the ball mill for not less than 24h, the mass ratio of chromium powder and silicon powder is 2:3, the ball-to-material ratio of the ball mill is 1:10, and the particle size of the chromium powder is < 45 μm, the particle size of the silicon powder is 3-5 μm, and the mixed powder is added into the mold for compaction, and the flatness of the powder in the mold after compaction is <0.5mm;

[0050] (2) sintering the mold under vacuum conditions, the sintering includes a first heat preservation stage, a second heat preservation stage and a third heat preservation stage;

[0051] The vacuum degree of the first heat preservation stage is 40Pa, the temperature is 900°C, the heating rate is 8°C / min, and the time is 2h;

[005...

Embodiment 2

[0056] This embodiment provides a method for preparing a chromium-silicon sputtering target, the process of which is as follows figure 1 Shown, described preparation method comprises the following steps:

[0057] (1) Mix chromium powder and silicon powder under the ball mill for not less than 24h, the mass ratio of chromium powder and silicon powder is 4.5:5.5, the ball-to-material ratio of the ball mill is 1:12, and the particle size of the chromium powder< 45 μm, the particle size of the silicon powder is 3-5 μm, and the mixed powder is added into the mold for compaction, and the flatness of the powder in the mold after compaction is <0.5mm;

[0058] (2) sintering the mold under vacuum conditions, the sintering includes a first heat preservation stage, a second heat preservation stage and a third heat preservation stage;

[0059] The vacuum degree of the first heat preservation stage is 35Pa, the temperature is 1000°C, the heating rate is 10°C / min, and the time is 1h;

[0...

Embodiment 3

[0064] This embodiment provides a method for preparing a chromium-silicon sputtering target, the process of which is as follows figure 1 Shown, described preparation method comprises the following steps:

[0065] (1) Mix chromium powder and silicon powder under ball milling for not less than 24 hours, the mass ratio of chromium powder and silicon powder is 3:7, the ball-to-material ratio of the ball mill is 1:11, and the particle size of the chromium powder is < 45 μm, the particle size of the silicon powder is 3-5 μm, and the mixed powder is added into the mold for compaction, and the flatness of the powder in the mold after compaction is <0.5mm;

[0066] (2) sintering the mold under vacuum conditions, the sintering includes a first heat preservation stage, a second heat preservation stage and a third heat preservation stage;

[0067] The vacuum degree of the first heat preservation stage is 30Pa, the temperature is 950°C, the heating rate is 9°C / min, and the time is 1.5h; ...

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