Components for semiconductor manufacturing equipment

Abstract

The semiconductor manufacturing device component of the present invention is a structure in which a hollow ceramic shaft is provided on the back side of a ceramic plate whose surface is a wafer loading surface. The semiconductor manufacturing device component comprises an RF electrode embedded in the ceramic plate, an RF connector disposed outside the hollow interior of the ceramic shaft, and an RF connecting rod component disposed between the RF connector and the RF electrode. The RF connecting rod component has a branch portion consisting of a plurality of RF rods, and the branch portion continues to the outside of the ceramic shaft.

Description

Technical Field

[0001] The present invention relates to a member for semiconductor manufacturing equipment. Background Art

[0002] In semiconductor manufacturing devices such as etching devices and CVD devices, a semiconductor manufacturing device component is sometimes used, which has a structure in which a cylindrical ceramic shaft is connected to the back of a disc-shaped ceramic plate whose surface is a wafer loading surface. As such a semiconductor manufacturing device component, a component is known in which a high-frequency electrode (RF electrode) is buried in a ceramic plate and plasma is generated using the RF electrode. For example, in a semiconductor manufacturing device component of Patent Document 1, a plurality of RF rods are connected to the RF electrode, and the plurality of RF rods branch from an RF connector arranged in the hollow interior of the ceramic shaft. In Patent Document 1, since there are a plurality of RF rods instead of a single RF rod, the current flowing through each RF rod can be reduced, and the heat generated by each RF rod is also reduced. Therefore, it is difficult to generate hot spots on the ceramic plate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-184642 Summary of the invention

[0006] Problems to be solved by the invention

[0007] However, if an RF connector is arranged inside the hollow of the ceramic shaft as in Patent Document 1, the temperature inside the hollow of the ceramic shaft may increase due to the heat generated by the RF connector. In this case, even if the heat generated by the RF rod is small, the temperature of the RF rod is likely to rise, and a hot spot may be generated on the ceramic plate.

[0008] The present invention has been made to solve such a problem, and a main object of the present invention is to reliably prevent the generation of hot spots on a ceramic plate in a member for a semiconductor manufacturing apparatus including a plurality of RF rods.

[0009] Solutions to Solve Problems

[0010] The semiconductor manufacturing device member of the present invention has a structure in which a hollow ceramic shaft is provided on the back side of a ceramic plate whose surface is a wafer mounting surface, and comprises:

[0011] An RF electrode, which is embedded in the ceramic plate;

[0012] an RF connector disposed outside the hollow interior of the ceramic shaft; and

[0013] an RF link member disposed between the RF connector and the RF electrode,

[0014] The RF link member has a branch portion consisting of a plurality of RF rods, and the branch portion continues to an outer side of the ceramic shaft.

[0015] In the semiconductor manufacturing device component, the RF connecting rod component has a branch portion composed of a plurality of RF rods. As a result, the surface area of ​​the current flow path of the RF connecting rod component is increased, so that the increase in resistance caused by the skin effect can be suppressed. In addition, the current flowing through each RF rod becomes smaller, so the heat generated by each RF rod is reduced. On the other hand, the RF connector is arranged on the outside of the hollow interior of the ceramic shaft. Therefore, even if the RF connector generates heat, the temperature of the hollow interior of the ceramic shaft will not increase. Therefore, it will not cause a situation in which the temperature of the RF rod arranged in the hollow interior of the ceramic shaft is easy to rise. Therefore, according to the semiconductor manufacturing device component of the present invention, it is possible to reliably prevent the generation of hot spots on the ceramic plate.

[0016] In the semiconductor manufacturing device component of the present invention, the plurality of RF rods may be gathered into one at a first gathering portion near the back of the ceramic plate and connected to the RF electrode. In this way, when the RF connecting rod component is connected to the RF electrode, the number of holes provided in the ceramic plate can be reduced.

[0017] In the semiconductor manufacturing apparatus member of the present invention, the plurality of RF rods may be independently connected to the RF electrode. Thus, even if one of the plurality of RF rods is detached from the RF electrode for some reason, power can be supplied to the RF electrode from the other RF rods.

[0018] In the component for semiconductor manufacturing apparatus of the present invention, the RF electrode may also be provided on multiple surfaces with different heights inside the ceramic plate. In this way, the density of the plasma can be changed for each surface with different heights of the RF electrode. In this case, a plurality of RF rods may also be independently connected to each surface of the RF electrode. In this way, the distance between the RF rods can be ensured. For example, by increasing the distance between the RF rods that generate heat, the RF rods can be prevented from heating each other. In addition, since the RF electrode close to the back side of the ceramic plate and the RF electrode far from the back side of the ceramic plate are respectively connected to the RF rods, the depth of the hole of the RF rod connected to the RF electrode close to the back side of the ceramic plate becomes shallower, the processing load of the ceramic plate becomes smaller, and the risk of breakage can be suppressed. In contrast, when a plurality of RF rods are connected to the RF electrode far from the back side of the ceramic plate, the depth of the holes of the plurality of RF rods becomes deeper, the processing load of the ceramic plate becomes larger, and the risk of breakage increases.

[0019] In the semiconductor manufacturing device component of the present invention, the plurality of RF rods may be gathered into one at a second gathering portion near the RF connector and connected to the RF connector. In this way, when the RF connecting rod component is connected to the RF connector, the number of connection parts between the RF connecting rod component and the RF connector can be reduced.

[0020] In the semiconductor manufacturing device member of the present invention, the cross section of the RF rod when cut in a direction perpendicular to the length direction may have at least one concave portion in the outer periphery. In this way, the surface area of ​​the RF rod becomes larger than that of the case without the concave portion, so that the increase in resistance caused by the skin effect can be further suppressed, and the heat generation of each RF rod is further reduced.

[0021] The component for semiconductor manufacturing equipment of the present invention may include: a resistance heating element, which is buried in the ceramic plate; and a pair of heating rods, which are connected to the resistance heating element and pass through the hollow interior of the ceramic shaft and are arranged to the outside of the ceramic shaft. The base end of the RF link member may be located closer to the ceramic shaft than the base end of the heating rod. In this way, since the heating portion of the RF link member becomes shorter, the amount of heat generated is reduced as a result. Furthermore, since the operation performed on the base end of the RF link member and the operation performed on the base end of the heating rod are not easy to interfere with each other, it is easy to perform each operation smoothly. In addition, since the length of the RF link member can be made relatively short, the resistance of the RF link member can be suppressed to a low level, and the amount of heat generated by the RF link member can be suppressed to a low level.

[0022] The component for semiconductor manufacturing apparatus of the present invention may include: a resistance heating element, which is buried in the ceramic plate; and a pair of heating rods, which are connected to the resistance heating element and pass through the hollow interior of the ceramic shaft and are arranged to the outside of the ceramic shaft. The RF rod is preferably thicker than the heating rod. That is, the diameter of the RF rod is preferably larger than the diameter of the heating rod. In this way, the surface area of ​​the RF rod becomes larger, so the resistance of the RF current flowing through the RF rod becomes lower. Therefore, the heat generated by each RF rod is further reduced. It should be noted that, in the case where the component for semiconductor manufacturing apparatus has a first collection part, it is preferred that the diameter of the first collection part is larger than the diameter of the heating rod. In the case where the component for semiconductor manufacturing apparatus has a second collection part, it is preferred that the diameter of the second collection part is larger than the diameter of the heating rod. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] [ Figure 1 ] A longitudinal cross-sectional view of the ceramic heater 10.

[0024] [ Figure 2 ] A longitudinal cross-sectional view of the peripheral portion of the RF link member 140.

[0025] [ Figure 3]A longitudinal cross-sectional view of the peripheral portion of the RF link member 240.

[0026] [ Figure 4 ] A longitudinal cross-sectional view of the peripheral portion of the RF link member 340.

[0027] [ Figure 5 ] A cross-sectional view of a modified example of the RF rod 42.

[0028] [ Figure 6 ] A longitudinal cross-sectional view of a ceramic heater having an RF electrode 416. DETAILED DESCRIPTION

[0029] Next, preferred embodiments of the present invention will be described below with reference to the drawings. Figure 1 It is a longitudinal cross-sectional view of the ceramic heater 10 .

[0030] It should be noted that in this specification, "up" and "down" do not represent absolute positional relationships, but rather relative positional relationships. Therefore, depending on the orientation of the ceramic heater 10, "up" and "down" may also become "down", "up", or "left", "right", or "front", "back".

[0031] The ceramic heater 10 is one of the components for semiconductor manufacturing equipment. The ceramic heater 10 is used to support and heat a wafer that is subjected to CVD, etching, and other processes using plasma, and is installed inside a chamber for semiconductor processing (not shown). The ceramic heater 10 includes a ceramic plate 12, a ceramic shaft 20, a heating rod 24, an RF connector 30, and an RF link member 40.

[0032] The ceramic plate 12 is a disc-shaped member whose main component is AlN. The ceramic plate 12 has a chip mounting surface 12a on which a chip can be mounted. A ceramic shaft 20 is joined to the surface (back side) 12b of the ceramic plate 12 on the opposite side to the chip mounting surface 12a. A resistive heating element 14 and an RF electrode 16 are buried in the ceramic plate 12. The resistive heating element 14 is formed by wiring a coil whose main component is Mo in a one-stroke manner so as to cover the entire surface of the ceramic plate 12 and be substantially parallel to the chip mounting surface 12a. The RF electrode 16 is a disc-shaped thin-layer electrode whose diameter is slightly smaller than that of the ceramic plate 12, and is formed by a mesh made of fine metal wire whose main component is Mo and woven into a sheet-shaped mesh. The RF electrode 16 is buried between the resistive heating element 14 and the chip mounting surface 12a in the ceramic plate 12 in a manner substantially parallel to the chip mounting surface 12a. The material of the resistance heating element 14 and the RF electrode 16 is Mo because the thermal expansion coefficient is close to AlN, which is the main component of the ceramic plate 12, and it is difficult to generate cracks when the ceramic plate 12 is manufactured. As for the resistance heating element 14 and the RF electrode 16, even if it is a material other than Mo, as long as it is a conductive material with a thermal expansion coefficient close to AlN, it can be used. It should be noted that a thermocouple (not shown) for detecting the temperature of the ceramic plate 12 is inserted in the area surrounded by the ceramic shaft 20 on the back side 12b of the ceramic plate 12.

[0033] The ceramic shaft 20 is a cylindrical member mainly composed of AlN, and has a first flange 20a around the upper opening and a second flange 20b around the lower opening. The end face of the first flange 20a is bonded to the back face 12b of the ceramic plate 12 by solid phase bonding. The end face of the second flange 20b is fixed to a cavity not shown.

[0034] The heating rod 24 is a rod with a circular cross section formed of a metal such as Mo. The upper end of one of the pair of heating rods 24 is connected to one end of the resistance heating element 14, and the upper end of the other heating rod 24 is connected to the other end of the resistance heating element 14. The lower ends of the pair of heating rods 24 are exposed outside the hollow interior 22 of the ceramic shaft 20 and are connected to a heater power supply 28 via a cable 26. The heater power supply 28 is an AC power supply in this embodiment, but a DC power supply may also be used.

[0035] The RF connector 30 is arranged on the outside (lower side) of the hollow interior 22 of the ceramic shaft 20. The RF connector 30 includes a socket 32 ​​and an RF base rod 36. The socket 32 ​​is a substantially rectangular parallelepiped or substantially cylindrical member formed of a conductive metal such as Ni. Two insertion holes 34 for inserting the RF rod 42 of the RF link member 40 are provided on the upper surface of the socket 32. The insertion holes 34 hold the inserted RF rod 42. The RF base rod 36 is a rod formed of a conductive metal such as Ni, and is integrated with the lower surface of the socket 32. The RF base rod 36 is connected to an RF power source 38 via a cable 37.

[0036] The RF link member 40 has a branching portion 44 composed of a plurality of (here, two) RF rods 42. The RF rod 42 is a rod with a circular cross section formed of a conductive metal such as Ni. The plurality of RF rods 42 are connected to the RF electrode 16 by passing the upper ends through the hole 13 provided on the back surface 12b of the ceramic plate 12 while maintaining the branching state. In addition, the plurality of RF rods 42 are inserted into the insertion hole 34 of the RF connector 30 while maintaining the branching state. In the present embodiment, the RF link member 40 is a branching portion 44, which reaches the RF connector 30 from the RF electrode 16 through the hollow interior 22 of the ceramic shaft 20. Therefore, a part of the branching portion 44 is arranged in the hollow interior 22 of the ceramic shaft 20. The RF link member 40 is connected to the RF power source 38 via the RF connector 30 and the cable 37. The lower end of the RF rod 42 is located closer to the ceramic shaft 20 than the lower end of the heating rod 24. The heating rod 24 is not arranged between the RF rods 42. The interval between the RF rods 42 is greater than the diameter of the RF rod 42.

[0037] Next, an example of using the ceramic heater 10 is described. The ceramic heater 10 is arranged in a chamber not shown in the figure, and the wafer is placed on the wafer mounting surface 12a. Then, the voltage of the heater power supply 28 is applied to the resistive heating element 14 via the cable 26 and the heating rod 24, thereby heating the wafer. Specifically, the temperature of the wafer is obtained based on the detection signal of the thermocouple not shown in the figure, and the voltage applied to the resistive heating element 14 is controlled so that the temperature becomes a set temperature (for example, 350°C or 300°C). In addition, by applying an AC high-frequency voltage of the RF power supply 38 to the RF electrode 16 via the cable 37, the RF connector 30 and the RF connecting rod member 40, a plasma is generated between parallel plate electrodes composed of opposing horizontal electrodes not shown in the figure arranged above the chamber and the RF electrode 16 buried in the ceramic plate 12, and the plasma is used to perform CVD film formation or etching on the wafer. If a DC voltage is applied to the RF electrode 16, it can be used as an electrostatic electrode (ESC electrode).

[0038] In the ceramic heater 10 described in detail above, the RF link member 40 has a branch portion 44 composed of a plurality of RF rods 42. As a result, the surface area of ​​the current flow path of the RF link member 40 is increased, so that the increase in resistance caused by the skin effect can be suppressed. In addition, the current flowing through each RF rod becomes smaller, so the heat generated by each RF rod is reduced. On the other hand, the RF connector 30 is arranged on the outside of the hollow interior 22 of the ceramic shaft 20. Therefore, even if the RF connector 30 generates heat, the temperature of the hollow interior 22 of the ceramic shaft 20 will not increase. Therefore, it will not cause a situation in which the temperature of the RF rod 42 arranged in the hollow interior 22 of the ceramic shaft 20 is easy to rise. Therefore, according to the ceramic heater 10, it is possible to reliably prevent the generation of hot spots on the ceramic plate 12. In addition, since the RF connector 30 is arranged on the outside of the hollow interior 22 of the ceramic shaft 20, the connection operation of the RF link member 40 and the RF connector 30 can be smoothly performed.

[0039] In addition, since the plurality of RF rods 42 are independently connected to the RF electrode 16, even if one of the plurality of RF rods 42 is detached from the RF electrode 16 for some reason, power can be supplied to the RF electrode 16 from the other RF rods 42. In addition, since the plurality of RF rods 42 are connected to the RF electrode 16, an increase in resistance due to the skin effect does not occur, and heat generation can be suppressed.

[0040] Moreover, the base end (lower end) of the RF link member 40 is located closer to the ceramic shaft 20 than the base end (lower end) of the heating rod 24. As a result, the operation performed on the base end of the RF link member 40 and the operation performed on the base end of the heating rod 24 are not easily interfered with, so it is easy to smoothly perform each operation. In addition, since the length of the RF link member 40 can be relatively short, the resistance of the RF link member 40 can be suppressed to a low level, and the heat generated by the RF link member 40 can be suppressed to a low level. Furthermore, since no high-frequency current flows through the heating rod 24, there is no skin effect, and since the resistance is lower than that of the RF rod 42, the heat generated by the heating rod 24 will hardly increase even if it is extended.

[0041] Furthermore, since the influence of noise is weakened as the distance from the noise source increases, the possibility of the voltage applied to the heating rod 24 being affected by the high-frequency voltage applied to the RF rod 42 and changing is reduced by not arranging the heating rod 24 between the RF rods 42 .

[0042] Furthermore, the interval between the RF rods 42 is equal to or larger than the diameter of the RF rod 42 , and the plurality of RF rods 42 are arranged with sufficient intervals, so that the possibility that one RF rod 42 is affected by the heat generated by other RF rods 42 is low.

[0043] Furthermore, the RF rod 42 is preferably thicker than the heating rod 24 (the diameter of the RF rod 42 is larger than the diameter of the heating rod 24). This increases the surface area of ​​the RF rod 42, thereby reducing the resistance of the RF current flowing through the RF rod 42. Therefore, the heat generated by each RF rod is further reduced.

[0044] It should be noted that, needless to say, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various forms as long as it belongs to the technical scope of the present invention.

[0045] For example, the RF link member 40 of the above embodiment may be replaced with Figure 2 The RF link member 140. Figure 2 In the drawings, the same reference numerals are given to the same components as those in the above-mentioned embodiment. The RF link member 140 includes a branch portion 144 composed of a plurality of (here, two) RF rods 142 and a cylindrical collection portion 145 that collects the plurality of RF rods 142 into one near the back side 12b of the ceramic plate 12. The lower ends of the RF rods 142 are inserted into the insertion holes 34 of the RF connector 30 while maintaining the branched state. The upper ends of the RF rods 142 are collected into one rod at the collection portion 145 and connected to the RF electrode 16. The RF link member 140 reaches the RF connector 30 from the RF electrode 16 via the hollow interior 22 of the ceramic shaft 20. A portion of the branch portion 144 is disposed in the hollow interior 22 of the ceramic shaft 20. The lower end of the RF link member 140 is located at a position higher than the heating rod 24 (see Figure 1 ) is closer to the ceramic shaft 20. Figure 2 In the embodiment, since most of the RF link member 140 is composed of a plurality of RF rods 142, heat generation can be suppressed. In addition, when the RF link member 140 is connected to the RF electrode 16, the number of holes 13 provided in the ceramic plate 12 can be reduced. It is preferred that the RF rod 142 and the collecting portion 145 are thicker than the heating rod 24. In this way, since the surface area of ​​the RF rod 142 and the collecting portion 145 increases, the resistance of the RF current flowing through the RF rod 142 and the collecting portion 145 decreases, and the heat generation thereof decreases.

[0046] Instead of the RF link member 40 of the above embodiment, Figure 3 The RF link member 240. Figure 3In the embodiment, the same reference numerals are given to the same components as those in the above-mentioned embodiment. The RF link member 240 includes a branch portion 244 composed of a plurality of (here, two) RF rods 242, a cylindrical first collecting portion 245 that collects the plurality of RF rods 242 into one near the back side 12b of the ceramic plate 12, and a cylindrical second collecting portion 246 that collects the plurality of RF rods 242 into one near the RF connector 30. The upper ends of the RF rods 242 are collected into one rod at the first collecting portion 245 and connected to the RF electrode 16. The lower ends of the RF rods 242 are collected into one rod at the second collecting portion 246 and inserted into the insertion hole 34 of the RF connector 30. The RF link member 240 reaches the RF connector 30 from the RF electrode 16 via the hollow interior 22 of the ceramic shaft 20. A portion of the branch portion 244 is arranged in the hollow interior 22 of the ceramic shaft 20. The lower end of the RF link member 240 is located at a position higher than the heating rod 24 (refer to Figure 1 ) is closer to the ceramic shaft 20. Figure 3 In the embodiment, when the RF link member 240 is connected to the RF electrode 16, the hole 13 provided in the ceramic plate 12 can be reduced. In addition, when the RF link member 240 is connected to the RF connector 30, the connection portion (insertion hole 34) can be reduced compared with the above-mentioned embodiment. It should be noted that a plurality of RF link members 240 may be provided between the RF electrode 16 and the RF connector 30. The RF rod 242 and the first and second collection parts 245 and 246 are preferably thicker than the heating rod 24. In this way, since the surface area of ​​the RF rod 242 and the first and second collection parts 245 and 246 increases, the resistance of the RF current flowing through the RF rod 242 and the first and second collection parts 245 and 246 becomes lower, and the heat generation thereof becomes smaller.

[0047] Instead of the RF link member 40 of the above embodiment, Figure 4 The RF link member 340. Figure 4 In the embodiment, the same reference numerals are given to the same components as those in the above-mentioned embodiment. The RF link member 340 includes a branch portion 344 composed of a plurality of (here, two) RF rods 342 and a collection portion 346 that collects the plurality of RF rods 342 into one near the RF connector 30. The RF rods 342 are connected to the RF electrode 16 at the upper ends while maintaining the branched state. The lower ends of the RF rods 342 are collected into one rod at the collection portion 346 and inserted into the insertion hole 34 of the RF connector 30. The RF link member 340 reaches the RF connector 30 from the RF electrode 16 via the hollow interior 22 of the ceramic shaft 20. A portion of the branch portion 344 is arranged in the hollow interior 22 of the ceramic shaft 20. The lower end of the RF link member 340 is located at a position higher than the heating rod 24 (see Figure 1 ) is closer to the ceramic shaft 20. Figure 4In the embodiment, when the RF link member 340 is connected to the RF connector 30, the connection part (insertion hole 34) can be reduced compared with the above-mentioned embodiment. It should be noted that a plurality of RF link members 340 may be provided between the RF electrode 16 and the RF connector 30. It is preferred that the RF rod 342 and the collection part 346 are thicker than the heating rod 24. In this way, the surface area of ​​the RF rod 342 and the collection part 346 becomes larger, so the resistance of the RF current flowing through the RF rod 342 and the collection part 346 becomes lower, and the heat generation thereof becomes smaller.

[0048] In the above-mentioned embodiment, the cross section of the RF rod 42 (the cross section when cut in a direction perpendicular to the longitudinal direction) is set to a circular shape, but it may also be set as follows: Figure 5 As shown in FIG. 1 , the RF rod 42 is provided with at least one (here, five) recessed portions 42a on the outer periphery of the cross section. Specifically, the RF rod 42 may also include at least one (here, five) grooves extending along the length direction. In this way, the surface area of ​​the RF rod 42 becomes larger than that of the case without the recessed portion 42a, so that the increase in resistance caused by the skin effect can be further suppressed, and the heat generation of each RF rod is further reduced.

[0049] In the above-mentioned embodiment, the RF electrode 16 is in the shape of a mesh, but may be in other shapes, for example, a coil shape, a flat shape, or a punched metal.

[0050] In the above embodiment, AlN is used as the ceramic material, but the present invention is not particularly limited thereto, and may be, for example, alumina, silicon nitride, silicon carbide, etc. In this case, the material of the resistance heating element 14 and the RF electrode 16 preferably has a thermal expansion coefficient close to that of the ceramic.

[0051] In the above-mentioned embodiment, the resistance heating element 14 and the RF electrode 16 are embedded in the ceramic plate 12, but an electrostatic electrode may be further embedded. In this way, the ceramic heater 10 also functions as an electrostatic chuck.

[0052] In the above-mentioned embodiment, a one-zone heater is exemplified in which the resistance heating element 14 is wired in a single stroke over the entire surface of the ceramic plate 12, but the present invention is not particularly limited thereto. For example, a multi-zone heater may be used in which the entire surface of the ceramic plate 12 is divided into a plurality of zones and the resistance heating element is wired in a single stroke in each zone. In this case, a pair of heating rods may be provided for the resistance heating element in each zone.

[0053] You can also use Figure 6 The RF electrode 416 is used to replace the RF electrode 16 of the above embodiment. Figure 6In the embodiment, the same reference numerals are given to the same components as those in the above-mentioned embodiment. The RF electrode 416 is formed by connecting the outer periphery of the inner circular electrode 416a and the inner periphery of the outer circular ring electrode 416b with a cylindrical connecting portion 416c. The inner circular electrode 416a and the outer circular ring electrode 416b are arranged in two layers on surfaces with different heights. One of the two RF rods 42 constituting the RF link member 40 (branch portion 44) is connected to the back side of the inner circular electrode 416a, and the other is connected to the back side of the outer circular ring electrode 416b. That is, the two RF rods 42 are connected to each surface of the RF electrode 416 with different heights. Even so, the same effect as that in the above-mentioned embodiment can be obtained. In addition, since the RF electrode 416 is arranged on multiple surfaces with different heights inside the ceramic plate 12, the density of the plasma can be changed for each surface of the RF electrode 416 with different heights. Furthermore, the two RF rods 42 are independently connected to the respective surfaces of the RF electrode 416, so that the distance between the two RF rods 42 can be ensured. For example, by increasing the distance between the two RF rods 42 that generate heat, the RF rods 42 can be prevented from heating each other. In addition, since the outer circular electrode 416b close to the back side 12b of the ceramic plate 12 and the inner circular electrode 416a far from the back side 12b are respectively connected to the RF rod 42, the depth of the hole of the RF rod 42 connected to the outer circular electrode 416b close to the back side 12b becomes shallower, the processing load of the ceramic plate 12 becomes smaller, and the risk of breakage can be suppressed. In contrast, when the two RF rods 42 are connected to the inner circular electrode 416a far from the back side 12b, the depth of the hole of the two RF rods 42 becomes deeper, the processing load of the ceramic plate 12 becomes larger, and the risk of breakage increases. It should be noted that in Figure 6 In the embodiment, the same resistance heating element 14 and heating rod 24 as those in the above embodiment may also be provided. Figure 6 In the embodiment, the RF link member 40 may be replaced by Figure 4 The RF link member 340 .

[0054] This application claims priority based on Japanese Patent Application No. 2019-146413 filed on August 8, 2019, the entire contents of which are incorporated herein by reference.

[0055] Industrial Applicability

[0056] The present invention can be used as a member used in semiconductor manufacturing equipment such as an etching device and a CVD device.

[0057] Explanation of symbols

[0058] 10: ceramic heater, 12: ceramic plate, 12a: wafer mounting surface, 12b: back surface, 13: hole, 14: resistance heating element, 16: RF electrode, 20: ceramic shaft, 20a: first flange, 20b: second flange, 22: hollow interior, 24: heating rod, 26: cable, 28: heater power supply, 30: RF connector, 32: socket, 34: insertion hole, 36: RF base rod, 37: cable, 38: RF power supply, 40: RF connecting rod member, 42: RF rod, 4 2a: recessed portion, 44: branching portion, 140: RF connecting rod member, 142: RF rod, 144: branching portion, 145: gathering portion, 240: RF connecting rod member, 242: RF rod, 244: branching portion, 245: first gathering portion, 246: second gathering portion, 340: RF connecting rod member, 342: RF rod, 344: branching portion, 346: gathering portion, 416: RF electrode, 416a: inner circular electrode, 416b: outer circular ring electrode, 416c: connecting portion.

Claims

1. A member for semiconductor manufacturing equipment, comprising a structure in which a hollow ceramic shaft is provided on the back side of a ceramic plate whose surface is a wafer mounting surface, and comprising: an RF electrode embedded in the ceramic plate; An RF connector comprising a socket and an RF base rod, wherein the socket and the RF base rod are both arranged outside the hollow interior of the ceramic shaft and below the lower opening of the hollow interior; and an RF link member disposed between the RF connector and the RF electrode, The RF link member has a branch portion consisting of a plurality of RF rods, the branch portion continuing to the outside of the ceramic shaft and below the lower opening of the ceramic shaft, The plurality of RF rods are gathered into one at a first gathering portion in front of the back surface of the ceramic plate and connected to the RF electrode. 2 . The semiconductor manufacturing apparatus member according to claim 1 , wherein the plurality of RF rods are connected to the RF electrodes, respectively.

3. The semiconductor manufacturing device member according to claim 2, wherein the RF electrode is provided on a plurality of surfaces having different heights inside the ceramic plate. The plurality of RF rods are respectively connected to respective surfaces of the RF electrode. 4 . The semiconductor manufacturing apparatus member according to claim 1 , wherein the plurality of RF rods are gathered into one at a second gathering portion in front of the RF connector and connected to the RF connector. 5 . The semiconductor manufacturing apparatus member according to claim 1 , wherein a cross section of the RF rod when cut in a direction perpendicular to the longitudinal direction has at least one concave portion in an outer peripheral portion.

6. The member for semiconductor manufacturing equipment according to any one of claims 1 to 3, comprising: a resistance heating element embedded in the ceramic plate; and A pair of heating rods are connected to the resistance heating element and pass through the hollow interior of the ceramic shaft and are arranged to the outside of the ceramic shaft. The base end of the RF link member is located closer to the ceramic shaft than the base end of the heating rod.

7. The member for semiconductor manufacturing equipment according to any one of claims 1 to 3, comprising: A resistance heating element, which is embedded in the ceramic plate, A pair of heating rods are connected to the resistance heating element and pass through the hollow interior of the ceramic shaft and are arranged to the outside of the ceramic shaft. The RF rod is thicker than the heating rod.

Images