A method for hot aluminum hole filling and semiconductor processing equipment

Abstract

The present invention provides a method for hot aluminum hole filling and semiconductor processing equipment, the method comprising the following steps: (1) degassing and pre-cleaning a substrate containing holes to be filled; (2) depositing a titanium layer on the side and bottom of the holes to be filled in a nitrogen-free protective atmosphere; (3) depositing a titanium nitride layer on the titanium layer in a nitrogen-containing mixed protective atmosphere; (4) growing a cold aluminum seed layer on the titanium nitride layer, and then growing a hot aluminum layer on the cold aluminum seed layer to complete the hole filling. In the process of hot aluminum hole filling, the present invention uses a nitrogen-containing mixed protective atmosphere to deposit a titanium layer to reduce the resistivity of the titanium nitride layer, further reduce the pores generated by aluminum filling, and improve the uniformity of aluminum hole filling.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor materials and relates to a hot aluminum hole filling method and semiconductor processing equipment. Background Art

[0002] In the manufacture of semiconductor integrated circuits, after the front-end process (FEOL) of the device layer on the semiconductor substrate is completed, the middle-end process (MOL) is required, and then the back-end process (BEOL) is carried out. The middle-end process includes the formation process of contact holes (CT), through which the doped regions of the device on the semiconductor substrate are connected to the first metal layer in the conductive back-end process. Semiconductor material aluminum is the earliest material widely used to fill contact holes due to its low resistivity and simple process.

[0003] As the size of semiconductor processes decreases, especially for 12-inch advanced processes, the process of directly depositing aluminum filling into the filled contact holes through the physical vapor deposition (PVD) process is limited by the uniformity of aluminum flow in the filled holes and the adhesion to the hole wall, which makes it easy for aluminum filling to produce gaps and voids and cannot meet the process requirements well. The titanium nitride layer deposited in the filled hole (generally used as a barrier layer and wetting layer) has a high resistivity and a loose film quality, and the titanium nitride barrier effect is too poor. Al atoms will diffuse and dissolve in Si, forming Al penetration.

[0004] CN113224001A discloses a process for aluminum hole filling, comprising: step 1, forming an interlayer film on the surface of a semiconductor substrate. Step 2, removing the interlayer film in the hole formation area to form a first opening located in the interlayer film. Step 3, forming an inner side wall composed of a second dielectric layer on the inner side of the first opening, and the inner side wall encloses a second opening in the first opening; a full etching process rounds the top corner of the inner side wall, so that the morphology of the second opening is an arc-shaped opening morphology that is conducive to aluminum filling. Step 4, using the interlayer film and the inner side wall as a mask, etching the semiconductor substrate at the bottom of the second opening to form a third opening. Step 5, filling the hole with an aluminum layer.

[0005] CN104253087A discloses a method for filling contact holes in an aluminum metal process, comprising the steps of: 1) etching contact holes on a silicon substrate; 2) filling a first barrier layer; 3) filling a first metal aluminum layer on the surface of the first barrier layer; 4) filling a second metal aluminum layer in the contact hole; 5) filling a third metal aluminum layer on the surfaces of the first and second metal aluminum layers; 6) forming a second barrier layer on the third metal aluminum layer; and 7) etching a metal aluminum line pattern.

[0006] The hole filling method described in the above scheme has limited hole filling effect, and the dielectric layer has poor conductivity and too high resistivity during the hole filling process. Summary of the invention

[0007] The purpose of the present invention is to provide a method for hot aluminum hole filling and semiconductor processing equipment. During the hot aluminum hole filling process, the present invention uses a nitrogen-containing mixed protective atmosphere to deposit a titanium layer to reduce the resistivity of the titanium nitride layer, and further reduce the pores generated by the aluminum filling, thereby improving the uniformity of the aluminum hole filling. To this end, the present invention also provides a semiconductor processing equipment.

[0008] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0009] In a first aspect, the present application provides a method for hot aluminum hole filling, the method comprising the following steps:

[0010] (1) Degassing and pre-cleaning the substrate containing the holes to be filled;

[0011] (2) depositing a titanium layer on the side and bottom of the hole to be filled in a nitrogen-free protective atmosphere;

[0012] (3) depositing a titanium nitride layer on the surface of the titanium layer under a nitrogen-containing mixed protective atmosphere;

[0013] (4) After growing a cold aluminum seed layer on the surface of the titanium nitride layer, a hot aluminum layer is grown on the cold aluminum seed layer to complete the hole filling.

[0014] The present invention pre-degasses the substrate, which can effectively remove moisture and organic residues in the holes to be filled, prevent moisture and organic residues from affecting the subsequent growth of hot aluminum, and then pre-clean to remove the oxide layer in the holes to be filled, deposit a titanium layer as an adhesion layer, and then deposit a titanium nitride layer under a nitrogen-containing mixed protective atmosphere. During the deposition of the titanium nitride layer, the ratio of nitrogen to protective gas is different, and the generated film quality is also different. The present invention controls the mixing of nitrogen and protective gas to obtain a titanium nitride layer with lower resistivity, which is beneficial to improving the barrier effect and making the hot Al fill better.

[0015] Preferably, the degassing temperature in step (1) is 400-450°C, for example, 400°C, 410°C, 420°C, 440°C or 450°C, etc., but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0016] Preferably, the cleaning thickness of the pre-cleaning treatment in step (1) is 100 to 200 angstroms, for example, 100 angstroms, 120 angstroms, 150 angstroms, 180 angstroms or 200 angstroms, etc., but is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0017] The pre-cleaning process of the present invention comprises introducing argon gas into the pre-cleaning chamber, connecting a radio frequency power supply above the pre-cleaning chamber, so that the argon gas dissociates to generate Ar +and e - , a DC power supply is connected to the bottom of the pre-cleaning chamber to form a bias, e - The relatively light Ar is attracted to the wafer under bias and gathers. + The heavier particles are gradually attracted by the generated bias voltage and bombard the wafer surface downward, removing the surface oxide.

[0018] Preferably, the gas in the nitrogen-free protective atmosphere in step (2) includes argon.

[0019] Preferably, the thickness of the titanium layer is 400-600 angstroms, for example, 400 angstroms, 450 angstroms, 500 angstroms, 550 angstroms or 600 angstroms, etc., but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0020] Preferably, the gas in the nitrogen-containing mixed protective atmosphere in step (3) includes nitrogen and argon.

[0021] Preferably, when the inclination of the hole edge of the hole to be filled is ≤70°, the flow ratio of argon and nitrogen in the nitrogen-containing mixed protective atmosphere is 1:(2.5~3.5), for example: 1:2.5, 1:2.8, 1:3, 1:3.2 or 1:3.5, etc., not limited to the listed values, other unlisted values ​​within the numerical range are also applicable, and the pressure for depositing the titanium nitride layer is 5~6mtorr, for example: 5mtorr, 5.2mtorr, 5.5mtorr, 5.8mtorr or 6mtorr, etc., not limited to the listed values, other unlisted values ​​within the numerical range are also applicable.

[0022] Preferably, when the inclination of the hole edge of the hole to be filled is >70°, the flow rate of argon and nitrogen in the nitrogen-containing mixed protective atmosphere is 1:(1.75~2.25), for example: 1:2, 1:2.05, 1:2.1, 1:2.2 or 1:2.25, etc., not limited to the listed values, other unlisted values ​​within the numerical range are also applicable, and the pressure of depositing the titanium nitride layer is 6~6.3mtorr, for example: 6mtorr, 6.1mtorr, 6.15mtorr, 6.2mtorr or 6.3mtorr, etc., not limited to the listed values, other unlisted values ​​within the numerical range are also applicable.

[0023] The titanium nitride films prepared in the present invention under different argon-nitrogen ratio atmospheres have different qualities. Under a suitable argon-nitrogen ratio, while ensuring a lower pressure, the prepared titanium nitride film has a lower resistivity, and a lower resistivity is beneficial to improving the barrier effect. A lower process pressure helps to improve the wettability of titanium nitride, increase the surface diffusion of Al thereon, and achieve better filling.

[0024] The inclination of the hole edge of the hole to be filled in the present invention is the angle between the side edge of the hole to be filled and the extension line of the bottom surface.

[0025] Preferably, the thickness of the titanium nitride layer in step (3) is 1000-200 angstroms, for example, 1000 angstroms, 1200 angstroms, 1500 angstroms, 1800 angstroms or 2000 angstroms, etc., but is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0026] Preferably, the atmosphere for growing the cold aluminum seed layer in step (4) includes argon.

[0027] Preferably, the power for growing the cold aluminum seed layer is 10-15 kW, for example, 10 kW, 11 kW, 12 kW, 14 kW or 15 kW, etc., and is not limited to the listed values, and other values ​​not listed within the range are also applicable.

[0028] Preferably, the time for growing the cold aluminum seed layer is 5 to 15 seconds, for example, 5 seconds, 8 seconds, 10 seconds, 12 seconds or 15 seconds, etc., and is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0029] Preferably, the temperature of growing the hot aluminum layer in step (4) is 420-480°C, for example, 420°C, 430°C, 450°C, 460°C or 480°C, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0030] Preferably, the atmosphere for growing the thermal aluminum layer comprises argon.

[0031] Preferably, argon purging and argon reflux are performed during the process of growing the thermal aluminum layer.

[0032] Preferably, when the inclination of the hole edge of the hole to be filled is ≤70°, the flow rate ratio of the front argon gas and the back argon gas of the argon gas purge is (2~4):1, for example: 2:1, 2.5:1, 3:1, 3.5:1 or 4:1, etc., not limited to the listed values, other unlisted values ​​within the numerical range are also applicable.

[0033] The front argon gas mentioned in the present invention refers to the nitrogen gas passing through one side of the hole to be filled in the substrate, and the back argon gas refers to the argon gas passing through the back side of the hole to be filled in the substrate.

[0034] Preferably, when the inclination of the hole edge of the hole to be filled is >70°, the flow rate ratio of the front argon gas and the back argon gas of the argon purge is (1~1.5):1, for example: 1:1, 1.2:1, 1.3:1, 1.4:1 or 1.5:1, etc., not limited to the listed values, other unlisted values ​​within the numerical range are also applicable.

[0035] In a second aspect, the present application provides a semiconductor processing device, wherein the semiconductor processing device is used to perform the thermal aluminum via filling method as described in the first aspect.

[0036] The semiconductor processing equipment comprises a transmission chamber, and the transmission chamber is respectively connected with a pre-cleaning chamber and at least one reaction chamber.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] (1) In the process of hot aluminum hole filling, the present invention uses a nitrogen-containing mixed protective atmosphere to deposit a titanium layer to reduce the resistivity of the titanium nitride layer, further reduce the pores generated by aluminum filling, and improve the uniformity of aluminum hole filling.

[0039] (2) The titanium nitride films prepared in the present invention under different argon-nitrogen ratio atmospheres have different qualities. Lower resistivity is beneficial to improving the barrier effect, and lower process pressure is helpful to improving the wettability of titanium nitride, thereby increasing the surface diffusion of Al thereon and achieving better filling. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 This is a hole-filling SEM image of the center position of the substrate after the hole-filling is obtained by the hot aluminum hole-filling method described in Example 1.

[0041] Figure 2 This is a hole-filling SEM image of the edge position of the substrate after the hole-filling is obtained by the hot aluminum hole-filling method described in Example 1.

[0042] Figure 3 This is a hole-filling SEM image of the center position of the substrate after the hole-filling is obtained by the hot aluminum hole-filling method described in Example 2.

[0043] Figure 4 This is a hole-filling SEM image of the edge position of the substrate after the hole-filling is obtained by the hot aluminum hole-filling method described in Example 2.

[0044] Figure 5 This is a hole-filling SEM image of the center position of the substrate after the hole-filling is obtained by the hot aluminum hole-filling method described in Example 3.

[0045] Figure 6 This is a hole-filling SEM image of the edge position of the substrate after the hole-filling is obtained by the hot aluminum hole-filling method described in Example 3.

[0046] Figure 7 It is a schematic diagram of the partial structure of the semiconductor processing equipment of the present invention, wherein 1-3 are reaction chambers, 4 is a transmission chamber, and 5 is a pre-cleaning chamber. DETAILED DESCRIPTION

[0047] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0048] The partial structural schematic diagram of the semiconductor processing equipment for performing the thermal aluminum hole filling embodiment and the comparative example of the present invention is as follows: Figure 7 As shown, the semiconductor processing equipment includes a transmission chamber 4, which is connected to a pre-cleaning chamber 5 and at least one reaction chamber, wherein the transmission chamber 4 is used for the transfer and transportation of wafers, the pre-cleaning chamber 5 is used for pre-cleaning the wafers, and the reaction chamber is used for the hole filling process. There are three reaction chambers in the semiconductor processing equipment used in the embodiment of the present invention, namely, reaction chamber 1, reaction chamber 2 and reaction chamber 3, which can process three wafers at the same time. The number of reaction chambers is not limited to 3 and can be appropriately increased or decreased according to actual needs.

[0049] Example 1

[0050] This embodiment provides a method for hot aluminum hole filling, the method comprising the following steps:

[0051] (1) Degassing the substrate containing the holes to be filled (hole edge inclination 60°) at 425°C to remove moisture and organic residues in the holes to be filled to prevent moisture and organic residues from affecting the subsequent growth of hot aluminum, followed by pre-cleaning treatment with a thickness of 160 angstroms;

[0052] (2) In an argon atmosphere, a titanium layer with a thickness of 500 angstroms is deposited on the side and bottom of the hole to be filled;

[0053] (3) depositing a titanium nitride layer with a thickness of 1500 angstroms under the conditions of an argon gas flow rate of 25 sccm, a nitrogen gas flow rate of 75 sccm, and a pressure of 5.6 mtorr;

[0054] (4) On the titanium nitride layer, an argon gas flow rate of 55 sccm was used to deposit a cold aluminum seed layer at a power of 14 kW for 10 s. Then, argon was purged at 455°C for 135 s at a power of 14 kW (front argon gas flow rate of 45 sccm, back argon gas flow rate of 15 sccm), and the argon gas was refluxed for 900 s (front argon gas flow rate of 0 sccm, back argon gas flow rate of 15 sccm) to grow a hot aluminum layer to complete the hole filling.

[0055] The SEM image of the hole filling at the center of the substrate after hole filling is as follows: Figure 1 As shown, the SEM image of the hole filling at the edge is as follows Figure 2 shown.

[0056] Example 2

[0057] This embodiment provides a method for hot aluminum hole filling, the method comprising the following steps:

[0058] (1) Degassing the substrate containing the holes to be filled (hole edge inclination 80°) at 400°C to remove moisture and organic residues in the holes to be filled to prevent moisture and organic residues from affecting the subsequent growth of hot aluminum, followed by pre-cleaning treatment with a thickness of 120 angstroms;

[0059] (2) In an argon atmosphere, a titanium layer with a thickness of 400 angstroms is deposited on the side and bottom of the hole to be filled;

[0060] (3) depositing a titanium nitride layer with a thickness of 1500 angstroms under the conditions of an argon gas flow rate of 30 sccm, a nitrogen gas flow rate of 65 sccm, and a pressure of 6.1 mtorr;

[0061] (4) On the titanium nitride layer, an argon gas flow rate of 45 sccm was used to deposit a cold aluminum seed layer at a power of 12 kW for 10 s. Then, argon was purged at 455°C for 263 s at a power of 1.5 kW (argon gas flow rate of 20 sccm on the front side and 15 sccm on the back side), and argon was reflowed at a power of 10 kW for 200 s (argon gas flow rate of 30 sccm on the front side and 15 sccm on the back side) to grow a hot aluminum layer to complete the hole filling.

[0062] The SEM image of the hole filling at the center of the substrate after hole filling is as follows: Figure 3 As shown, the SEM image of the hole filling at the edge is as follows Figure 4 shown.

[0063] Example 3

[0064] This embodiment provides a method for hot aluminum hole filling, the method comprising the following steps:

[0065] (1) Degassing the substrate containing the holes to be filled (hole edge inclination 85°) at 450°C to remove moisture and organic residues in the holes to be filled to prevent moisture and organic residues from affecting the subsequent growth of hot aluminum, followed by pre-cleaning treatment with a thickness of 150 angstroms;

[0066] (2) In an argon atmosphere, a titanium layer with a thickness of 600 angstroms is deposited on the side and bottom of the hole to be filled;

[0067] (3) depositing a titanium nitride layer with a thickness of 1500 angstroms under the conditions of an argon gas flow rate of 20 sccm, a nitrogen gas flow rate of 35 sccm, and a pressure of 6.3 mtorr;

[0068] (4) On the titanium nitride layer, an argon gas flow rate of 45 sccm was used to deposit a cold aluminum seed layer at a power of 10 kW for 12 s. Then, argon was purged at a power of 0.8 kW for 255 s at 465°C (argon gas flow rate of 12 sccm on the front side and 7 sccm on the back side), and the argon was refluxed for 420 s (argon gas flow rate of 0 sccm on the front side and 15 sccm on the back side, refluxed for 7 cycles, each cycle of 60 s), to grow a hot aluminum layer to complete the hole filling.

[0069] The SEM image of the hole filling at the center of the substrate after hole filling is as follows: Figure 5 As shown, the SEM image of the hole filling at the edge is as follows Figure 6 shown.

[0070] Example 4

[0071] The only difference between this embodiment and embodiment 1 is that in step (3), the argon gas flow rate is 25 sccm and the nitrogen gas flow rate is 50 sccm. Other conditions and parameters are exactly the same as those in embodiment 1.

[0072] Example 5

[0073] The only difference between this embodiment and embodiment 1 is that in step (3), the argon gas flow rate is 25 sccm and the nitrogen gas flow rate is 100 sccm. The other conditions and parameters are exactly the same as those in embodiment 1.

[0074] Example 6

[0075] The only difference between this embodiment and embodiment 1 is that the pressure of depositing the titanium nitride layer in step (3) is 4.8 mtorr, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0076] Example 7

[0077] The only difference between this embodiment and embodiment 1 is that the pressure of depositing the titanium nitride layer in step (3) is 6.2 mtorr, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0078] Example 8

[0079] The only difference between this embodiment and embodiment 3 is that in step (3), the argon gas flow rate is 20 sccm and the nitrogen gas flow rate is 30 sccm. Other conditions and parameters are exactly the same as those in embodiment 3.

[0080] Example 9

[0081] The only difference between this embodiment and embodiment 3 is that in step (3), the argon gas flow rate is 20 sccm and the nitrogen gas flow rate is 50 sccm. The other conditions and parameters are exactly the same as those in embodiment 3.

[0082] Example 10

[0083] The only difference between this embodiment and embodiment 3 is that the pressure of depositing the titanium nitride layer in step (3) is 5.8 mtorr, and the other conditions and parameters are exactly the same as those in embodiment 3.

[0084] Embodiment 11

[0085] The only difference between this embodiment and embodiment 3 is that the pressure of depositing the titanium nitride layer in step (3) is 6.5 mtorr, and the other conditions and parameters are exactly the same as those in embodiment 3.

[0086] Comparative Example 1

[0087] The only difference between this comparative example and Example 1 is that step (3) of depositing the titanium nitride layer is performed only under a nitrogen atmosphere, and the other conditions and parameters are exactly the same as those in Example 1.

[0088] Comparative Example 2

[0089] The difference between this comparative example and Example 1 is that step (3) directly deposits titanium nitride under an argon atmosphere (titanium and nitrogen react to form titanium nitride under a nitrogen-containing atmosphere, and this comparative example directly uses titanium nitride as a raw material for deposition). The other conditions and parameters are exactly the same as those in Example 1.

[0090] Performance Testing:

[0091] The materials obtained from the above examples and comparative examples were tested, and the test results are shown in Table 1:

[0092] Table 1

[0093] Resistivity of titanium nitride layer (μΩ·cm) Hot aluminum filling contact rate (%) Example 1 82.2 95.3 Example 2 83.5 94.9 Example 3 84.5 93.5 Example 4 90.6 84.5 Example 5 101.2 84.2 Example 6 113.1 80.4 Example 7 119.6 79.8 Example 8 131.7 75.8 Example 9 142.4 74.5 Example 10 152.5 71.2 Embodiment 11 165.2 70.1 Comparative Example 1 301.2 40.0 Comparative Example 2 352.0 35.0

[0094] It can be seen from Table 1 that according to Examples 1-3, the resistivity of the titanium nitride layer prepared by the method of the present invention can reach 84.5 μΩ·cm, and the hot aluminum filling contact rate can reach more than 93.5%.

[0095] By comparing Example 1 with Examples 4-5 and Example 3 with Examples 8-9, it can be obtained that in the method for hot aluminum hole filling of the present invention, it is necessary to adjust the argon nitrogen flow rate when depositing the titanium nitride layer according to the inclination of the hole edge of the hole to be filled, the inclination of the hole edge of the hole to be filled is ≤70°, the flow ratio of argon and nitrogen in the nitrogen-containing mixed protective atmosphere is controlled at 1:(2.5~3.5), the inclination of the hole edge of the hole to be filled is>70°, the flow rate of argon and nitrogen in the nitrogen-containing mixed protective atmosphere is controlled at 1:(1.75~2.25), the hole filling effect is better, if it exceeds the above range (nitrogen flow rate is too large), the resistivity is too high, the looser the film quality, the worse the blocking effect, the worse the hole filling ability of Al, if it exceeds the above range (nitrogen flow rate is too small), the film quality is close to Ti, there is no blocking effect, and Al is easy to form puncture.

[0096] By comparing Example 1 with Examples 6-7 and Example 3 with Examples 10-11, it can be obtained that in the method for hot aluminum hole filling described in the present invention, it is necessary to adjust the pressure when depositing the titanium nitride layer according to the inclination of the hole edge of the hole to be filled. If the inclination of the hole edge of the hole to be filled is ≤70°, the pressure for depositing the titanium nitride layer is controlled at 5~6mtorr. If the inclination of the hole edge of the hole to be filled is >70°, the pressure for depositing the titanium nitride layer is controlled at 6~6.3mtorr, and the hole filling effect is better. If it exceeds the above range (the pressure is too high), the resistivity is too high, the looser the film quality, the worse the blocking effect, and the worse the hole filling ability of Al. If it exceeds the above range (the pressure is too low), the film quality is close to Ti, there is no blocking effect, and Al is prone to puncture.

[0097] By comparing Example 1 and Comparative Examples 1-2, it can be seen that in the process of hot aluminum hole filling, the present invention uses a nitrogen-containing mixed protective atmosphere to deposit a titanium layer to reduce the resistivity of the titanium nitride layer, and further reduce the pores generated by aluminum filling, thereby improving the uniformity of aluminum hole filling. The titanium nitride layer formed by a suitable argon-nitrogen ratio is crucial to the Al filling effect.

[0098] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for hot aluminum hole filling, characterized in that: The method comprises the following steps: (1) Degassing and pre-cleaning the substrate containing the holes to be filled; (2) depositing a titanium layer on the side and bottom of the hole to be filled in a nitrogen-free protective atmosphere; (3) depositing a titanium nitride layer on the surface of the titanium layer under a nitrogen-containing mixed protective atmosphere; (4) After growing a cold aluminum seed layer on the surface of the titanium nitride layer, a hot aluminum layer is grown on the cold aluminum seed layer to complete the hole filling; Wherein, the gas in the nitrogen-containing mixed protective atmosphere in step (3) includes nitrogen and argon; When the inclination of the hole edge of the hole to be filled is ≤70°, the flow ratio of argon gas to nitrogen gas in the nitrogen-containing mixed protective atmosphere is 1:(2.5-3.5), and the pressure of depositing the titanium nitride layer is 5-6 mtorr; When the inclination of the hole edge of the hole to be filled is greater than 70°, the flow rate of argon and nitrogen in the nitrogen-containing mixed protective atmosphere is 1:(1.75-2.25), and the pressure of depositing the titanium nitride layer is 6-6.3 mtorr.

2. The method according to claim 1, characterized in that The degassing temperature in step (1) is 400-450°C.

3. The method according to claim 1, characterized in that The cleaning thickness of the pre-cleaning treatment in step (1) is 100 to 200 angstroms.

4. The method according to claim 1, characterized in that The thickness of the titanium layer in step (2) is 400-600 angstroms.

5. The method according to claim 1, characterized in that The thickness of the titanium nitride layer in step (3) is 1000-2000 angstroms.

6. The method according to claim 1, characterized in that The atmosphere for growing the cold aluminum seed layer in step (4) includes argon; The power for growing the cold aluminum seed layer is 10-15 kW; The time for growing the cold aluminum seed layer is 5 to 15 seconds.

7. The method according to claim 1, characterized in that The temperature of growing the hot aluminum layer in step (4) is 420-480°C.

8. The method according to claim 1, characterized in that The atmosphere for growing the hot aluminum layer in step (4) includes argon; Argon purging and argon reflux are performed during the growth of the hot aluminum layer; When the inclination of the hole edge of the hole to be filled is ≤70°, the flow rate ratio of the front argon gas and the back argon gas of the argon gas purge is (2-4):1; When the inclination of the hole edge of the hole to be filled is greater than 70°, the flow rate ratio of the front argon gas and the back argon gas of the argon gas purge is (1~1.5):

1.

9. A semiconductor processing equipment, characterized in that: The semiconductor processing equipment is used to perform the method for hot aluminum hole filling as claimed in any one of claims 1 to 8; The semiconductor processing equipment comprises a transmission chamber, and the transmission chamber is respectively connected with a pre-cleaning chamber and at least one reaction chamber.

Images