A method for growing high-quality gallium oxide thin films based on rapid melting technology

Abstract

The invention provides a method for growing a high-quality gallium oxide film based on a rapid melting technology. The method comprises the following steps: selecting a gallium oxide single crystal substrate; growing a first insulating layer on the gallium oxide single crystal substrate, patterning the first insulating layer to form a first wafer with a growth space, wherein the growth space comprises a neck region contacting the gallium oxide single crystal substrate and a lateral extension region connected to the neck region; depositing gallium oxide in the growth space of the first wafer by a low-pressure chemical vapor deposition method, and photolithographically etching the gallium oxide to obtain a second wafer; depositing a second insulating layer on the second wafer to obtain a third wafer, wherein the second insulating layer covers the gallium oxide, and the first insulating layer and the second insulating layer are made of the same insulating material; melting and annealing the third wafer to remove the insulating layer on the plane where the gallium oxide is located to obtain a gallium oxide film, thereby solving the problems of low crystal quality and many film defects encountered in the current gallium oxide growth process.

Description

Technical Field

[0001] The invention relates to the technical field of wide bandgap compound semiconductors and the field of photoelectric detection, and in particular to a method for growing a high-quality gallium oxide film based on a rapid melting technology. Background Art

[0002] The bandgap of gallium oxide semiconductors is about 4.9eV, and the breakdown electric field strength is as high as 8MV / cm, which is much higher than semiconductor materials such as silicon (Si), silicon carbide (SiC) and gallium nitride (GaN). The larger the bandgap, the higher the voltage and critical electric field that the device can withstand, and the greater the output power of the device. At the same time, the larger the bandgap, the higher the chemical stability of the device, so that the power device can work in a more severe environment, greatly improving the stability and reliability of the system. In addition, the theoretical loss of gallium oxide is 1 / 3000 of silicon, 1 / 6 of silicon carbide, and 1 / 3 of gallium nitride, that is, the loss is reduced by 86% on the basis of SiC's 86% loss reduction compared to Si. Because gallium oxide semiconductors have such superior physical properties, high thermal and chemical stability, low energy loss, good controllability and low cost, they have shown great potential in the manufacture of high-temperature, high-power electronic devices, solar-blind ultraviolet optoelectronic devices, and ultraviolet transparent conductive electrodes.

[0003] High-quality gallium oxide epitaxial films are necessary for designing and manufacturing various types of optical and electrical devices. Avoiding undesirable impurities and minimizing structural defects, such as dislocations, stacking faults, and point defects in epitaxial films, are important methods for improving the performance of materials and expanding the application prospects of materials. After years of research, several epitaxial growth methods have been developed and used for the growth of gallium oxide films, such as molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), metal organic chemical vapor deposition (MOCVD), pulsed laser deposition (PLD), and mist vapor deposition (mist-CVD). For example, CN113053731A discloses a method for making a gallium metal film and a method for protecting a gallium nitride substrate, which use metal organic chemical vapor deposition (MOCVD) technology to grow gallium films; however, among the above methods, the film grown by molecular beam epitaxy (MBE) is of high quality, but the deposition rate is extremely slow, the cost is high, and the process is complex. The growth rate of metal organic chemical vapor deposition (MOCVD) is fast and the quality of the grown film is good, but the equipment used in MOCVD is relatively complex, the reaction environment requirements are relatively high, and the process operation is relatively cumbersome, which greatly increases the production cost; pulsed laser deposition (PLD) has a fast growth rate and high film quality, but its process complexity is high and the cost is high; mist vapor deposition (mist-CVD) has a fast growth rate, low production cost, simple process operation, and low environmental requirements, but the quality of the grown gallium oxide film is low.

[0004] Therefore, it is necessary to develop a method that is simple to operate, low in cost, and can grow high-quality gallium oxide films. Summary of the invention

[0005] The purpose of the present invention is to provide a method for growing high-quality gallium oxide thin films based on rapid melting technology. A defect-free, high-quality gallium oxide thin film is grown by rapid melting technology, which solves the problems of low crystal quality and many film defects encountered in the current gallium oxide growth process, reduces crystal defects during the growth process, and provides a new idea and method for growing gallium oxide thin films.

[0006] To achieve the above objectives, the present technical solution provides a method for growing high-quality gallium oxide thin films based on rapid melting technology, comprising the following steps:

[0007] S1: Select gallium oxide single crystal substrate;

[0008] S2: growing a first insulating layer on the gallium oxide single crystal substrate, and patterning the first insulating layer to form a first wafer having a growth space, wherein the growth space includes a neck region contacting the gallium oxide single crystal substrate and a lateral extension region connected to the neck region;

[0009] S3: depositing gallium oxide in the growth space of the first wafer by low pressure chemical vapor deposition, and photolithographically etching the gallium oxide to obtain a second wafer;

[0010] S4: depositing a second insulating layer on the second wafer to obtain a third wafer, wherein the second insulating layer covers gallium oxide, and the first insulating layer and the second insulating layer are made of the same insulating material;

[0011] S5: Melting and annealing the third wafer to remove the insulating layer on the plane where the gallium oxide is located to obtain a gallium oxide thin film.

[0012] Compared with the prior art, this technical solution has the following characteristics and beneficial effects:

[0013] The present invention provides a method for growing high-quality gallium oxide thin films based on rapid melting technology. The manufacturing process is simple. After rapid melting, the exposed interface of the gallium oxide single crystal substrate is laterally expanded into the gallium oxide liquid encapsulated in the growth space surrounded by the insulating layer, and a high-quality gallium oxide thin film is grown for device manufacturing. This solution controls the neck area corresponding to the deposited gallium oxide and the very narrow window patterned on the insulating layer and connected to the gallium oxide single crystal substrate through the necking effect of the growth space, so that the gallium oxide material can greatly reduce the defects in the gallium oxide thin film finally formed during the rapid melting growth process. The present invention solves the problems of low crystal quality and many film defects encountered in the current process of growing gallium oxide thin films. Through the rapid melting growth method, the defects in the crystal during the growth process are reduced, and a new idea and method for growing gallium oxide thin films are provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 Schematic diagram of growing a first insulating layer in a method for growing a high-quality gallium oxide thin film based on a rapid melting technique according to an embodiment of the present invention.

[0015] Figure 2 It is a schematic diagram of etching to obtain a growth space in a method for growing a high-quality gallium oxide film based on a rapid melting technology according to an embodiment of the present invention.

[0016] Figure 3 Schematic diagram of depositing gallium oxide in a method for growing high-quality gallium oxide thin films based on rapid melting technology according to an embodiment of the present invention.

[0017] Figure 4 It is a schematic diagram of photolithography etching of gallium oxide according to a method for growing high-quality gallium oxide thin film based on rapid melting technology according to an embodiment of the present invention.

[0018] Figure 5Schematic diagram of depositing a second insulating layer in a method for growing a high-quality gallium oxide thin film based on a rapid melting technique according to an embodiment of the present invention.

[0019] Figure 6 Schematic diagram of growing a gallium oxide film according to a method for growing a high-quality gallium oxide film based on a rapid melting technology according to an embodiment of the present invention. DETAILED DESCRIPTION

[0020] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0021] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0022] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0023] This scheme provides a method for growing high-quality gallium oxide thin films based on rapid melting technology, comprising the following steps:

[0024] S1: Select gallium oxide single crystal substrate;

[0025] S2: growing a first insulating layer on the gallium oxide single crystal substrate, and patterning the first insulating layer to form a first wafer having a growth space, wherein the growth space includes a neck region contacting the gallium oxide single crystal substrate and a lateral extension region connected to the neck region;

[0026] S3: depositing gallium oxide in the growth space of the first wafer, and photolithographically etching the gallium oxide to obtain a second wafer;

[0027] S4: depositing a second insulating layer on the second wafer to obtain a third wafer, wherein the second insulating layer covers gallium oxide, and the first insulating layer and the second insulating layer are made of the same insulating material;

[0028] S5: Melting and annealing the third wafer to remove the insulating layer on the plane where the gallium oxide is located to obtain a gallium oxide thin film.

[0029] This solution aims to solve the problems of complicated operation, high cost and poor film quality in the existing gallium oxide thin film growth methods, and provides a method for growing high-quality gallium oxide thin films based on rapid melting technology. The method utilizes low-pressure chemical vapor deposition (LPCVD) to deposit gallium oxide material in a growth space formed on a gallium oxide single crystal substrate, and utilizes the necking effect through the design of the growth space to terminate the defects caused by lattice mismatch. After rapid melting and annealing of the third wafer, a high-quality (defect-free) gallium oxide thin film is grown. The method has the advantages of simple manufacturing process and high quality of gallium oxide thin films.

[0030] In step S1, a high-purity gallium oxide single crystal substrate is selected, and the gallium oxide single crystal substrate is cleaned and dried.

[0031] Preferably, in step (1), the gallium oxide single crystal substrate is ultrasonically cleaned with acetone, isopropanol and deionized water for 5 minutes respectively, and then blown dry with a nitrogen gun. Further preferably, in step (1), the substrate is cleaned, and after organic cleaning, it is cleaned with piranha solution (concentrated H2SO4:H2O2=3:1) for 30 minutes to wash away dangling bonds, surface states and stubborn contamination on the surface of the substrate.

[0032] In this scheme, a high-purity gallium oxide single crystal substrate is selected as the substrate so that a high-quality gallium oxide film can be subsequently grown on the gallium oxide single crystal substrate. The high-purity single crystal substrate can ensure that the subsequently grown oxidant film has a high quality, and by cleaning and removing the particles, organic pollutants and other impurities on the surface, it can be avoided that these pollutants cause uneven growth of the gallium oxide film or introduce additional defects in the subsequent process steps. This step (1) is used to provide an ideal starting point for the subsequent growth of the gallium oxide film, so that the grown gallium oxide film has a higher crystal quality and better electrical properties.

[0033] like Figure 1 As shown, in step S2, a first insulating layer is grown on the gallium oxide single crystal substrate, wherein the insulating material of the first insulating layer is silicon nitride In some embodiments, a first insulating layer is deposited and grown on a gallium oxide single crystal substrate by low pressure chemical vapor deposition, and the first insulating layer covers a surface of the gallium oxide single crystal substrate.

[0034] In this scheme, silicon nitride is selected as the insulating material of the first insulating layer because silicon nitride is a good insulating material with good chemical stability and can remain stable at high temperatures, and has high hardness and mechanical strength to protect the underlying gallium oxide single crystal substrate from physical damage.

[0035] like Figure 2 As shown, in step S2, the first insulating layer is patterned to form a first wafer with a growth space.

[0036] The present solution performs photolithography and etching on the first insulating layer to form a growth space. Specifically, a layer of photoresist is uniformly coated on the first insulating layer, a mask alignment system is used to align a designed pattern with the photoresist, the photoresist is exposed to ultraviolet light through a mask, and after exposure, a developer is used to remove the exposed photoresist (if it is a positive photoresist), or the exposed photoresist is cured (if it is a negative photoresist), thereby leaving a desired pattern, and an etching technique is used to transfer the pattern to the first insulating layer through the photoresist as a mask. After etching is completed, a solvent or plasma treatment is used to remove the remaining photoresist to expose the growth space on the insulating layer.

[0037] In some embodiments, the etching of the first insulating layer is selected from one or more of inductively coupled plasma etching (ICP) and reactive ion etching (RIE).

[0038] In some embodiments, the first insulating layer is patterned to form a first wafer with a growth space, and the first wafer is cleaned. In some specific embodiments, hydrogen fluoride may be used to clean the first wafer.

[0039] It should be noted that in step (2), the insulating protective layer and the insulating shape layer are obtained after the first insulating layer is patterned. Specifically, the first wafer includes a gallium oxide single crystal substrate, an insulating protective layer and an insulating shape layer deposited and grown on the gallium oxide single crystal substrate, wherein the insulating protective layer and the insulating shape layer are obtained after the first insulating layer is patterned, and the insulating protective layer is disposed on both sides of the growth space, and the insulating shape layer cooperates with the insulating protective layer to form the growth space.

[0040] It should be noted that the insulating protection layers deposited on the surface of the gallium oxide single crystal substrate and the insulating shape layer deposited on the surface of the gallium oxide single crystal substrate are spaced apart to expose part of the gallium oxide single crystal substrate, the heights of the insulating protection layers on both sides are higher than the height of the insulating shape layer, the neck region of the growth space is limited by the region between the insulating protection layers and the insulating shape layer, the lateral expansion region of the growth space is limited by the upper surfaces of the insulating protection layers on both sides and the insulating shape layer, and the neck region and the lateral expansion region are conductive.

[0041] In the embodiments of the present solution, the width of the neck region of the growth space is 2.2-2.7 μm, the width of the lateral expansion region is 10-200 μm, and the thickness of the lateral expansion region is 160-200 nm.

[0042] In some specific embodiments, the growth space formed by the present scheme is an inverted "L"-shaped space, the neck region of the growth space is a vertical region perpendicular to the gallium oxide single crystal substrate, the lateral extension region is a horizontal region parallel to the gallium oxide single crystal substrate, and the lateral region is connected to the top of the vertical region and is vertically arranged to form a connected growth space.

[0043] like Figure 3 As shown, in step (3), gallium oxide is deposited in the growth space of the first wafer by low pressure chemical vapor deposition.

[0044] Specifically, a first wafer and a gallium source are placed in a reaction chamber and evacuated, an inert gas is introduced into the reaction chamber to adjust the pressure, the reaction chamber is heated up, and then an inert gas is transported into the reaction chamber to adjust the pressure of the reaction chamber to a low pressure state, and then an oxygen source is introduced to deposit gallium oxide in the growth space of the first wafer by low-pressure chemical vapor deposition.

[0045] In some embodiments, the gallium source is selected as metal gallium particles, trimethyl gallium or diethyl gallium, and the purity of the gallium source is controlled to be 99.999%. The quality of the deposited and grown gallium oxide film is improved by controlling the purity of the gallium source. When the reaction chamber is selected as a tubular furnace cavity, the gallium source and the first wafer are placed in the tubular furnace cavity respectively.

[0046] In some embodiments, the temperature of the reaction chamber is raised to 880-920° C., preferably, the temperature of the reaction chamber is 900° C. Such a temperature can be beneficial to promote the deposition of the gallium oxide film and ensure the quality of the film.

[0047] In some embodiments, the inert gas is selected from nitrogen, argon, or a mixture of nitrogen and argon.

[0048] In the step of "introducing inert gas into the reaction chamber to adjust the pressure", the pressure of the reaction chamber is adjusted to 65-75 Torr. Preferably, the pressure of the reaction chamber is controlled to 70 Torr. In this solution, the gas flow rate of the inert gas is 400-1000 sccm.

[0049] In the step of "transporting inert gas into the reaction chamber to adjust the pressure of the reaction chamber to a low pressure state", the inert gas is introduced to adjust the pressure of the reaction chamber to 0.5~1.5 Torr. Preferably, the pressure of the reaction chamber is controlled to be 1 Torr. In this scheme, the gas flow rate of the inert gas is 50sccm.

[0050] In the step of “introducing an oxygen source”, the gas flow rate of the oxygen source is 7 sccm.

[0051] Since the first wafer with growth space has been obtained by patterning the first insulating layer in this solution, the gallium oxide deposited and grown by low-pressure chemical vapor deposition only occurs in the growth space, but the generated gallium oxide may have some unexpected deposition, for example, gallium oxide may be deposited in places where it should not be deposited or the deposited gallium oxide may be thicker than expected. Figure 4 As shown, in this scheme, the deposited and grown gallium oxide is photolithographically etched to obtain a second wafer, so that unnecessary gallium oxide can be accurately removed by photolithography and etching, ensuring that the final gallium oxide film structure meets the design shape requirements.

[0052] In some embodiments, one or more of inductively coupled plasma etching (ICP) and reactive ion etching (RIE) are used to etch gallium oxide to obtain the second wafer.

[0053] like Figure 5 As shown, in step S4, a second insulating layer is deposited on the second wafer to obtain a third wafer, wherein the second insulating layer covers gallium oxide.

[0054] In some embodiments, the second insulating layer is deposited on the second wafer by low pressure chemical vapor deposition. In a specific embodiment of this solution, the insulating material of the second insulating layer is the same as the insulating material of the first insulating layer. .

[0055] In addition, the height of the insulating protective layer on both sides of the growth space in the second wafer is higher than the height of the gallium oxide, thereby forming a recessed space between the top surface of the gallium oxide and the insulating protective layer, and the second insulating layer is deposited and grown in the recessed space to cover the surface of the gallium oxide. In some specific embodiments, the height of the second insulating layer is equal to the height of the insulating protective layer, and at this time, the gallium oxide in the growth space is completely enclosed in the closed space formed by the first insulating layer and the second insulating layer.

[0056] Specifically, the first wafer includes a gallium oxide single crystal substrate, an insulating protection layer deposited and grown on the gallium oxide single crystal substrate, and an insulating shape layer, wherein the insulating protection layer and the insulating shape layer are obtained after imaging of the first insulating layer, and the insulating protection layer is disposed on both sides of the growth space, and the insulating shape layer cooperates with the insulating protection layer to form the growth space.

[0057] like Figure 6 As shown, in step S5, the third wafer is melted and annealed to remove the insulating layer on the plane where the gallium oxide film is located to obtain the gallium oxide film.

[0058] In some embodiments, the third wafer is placed in a rapid thermal processing chamber and rapidly heated to a high temperature to melt gallium oxide and then annealed. In some specific embodiments, the third wafer is placed in a rapid thermal processing chamber and heated to 1850-2000°C at a rate of 100-120°C / s, then kept for 1-3s, and then the heating lamp is turned off for annealing. Specifically, the third wafer is placed in a rapid thermal processing chamber and heated to 1900°C at a rate of 100°C / s, then kept for 1s, and then the heating lamp is turned off for annealing. After the heating lamp is turned off, annealing is performed and the third wafer is allowed to cool naturally.

[0059] In some embodiments, HF is used to remove the insulating layer on the plane where the gallium oxide film is located. Specifically, the insulating protection layer and the second insulating layer are removed to expose the gallium oxide film.

[0060] It should be noted that when the third wafer is rapidly melted, the gallium oxide deposited in the growth space is melted into a gallium oxide solution, and the gallium oxide solution contacts the exposed gallium oxide single crystal substrate through the neck region of the growth space. At this time, the gallium oxide single crystal substrate serves as a seed crystal, and due to the necking effect formed by the neck region and the lateral expansion region of the growth space, the defects in the growth process of the gallium oxide solution can reach the top surface of the gallium oxide film and terminate there within a very short lateral distance, resulting in a very high quality of the gallium oxide film formed except near the seed crystal and the neck region, greatly reducing the defects in the gallium oxide film. In addition, since the first insulating layer and the second insulating layer surround the growth space, the first insulating layer and the second insulating layer act as a micro-crucible to keep the gallium oxide liquid in the growth space and prevent it from flowing at will.

[0061] In order to verify the quality of the gallium oxide film grown by this scheme, the following examples are designed:

[0062] Select a high-purity gallium oxide single crystal substrate, clean and dry the gallium oxide single crystal substrate, and grow silicon nitride on the gallium oxide substrate by LPCVD method The insulating layer is then patterned by ultraviolet lithography to expose the growth space on the insulating layer, forming an insulating protection layer and an insulating pattern layer, which form a neck region and a lateral expansion region of the growth space, the width of the neck region is 2.5 μm, the width of the lateral expansion region is 20 μm, and the thickness is 180 nm. The growth space formed by this scheme is an inverted "L"-shaped space, the neck region of the growth space is a vertical region perpendicular to the gallium oxide single crystal substrate, the lateral expansion region is a horizontal region parallel to the gallium oxide single crystal substrate, and the lateral region is connected to the top of the vertical region and is vertically arranged to form a connected growth space, gallium oxide is deposited in the growth space by LPCVD, and then deposited The insulating layer is melted and annealed rapidly. When the wafer is melted rapidly, the gallium oxide deposited in the growth space is melted into a gallium oxide solution. The gallium oxide solution contacts the exposed gallium oxide single crystal substrate through the neck region of the growth space. At this time, the gallium oxide single crystal substrate serves as a seed crystal. Due to the necking effect formed by the neck region and the lateral expansion region of the growth space, the defects in the growth process of the gallium oxide solution can reach the top surface of the gallium oxide film and terminate there within a very short lateral distance, resulting in a very high quality of the gallium oxide film formed except near the seed crystal and the neck region, greatly reducing the defects in the gallium oxide film. In addition, since the first insulating layer and the second insulating layer surround the growth space, the first insulating layer and the second insulating layer act as a micro-crucible to keep the gallium oxide liquid in the growth space and prevent it from flowing at will. Finally, HF is used to remove the insulating layer on the plane where the gallium oxide film is located to obtain the gallium oxide film.

[0063] The obtained gallium oxide film was subjected to XRD scanning. Normally, the FWHM of gallium oxide grown homoepitaxially by LPCVD is about 80 arc seconds, the FWHM of gallium oxide grown homoepitaxially by MOCVD is about 60-78 arc seconds, the FWHM of gallium oxide grown homoepitaxially by MBE is about 72 arc seconds, and the FWHM of the epitaxial film grown by this method is about 40 arc seconds, which proves that the quality of the gallium oxide film grown by this scheme is higher than that of other general methods.

[0064] The present invention is not limited to the above-mentioned optimal implementation mode. Anyone can derive other various forms of products under the inspiration of the present invention. However, no matter what changes are made in the shape or structure, all technical solutions that are the same or similar to those of the present application fall within the protection scope of the present invention.

Claims

1. A method for growing high-quality gallium oxide thin films based on rapid melting technology, characterized in that: The following steps are involved: S1: Select gallium oxide single crystal substrate; S2: growing a first insulating layer on the gallium oxide single crystal substrate, and patterning the first insulating layer to form a first wafer having a growth space, wherein the growth space includes a neck region contacting the gallium oxide single crystal substrate and a lateral extension region connected to the neck region, wherein the width of the neck region is 2.5 μm, the width of the lateral extension region is 20 μm, and the thickness is 180 nm, and the formed growth space is an inverted "L"-shaped space, the neck region of the growth space is a vertical region perpendicular to the gallium oxide single crystal substrate, the lateral extension region is a horizontal region parallel to the gallium oxide single crystal substrate, and the horizontal region is connected to the top of the vertical region and is vertically arranged to form a connected growth space; S3: depositing gallium oxide in the growth space of the first wafer by low pressure chemical vapor deposition, and photolithographically etching the gallium oxide to obtain a second wafer; S4: depositing a second insulating layer on the second wafer to obtain a third wafer, wherein the second insulating layer covers gallium oxide, and the first insulating layer and the second insulating layer are made of the same insulating material; S5: Melting and annealing the third wafer to remove the insulating layer on the plane where the gallium oxide is located to obtain a gallium oxide thin film.

2. The method for growing high-quality gallium oxide thin films based on rapid melting technology according to claim 1, characterized in that: The first wafer includes a gallium oxide single crystal substrate, an insulating protection layer and an insulating shape layer deposited and grown on the gallium oxide single crystal substrate, wherein the insulating protection layer and the insulating shape layer are obtained after imaging of the first insulating layer, and the insulating protection layer is disposed on both sides of the growth space, and the insulating shape layer cooperates with the insulating protection layer to form the growth space.

3. The method for growing high-quality gallium oxide thin films based on rapid melting technology according to claim 1, characterized in that: The insulating protective layers deposited on the surface of the gallium oxide single crystal substrate and disposed on both sides and the insulating shaped layer deposited on the surface of the gallium oxide single crystal substrate are spaced apart to expose part of the gallium oxide single crystal substrate, the heights of the insulating protective layers on both sides are higher than the height of the insulating shaped layer, the neck area of ​​the growth space is limited by the area between the insulating protective layers and the insulating shaped layer, and the lateral expansion area of ​​the growth space is limited by the upper surfaces of the insulating protective layers on both sides and the insulating shaped layer.

4. The method for growing high-quality gallium oxide thin films based on rapid melting technology according to claim 1, characterized in that: The third wafer is placed in a rapid thermal processing chamber and heated to 1850~2000°C at a rate of 100~120°C / s and then kept for 1~3s before turning off the heating lamp for annealing.

5. The method for growing high-quality gallium oxide thin films based on rapid melting technology according to claim 1, characterized in that: The insulating material of the first insulating layer and the second insulating layer is silicon nitride .

6. The method for growing high-quality gallium oxide thin films based on rapid melting technology according to claim 1, characterized in that: Gallium oxide is deposited in the growth space of the first wafer by low pressure chemical vapor deposition.

7. The method for growing high-quality gallium oxide thin films based on rapid melting technology according to claim 6, characterized in that: The first wafer and the gallium source are placed in a reaction chamber and evacuated, an inert gas is introduced into the reaction chamber to adjust the pressure, the reaction chamber is heated up, and then an inert gas is transported into the reaction chamber to adjust the pressure of the reaction chamber to a low pressure state, and then an oxygen source is introduced to deposit gallium oxide in the growth space of the first wafer by low-pressure chemical vapor deposition.

8. The method for growing high-quality gallium oxide thin films based on rapid melting technology according to claim 7, characterized in that: In the step of "introducing inert gas into the reaction chamber to adjust the pressure", the inert gas introduced is adjusted to a pressure of 65-75 Torr; in the step of "transporting inert gas into the reaction chamber to adjust the pressure of the reaction chamber to a low pressure state", the inert gas introduced is adjusted to a pressure of 0.5-1.5 Torr.

9. The method for growing high-quality gallium oxide thin films based on rapid melting technology according to claim 1, characterized in that: A first insulating layer is deposited and grown on a gallium oxide single crystal substrate by low-pressure chemical vapor deposition, and a second insulating layer is deposited on a second wafer by low-pressure chemical vapor deposition.

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