Semiconductor process chamber and semiconductor process equipment

Abstract

The utility model discloses a semiconductor process chamber and semiconductor process equipment, and belongs to the technical field of semiconductors. The semiconductor process chamber comprises a chamber body, a rotating plate and a plurality of heating elements, the rotating plate is rotatably arranged in the chamber body, a base for bearing a wafer is arranged in the chamber body, the base is opposite to the rotating plate, and the plurality of heating elements are arranged on the rotating plate at intervals to heat the wafer. The semiconductor process equipment comprises the semiconductor process chamber, and the semiconductor process chamber is a semiconductor degassing chamber. Thus, by means of the rotating process of the rotating plate, the heating element can heat different areas of the wafer, the uniformity of the surface temperature of the wafer is improved, and therefore the heating efficiency and the heating effect are improved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a semiconductor process chamber and semiconductor process equipment. Background Technology

[0002] In the field of semiconductor technology, wafers are typically deposited in a vacuum environment. Before this, unstable nuclides need to be released by high-temperature heating, ionized and discharged to ensure the cleanliness of the wafer surface and the stability of subsequent processes.

[0003] In related technologies, semiconductor process equipment includes a chamber body and multiple heating lamps disposed on the top of the chamber body. The heating lamps are located directly above the wafer and are used to heat the wafer located inside the chamber body. However, the positions of each heating lamp are fixed, and each heating lamp can only heat a limited area of ​​the wafer at a fixed position, resulting in uneven heating of the wafer, reduced heating efficiency, and adverse effects on subsequent process results. Utility Model Content

[0004] The purpose of this application is to provide a semiconductor process chamber and semiconductor process equipment that can solve the problem of low heating efficiency in semiconductor process equipment in related technologies.

[0005] In a first aspect, embodiments of this application provide a semiconductor process chamber, including a chamber body, a rotating plate, and a plurality of heating elements, wherein:

[0006] The rotating plate is rotatably disposed within the chamber body, and the chamber body is provided with a base for supporting the wafer. The base is opposite to the rotating plate, and a plurality of heating elements are spaced apart on the rotating plate to heat the wafer.

[0007] Secondly, embodiments of this application also provide a semiconductor process apparatus, including the aforementioned semiconductor process chamber, wherein the semiconductor process chamber is a semiconductor degassing chamber.

[0008] In this embodiment, as the rotating plate rotates relative to the chamber body, it drives each heating element to rotate together, thereby allowing the heating elements to heat different areas of the wafer in the circumferential direction of the rotating plate. Therefore, by relying on the rotation of the rotating plate, the heating position of the heating elements can be changed, allowing the heating elements to heat different areas of the wafer, improving the uniformity of the wafer surface temperature, and thus improving heating efficiency and heating effect. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the internal structure of the semiconductor process chamber disclosed in the embodiments of this application;

[0010] Figure 2This is a top view of the rotating plate and its components disclosed in the embodiments of this application;

[0011] Figure 3 This is a partial structural schematic diagram of the rotating plate disclosed in the embodiments of this application;

[0012] Figure 4 This is a schematic diagram of the structure of the base and temperature sensing element disclosed in the embodiments of this application;

[0013] Figure 5 This is a communication diagram of the control device, temperature detection element, linear drive mechanism, and rotary drive mechanism disclosed in the embodiments of this application.

[0014] Explanation of reference numerals in the attached figures:

[0015] 100 - Chamber body, 110 - Cavity, 120 - Top cover

[0016] 200 - Rotating plate, a - Rotation axis

[0017] 300 - Heating element, 310 - First heating element, 320 - Second heating element

[0018] 400 - Linear drive mechanism, 410 - Second drive source, 411 - Second driver, 420 - Lead screw, 430 - Moving part, 431 - Slider, 432 - Nut

[0019] 500 - Rotary drive mechanism, 510 - First drive source, 511 - First driver, 520 - Connecting rod

[0020] 600 - Temperature sensing element, 610 - Edge sensing element, 620 - Middle sensing element, 630 - Center sensing element

[0021] 700-base,

[0022] 800-Guide Structure

[0023] 900 - Control device. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0025] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0026] The semiconductor process chamber and semiconductor process equipment provided in this application will be described in detail below with reference to the accompanying drawings and through specific embodiments and application scenarios.

[0027] Please refer to Figure 1-Figure 5 The semiconductor process chamber disclosed in this application includes a chamber body 100, a rotating plate 200, and a plurality of heating elements 300. The chamber body 100 serves as the mounting base for the rotating plate 200, and the rotating plate 200 serves as the mounting mechanism for the plurality of heating elements 300.

[0028] like Figure 1 As shown, the rotating plate 200 is rotatably disposed within the chamber body 100. Optionally, the chamber body 100 includes a cavity 110 and a top cover 120, wherein the upper end of the cavity 110 has an opening, and the top cover 120 can close the opening. The rotating plate 200 is rotatably disposed on the top cover 120. Further optionally, the rotating plate 200 is connected to the top cover 120 via a rotating shaft, one end of which is connected to the center of the rotating plate 200. The top cover 120 has a shaft hole, and the other end of the rotating shaft passes through the shaft hole. The rotating shaft and the shaft hole are rotatably engaged, and the axis of the rotating shaft is collinear with the rotation axis a of the rotating plate 200. Of course, the rotating plate 200 can also be rotatably disposed in other positions of the chamber body 100 other than the top cover 120.

[0029] The chamber body 100 is provided with a base 700 for supporting the wafer. Optionally, the base 700 is disposed within the cavity 110. The base 700 is opposite to the rotating plate 200, that is, the rotating plate 200 is located above the base 700. Multiple heating elements 300 are spaced apart on the rotating plate 200. Thus, the heating elements 300 and the wafer placed on the base 700 are vertically opposite each other, and the heating elements 300 can heat the wafer when they are working. Optionally, the heating elements 300 can be, but are not limited to, heating lamps, which can directly irradiate the wafer to heat it. Thus, as the rotating plate 200 rotates relative to the chamber body 100, the rotating plate 200 drives each heating element 300 to rotate together, thereby allowing the heating elements 300 to heat different areas of the wafer in the circumference of the rotating plate 200.

[0030] It should be noted that the rotation axis a of the rotating plate 200 is collinear with the axis of the wafer, thereby ensuring that the heating element 300 heats different areas of the wafer in the circumferential direction during rotation.

[0031] In this embodiment, the heating position of the heating element 300 can be changed by the rotation process of the rotating plate 200, so that the heating element 300 heats various areas of the wafer, improves the uniformity of the wafer surface temperature, and thus improves the heating efficiency and heating effect.

[0032] In one optional embodiment, each heating element 300 is fixedly connected to the rotating plate 200. Alternatively, each heating element 300 is fixedly connected to the rotating plate 200 by welding, bonding, or other methods.

[0033] In another embodiment, at least one of the plurality of heating elements 300 is movably disposed on the rotating plate 200 along a first direction, which intersects the direction of the rotation axis a of the rotating plate 200. Optionally, the first direction may be perpendicular to the direction of the rotation axis a of the rotating plate 200, that is, the first direction is the radial direction of the rotating plate 200; or, the first direction may intersect the direction of the rotation axis a of the rotating plate 200 but not be perpendicular to it.

[0034] Optionally, the heating element 300 and the rotating plate 200 can be slidably connected by a matching slide rail and slider, or by other structures, so that the heating element 300 can move relative to the rotating plate 200.

[0035] In this embodiment, at least one of the multiple heating elements 300 can be displaced radially in the rotating plate 200, thereby allowing the heating element 300 to heat different areas of the wafer radially in the rotating plate 200. Thus, the combination of the rotation process of the rotating plate 200 and the movement process of the heating element 300 expands the range of heating position variation of the heating element 300, further improving the uniformity of the wafer surface temperature, and contributing to further improvements in heating efficiency and heating effect.

[0036] Optionally, the first direction is not perpendicular to the rotation axis a of the rotating plate 200; or, the first direction is perpendicular to the rotation axis a of the rotating plate 200. Compared with the previous embodiment, in the latter embodiment, the linear drive mechanism 400 drives the heating element 300 to move directly along the radial direction of the rotating plate 200. Under the same driving distance, the heating element 300 in the latter embodiment has a larger effective displacement in the radial direction of the rotating plate 200, which is more beneficial for the heating element 300 to heat different regions of the wafer in the radial direction.

[0037] In one optional embodiment, the rotating plate 200 can drive each heating element 300 to rotate at a uniform speed, ensuring the heating uniformity of different regions of the wafer in its circumferential direction; at the same time, the heating elements 300 reciprocate along a first direction, ensuring the heating uniformity of different regions of the wafer in its radial direction. That is to say, the heating elements 300 can only perform regular rotational and linear motion, thereby uniformly heating all regions of the wafer.

[0038] In another embodiment, the semiconductor process chamber further includes at least two temperature sensing elements 600. Each temperature sensing element 600 can be a temperature sensor or other element capable of detecting temperature. The temperature sensing elements 600 are disposed on the base 700 to detect the temperature of the wafer placed on the base 700. The at least two temperature sensing elements 600 include a first temperature sensing element and a second temperature sensing element. The first temperature sensing element is disposed in a first region of the base 700, and the second temperature sensing element is disposed in a second region of the base 700 to detect the temperature of the second region.

[0039] If the temperature difference between the first region and the second region is greater than the first temperature difference, it indicates that the temperature of the first region or the second region is low and needs to be heated. At this time, the rotating plate 200 can drive each heating element 300 to rotate and the heating element 300 can move relative to the base 700 along the first direction so that the heating element 300 is opposite to the lower temperature area in the first region and the second region. That is, the heating element 300 moves to the top of the lower temperature area in the first region and the second region, and the heating element 300 heats the area, which is conducive to the rapid temperature rise of the area and improves the overall uniformity of the wafer.

[0040] It should be noted that the first temperature difference is not a fixed value; users can set the value of the first temperature difference as needed.

[0041] Optionally, such as Figure 4 As shown, there are multiple temperature sensing elements 600, including an edge sensing element 610, a middle sensing element 620, and a center sensing element 630. The edge sensing element 610 is located at the edge region of the base 700 to detect the temperature of the edge region of the wafer. The center sensing element 630 is located at the center of the base 700 to detect the temperature of the center region of the wafer. The middle sensing element 620 is located between the edge sensing element 610 and the center sensing element 630 to detect the temperature of the center region of the wafer. The first temperature sensing element and the second temperature sensing element can be any two of the edge sensing element 610, the middle sensing element 620, and the center sensing element 630. Further optionally, there can be at least two edge sensing elements 610 and at least two middle sensing elements 620.

[0042] In this embodiment, by relying on at least two temperature sensing elements 600, the temperature of different areas of the wafer can be detected, and the heating element 300 can be moved to a position relative to the area with a lower temperature, so as to perform targeted heating of the wafer and improve the heating uniformity of the wafer.

[0043] In an optional embodiment, a plurality of temperature sensing elements 600 are arranged at intervals in the radial direction of the base 700. Optionally, edge sensing elements 610, middle sensing elements 620, and center sensing elements 630 are arranged at intervals in the radial direction of the base 700. In this way, by using multiple temperature sensing elements 600 to detect different regions of the wafer in the radial direction of the base 700, it is beneficial to instruct the heating element 300 to move to a position relative to the different regions of the wafer in the radial direction of the base 700, so as to perform targeted heating of the wafer and further improve the heating uniformity of the wafer.

[0044] Of course, in other embodiments, the multiple temperature sensing elements 600 may not be arranged radially spaced on the base 700, but may be arranged spaced in other directions.

[0045] In one optional embodiment, the rotating plate 200 is rotatably connected to the chamber body 100 via a rotating shaft. A portion of the rotating shaft can extend outside the chamber body 100. The user can drive the rotating shaft to rotate by manual force or external driving force, thereby driving the rotating plate 200 to rotate.

[0046] In another embodiment, the semiconductor process chamber further includes a rotary drive mechanism 500, which is connected to the rotating plate 200 to drive the rotating plate 200 to rotate about the rotation axis a. Optionally, the rotary drive mechanism 500 can be a drive component capable of generating rotational power, such as a drive motor or a pneumatic motor. In this embodiment, the rotary drive mechanism 500, as part of the semiconductor process chamber, can directly drive the rotating plate 200 to rotate without the need for external force. This also helps to improve the rotational efficiency of the rotating plate 200 and facilitates the heating element 300 to uniformly heat the wafer along its circumference.

[0047] In an optional embodiment, the rotation process of the rotating plate 200 includes a first rotation process and a second rotation process. During the first rotation process, the rotation drive mechanism 500 drives the rotating plate 200 to rotate along a first rotation direction by a first angle. During the second rotation process, the rotation drive mechanism 500 drives the rotating plate 200 to rotate along a second rotation direction by a second angle. The first angle and the second angle are equal, and the first rotation direction is opposite to the second rotation direction. Optionally, the first angle and the second angle can be 360°, 720°, or other angles. That is, the first rotation process and the second rotation process refer to the forward rotation process and the reverse rotation process of the rotating plate 200, respectively.

[0048] The semiconductor process chamber also includes a control device 900, which is communicatively connected to the rotary drive mechanism 500. The control device 900 controls the rotary drive mechanism 500 to operate, causing the rotating plate 200 to alternately perform a first rotation process and a second rotation process. Optionally, the control device 900 can be a PLC (Programmable Logic Controller). Specifically, the PLC contains algorithm programs that implement the first and second rotation processes. The program has functional modules that represent rotation, and the rotation direction can be changed by changing the corresponding pins of the functional modules. The control device 900 can also be a microcontroller or other device capable of communication control.

[0049] In this embodiment, the control device 900 enables the rotating plate 200 to alternate between forward and reverse rotation processes, thereby avoiding cable entanglement of the rotating drive mechanism 500 and improving safety performance.

[0050] Of course, in other embodiments, the rotary drive mechanism 500 may drive the rotary plate 200 to rotate continuously in the first rotation direction or the second rotation direction.

[0051] In one optional embodiment, the rotary drive mechanism 500 includes a first drive source 510 and a connecting rod 520. The first drive source 510 is disposed within the chamber body 100. The output shaft of the first drive source 510 is connected to a first end of the connecting rod 520, and the second end of the connecting rod 520 is connected to the rotating plate 200. Optionally, the first drive source 510 can be a drive component capable of generating rotational power, such as a motor or pneumatic motor, and the connecting rod 520 extends along the direction of the rotation axis a of the rotating plate 200.

[0052] In another embodiment, such as Figure 1 As shown, the first drive source 510 is located outside the chamber body 100, and the second end of the connecting rod 520 penetrates the cavity wall of the chamber body 100 and is connected to the rotating plate 200. Optionally, the upper cover 120 of the chamber body 100 has an opening, through which the connecting rod 520 passes. In this way, the first drive source 510 does not occupy the internal space of the chamber body 100, and the first drive source 510 is in the external environment, allowing for direct external wiring, thus avoiding the wiring inconvenience caused by the first drive source 510 being located inside the chamber body 100.

[0053] In one optional embodiment, the heating element 300 is slidably connected to the rotating plate 200 along a first direction, and the user can rely on an external driving force to drive the heating element 300 to move along the first direction.

[0054] In another embodiment, the semiconductor process chamber further includes a linear drive mechanism 400, which is connected to at least one of the plurality of heating elements 300. The linear drive mechanism 400 drives the heating element 300 to move along a first direction, which intersects the direction of the rotation axis a of the rotating plate 200. Optionally, the linear drive mechanism 400 can be a linear drive module, a telescopic cylinder, or other drive component capable of generating linear displacement; the linear drive mechanism 400 can drive only one heating element 300 to move, or it can drive multiple heating elements 300 to move.

[0055] Thus, the linear drive mechanism 400, as part of the semiconductor process chamber, can directly drive the heating element 300 to move without the need for external force, which is beneficial to improving the moving efficiency of the heating element 300 and more beneficial to the heating element 300 uniformly heating the wafer along the radial direction of the wafer.

[0056] In optional embodiments, such as Figure 3 As shown, the linear drive mechanism 400 includes a second drive source 410, a lead screw 420, and a moving member 430. The output shaft of the second drive source 410 is connected to the end of the lead screw 420, which extends along a first direction. The moving member 430 is sleeved on the outside of the lead screw 420 and threadedly engages with the lead screw 420. The heating element 300 is connected to the moving member 430. When the second drive source 410 operates, the lead screw 420 rotates, driving the moving member 430 to move the heating element 300 along the first direction. The moving member 430 has a threaded hole, the internal thread of which engages with the external thread of the lead screw 420. The moving member 430 can be, but is not limited to, a nut 432. Optionally, the second drive source 410 can be a motor, pneumatic motor, or other drive component capable of generating rotational power.

[0057] In this embodiment, the screw threaded connection between the lead screw 420 and the moving part 430 is used to convert rotational power into linear driving power. The screw transmission structure has higher transmission stability, which is conducive to the moving part 430 and the heating element 300 moving more smoothly along the first direction.

[0058] In an optional embodiment, the semiconductor process chamber further includes a guide structure 800, which is connected to the movable member 430. Under the guidance of the guide structure 800, the movable member 430 moves along a first direction. Using this embodiment, the guide structure 800 guides the movement direction of the movable member 430, which is more conducive to the smooth and accurate movement of the movable member 430 along the first direction. Optionally, as... Figure 3As shown, the guide structure 800 includes a slide rail, which is disposed on the rotating plate 200 and extends along a first direction. The moving part 430 includes a connected slider 431 and a nut 432. The nut 432 is threadedly engaged with the lead screw 420, and the slider 431 is slidably engaged with the slide rail. Of course, the guide structure 800 can also adopt other structural forms.

[0059] Of course, in other embodiments, if the size and weight of the moving part 430 and the heating element 300 are both small, the moving part 430 and the heating element 300 can be stably driven to move by the lead screw 420. In this case, the semiconductor process chamber may not need to be provided with a guide structure 800.

[0060] In one alternative embodiment, there may be one linear drive mechanism 400, which drives only one heating element 300 to move along the first direction.

[0061] In another embodiment, there are multiple linear drive mechanisms 400, which are spaced apart in the rotation direction of the rotating plate 200. Each linear drive mechanism 400 is connected to a different heating element 300. Using this embodiment, multiple linear drive mechanisms 400 can drive multiple heating elements 300 to move radially along the rotating plate 200, allowing each moving heating element 300 to heat different regions of the wafer in its own radial direction, which helps to further improve the heating uniformity and heating effect of the wafer.

[0062] It should be noted that each linear drive mechanism 400 drives the corresponding heating element 300 to move in a different direction, that is, each heating element 300 moves radially along the rotating plate 200 at its corresponding position.

[0063] Optionally, the number of linear drive mechanisms 400 may be less than the number of heating elements 300, that is, multiple linear drive mechanisms 400 drive some heating elements 300 to move; or, the number of linear drive mechanisms 400 may be equal to the number of heating elements 300, and the linear drive mechanisms 400 and heating elements 300 may be connected in a one-to-one correspondence, so that each heating element 300 may be driven to move along the first direction by the corresponding linear drive mechanism 400.

[0064] Alternatively, there may be multiple guide structures 800, each guide structure 800 corresponding to a linear drive mechanism 400, and each guide structure 800 provides guidance to the moving part 430 of the corresponding linear drive mechanism 400.

[0065] In optional embodiments, such as Figure 2As shown, the plurality of heating elements 300 includes a plurality of first heating elements 310 and a plurality of second heating elements 320. Each first heating element 310 and each second heating element 320 is spaced apart along the rotation direction of the rotating plate 200. Each second heating element 320 surrounds the area enclosed by the plurality of first heating elements 310; that is, the second heating element 320 is located outside the first heating element 310. The distance from the second heating element 320 to the rotation axis a of the rotating plate 200 is greater than the distance from the first heating element 310 to the rotation axis a of the rotating plate 200. Thus, the first heating elements 310 and the second heating elements 320 can respectively heat different regions of the wafer in their radial direction, which is beneficial for improving the heating uniformity and heating effect of the wafer.

[0066] The linear drive mechanism 400 is connected to the first heating element 310 and / or the second heating element 320 respectively. Optionally, each first heating element 310 or each second heating element 320 is driven to move by the corresponding linear drive mechanism 400, or each first heating element 310 and each second heating element 320 is driven to move by the corresponding linear drive mechanism 400.

[0067] Furthermore, the first heating element 310 and the second heating element 320 are offset in the radial direction of the rotating plate 200. Thus, when the linear drive mechanism 400 drives one of the first heating element 310 and the second heating element 320 to move along the first direction, the linear drive mechanism 400 avoids affecting the other. Moreover, compared to the previous embodiment, the number of linear drive mechanisms 400 is reduced, which helps to reduce space occupation and also ensures that the heating element 300 can heat different regions of the wafer in its own radial direction.

[0068] Of course, in other embodiments, the first heating element 310 and the second heating element 320 may also be arranged opposite each other in the radial direction of the rotating plate 200.

[0069] In an embodiment where the semiconductor process chamber includes a temperature sensing element 600, the temperature sensing element 600 is communicatively connected to the linear drive mechanism 400 and the rotary drive mechanism 500, respectively. Optionally, the semiconductor process chamber also includes a control device 900, which is communicatively connected to the temperature sensing element 600, the linear drive mechanism 400, and the rotary drive mechanism 500, respectively. Further optionally, the control device 900 is communicatively connected to the temperature sensing element 600, the second drive source 410, and the first drive source 510, respectively. Thus, the control device 900 controls the first drive source 510 and the second drive source 410 based on the temperature information detected by the temperature sensing element 600.

[0070] Further optional, such as Figure 5As shown, both the first drive source 510 and the second drive source 410 can be motors. The motors are controlled by the driver. That is, the first drive source 510 is controlled by the first driver 511, and the second drive source 410 is controlled by the second driver 411. The control device 900 is communicatively connected to the first driver 511 and the second driver 411 to control the first drive source 510 and the second drive source 410.

[0071] In the embodiments of this application, there are multiple temperature detection elements 600, each of which detects the temperature of different areas of the base 700. When the temperature difference between a certain area and other areas is greater than a first temperature difference, it indicates that the temperature of that area is higher than that of other areas, and the temperature of that area is lower, requiring focused heating. The control device 900 controls the first driving source 510 and the second driving source 410 to work, so that the heating element 300 is opposite to that area for targeted heating. When the temperature difference between a certain area and other areas is less than the first temperature difference, it indicates that the temperature difference between that area and other areas is smaller, and the temperature of each area is more uniform. The control device 900 can control the first driving source 510 to drive the rotating plate 200 to rotate at a uniform speed (the first rotation process and the second rotation process alternate), and control the second driving source 410 to drive the heating element 300 to reciprocate along the first direction to achieve uniform heating.

[0072] It should be noted that the temperature difference between a certain area and other areas mentioned above refers to the temperature difference between the area with the higher temperature and the area with the higher temperature. In other words, if the temperature difference between the area with the higher temperature and the area with the lower temperature detected by each temperature sensing element 600 is greater than the first temperature difference, a targeted heating process is carried out; if the temperature difference between the area with the higher temperature and the area with the lower temperature is less than the first temperature difference, a uniform heating process is carried out.

[0073] Based on the semiconductor process chamber disclosed in this application, this application also discloses a semiconductor process apparatus, which includes the semiconductor process chamber described in the above embodiments. The semiconductor process chamber is a semiconductor degassing chamber. With this configuration, the semiconductor process chamber of this semiconductor process apparatus, through the rotating plate 200 and the driving mechanism, can change the heating position of the heating element 300, allowing the heating element 300 to heat various areas of the wafer, improving the uniformity of the wafer surface temperature, thereby enhancing heating efficiency and heating effect.

[0074] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A semiconductor process chamber, characterized in that: The invention comprises a chamber body (100), a rotating plate (200) and a plurality of heating elements (300), wherein: The rotating plate (200) is rotatably arranged in the chamber body (100), a base (700) for carrying a wafer is arranged in the chamber body (100), the base (700) is opposite to the rotating plate (200), and a plurality of heating elements (300) are arranged at intervals on the rotating plate (200) to heat the wafer.

2. The semiconductor process chamber according to claim 1, characterized in that: At least one of the plurality of heating elements (300) is movably disposed on the rotating plate (200) along a first direction, wherein the first direction intersects with a direction in which a rotation axis (a) of the rotating plate (200) is located.

3. The semiconductor process chamber according to claim 2, characterized in that: The semiconductor process chamber further comprises at least two temperature detection elements (600), including a first temperature detection element and a second temperature detection element, wherein the first temperature detection element is arranged in a first area of ​​the base (700) to detect the temperature of the first area, and the second temperature detection element is arranged in a second area of ​​the base (700) to detect the temperature of the second area. When the temperature difference between the first area and the second area is greater than the first temperature difference, the rotating plate (200) can drive each of the heating elements (300) to rotate, and the heating elements (300) can move relative to the base (700) along the first direction, so that the heating elements (300) are opposite to the area with lower temperature between the first area and the second area.

4. The semiconductor process chamber according to claim 3, characterized in that: A plurality of the temperature detection elements (600) are arranged at intervals in the radial direction of the base (700).

5. The semiconductor process chamber according to claim 2, wherein: The semiconductor process chamber further comprises a linear drive mechanism (400), wherein the linear drive mechanism (400) is connected to at least one of the plurality of heating elements (300), and the linear drive mechanism (400) drives the heating element (300) to move along the first direction.

6. The semiconductor process chamber according to claim 5, characterized in that: The linear drive mechanism (400) comprises a second drive source (410), a screw rod (420) and a moving member (430); the output shaft of the second drive source (410) is connected to the end of the screw rod (420); the moving member (430) is sleeved on the outside of the screw rod (420); the moving member (430) is threadedly matched with the screw rod (420); the heating element (300) is connected to the moving member (430); when the second drive source (410) is working, the screw rod (420) rotates and drives the moving member (430) to drive the heating element (300) to move along the first direction.

7. The semiconductor process chamber according to claim 6, characterized in that: The semiconductor process chamber further comprises a guide structure (800), wherein the guide structure (800) is connected to the moving member (430), and under the guiding action of the guide structure (800), the moving member (430) moves along the first direction.

8. The semiconductor process chamber according to claim 5, characterized in that: There are a plurality of linear drive mechanisms (400), each of which is arranged at intervals in the rotation direction of the rotating plate (200), and each of the linear drive mechanisms (400) is connected to a different heating element (300).

9. The semiconductor process chamber according to claim 8, characterized in that: The plurality of heating elements (300) include a plurality of first heating elements (310) and a plurality of second heating elements (320); each of the first heating elements (310) and each of the second heating elements (320) are arranged at intervals along the rotation direction of the rotating plate (200); each of the second heating elements (320) surrounds the outside of an area surrounded by the plurality of first heating elements (310); and the first heating elements (310) and the second heating elements (320) are arranged in a staggered manner in the radial direction of the rotating plate (200); and the linear drive mechanism (400) is connected to the first heating elements (310) and / or the second heating elements (320) in a one-to-one correspondence.

10. The semiconductor process chamber according to claim 2, wherein: The first direction is perpendicular to the rotation axis (a) of the rotating plate (200).

11. The semiconductor process chamber according to claim 2, wherein: The semiconductor process chamber further comprises a rotation driving mechanism (500), wherein the rotation driving mechanism (500) is connected to the rotation plate (200) to drive the rotation plate (200) to rotate around the rotation axis (a); The rotary drive mechanism (500) comprises a first drive source (510) and a connecting rod (520), wherein the first drive source (510) is located outside the chamber body (100), an output shaft of the first drive source (510) is connected to a first end of the connecting rod (520), and a second end of the connecting rod (520) passes through the cavity wall of the chamber body (100) and is connected to the rotating plate (200).

12. A semiconductor process equipment, characterized in that: The semiconductor process chamber comprises the semiconductor process chamber as described in any one of claims 1 to 11, wherein the semiconductor process chamber is a semiconductor degassing chamber.

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