Reaction chamber and semiconductor processing equipment

Abstract

The present invention provides a reaction chamber and semiconductor processing equipment, wherein the gate valve device of the reaction chamber comprises: a rotating shaft, which is rotatably arranged on the side where the transmission port of the inner cavity is located, and the first end and the second end of the rotating shaft pass through the outer cavity and extend to the outside of the outer cavity; a driving device, which is connected to the first end of the rotating shaft and is used to drive the rotating shaft to rotate; a door panel assembly, which is fixedly connected to the rotating shaft and has a cavity, in which a heating element is arranged, which is used to heat the inside of the inner cavity; a wiring channel is arranged in the rotating shaft, and the positive and negative wiring of the heating element extend to the outside of the second end face of the rotating shaft through the wiring channel; a moving contact assembly, which is connected to the second end of the rotating shaft, and the moving contact assembly is arranged to electrically connect the positive and negative wiring of the heating element to the power supply in a contact manner, and keep in contact with each other when the rotating shaft rotates. This scheme can improve the heating rate and heating uniformity in the chamber.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a reaction chamber and semiconductor processing equipment. Background Art

[0002] As the market continues to increase production capacity, the number of wafers (such as silicon wafers) that can be processed in a single batch by plate-type PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment is also increasing. At present, the increase in single-batch production is achieved by increasing the area of ​​a single-layer carrier to carry more wafers. However, due to the limitations of factors such as standing wave effect and electrode feed, the area of ​​the carrier can only be increased to a limited extent, which cannot meet the demand for increasing single-batch production.

[0003] In order to increase the single batch output, it can also be achieved by simultaneously transmitting multi-layer carriers, but there is the following problem, that is, the heater in the current reaction chamber is difficult to meet the requirements of heating rate and heating uniformity of the wafers on the multi-layer carrier. In the process of preparing amorphous silicon thin film using PECVD process, when other film forming conditions are fixed, the wafer temperature has a great influence on the film growth rate, film structure and film photoelectric properties, etc. Therefore, the current reaction chamber cannot guarantee the wafer film quality. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a reaction chamber and semiconductor processing equipment, which can not only improve the heating rate in the chamber so that the wafer can reach a stable process temperature in a short time, but also improve the heating uniformity of the wafers on the multi-layer carrier when the wafers on the multi-layer carrier are processed at the same time, thereby increasing the single batch output and ensuring the wafer film formation quality.

[0005] To achieve the purpose of the present invention, a reaction chamber is provided, which is applied to semiconductor processing equipment, including an outer cavity and an inner cavity arranged in the outer cavity, and a gate valve device for opening or closing a transmission port of the inner cavity, wherein the gate valve device includes:

[0006] A rotating shaft is rotatably disposed on a side of the inner cavity where the transmission port is located, and a first end and a second end of the rotating shaft pass through the outer cavity and extend to the outside of the outer cavity;

[0007] A driving device connected to the first end of the rotating shaft, and used to drive the rotating shaft to rotate so that the door panel assembly opens or closes the transmission port of the inner cavity;

[0008] The door panel assembly is fixedly connected to the rotating shaft and has a cavity, in which a heating element is arranged for heating the interior of the inner cavity; a wiring channel is arranged in the rotating shaft, the wiring channel is communicated with the cavity, and the positive and negative wiring of the heating element extend out of the second end surface of the rotating shaft through the wiring channel;

[0009] A moving contact assembly is connected to the second end of the rotating shaft. The moving contact assembly is configured to electrically connect the positive and negative wiring of the heating element to a power supply in a contact manner, and keep in contact with each other when the rotating shaft rotates.

[0010] Optionally, the door panel assembly includes:

[0011] A first door panel, which is adjacent to the transmission port when in a closed state, and a surface of the first door panel facing away from the transmission port is provided with an accommodating groove;

[0012] A second door panel, located on a side of the first door panel away from the transmission port, and fixedly connected to the first door panel, and forming the cavity with the accommodating groove;

[0013] The third door panel is located on the side of the second door panel away from the first door panel, and is fixedly connected to the first door panel and / or the second door panel, and is fixedly connected to the rotating shaft.

[0014] Optionally, the surface of the second door panel exposed to the accommodating groove is a glossy surface capable of reflecting heat.

[0015] Optionally, the dynamic contact component includes:

[0016] a first brush structure connected to the second end of the rotating shaft and electrically connected to the positive electrode connection and the negative electrode connection of the heating element;

[0017] The second brush structure is used to be electrically connected to a power supply. The second brush structure is fixed when the shaft rotates and is in electrical contact with the first brush structure. The first brush structure and the second brush structure can maintain contact with each other when the shaft rotates.

[0018] Optionally, the first brush structure includes:

[0019] A connecting cavity is fixedly connected to the second end of the rotating shaft, and the interior of the connecting cavity is communicated with the wiring channel;

[0020] The first positive brush and the first negative brush are fixedly connected to the connection cavity and are electrically connected to the positive electrode connection and the negative electrode connection of the heating element respectively.

[0021] Optionally, the first positive brush and the first negative brush both include:

[0022] First brush;

[0023] A first brush support, one end of which is fixedly connected to the first brush, and the other end of which passes through the connection cavity and extends into the interior of the connection cavity and is electrically connected to the positive electrode connection or the negative electrode connection of the heating element;

[0024] A brush seal is sleeved on the first brush support and is used to seal the gap between the first brush support and the connecting cavity, and the brush seal is electrically insulated from the first brush.

[0025] Optionally, the connecting cavity comprises a cavity body and a connecting flange, wherein the cavity body has an opening at one end away from the rotating shaft; the connecting flange closes the opening and is fixedly connected to the cavity body; a sealing ring is provided between the connecting flange and the cavity body for sealing the opening;

[0026] The other end of the first brush support is disposed through the connecting flange.

[0027] Optionally, the second brush structure includes:

[0028] A fixed seat, which is fixed when the rotating shaft rotates;

[0029] The second positive brush and the second negative brush are fixedly connected to the fixing seat and are used to be electrically connected to the power supply; the second positive brush and the second negative brush are respectively electrically contacted with the first positive brush and the first negative brush, and the second positive brush and the second negative brush are both arc-shaped and extend along the rotation paths of the first positive brush and the first negative brush respectively, so as to maintain contact with each other when the shaft rotates.

[0030] Optionally, the second positive brush and the second negative brush are in elastic contact with the first positive brush and the first negative brush respectively.

[0031] Optionally, the second positive brush and the second negative brush both include:

[0032] Second brush;

[0033] A brush support, one end of which is fixedly connected to the fixing seat and is used to be electrically connected to the power supply; the other end of which is connected to the second brush so as to be movable along the axial direction of the brush support;

[0034] A compression spring is sleeved on the brush support and located between the second brush and the fixing seat, and is used to apply an elastic force to the second brush toward the first positive brush or the first negative brush; the compression spring is electrically insulated from the fixing seat.

[0035] Optionally, the second brush sleeve is arranged on the brush support, and the other end of the brush support is provided with a limiting portion for preventing the second brush from escaping from the other end of the brush support.

[0036] Optionally, the gate valve device further comprises: a temperature detection element, the temperature detection element is arranged in the cavity, and is used to detect the temperature of the door panel assembly; the wiring of the temperature detection element extends out of the second end surface of the rotating shaft through the wiring channel;

[0037] The first brush structure further includes: a third brush, the third brush being fixedly connected to the connection cavity and electrically connected to the wiring of the temperature detection element;

[0038] The second brush structure further includes: a fourth brush, which is fixedly connected to the fixing seat and is used to be electrically connected to the controller. The fourth brush is extended along the rotation path of the third brush so as to keep in contact with each other when the shaft rotates.

[0039] Optionally, the third brush and the fourth brush are both cylindrical and opposite to each other; the third brush is coaxially arranged with the rotating shaft.

[0040] Optionally, the gate valve device also includes: two shaft sealing assemblies, both of which are sleeved on the rotating shaft and located outside the outer cavity, and are respectively fixedly connected to two cavity walls of the outer cavity through which the rotating shaft passes, and the shaft sealing assemblies are used to seal the gap between the rotating shaft and the cavity wall.

[0041] Optionally, the shaft sealing assembly comprises:

[0042] A fixed cavity, fixedly connected to the cavity wall, and the rotating shaft passes through the fixed cavity;

[0043] Two magnetic fluid bearings are located inside the fixed cavity and are sleeved on the rotating shaft at intervals to seal the gap between the rotating shaft and the cavity wall; the surfaces of the two magnetic fluid bearings facing each other and the inner circumferential surface of the fixed cavity and the outer circumferential surface of the rotating shaft facing each other together constitute a closed cooling space; the fixed cavity is provided with a first water inlet and a first water outlet for inputting and outputting cooling water into and out of the cooling space.

[0044] Optionally, the gate valve device further includes:

[0045] A first shaft cooling assembly, disposed at a first end of the rotating shaft, for cooling the rotating shaft;

[0046] The second shaft cooling assembly is sleeved on the rotating shaft at a position close to the second end of the rotating shaft and is used for cooling the rotating shaft.

[0047] Optionally, a first cooling channel is provided in the rotating shaft, one end of the first cooling channel is located at a first end surface of the rotating shaft, and the other end of the first cooling channel extends to a position close to the outer cavity and is a closed end;

[0048] The first shaft cooling assembly includes a joint component and a cooling pipeline, wherein the joint component is sealed and connected to the first end of the rotating shaft, a reflux channel is provided in the joint component, and the reflux channel is connected to the first cooling channel; a second water inlet and a second water outlet are provided on the joint component; the second water outlet is connected to the reflux channel;

[0049] One end of the cooling pipeline extends into the first cooling channel at a position close to the closed end and is communicated with the first cooling channel, and the other end of the cooling pipeline extends into the reflux channel and is communicated with the second water inlet.

[0050] Optionally, the second shaft cooling assembly includes a first clamp and a second clamp that are butt-jointed to form a closed loop, and the first clamp and the second clamp are fixedly connected by a fastener;

[0051] The first clamp and the second clamp are both provided with a second cooling channel, and the first clamp and the second clamp are both provided with a third water inlet and a third water outlet for inputting and outputting cooling water into the second cooling channel.

[0052] As another technical solution, the present invention also provides a semiconductor processing equipment, comprising a loading chamber, a heating chamber and a reaction chamber connected in sequence along the wafer conveying direction, wherein chamber gate valves are arranged between the loading chamber and the heating chamber, and between the heating chamber and the reaction chamber, for connecting or separating adjacent chambers; the reaction chamber adopts the above-mentioned reaction chamber provided by the present invention.

[0053] The present invention has the following beneficial effects:

[0054] The reaction chamber provided by the present invention can heat the interior of the chamber by arranging a heating element in the cavity of the door plate assembly of the gate valve device, so that the heating performance of the reaction chamber can be further enhanced on the basis of the original heating device of the reaction chamber, which can not only improve the heating rate in the chamber so that the wafer reaches a stable process temperature in a short time, but also improve the heating uniformity of the wafers on the multi-layer carrier when the wafers on the multi-layer carrier are processed at the same time, thereby improving the single batch output and the process parameters such as the film growth rate, film structure and film photoelectric properties, and ensuring the film quality of the wafer. Moreover, by arranging a wiring channel in the rotating shaft that is connected to the cavity in the door plate assembly, the positive and negative wiring of the heating element can be extended to the outside of the second end face of the rotating shaft through the wiring channel, so that the wiring does not occupy extra space. In addition, the positive and negative wiring of the heating element are electrically connected to the power supply by means of a moving contact assembly, and they remain in contact with each other when the shaft rotates. This can not only maintain the electrical connection between the two when the shaft rotates, but also prevent the positive and negative wiring of the heating element from being entangled during rotation, thereby improving the reliability and safety of the structure.

[0055] The semiconductor processing equipment provided by the present invention, by adopting the above-mentioned reaction chamber provided by the present invention, can not only improve the heating rate in the chamber so that the wafer reaches a stable process temperature in a short time, but also can improve the heating uniformity of the wafers on the multi-layer carrier when the wafers on the multi-layer carrier are processed at the same time, thereby both improving the single batch output and ensuring the wafer film formation quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 The semiconductor processing equipment provided by the embodiment of the present invention is a structural diagram of a PECVD equipment;

[0057] Figure 2 A front cross-sectional view of a reaction chamber provided in an embodiment of the present invention;

[0058] Figure 3 A top cross-sectional view of a reaction chamber provided in an embodiment of the present invention;

[0059] Figure 4 A side cross-sectional view of a reaction chamber provided in an embodiment of the present invention;

[0060] Figure 5 A front cross-sectional view of a door panel assembly used in an embodiment of the present invention;

[0061] Figure 6 A side cross-sectional view of a door panel assembly used in an embodiment of the present invention;

[0062] Figure 7A cross-sectional view of a first brush structure used in an embodiment of the present invention;

[0063] Figure 8 A cross-sectional view of a first brush structure and a second brush structure in a non-contact state used in an embodiment of the present invention;

[0064] Fig. 9 A three-dimensional diagram of a first brush structure and a second brush structure in a non-contact state used in an embodiment of the present invention;

[0065] Fig.10 A cross-sectional view of a shaft seal assembly and a first shaft cooling assembly located at a first end of a rotating shaft according to an embodiment of the present invention;

[0066] Fig.11 A cross-sectional view of a shaft sealing assembly and a second shaft cooling assembly located at a second end of a rotating shaft used in an embodiment of the present invention;

[0067] Fig.12 A front view of a second shaft cooling assembly used in an embodiment of the present invention. DETAILED DESCRIPTION

[0068] In order to enable those skilled in the art to better understand the technical solution of the present invention, the reaction chamber and semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0069] The reaction chamber provided in the embodiment of the present invention is applied to semiconductor processing equipment, taking the semiconductor processing equipment as a plate-type PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment as an example, Figure 1 As shown, the device includes a device along the wafer conveying direction (ie, Figure 1 The loading chamber 100, the heating chamber 200 and the reaction chamber 300 are connected in sequence (in the direction of the arrow in FIG. 1 ), wherein a chamber gate valve 500 is provided between the loading chamber 100 and the heating chamber 200, and between the heating chamber 200 and the reaction chamber 300, for connecting or isolating adjacent chambers. The wafer is generally carried and transported by a carrier 400, and the carrier 400 can be provided with multiple layers, and each layer of the carrier 400 can carry multiple wafers. In the process of the carrier 400 transporting the wafer, the carrier 400 first enters the loading chamber 100, and then the chamber gate valve 500 on the left side of the loading chamber 100 is closed, and the loading chamber 100 is evacuated; then, the carrier 400 enters the heating chamber 200 to heat the wafer to a constant process temperature; finally, the carrier 400 enters the reaction chamber 300, and a process is performed in the reaction chamber 300, such as a thin film deposition process for preparing an amorphous silicon thin film.

[0070] like Figure 2As shown, the reaction chamber 300 provided in the embodiment of the present invention comprises an outer chamber 1 and an inner chamber 2 disposed in the outer chamber 1, and a gate valve device 5 for opening or closing the transmission port of the inner chamber 2, wherein, for the reaction chamber of the PECVD equipment, the top and bottom of the inner chamber 2 are respectively provided with an upper heater and a lower heater (not shown in the figure), which are used to heat the inside of the chamber during the process to ensure that the wafer is maintained at a stable process temperature. Of course, the embodiment of the present invention has no particular restrictions on the structure and arrangement of the heating device of the reaction chamber.

[0071] like Figure 2 As shown, the gate valve device 5 is located outside the inner cavity 2. Optionally, the inner cavity 2 has two transmission ports, which are located on two opposite side walls of the inner cavity 2. Correspondingly, there are two gate valve devices 5, which are respectively located on the sides where the two transmission ports of the inner cavity 2 are located. Of course, in practical applications, the transmission port of the inner cavity 2 can also be one or other numbers, and the number of gate valve devices 5 can be consistent with the number of transmission ports, and they are arranged one-to-one.

[0072] like Figure 3 and Figure 4 As shown, the gate valve device 5 includes a rotating shaft 51, a driving device (not shown in the figure), a door plate assembly 52 and a dynamic contact assembly, wherein the rotating shaft 51 is rotatably arranged on the side where the transmission port of the inner cavity 2 is located, and the first end of the rotating shaft 51 (i.e. Figure 4 The left end of the Figure 4 The right end in the middle) passes through the outer cavity 1 and extends to the outside of the outer cavity 1; the driving device and the first end of the rotating shaft 51 (ie, Figure 4 The driving device is connected to the rotating shaft 51 at the left end thereof to drive the rotating shaft to rotate so that the door panel assembly 52 opens or closes the transmission port of the inner cavity 2. Specifically, the driving device and the rotating shaft 51 can be connected at position 54 to avoid the first cooling assembly 56 connected to the first end of the rotating shaft (described in detail later). Optionally, the driving device can drive the rotating shaft to rotate 90° in the forward or reverse direction, with the position where the door panel assembly 52 closes the transmission port of the inner cavity 2 as the initial position (i.e., Figure 4 For example, the driving device drives the rotating shaft 51 to rotate forward 90°, so that the door panel assembly 52 can rotate from the vertical initial position to the horizontal position above the transmission port, and the transmission port is opened; then, the driving device drives the rotating shaft 51 to rotate reversely 90°, so that the door panel assembly 52 can return from the horizontal position to the initial position, and the transmission port is closed. Of course, the embodiment of the present invention has no limitation on the angle of the driving device driving the rotating shaft 51 to rotate forward or reversely, as long as it can open or close the transmission port of the inner cavity 2 and ensure the normal transmission of the wafer. The driving device can be driven by a cylinder connecting rod, a motor, or a manual rocker, etc., and the embodiment of the present invention has no special limitation on this.

[0073] like Figure 5 and Figure 6 As shown, the door panel assembly 52 is fixedly connected to the rotating shaft 51, and the door panel assembly 52 has a cavity 52a, in which a heating element 7 is arranged for heating the interior of the inner cavity 2. Optionally, the heating element 7 is a heating wire, and is evenly distributed in the cavity 52a of the door panel assembly 52 to improve the heating uniformity. For example, the heating wire 7 is spirally wound along the circumference of the door panel assembly 52 from the center to the edge of the door panel assembly 52. ​​A wiring channel 511 is arranged in the rotating shaft 51, and the wiring channel 511 is connected to the cavity 52a. One end of the positive electrode wiring 71 and the negative electrode wiring 72 of the heating element 7 are electrically connected to the two ends of the heating wire respectively, and the other end is extended to the outside of the second end face of the rotating shaft 51 through the wiring channel 511. The wiring channel 511 is formed with an opening on the second end face of the rotating shaft 51, so that the positive electrode wiring 71 and the negative electrode wiring 72 of the heating element 7 can extend to the outside of the second end face of the rotating shaft 51. The moving contact assembly is connected to the second end of the rotating shaft 51, and is configured to electrically connect the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7 to a power supply (not shown in the figure) in a contact manner, and keep in contact with each other when the rotating shaft 51 rotates. The so-called electrical connection in a contact manner means that the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7 are in electrical contact with the power supply, and there is no rotation constraint between them.

[0074] By arranging a heating element 7 in the cavity 52a of the door plate assembly 52 of the gate valve device 5, the interior of the chamber can be heated, so that the heating performance of the reaction chamber can be further enhanced on the basis of the original heating device of the reaction chamber, which can not only increase the heating rate in the reaction chamber so that the wafer reaches a stable process temperature in a short time, but also Figure 2 and Figure 3As shown, in the case of simultaneously processing the wafers 4 on the multi-layer carrier 400, by arranging the heating element 7 in the cavity 52a of the door panel assembly 52, the heating uniformity of the wafers 4 on the multi-layer carrier 400 can be effectively improved, thereby increasing the single batch output, and improving the process parameters such as the film growth rate, the film structure and the photoelectric properties of the film, and ensuring the film quality of the wafer. In addition, by arranging a wiring channel 511 in the rotating shaft 51 that is connected to the cavity 52a in the door panel assembly 52, the positive electrode wiring 71 and the negative electrode wiring 72 of the heating element 7 can be extended to the outside of the second end face of the rotating shaft 51 through the wiring channel 511, so that the wiring does not occupy additional space. In addition, the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7 are electrically connected to the power supply by means of a dynamic contact assembly, and they maintain contact with each other when the shaft 51 rotates. This can not only maintain the electrical connection between the two when the shaft 51 rotates, but also prevent the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7 from being entangled during rotation, thereby improving the reliability and safety of the structure.

[0075] In some optional embodiments, such as Figure 6 As shown, the door panel assembly 52 includes: a first door panel 521, a second door panel 522 and a third door panel 523, wherein the first door panel 521 is adjacent to the transmission port when in a closed state, and a surface of the first door panel 521 that is away from the transmission port is provided with an accommodating groove; the second door panel 522 is located on the side of the first door panel 521 that is away from the transmission port, and is fixedly connected to the first door panel 521, and forms a cavity 52a with the accommodating groove; the third door panel 523 is located on the side of the second door panel 522 that is away from the first door panel 521, and is fixedly connected to the first door panel 521 and / or the second door panel 522, and is fixedly connected to the rotating shaft 51. By adopting the first door panel 521 and the second door panel 522 to butt joint to form the cavity 52a, it is convenient for the installation and loading and unloading of the heating element 7.

[0076] In some optional embodiments, the surface of the second door panel 522 exposed to the accommodating groove (ie, the cavity 52a) is a light surface capable of reflecting heat. The light surface can reflect part of the heat back, thereby reducing heat loss and further improving heating efficiency.

[0077] In some optional embodiments, such as Figures 7 to 9As shown, the moving contact assembly includes a first brush structure 55a and a second brush structure 55b, wherein the first brush structure 55a is connected to the second end of the rotating shaft 51 and is electrically connected to the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7; the second brush structure 55b is used to be electrically connected to the power supply, and the second brush structure 55b is fixed when the rotating shaft 51 rotates, and is electrically in contact with the first brush structure 55a; the first brush structure 55a and the second brush structure 55b can keep in contact with each other when the rotating shaft 51 rotates. With the help of the first brush structure 55a and the second brush structure 55b, the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7 can be kept electrically connected to the power supply when the rotating shaft 51 rotates, and the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7 can be prevented from being entangled during the rotation process, thereby improving the reliability and safety of the structure.

[0078] In some optional embodiments, such as Figure 7 As shown, the first brush structure 55a includes a connecting cavity 551, a first positive brush 552 and a first negative brush 553, wherein the connecting cavity 551 is fixedly connected to the second end of the rotating shaft 51, and the interior 551c of the connecting cavity 551 is connected to the wiring channel 511; the first positive brush 552 and the first negative brush 553 are fixedly connected to the connecting cavity 551, and are electrically connected to the positive wiring 71 and the negative wiring 72 of the heating element 7 respectively. With the help of the connecting cavity 551, the positive wiring 71 and the negative wiring 72 of the heating element 7 can be accommodated therein, and the sealing of the wiring channel 511 can be ensured, and the first positive brush 552 and the first negative brush 553 can be supported and fixed, so as to realize the electrical connection between the two and the positive wiring 71 and the negative wiring 72 of the heating element 7 respectively. The first brush structure 55a rotates synchronously with the rotating shaft 51.

[0079] In some optional embodiments, such as Figure 8As shown, the first positive brush 552 and the first negative brush 553 both include a first brush 552a, a first brush support 552b and a brush seal, wherein one end of the first brush support 552b is fixedly connected to the first brush 552a, and the other end of the first brush support 552b passes through the connecting cavity 551 and extends to the interior 551c of the connecting cavity 551, and is electrically connected to the positive electrode connection 71 or the negative electrode connection 72 of the heating element 7; the brush seal is sleeved on the first brush support 552b to seal the gap between the first brush support 552b and the connecting cavity 551, and the brush seal is electrically insulated from the first brush 552a, for example, a first insulating sleeve 552e is provided between the brush seal and the first brush 552a to electrically insulate the two. With the help of the first brush support 552b, the first brush 552a can be fixed to the connection cavity 551, and the first brush 552a can be electrically connected to the positive electrode connection 71 or the negative electrode connection 72 of the heating element 7. With the help of the brush seal, the sealing of the interior 551c of the connection cavity 551 can be ensured. Optionally, the first brush 552a is sleeved on the first brush support 552b, and a locking nut 552f is provided at the end of the first brush support 552b, which is used to limit the first brush 552a between the brush seal 552c and the locking nut 552f, so as to prevent the first brush 552a from loosening during the rotation and friction process, or even coming off the first brush support 552b. The locking nut 552f is threadedly matched with the external thread on the first brush support 552b. In addition, optionally, the brush seal includes a sealing body 552c sleeved on the first brush support 552b, and a sealing sleeve 552d sleeved on the sealing body 552c, the sealing sleeve 552d is located at the connection between the sealing body 552c and the connecting cavity 551, and is used to seal the gap between the two.

[0080] In some optional embodiments, such as Figure 7 and Fig. 9 As shown, the connecting cavity 551 comprises a cavity body 551a and a connecting flange 551b, wherein the cavity body 551a has an opening at one end away from the rotating shaft 51; the connecting flange 551b closes the opening and is fixedly connected to the cavity body 551a, for example, by a plurality of bolts; a sealing ring 551d is provided between the connecting flange 551b and the cavity body 551a for sealing the opening, as shown in FIG. Fig. 9 The other end of the first brush support 552b is set through the connecting flange 551b. The structure of the connecting cavity 551 facilitates the installation and removal of the positive electrode connection 71 or the negative electrode connection 72 of the heating element 7 and the first brush structure 55a.

[0081] In some optional embodiments, such as Figure 8As shown, the second brush structure 55b remains stationary when the shaft 51 rotates. Specifically, the second brush structure 55b includes a fixed seat 550, a second positive brush 554 and a second negative brush 555, wherein the fixed seat 550 remains stationary when the shaft 51 rotates, and the fixed seat 550 can be fixed on any frame that remains stationary. The second positive brush 554 and the second negative brush 555 are both fixedly connected to the fixed seat 550, and are used to electrically connect to the positive and negative poles of the power supply, respectively; the second positive brush 554 and the second negative brush 555 are electrically in contact with the first positive brush 552 and the first negative brush 553, respectively, that is, they are electrically connected in a contact manner. And, as Fig. 9 As shown, the second positive brush 554 and the second negative brush 555 are both arc-shaped and extend along the rotation paths of the first positive brush 552 and the first negative brush 553 respectively so as to keep in contact with each other when the rotating shaft 51 rotates. Since the first positive brush 552 and the first negative brush 553 will rotate with the rotating shaft 51, the two will be displaced, and the displacement path is an arc path. Correspondingly, by making the second positive brush 554 and the second negative brush 555 both arc-shaped and extending along the rotation paths of the first positive brush 552 and the first negative brush 553 respectively, the first positive brush 552 and the first negative brush 553 can be respectively in contact with the second positive brush 554 and the second negative brush 555 when moving on their rotation paths, thereby ensuring that the first positive brush 552 and the first negative brush 553 respectively maintain contact with the second positive brush 554 and the second negative brush 555 when the rotating shaft 51 rotates, thereby achieving the electrical connection between the positive terminal 71 and the negative terminal 72 of the heating element 7 and the power supply when the rotating shaft 51 rotates. Optionally, the first positive brush 552 and the first negative brush 553 are cylindrical, but the embodiment of the present invention is not limited thereto. Fig. 9 As shown, optionally, the terminal and end of the rotation path of the first positive brush 552 and the first negative brush 553 correspond to the two ends of the arc of the arc-shaped second positive brush 554 and the second negative brush 555. Of course, the arc length of the second positive brush 554 and the second negative brush 555 can also be greater than the rotation path length of the first positive brush 552 and the first negative brush 553.

[0082] In some optional embodiments, the second positive brush 554 and the second negative brush 555 are in elastic contact with the first positive brush 552 and the first negative brush 553, respectively. In this way, the contacting brushes can still maintain contact under the action of elastic force when they become thin due to wear. Figure 8As shown, the second positive brush 554 and the second negative brush 555 both include a second brush 554a, a brush support 554c and a compression spring 554b, wherein one end of the brush support 554c is fixedly connected to the fixing seat 550 and is used to be electrically connected to the power supply; the other end of the brush support 554c is connected to the second brush 554a so as to be movable along the axial direction of the brush support 554c; the compression spring 554b is sleeved on the brush support 554c and is located between the second brush 554a and the fixing seat 550, and is used to apply an elastic force to the second brush 554a toward the first positive brush 552 or the first negative brush 553; the compression spring 554b is electrically insulated from the fixing seat 550, for example, a second insulating sleeve 554d is provided between the compression spring 554b and the fixing seat 550, for electrically insulating the two. Optionally, the second brush 554a is sleeved on the brush support 554c, and the other end of the brush support 554c is provided with a limiting portion 554e to prevent the second brush 554a from loosening during the rotation and friction process, or even from falling out from the other end of the brush support 554c. The limiting portion 554e is, for example, a locking nut, which cooperates with the external thread on the brush support 554c. It is easy to understand that during installation, it should be ensured that the first positive brush 552 and the first negative brush 553 are in contact with the second positive brush 554 and the second negative brush 555 respectively, and are in a position where the above-mentioned compression spring 554b is in a compressed state, and a certain distance is reserved between the second brush 554a and the limiting portion 554e, so that the compression spring 554b can always apply an elastic force toward the first positive brush 552 or the first negative brush 553 to the second brush 554a. The reserved distance between the second brush 554a and the limiting portion 554e allows the second brush 554a to move toward the first brush 552a when the contacting brushes are worn and become thinner, so as to ensure that the second brush 554a can contact the first brush 552a.

[0083] In some optional embodiments, such as Figure 5 As shown, the gate valve device 5 further includes a temperature detection element 8, which is disposed in the cavity 52a and is used to detect the temperature of the door panel assembly 52; the wiring 81 of the temperature detection element 8 extends out of the second end surface of the rotating shaft 51 through the wiring channel 511. In this case, Figures 7 to 9 As shown, the first brush structure 55a also includes a third brush 556 ( Figure 7The third brush 556 is fixedly connected to the connecting cavity 551 and electrically connected to the connection 81 of the temperature detection element 8. The structure of the third brush 556 is the same as that of the first brush 552a. The second brush structure 55b also includes a fourth brush 557, which is fixedly connected to the fixing seat 550 and is used to be electrically connected to the controller (used to supply power and communicate with the temperature detection element 8, not shown in the figure). The fourth brush 557 is extended along the rotation path of the third brush 556 so as to be able to maintain contact with each other when the rotating shaft 51 rotates. Optionally, the third brush 556 and the fourth brush 557 are both cylindrical and opposite to each other; the third brush 556 is coaxially arranged with the rotating shaft 51. In this way, the third brush 556 is equivalent to self-rotation, so that the third brush 556 and the fourth brush 557 can both be cylindrical.

[0084] In some optional embodiments, such as Figure 4 , Fig.10 and Fig.11 As shown, the gate valve device 5 also includes two shaft sealing assemblies 53, both of which are sleeved on the rotating shaft 51 and are located outside the outer cavity 1, and are respectively fixedly connected to two cavity walls (such as two side walls of the outer cavity 1) penetrated by the rotating shaft 51 of the outer cavity 1. The shaft sealing assembly 53 is used to seal the gap between the rotating shaft 51 and the cavity wall, thereby ensuring the sealing of the interior of the outer cavity 1 and preventing external gas from entering the interior of the outer cavity 1. Optionally, as Fig.10 As shown, the shaft sealing assembly 53 includes a fixed cavity 531 and two magnetic fluid bearings 532, wherein the fixed cavity 531 is fixedly connected to the cavity wall of the cavity 1, and the rotating shaft 51 passes through the fixed cavity 531; the two magnetic fluid bearings 532 are located inside the fixed cavity 531, and are sleeved on the rotating shaft 51 at intervals from each other, for sealing the gap between the rotating shaft 51 and the cavity wall; the surfaces of the two magnetic fluid bearings 532 facing each other and the surfaces of the inner circumference of the fixed cavity 531 and the outer circumference of the rotating shaft 51 facing each other together constitute a closed cooling space 53a; the fixed cavity 531 is provided with a first water inlet 531a and a first water outlet 531b for inputting and outputting cooling water into the cooling space 53a. By circulating cooling water in the cooling space 53a through the first water inlet 531a and the first water outlet 531b, not only can the magnetic fluid in the two magnetic fluid bearings 532 be cooled, thereby increasing the service life of the magnetic fluid, but the rotating shaft 51 can also be cooled to indirectly cool the wiring inside the rotating shaft 51, thereby increasing the service life of the wiring.

[0085] In some optional embodiments, such as Figure 4As shown, the gate valve device 5 also includes a first shaft cooling component 56 and a second shaft cooling component 57, wherein the first shaft cooling component 56 is disposed at the first end of the rotating shaft 51 for cooling the rotating shaft 51; the second shaft cooling component 57 is sleeved on the rotating shaft 51 at a position close to the second end of the rotating shaft 51 for cooling the rotating shaft 51. With the aid of the first shaft cooling component 56 and the second shaft cooling component 57, the wiring in the rotating shaft 51 can be indirectly cooled, thereby increasing the service life of the wiring. The structure of the first cooling component 56 can be various, for example, Fig.10 As shown, a first cooling channel 512 is provided in the rotating shaft 51, one end of the first cooling channel 512 is located at the first end face of the rotating shaft 51, and the other end of the first cooling channel 512 extends to a position close to the outer cavity 1 and is a closed end; the first shaft cooling assembly 56 includes a joint component 561 and a cooling pipeline 562, wherein the joint component 561 is sealed and connected to the first end of the rotating shaft 51, and a return channel 561a is provided in the joint component 561, and the return channel 561a is communicated with the first cooling channel 512; a second water inlet 561b and a second water outlet 561c are provided on the joint component 561; the second water outlet 561c is communicated with the return channel 561a; one end of the cooling pipeline 562 extends into a position close to the closed end of the first cooling channel 512 and is communicated with the first cooling channel 512, and the other end of the cooling pipeline 562 extends into the return channel 561a and is communicated with the second water inlet 561b. By circulating cooling water in the first cooling channel 512 and the return channel 561a through the second water inlet 561b and the second water outlet 561c, the rotating shaft 51 can be cooled, thereby indirectly cooling the wiring inside the rotating shaft 51 to increase the service life of the wiring.

[0086] The second cooling assembly 57 may have various structures, for example: Fig.11 and Fig.12 As shown, the second shaft cooling assembly 57 includes a first clamp 571 and a second clamp 572 that are butt-jointed to form a closed loop, and the first clamp 571 and the second clamp 572 are fixedly connected by fasteners; a second cooling channel 573 is provided in each of the first clamp 571 and the second clamp 572, and a third water inlet 574 and a third water outlet 575 are provided on each of the first clamp 571 and the second clamp 572 for inputting and outputting cooling water into and out of the second cooling channel 573. By circulating cooling water in the second cooling channel 573 through the third water inlet 574 and the third water outlet 575, the rotating shaft 51 can be cooled, thereby indirectly cooling the wiring in the rotating shaft 51 to increase the service life of the wiring.

[0087] In summary, the reaction chamber provided by the embodiment of the present invention can heat the interior of the chamber by arranging a heating element in the cavity of the door plate assembly 52 of the gate valve device 5, so that the heating performance of the reaction chamber can be further enhanced on the basis of the original heating device of the reaction chamber, which can not only improve the heating rate in the reaction chamber so that the wafer reaches a stable process temperature in a short time, but also improve the heating uniformity of the wafers on the multi-layer carrier when the wafers on the multi-layer carrier are processed at the same time, thereby improving the single batch output and the process parameters such as the film growth rate, the film structure and the photoelectric properties of the film, so as to ensure the film quality of the wafer. Moreover, by arranging a wiring channel 511 in the rotating shaft 51 that is connected to the cavity in the door plate assembly 52, the positive electrode wiring 71 and the negative electrode wiring 72 of the heating element 7 can be extended to the outside of the second end face of the rotating shaft 51 through the wiring channel 511, so that the wiring does not occupy extra space. In addition, the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7 are electrically connected to the power supply by means of a dynamic contact assembly, and they maintain contact with each other when the shaft 51 rotates. This can not only maintain the electrical connection between the two when the shaft 51 rotates, but also prevent the positive electrode connection 71 and the negative electrode connection 72 of the heating element 7 from being entangled during rotation, thereby improving the reliability and safety of the structure.

[0088] As another technical solution, an embodiment of the present invention further provides a semiconductor processing device, taking the semiconductor processing device as a plate-type PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) device as an example, Figure 1 As shown, the device includes a device along the wafer conveying direction (ie, Figure 1 The loading chamber 100, the heating chamber 200 and the reaction chamber 300 are connected in sequence (in the direction of the arrow in FIG. 1 ), wherein a chamber gate valve 500 is provided between the loading chamber 100 and the heating chamber 200, and between the heating chamber 200 and the reaction chamber 300, for connecting or isolating adjacent chambers. The reaction chamber 300 adopts the reaction chamber provided in the embodiment of the present invention.

[0089] The semiconductor processing equipment provided by the embodiment of the present invention, by adopting the above-mentioned reaction chamber provided by the embodiment of the present invention, can not only improve the heating rate in the reaction chamber so that the wafer reaches a stable process temperature in a short time, but also can improve the heating uniformity of the wafers on the multi-layer carrier when the wafers on the multi-layer carrier are processed at the same time, thereby both improving the single batch output and ensuring the wafer film formation quality.

[0090] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A reaction chamber, applied to semiconductor processing equipment, characterized in that: The invention comprises an outer cavity, an inner cavity arranged in the outer cavity, and a gate valve device for opening or closing a transmission port of the inner cavity, wherein the gate valve device comprises: A rotating shaft is rotatably disposed on a side of the inner cavity where the transmission port is located, and a first end and a second end of the rotating shaft pass through the outer cavity and extend to the outside of the outer cavity; A driving device connected to the first end of the rotating shaft, and used to drive the rotating shaft to rotate so that the door panel assembly opens or closes the transmission port of the inner cavity; The door panel assembly is fixedly connected to the rotating shaft and has a cavity, in which a heating element is arranged for heating the interior of the inner cavity; a wiring channel is arranged in the rotating shaft, the wiring channel is communicated with the cavity, and the positive and negative wiring of the heating element extend out of the second end surface of the rotating shaft through the wiring channel; A moving contact assembly is connected to the second end of the rotating shaft. The moving contact assembly is configured to electrically connect the positive and negative wiring of the heating element to a power supply in a contact manner, and keep in contact with each other when the rotating shaft rotates.

2. The reaction chamber according to claim 1, characterized in that: The door panel assembly comprises: A first door panel, which is adjacent to the transmission port when in a closed state, and a surface of the first door panel facing away from the transmission port is provided with an accommodating groove; A second door panel, located on a side of the first door panel away from the transmission port, and fixedly connected to the first door panel, and forming the cavity with the accommodating groove; The third door panel is located on the side of the second door panel away from the first door panel, and is fixedly connected to the first door panel and / or the second door panel, and is fixedly connected to the rotating shaft.

3. The reaction chamber according to claim 2, characterized in that: The surface of the second door panel exposed to the accommodating groove is a light surface capable of reflecting heat.

4. The reaction chamber according to claim 1, characterized in that: The dynamic contact assembly comprises: a first brush structure connected to the second end of the rotating shaft and electrically connected to the positive electrode connection and the negative electrode connection of the heating element; The second brush structure is used to be electrically connected to a power supply. The second brush structure is fixed when the shaft rotates and is in electrical contact with the first brush structure. The first brush structure and the second brush structure can maintain contact with each other when the shaft rotates.

5. The reaction chamber according to claim 4, characterized in that: The first brush structure comprises: A connecting cavity, fixedly connected to the second end of the rotating shaft, and the interior of the connecting cavity is in communication with the wiring channel; The first positive brush and the first negative brush are fixedly connected to the connection cavity and are electrically connected to the positive electrode connection and the negative electrode connection of the heating element respectively.

6. The reaction chamber according to claim 5, characterized in that: The first positive brush and the first negative brush each include: First brush; A first brush support, one end of which is fixedly connected to the first brush, and the other end of which passes through the connection cavity and extends into the interior of the connection cavity and is electrically connected to the positive electrode connection or the negative electrode connection of the heating element; A brush seal is sleeved on the first brush support and is used to seal the gap between the first brush support and the connecting cavity, and the brush seal is electrically insulated from the first brush.

7. The reaction chamber according to claim 6, characterized in that: The connecting cavity comprises a cavity body and a connecting flange, wherein the cavity body has an opening at one end away from the rotating shaft; the connecting flange closes the opening and is fixedly connected to the cavity body; a sealing ring is provided between the connecting flange and the cavity body for sealing the opening; The other end of the first brush support is disposed through the connecting flange.

8. The reaction chamber according to claim 5, characterized in that: The second brush structure comprises: A fixed seat, which is fixed when the rotating shaft rotates; The second positive brush and the second negative brush are fixedly connected to the fixing seat and are used to be electrically connected to the power supply; the second positive brush and the second negative brush are respectively electrically contacted with the first positive brush and the first negative brush, and the second positive brush and the second negative brush are both arc-shaped and extend along the rotation paths of the first positive brush and the first negative brush respectively, so as to maintain contact with each other when the shaft rotates.

9. The reaction chamber according to claim 8, characterized in that: The second positive brush and the second negative brush are in elastic contact with the first positive brush and the first negative brush, respectively.

10. The reaction chamber according to claim 9, characterized in that: The second positive brush and the second negative brush each include: Second brush; A brush support, one end of which is fixedly connected to the fixing seat and is used to be electrically connected to the power supply; the other end of which is connected to the second brush so as to be movable along the axial direction of the brush support; A compression spring is sleeved on the brush support and located between the second brush and the fixing seat, and is used to apply an elastic force to the second brush toward the first positive brush or the first negative brush; the compression spring is electrically insulated from the fixing seat.

11. The reaction chamber according to claim 10, characterized in that: The second brush sleeve is arranged on the brush support, and the other end of the brush support is provided with a limiting portion for preventing the second brush from escaping from the other end of the brush support.

12. The reaction chamber according to claim 8, characterized in that: The gate valve device further comprises: a temperature detection element, which is arranged in the cavity and is used to detect the temperature of the door panel assembly; the wiring of the temperature detection element extends out of the second end surface of the rotating shaft through the wiring channel; The first brush structure further includes: a third brush, the third brush being fixedly connected to the connection cavity and electrically connected to the wiring of the temperature detection element; The second brush structure further includes: a fourth brush, which is fixedly connected to the fixing seat and is used to be electrically connected to the controller. The fourth brush is extended along the rotation path of the third brush so as to keep in contact with each other when the shaft rotates.

13. The reaction chamber according to claim 12, characterized in that: The third brush and the fourth brush are both cylindrical and opposite to each other; the third brush is coaxially arranged with the rotating shaft.

14. The reaction chamber according to claim 1, characterized in that: The gate valve device also includes: two shaft sealing assemblies, both of which are sleeved on the rotating shaft and located outside the outer cavity, and are respectively fixedly connected to two cavity walls of the outer cavity through which the rotating shaft passes, and the shaft sealing assemblies are used to seal the gap between the rotating shaft and the cavity wall.

15. The reaction chamber according to claim 14, characterized in that: The shaft seal assembly comprises: A fixed cavity, fixedly connected to the cavity wall, and the rotating shaft passes through the fixed cavity; Two magnetic fluid bearings are located inside the fixed cavity and are sleeved on the rotating shaft at intervals to seal the gap between the rotating shaft and the cavity wall; the surfaces of the two magnetic fluid bearings facing each other and the inner circumferential surface of the fixed cavity and the outer circumferential surface of the rotating shaft facing each other together constitute a closed cooling space; the fixed cavity is provided with a first water inlet and a first water outlet for inputting and outputting cooling water into and out of the cooling space.

16. The reaction chamber according to claim 1, characterized in that: The gate valve device also includes: A first shaft cooling assembly, disposed at the first end of the rotating shaft, for cooling the rotating shaft; The second shaft cooling assembly is sleeved on the rotating shaft at a position close to the second end of the rotating shaft and is used for cooling the rotating shaft.

17. The reaction chamber according to claim 16, characterized in that: A first cooling channel is provided in the rotating shaft, one end of the first cooling channel is located at a first end surface of the rotating shaft, and the other end of the first cooling channel extends to a position close to the outer cavity and is a closed end; The first shaft cooling assembly includes a joint component and a cooling pipeline, wherein the joint component is sealed and connected to the first end of the rotating shaft, a reflux channel is provided in the joint component, and the reflux channel is connected to the first cooling channel; a second water inlet and a second water outlet are provided on the joint component; the second water outlet is connected to the reflux channel; One end of the cooling pipeline extends into the first cooling channel at a position close to the closed end and is communicated with the first cooling channel, and the other end of the cooling pipeline extends into the reflux channel and is communicated with the second water inlet.

18. The reaction chamber according to claim 16, characterized in that: The second shaft cooling assembly comprises a first clamp and a second clamp that are butted together to form a closed loop, and the first clamp and the second clamp are fixedly connected by a fastener; The first clamp and the second clamp are both provided with a second cooling channel, and the first clamp and the second clamp are both provided with a third water inlet and a third water outlet for inputting and outputting cooling water into the second cooling channel.

19. A semiconductor processing device, comprising a loading chamber, a heating chamber and a reaction chamber connected in sequence along a wafer conveying direction, wherein: A chamber gate valve is provided between the loading chamber and the heating chamber, and between the heating chamber and the reaction chamber, for connecting or isolating adjacent chambers; it is characterized in that the reaction chamber adopts the reaction chamber described in any one of claims 1-18.

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