Radio frequency push-pull power amplifier, circuit and radio frequency front-end module

Abstract

The invention discloses a radio frequency push-pull power amplifier which comprises a substrate, a radio frequency push-pull power amplification chip arranged on the substrate and a first balun arranged on the substrate. The radio frequency push-pull power amplification chip comprises a first differential amplification transistor, a second differential amplification transistor and a first capacitor, and the output end of the first differential amplification transistor is connected with the first input end of the first balun; the output end of the second differential amplification transistor is connected with the second input end of the first balun; the first end of the first capacitor is connected to a third bonding pad of the radio frequency push-pull power amplification chip, the third bonding pad is bonded to the midpoint of the primary coil of the first balun through a lead, and the second end of the first capacitor is grounded. According to the technical scheme, the purposes of suppressing the common-mode signal of the radio frequency push-pull power amplifier and adjusting the impedance point of the even harmonic of the radio frequency push-pull power amplifier can be achieved, and then the linearity of a radio frequency push-pull power amplifier chip is improved.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency technology, and in particular to a radio frequency push-pull power amplifier, a circuit and a radio frequency front-end module. Background Art

[0002] With the maturity of short-distance, low-power wireless data transmission technology, wireless network technology is increasingly being applied to new fields. Compared with wired communication, wireless communication has a series of advantages such as no need to lay open wires and convenient use, and occupies an important position in the field of modern communications.

[0003] At present, in order to ensure the bandwidth performance index when designing a push-pull power amplifier, the linearity of the push-pull power amplifier circuit is often deteriorated. Therefore, how to improve the linearity of the push-pull power amplifier circuit while ensuring the bandwidth performance index has become a problem that needs to be solved urgently. Summary of the invention

[0004] The embodiments of the present invention provide a radio frequency push-pull power amplifier, a circuit and a radio frequency front-end module to solve the problem of poor linearity of the radio frequency push-pull power amplifier.

[0005] A radio frequency push-pull power amplifier comprises a substrate, a radio frequency push-pull power amplifier chip arranged on the substrate, and a first balun arranged on the substrate; the radio frequency push-pull power amplifier chip comprises a first differential amplifier transistor, a second differential amplifier transistor and a first capacitor, the output end of the first differential amplifier transistor is connected to the first input end of the first balun; the output end of the second differential amplifier transistor is connected to the second input end of the first balun; the first end of the first capacitor is connected to the third pad of the radio frequency push-pull power amplifier chip, the third pad is bonded to the midpoint of the primary coil of the first balun through a wire, and the second end of the first capacitor is grounded.

[0006] Furthermore, the output end of the first differential amplifier transistor is connected to the first pad of the RF push-pull power amplifier chip, and the first pad is wire-bonded to the first input end of the first balun; the output end of the second differential amplifier transistor is connected to the second pad of the RF push-pull power amplifier chip, and the second pad is wire-bonded to the second input end of the first balun.

[0007] Furthermore, the RF push-pull power amplifier also includes a feeding power supply terminal arranged on the substrate; the output end of the first differential amplifier transistor is connected to the fourth pad of the push-pull power amplifier chip, and the fourth pad is bonded to the feeding power supply terminal through a wire bond; the output end of the second differential amplifier transistor is connected to the fifth pad of the push-pull power amplifier chip, and the fifth pad is bonded to the feeding power supply terminal through a wire bond.

[0008] Furthermore, the RF push-pull power amplifier also includes a second capacitor, a first end of the second capacitor is connected to the feeding power supply end, and a second end of the second capacitor is connected to the ground end.

[0009] Furthermore, the first capacitor and / or the second capacitor is an adjustable capacitor.

[0010] Furthermore, the primary coil of the first balun includes a first primary coil segment and a second primary coil segment, the first pad is wire-bonded to the first end of the first primary coil segment, the second end of the first primary coil segment is connected to the first end of the second primary coil segment, the second pad is wire-bonded to the second end of the second primary coil segment, the first end of the first capacitor is connected to the third pad of the RF push-pull power amplifier chip, the third pad is wire-bonded between the first primary coil segment and the second primary coil segment, and the second end of the first capacitor is grounded.

[0011] Further, the lead wire between the first capacitor and the primary coil forms a first equivalent inductance, and one half of the primary coil forms a second equivalent inductance; the first capacitor, the first equivalent inductance and the second equivalent inductance are connected in series to form a first resonant circuit;

[0012] A lead wire between the second capacitor and the output terminal of the first differential amplifier transistor forms a third equivalent inductor; or a lead wire between the second capacitor and the output terminal of the second differential amplifier transistor forms the third equivalent inductor;

[0013] The second capacitor and the third equivalent inductor are connected in series to form a second resonant circuit;

[0014] The first resonant circuit and the second resonant circuit have different resonant frequency points.

[0015] Further, the first resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier, and the second resonant circuit is configured to resonate at an even harmonic frequency; or, the first resonant circuit is configured to resonate at an even harmonic frequency, and the second resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier.

[0016] Furthermore, the even harmonic frequency point is a second-order harmonic frequency point.

[0017] Furthermore, the length of the lead between the first capacitor and the first balun is negatively correlated with the operating frequency of the RF push-pull power amplifier.

[0018] Further, the first differential amplifier transistor is a BJT tube, including a base, a collector and an emitter, the base of the first differential amplifier transistor receives the input first RF input signal, the collector of the first differential amplifier transistor is connected to the first pad of the RF push-pull power amplifier chip, the first pad is wire-bonded to the first input terminal of the first balun, and the emitter of the first differential amplifier transistor is grounded;

[0019] The second differential amplifier transistor is a BJT tube, including a base, a collector and an emitter. The base of the second differential amplifier transistor receives the input second RF input signal, the collector of the second differential amplifier transistor is connected to the second pad of the RF push-pull power amplifier chip, the second pad is wire-bonded to the second input terminal of the first balun, and the emitter of the second differential amplifier transistor is grounded.

[0020] Further, the first end of the secondary coil of the first balun outputs an amplified first RF output signal, and the second end of the secondary coil outputs an amplified second RF output signal; or, the first end of the secondary coil of the first balun outputs an amplified RF output signal, and the second end of the secondary coil is grounded.

[0021] A radio frequency push-pull power amplifier circuit comprises a first differential amplifier transistor, a second differential amplifier transistor, a first capacitor, a first inductor, a second inductor, a third inductor and a first balun; the output end of the first differential amplifier transistor is connected to the first input end of the first balun through the first inductor, and the output end of the second differential amplifier transistor is connected to the second input end of the first balun through the second inductor; the first end of the first capacitor is connected to the midpoint of the primary coil of the first balun through the third inductor, and the second end of the first capacitor is grounded;

[0022] The first capacitor and the third inductor are connected in series with the first inductor or the second inductor to form a first resonant circuit, and the first resonant circuit is configured to resonate at an even harmonic frequency point, or the first resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier.

[0023] Furthermore, the RF push-pull power amplifier also includes a feeding power supply terminal and a second capacitor; the output terminal of the first differential amplifier transistor is connected to the feeding power supply terminal through a fourth inductor; the output terminal of the second differential amplifier transistor is connected to the feeding power supply terminal through a fifth inductor; the first end of the second capacitor is connected to the feeding power supply terminal, and the second end of the second capacitor is connected to the ground terminal;

[0024] The second capacitor and the fourth inductor or the fifth inductor form a second resonant circuit, and the second resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier, or the second resonant circuit is configured to resonate at an even harmonic frequency.

[0025] A radio frequency front-end module comprises the radio frequency push-pull power amplifier mentioned above, or comprises the radio frequency push-pull power amplifier circuit mentioned above.

[0026] The above-mentioned RF push-pull power amplifier, circuit and RF front-end module, the RF push-pull power amplifier includes a substrate, an RF push-pull power amplifier chip arranged on the substrate, and a first balun arranged on the substrate; the RF push-pull power amplifier chip includes a first differential amplifier transistor, a second differential amplifier transistor and a first capacitor, the output end of the first differential amplifier transistor is connected to the first pad of the RF push-pull power amplifier chip, the first pad is connected to the first input end of the first balun, the output end of the second differential amplifier transistor is connected to the second pad of the RF push-pull power amplifier chip, and the second pad is connected to the second input end of the first balun; the first end of the first capacitor is connected to the third pad of the RF push-pull power amplifier chip, the third pad is wire bonded to the midpoint of the primary coil of the first balun, and the second end of the first capacitor is grounded. In this embodiment, the first end of the first capacitor in the RF push-pull power amplifier chip is connected to the third pad of the RF push-pull power amplifier chip, and the third pad is bonded to the midpoint of the primary coil of the first balun through a wire, and the second end of the first capacitor is grounded, so that the first capacitor, the equivalent inductance of the wire connecting the third pad and the primary coil, and the equivalent inductance of half of the primary coil cooperate to form a first harmonic circuit. By making the first harmonic circuit resonate at different harmonic frequency points, the harmonic signal and the common-mode signal of the RF push-pull power amplifier can be tuned, that is, the common-mode signal of the RF push-pull power amplifier is suppressed, and the impedance point of the even harmonics of the RF push-pull power amplifier is adjusted, thereby improving the linearity of the RF push-pull power amplifier chip; at the same time, by setting the first capacitor in the RF push-pull power amplifier chip, the occupied area of ​​the RF push-pull power amplifier can be reduced, the quality factor of the RF push-pull power amplifier can be improved, and the loss caused by the RF push-pull power amplifier can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0028] Figure 1is a circuit diagram of a radio frequency push-pull power amplifier in one embodiment of the present invention;

[0029] Figure 2 is another circuit diagram of a radio frequency push-pull power amplifier in one embodiment of the present invention;

[0030] Figure 3 is another circuit diagram of a radio frequency push-pull power amplifier in one embodiment of the present invention;

[0031] Figure 4 is another circuit diagram of a radio frequency push-pull power amplifier in one embodiment of the present invention;

[0032] Figure 5 is another circuit diagram of a radio frequency push-pull power amplifier in one embodiment of the present invention;

[0033] Figure 6 is a circuit diagram of a radio frequency push-pull power amplifier circuit in one embodiment of the present invention;

[0034] Figure 7 1 is another circuit diagram of a radio frequency push-pull power amplifier circuit in one embodiment of the present invention.

[0035] In the figure: 10, substrate; 20, RF push-pull power amplifier chip; 21, first differential amplifier transistor; 22, second differential amplifier transistor; 30, first balun; 31, primary coil; a, first solder pad; b, second solder pad; c, third solder pad; d, fourth solder pad; e, fifth solder pad. DETAILED DESCRIPTION

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] It should be understood that the present invention can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present invention to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0038] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there may be no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0039] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0040] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present invention. When used herein, the singular forms "a", "an" and " / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising" when used in this specification determine the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0041] In order to fully understand the present invention, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present invention. The preferred embodiments of the present invention are described in detail below, but in addition to these detailed descriptions, the present invention may also have other implementations.

[0042] This embodiment provides a radio frequency push-pull power amplifier, such as Figure 1 As shown, it includes a substrate 10, an RF push-pull power amplifier chip 20 arranged on the substrate 10, and a first balun 30 arranged on the substrate 10; the RF push-pull power amplifier chip 20 includes a first differential amplifier transistor 21, a second differential amplifier transistor 22 and a first capacitor C21, and the output end of the first differential amplifier transistor 21 is connected to the first input end of the first balun 30. Preferably, the output end of the first differential amplifier transistor 21 is connected to the first pad a of the RF push-pull power amplifier chip 20, and the first pad a is connected to the first input end of the first balun 30. Optionally, the first pad a is bonded to the first input end of the first balun 30 through a wire S1. The output end of the second differential amplifier transistor 22 is connected to the second input end of the first balun 30. Preferably, the output end of the second differential amplifier transistor 22 is connected to the second pad b of the RF push-pull power amplifier chip 20, and the second pad b is connected to the second input end of the first balun 30. Optionally, the second pad b is bonded to the second input end of the first balun 30 through a lead S2; the first end of the first capacitor C21 is connected to the third pad c of the RF push-pull power amplifier chip 20, and the third pad c is bonded to the midpoint of the primary coil 31 of the first balun 30 through a lead S3, and the second end of the first capacitor C21 is grounded.

[0043] The midpoint of the primary coil 31 is the center position of the primary coil 31, and the distance between the center position and the first input end of the primary coil 31 is equal to the distance between the center position and the second input end of the primary coil 31. For example, the midpoint of the primary coil 31 may be the position on the primary coil 31 where the center tap of the first balun 30 is to be connected.

[0044] In a specific embodiment, the RF push-pull power amplifier includes a substrate 10 and a RF push-pull power amplifier chip 20 disposed on the substrate 10. The push-pull power amplifier chip is a bare die that is not packaged. That is, all components of the push-pull power amplifier chip, such as the first differential amplifier transistor 21, the second differential amplifier transistor 22, and the first capacitor C21, are integrated on the same bare die.

[0045] Among them, the first differential amplifier transistor 21 and the second differential amplifier transistor 22 can be BJT transistors or field effect transistors (FETs). Optionally, the first differential amplifier transistor 21 includes at least one BJT transistor (for example, an HBT transistor) or at least one field effect transistor. Exemplarily, the first differential amplifier transistor 21 can be formed by connecting a plurality of BJT transistors in parallel. The second differential amplifier transistor 22 includes at least one BJT transistor (for example, an HBT transistor) or at least one field effect transistor. Exemplarily, the second differential amplifier transistor 22 can be formed by connecting a plurality of BJT transistors in parallel.

[0046] In a specific embodiment, the first differential amplifier transistor 21 is configured to amplify the first RF input signal and output the first RF amplified signal, and the first RF amplified signal is coupled to the first end of the primary coil 31 of the first balun 30. The second differential amplifier transistor 22 is configured to amplify the second RF input signal and output the second RF amplified signal, and the second RF amplified signal is coupled to the second end of the primary coil 31 of the first balun 30. The first RF input signal can be the RF signal output after amplification by the corresponding pre-amplifier circuit, or it can be one of the balanced RF signals obtained by converting the unbalanced input RF signal. Similarly, the second RF input signal can also be the RF signal output after amplification by the corresponding pre-amplifier circuit, or it can be one of the balanced RF signals obtained by converting the unbalanced input RF signal.

[0047] It can be understood that the first differential amplifier transistor 21 and the second differential amplifier transistor 22 are any amplifier stage in the RF push-pull power amplifier chip 20, and the amplifier stage can be any amplifier stage in the driving stage, the intermediate stage or the output stage.

[0048] In a specific embodiment, the RF push-pull power amplifier chip 20 further includes a pre-stage conversion circuit (not shown), for example, the pre-stage conversion circuit may be a pre-stage conversion balun. The pre-stage conversion balun is used to convert an unbalanced RF input signal into a balanced first RF input signal and a second RF input signal, and input the first RF input signal to the input end of the first differential amplifier transistor 21, and input the second RF input signal to the input end of the second differential amplifier transistor 22.

[0049] In a specific embodiment, the output end of the first differential amplifier transistor 21 is connected to the first pad a of the RF push-pull power amplifier chip 20, and the first pad a is bonded to the first input end of the first balun 30 through the lead S1. The output end of the second differential amplifier transistor 22 is connected to the second pad b of the RF push-pull power amplifier chip 20, and the second pad b is bonded to the second input end of the first balun 30 through the lead S2. In this way, the first RF amplified signal output by the first differential amplifier transistor 21 can be coupled to the first end of the primary coil 31 of the first balun 30, and the second RF amplified signal output by the second differential amplifier transistor 22 can be coupled to the second end of the primary coil 31 of the first balun 30.

[0050] In a specific embodiment, the first pad a can be bonded to the first input terminal of the first balun 30 through one or more leads S1, and the second pad b can be bonded to the second input terminal of the first balun 30 through one or more leads S2, thereby realizing the electrical connection between the first differential amplifier transistor 21 and the second differential amplifier transistor 22 and the first balun 30.

[0051] In a specific embodiment, based on the above embodiment, the first end of the first capacitor C21 in the RF push-pull power amplifier chip 20 is connected to the third pad c of the RF push-pull power amplifier chip 20, and the third pad c is bonded to the midpoint of the primary coil 31 of the first balun 30 through the lead S3, and the second end of the first capacitor C21 is grounded. In this way, the first capacitor C21 in the RF push-pull power amplifier chip 20 can form a first resonant circuit with the inductance equivalent to the lead S3 connecting the third pad c and the primary coil 31 and the inductance equivalent to one-half of the primary coil 31. By resonating the first resonant circuit at the even harmonic frequency point, the even harmonic signal in the RF push-pull power amplifier chip 20 can be resonated to the ground, thereby achieving the purpose of adjusting the impedance point of the even harmonics. It should be noted that, since the lead S3 connecting the third pad c and the primary coil 31 can be equivalent to a first equivalent inductor, one half of the primary coil 31 can be equivalent to a second equivalent inductor, the first equivalent inductor and the second equivalent inductor can form an LC series resonant circuit with the first capacitor C21. Therefore, without the need to add additional inductance, the even harmonic signal in the RF push-pull power amplifier chip 20 can be resonated to the ground. It should be noted that when the odd harmonic signal in the RF push-pull power amplifier chip 20 passes through the first balun 30, the odd harmonic signal received by the first input terminal of the first balun 30 and the odd harmonic signal received by the second input terminal of the first balun 30 cancel each other out at the midpoint of the primary coil 31. At this time, the midpoint of the primary coil 31 is equivalent to a virtual ground for the odd harmonic signal, that is, there is usually no odd harmonic signal at the midpoint of the primary coil 31, and only an even harmonic signal exists. Therefore, the present application achieves the purpose of adjusting the impedance point of the even harmonic by resonating the first resonant circuit formed by the first capacitor C21, the third pad c, the lead S3 of the primary coil 31 and one-half of the primary coil 31 at the even harmonic frequency point. At the same time, if the first resonant circuit formed by the first capacitor C21, the third pad c, the lead S3 of the primary coil 31 and one-half of the primary coil 31 is resonated at the fundamental frequency point, the purpose of suppressing the common mode signal can be achieved.

[0052] In a specific embodiment, if Figure 2As shown, the primary coil 31 of the first balun 30 includes a first primary coil 31 segment and a second primary coil 31 segment, the first pad a is wire-bonded to the first end of the first primary coil 31 segment, the second end of the first primary coil 31 segment is connected to the first end of the second primary coil 31 segment, the second pad b is wire-bonded to the second end of the second primary coil 31 segment, the first end of the first capacitor is connected to the third pad c of the RF push-pull power amplifier chip 20, the third pad c is wire-bonded between the first primary coil 31 segment and the second primary coil 31 segment, and the second end of the first capacitor is grounded. It should be noted that the lengths of the first primary coil 31 segment and the second primary coil 31 segment are equal, that is, the connection node between the first primary coil 31 segment and the second primary coil 31 segment is the midpoint of the primary coil 31. In this embodiment, the first capacitor C21 in the RF push-pull power amplifier chip 20 can form a first resonant circuit with the lead S3 connecting the third pad c and the primary coil 31 and the first primary coil 31 segment (or the second primary coil 31 segment). By resonating the first resonant circuit at the even harmonic frequency point, the impedance point of the even harmonic can be adjusted, thereby improving the linearity of the push-pull power amplifier.

[0053] In a specific embodiment, the even harmonic signal can be at least one of a second-order harmonic signal, a fourth-order harmonic signal and a sixth-order harmonic signal. Preferably, since the second-order harmonic signal has a greater impact on the performance of the RF push-pull power amplifier chip 20, the even harmonic signal in this embodiment is mainly a second-order harmonic signal. In this example, by connecting the first end of the first capacitor C21 in the RF push-pull power amplifier chip 20 to the third pad c of the RF push-pull power amplifier chip 20, and then bonding the third pad c to the midpoint of the primary coil 31 of the first balun 30 through the lead S3, and grounding the second end of the first capacitor C21, the first capacitor, the equivalent inductance of the lead connecting the third pad c and the primary coil 31, and the equivalent inductance of half the primary coil 31 can be coordinated to form a first harmonic circuit. By making the first harmonic circuit resonate at different harmonic frequency points, for example, making the first harmonic circuit resonate at the fundamental frequency point, the purpose of suppressing the common-mode signal of the RF push-pull power amplifier is achieved, and the first harmonic circuit is resonated at the even harmonic frequency point to achieve the purpose of adjusting the impedance point of the even harmonics of the RF push-pull power amplifier; thereby improving the linearity of the RF push-pull power amplifier.

[0054] Furthermore, since the first capacitor C1 is arranged on the RF push-pull power amplifier chip 20, the first capacitor C21 arranged in the RF push-pull power amplifier chip 20 has the characteristics of small size and high Q (quality factor) value. In this embodiment, by connecting the first end of the first capacitor C21 in the RF push-pull power amplifier chip 20 to the third pad c of the RF push-pull power amplifier chip 20, and then bonding the third pad c to the midpoint of the primary coil 31 of the first balun 30 through the lead S3, and grounding the second end of the first capacitor C21, it is not only possible to adjust the impedance point of the even harmonics of the RF push-pull power amplifier, improve the linearity of the RF push-pull power amplifier chip 20, but also reduce the occupied area of ​​the RF push-pull power amplifier and reduce the loss of the RF push-pull power amplifier.

[0055] In a specific embodiment, the resonant frequency point of the first resonant circuit formed by the first capacitor C21, the lead wire S3 connecting the third pad c and the primary coil 31, and one-half of the primary coil 31 can be configured according to actual needs to select and suppress even harmonic signals. For example, the resonant frequency point of the formed first resonant circuit can be configured by configuring the capacitance value of the first capacitor C21, the length of the lead wire S3 connecting the third pad c and the primary coil 31, or the number of turns of the primary coil 31.

[0056] In a specific embodiment, the third pad c may be bonded to the midpoint of the primary coil 31 of the first balun 30 through one or more wires S3 , thereby electrically connecting the first capacitor C21 to the midpoint of the first balun 30 .

[0057] In this embodiment, the RF push-pull power amplifier includes a substrate 10, an RF push-pull power amplifier chip 20 arranged on the substrate 10, and a first balun 30 arranged on the substrate 10; the RF push-pull power amplifier chip 20 includes a first differential amplifier transistor 21, a second differential amplifier transistor 22 and a first capacitor C21, the output end of the first differential amplifier transistor 21 is connected to the first pad a of the RF push-pull power amplifier chip 20, the first pad a is bonded to the first input end of the first balun 30 through a lead S1, the output end of the second differential amplifier transistor 22 is connected to the second pad b of the RF push-pull power amplifier chip 20, and the second pad b is bonded to the second input end of the first balun 30 through a lead S2; the first end of the first capacitor C21 is connected to the third pad c of the RF push-pull power amplifier chip 20, the third pad c is bonded to the midpoint of the primary coil 31 of the first balun 30 through a lead S3, and the second end of the first capacitor C21 is grounded. In this embodiment, the first end of the first capacitor C21 in the RF push-pull power amplifier chip 20 is connected to the third pad c of the RF push-pull power amplifier chip 20, and the third pad c is bonded to the midpoint of the primary coil 31 of the first balun 30 through the lead S3, and the second end of the first capacitor C21 is grounded, so that the first capacitor C21 can cooperate with the lead S3 connecting the third pad c and the primary coil 31 and one-half of the primary coil 31, so as to adjust the impedance point of the even harmonics of the RF push-pull power amplifier, thereby improving the linearity of the RF push-pull power amplifier chip 20; at the same time, since the first capacitor C21 in the RF push-pull power amplifier chip 20 has the characteristics of small size and high Q (quality factor) value, the first capacitor C21 in the RF push-pull power amplifier chip 20 can also reduce the occupied area of ​​the RF push-pull power amplifier and reduce the loss of the RF push-pull power amplifier.

[0058] In one embodiment, if Figure 3 As shown, the RF push-pull power amplifier also includes a feeding power supply terminal VCC arranged on the substrate 10; the output end of the first differential amplifier transistor 21 is connected to the fourth pad d of the push-pull power amplifier chip, and the fourth pad d is bonded to the feeding power supply terminal VCC through the lead S4; the output end of the second differential amplifier transistor 22 is connected to the fifth pad e of the push-pull power amplifier chip, and the fifth pad e is bonded to the feeding power supply terminal VCC through the lead S5.

[0059] Among them, the feed power supply terminal VCC is a port connected to the feed power supply. In this embodiment, the feed signal provided by the feed power supply is transmitted to the output end of the first differential amplifier transistor 21 and the output end of the second differential amplifier transistor 22 through the feed power supply terminal VCC to ensure that the first differential amplifier transistor 21 and the second differential amplifier transistor 22 can work normally. Since the area of ​​the RF push-pull power amplifier chip 20 is limited, the feed power supply terminal VCC is set on the substrate 10, and the feed power supply terminal VCC is bonded to the fourth pad d / fifth pad e of the RF push-pull power amplifier chip 20 through the lead S4 / S5, the output end of the first differential amplifier transistor 21 is connected to the fourth pad d of the RF push-pull power amplifier chip 20, and the output end of the second differential amplifier transistor 22 is connected to the fifth pad e of the RF push-pull power amplifier chip 20, so as to realize feeding the first differential amplifier transistor 21 and the second differential amplifier transistor 22.

[0060] In one embodiment, if Figure 4 As shown, the RF push-pull power amplifier further includes a second capacitor C11, a first end of the second capacitor C11 is connected to the feeding power supply terminal VCC, and a second end of the second capacitor C11 is connected to the ground terminal.

[0061] In a specific embodiment, the second capacitor C11 is a decoupling capacitor. In order to further ensure the stability of the feed signal provided by the feed power supply terminal VCC to the first differential amplifier transistor 21 and the second differential amplifier transistor 22, the present application connects a second capacitor C11, connects one end of the second capacitor C11 to the feed power supply terminal VCC, and grounds the other end. The present application adopts a feed power supply terminal VCC to provide a feed signal to the first differential amplifier transistor 21 and the second differential amplifier transistor 22, and connects the second capacitor C11 to the feed power supply terminal VCC to ensure the stability of the feed signal provided to the first differential amplifier transistor 21 and the second differential amplifier transistor 22 through a second capacitor C11, thereby ensuring that the overall performance of the RF front-end module remains unchanged, and further reducing the occupied area of ​​the RF front-end module.

[0062] In a specific embodiment, based on the above embodiment, the second capacitor C11 forms a second resonant circuit with the lead S4 connecting the output end of the first differential amplifier transistor 21 and the first input end of the first balun 30, or the second capacitor C11 can form a second resonant circuit with the lead S5 connecting the output end of the second differential amplifier transistor 22 and the second input end of the first balun 30, and the resonant frequency point of the second resonant circuit is different from that of the first resonant circuit. In this way, the first resonant circuit and the second resonant circuit can cooperate to achieve frequency selection, adjust the impedance point of even harmonics, and suppress common-mode signals at the same time to obtain the differential-mode signal required by the RF push-pull power amplifier chip 20, thereby improving the RF push-pull power amplifier's ability to adjust the impedance point of even harmonics and suppress common-mode signals, thereby achieving the purpose of improving the overall performance of the RF push-pull power amplifier.

[0063] In a specific embodiment, since the lead S4 between the output end of the first differential amplifier transistor 21 and the feeding power supply end VCC can be equivalent to a third equivalent inductor, the second capacitor C11 can form a second resonant circuit with the third equivalent inductor, thereby cooperating with the first resonant circuit to achieve frequency selection, thereby improving the impedance point adjustment capability of the even harmonics and the common-mode signal suppression capability of the RF push-pull power amplifier.

[0064] In another specific embodiment, the lead S5 between the output end of the second differential amplifier transistor 22 and the feeding power supply end VCC can also be equivalent to a third equivalent inductor; the second capacitor C11 is connected in series with the third equivalent inductor to form a second resonant circuit, thereby cooperating with the first resonant circuit to achieve frequency selection, thereby improving the impedance point adjustment capability of the even harmonics and the common-mode signal suppression capability of the RF push-pull power amplifier.

[0065] In one embodiment, the first capacitor C21 and / or the second capacitor C11 are adjustable capacitors.

[0066] As an example, the first capacitor C21 may be an adjustable capacitor, and the capacitance value of the first capacitor C21 may be adjusted according to actual needs, so as to configure the resonant frequency point of the first resonant circuit, thereby suppressing even harmonic signals in different frequency bands.

[0067] As another example, the second capacitor C11 may be an adjustable capacitor, and the capacitance value of the second capacitor C11 may be adjusted according to actual needs to configure the resonant frequency point of the second resonant circuit, thereby suppressing even harmonic signals or common mode signals in different frequency bands.

[0068] As another example, the first capacitor C21 and the second capacitor C11 can be adjustable capacitors, and the capacitance values ​​of the first capacitor C21 and the second capacitor C11 can be adjusted according to actual needs, so as to configure the resonant frequency points of the first resonant circuit and the second resonant circuit. For example, the first resonant circuit is configured to resonate at the even harmonic frequency point of the RF push-pull power amplifier, and the second resonant circuit is configured to resonate at the fundamental frequency point, so that the first resonant circuit adjusts the impedance point of the even harmonics and the second resonant circuit suppresses the common-mode signal; or the first resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier, and the second resonant circuit is configured to resonate at the even harmonic frequency point, so that the first resonant circuit suppresses the common-mode signal and the second resonant circuit adjusts the impedance point of the even harmonics, thereby improving the impedance point adjustment capability of the even harmonics and the common-mode signal suppression capability of the RF push-pull power amplifier; thereby improving the linearity of the RF push-pull power amplifier.

[0069] In one embodiment, the first resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier, and the second resonant circuit is configured to resonate at an even harmonic frequency; or, the first resonant circuit is configured to resonate at an even harmonic frequency, and the second resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier.

[0070] In a specific embodiment, the first resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier, and the second resonant circuit is configured to resonate at the even harmonic frequency. This enables the first resonant circuit to suppress the common-mode signal in the RF push-pull power amplifier, and the second resonant circuit to suppress the even harmonic signal in the RF push-pull power amplifier, thereby improving the harmonic signal suppression capability and common-mode signal suppression capability of the RF push-pull power amplifier.

[0071] In another specific embodiment, the first resonant circuit is configured to resonate at the even harmonic frequency of the RF push-pull power amplifier, and the second resonant circuit is configured to resonate at the fundamental frequency. This enables the first resonant circuit to suppress the even harmonic signals in the RF push-pull power amplifier, and the second resonant circuit to suppress the common-mode signals in the RF push-pull power amplifier, thereby improving the harmonic signal suppression capability and common-mode signal suppression capability of the RF push-pull power amplifier.

[0072] In one embodiment, the even-order harmonic frequency point is a second-order harmonic frequency point.

[0073] In this embodiment, since the second-order harmonic signal in the RF push-pull power amplifier has a great influence on the performance of the RF push-pull power amplifier, such as power and efficiency, the even-order harmonic frequency point is preferably a second-order harmonic frequency point, thereby suppressing the second-order harmonic signal in the RF push-pull power amplifier and improving the overall performance of the RF power amplifier.

[0074] In one embodiment, the length of the lead between the first capacitor C21 and the first balun 30 is negatively correlated with the operating frequency of the RF push-pull power amplifier.

[0075] In a specific embodiment, since the lead S3 between the first capacitor C21 and the first balun 30 can be equivalent to the first equivalent inductor, the longer the length of the lead S3 is, the greater the inductance value of the first equivalent inductor is, and the shorter the length of the lead S3 is, the smaller the inductance value of the first equivalent inductor is.

[0076] According to the calculation formula of the resonant frequency point of the first resonant circuit: Wherein, f0 is the resonant frequency point of the first resonant circuit, L is the inductance value in the first resonant circuit, and C is the capacitance value in the first resonant circuit. Since the inductance value of the first resonant circuit is equal to the sum of the first equivalent inductance and the second equivalent inductance, and the second equivalent inductance is half of the equivalent inductance of the primary coil 31, which is generally a fixed value, when the first capacitor C21 is a fixed capacitor, the larger the first equivalent inductance, that is, the longer the length of the lead S3, the larger the inductance value L in the first resonant circuit, therefore, the larger the inductance value L in the first resonant circuit, the smaller the resonant frequency point f0 of the first resonant circuit, so that the length of the lead S3 between the first capacitor C21 and the first balun 30 is negatively correlated with the operating frequency of the RF push-pull power amplifier, that is, when the operating frequency of the RF push-pull power amplifier is relatively low, a longer lead S3 between the first capacitor C21 and the first balun 30 can be selected, and when the operating frequency of the RF push-pull power amplifier is relatively high, a shorter lead S3 between the first capacitor C21 and the first balun 30 can be selected.

[0077] In one embodiment, if Figure 5 As shown, the first differential amplifier transistor 21 is a BJT tube, including a base, a collector and an emitter. The base of the first differential amplifier transistor 21 receives the input first RF input signal, and the collector of the first differential amplifier transistor 21 is connected to the first pad a of the RF push-pull power amplifier chip 20. The first pad a is bonded to the first input end of the first balun 30 through the lead S1, and the emitter of the first differential amplifier transistor 21 is grounded; the second differential amplifier transistor 22 is a BJT tube, including a base, a collector and an emitter. The base of the second differential amplifier transistor 22 receives the input second RF input signal, and the collector of the second differential amplifier transistor 22 is connected to the second pad b of the RF push-pull power amplifier chip 20. The second pad b is bonded to the second input end of the first balun 30 through the lead S2, and the emitter of the second differential amplifier transistor 22 is grounded.

[0078] Specifically, the first RF input signal is input to the base of the first differential amplifier transistor 21, and after being amplified by the first differential amplifier transistor 21, a first RF amplified signal is output from the collector of the first differential amplifier transistor 21, and the first RF amplified signal is transmitted to the first input terminal of the first balun 30 through the lead S1.

[0079] The second differential amplifier transistor 22 is a BJT tube, including a base, a collector and an emitter. The base of the second differential amplifier transistor 22 receives the input second RF input signal, the collector of the second differential amplifier transistor 22 is connected to the second pad b of the RF push-pull power amplifier chip 20, the second pad b is bonded to the second input terminal of the first balun 30 through the lead S2, and the emitter of the second differential amplifier transistor 22 is grounded.

[0080] Specifically, the second RF input signal is input to the base of the second differential amplifier transistor 22, and after being amplified by the second differential amplifier transistor 22, a second RF amplified signal is output from the collector of the second differential amplifier transistor 22, and the second RF amplified signal is transmitted to the second input terminal of the first balun 30 through the lead S2.

[0081] Furthermore, after receiving the first RF amplified signal and the second RF amplified signal, the first balun 30 converts the first RF amplified signal and the second RF amplified signal, and inputs the converted first RF amplified signal and the second RF amplified signal to the subsequent circuit.

[0082] In a specific embodiment, in an embodiment, the first end of the secondary coil of the first balun 30 outputs the amplified first RF output signal, and the second end of the secondary coil outputs the amplified second RF output signal; or, the first end of the secondary coil of the first balun 30 outputs the amplified RF output signal, and the second end of the secondary coil is grounded.

[0083] In one embodiment, the RF push-pull power amplifier chip 20 may be a chip manufactured using GaAs, GaN or CMOS technology.

[0084] This embodiment provides a radio frequency push-pull power amplifier circuit, such as Figure 6As shown, it includes a first differential amplifier transistor 21, a second differential amplifier transistor 22, a first capacitor, a first inductor L1, a second inductor L2, a third inductor L3 and a first balun 30. The output end of the first differential amplifier transistor 21 is connected to the first input end of the first balun 30 through the first inductor L1, and the output end of the second differential amplifier transistor 22 is connected to the second input end of the first balun 30 through the second inductor L2; the first end of the first capacitor is connected to the midpoint of the primary coil 31 of the first balun 30 through the third inductor L3, and the second end of the first capacitor is grounded; the first capacitor, the third inductor L3, and the first inductor L1 or the second inductor L2 are connected in series to form a first resonant circuit, and the first resonant circuit is configured to resonate at an even harmonic frequency point, or the first resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier.

[0085] The midpoint of the primary coil 31 is the center position of the primary coil 31, and the distance between the center position and the first input end of the primary coil 31 is equal to the distance between the center position and the second input end of the primary coil 31. For example, the midpoint of the primary coil 31 may be the position to which the center tap of the first balun 30 is to be connected.

[0086] Among them, the first differential amplifier transistor 21 and the second differential amplifier transistor 22 can be BJT transistors or field effect transistors (FETs). Optionally, the first differential amplifier transistor 21 includes at least one BJT transistor (for example, an HBT transistor) or at least one field effect transistor. Exemplarily, the first differential amplifier transistor 21 can be formed by connecting a plurality of BJT transistors in parallel. The second differential amplifier transistor 22 includes at least one BJT transistor (for example, an HBT transistor) or at least one field effect transistor. Exemplarily, the second differential amplifier transistor 22 can be formed by connecting a plurality of BJT transistors in parallel.

[0087] In a specific embodiment, the first differential amplifier transistor 21 is configured to amplify the first RF input signal and output the first RF amplified signal, and the first RF amplified signal is coupled to the first end of the primary coil 31 of the first balun 30. The second differential amplifier transistor 22 is configured to amplify the second RF input signal and output the second RF amplified signal, and the second RF amplified signal is coupled to the second end of the primary coil 31 of the first balun 30. The first RF input signal can be the RF signal output after amplification by the corresponding pre-amplifier circuit, or it can be one of the balanced RF signals obtained by converting the unbalanced input RF signal. Similarly, the second RF input signal can also be the RF signal output after amplification by the corresponding pre-amplifier circuit, or it can be one of the balanced RF signals obtained by converting the unbalanced input RF signal.

[0088] It can be understood that the first differential amplifier transistor 21 and the second differential amplifier transistor 22 are any amplifier stage in the RF push-pull power amplifier chip 20, and the amplifier stage can be any amplifier stage in the driving stage, the intermediate stage or the output stage.

[0089] In a specific embodiment, the RF push-pull power amplifier chip 20 further includes a pre-stage conversion circuit (not shown), for example, the pre-stage conversion circuit may be a pre-stage conversion balun. The pre-stage conversion balun is used to convert an unbalanced RF input signal into a balanced first RF input signal and a second RF input signal, and input the first RF input signal to the input end of the first differential amplifier transistor 21, and input the second RF input signal to the input end of the second differential amplifier transistor 22.

[0090] In a specific embodiment, the output end of the first differential amplifier transistor 21 is connected to the first input end of the first balun 30 through the first inductor L1, and the output end of the second differential amplifier transistor 22 is connected to the second input end of the first balun 30 through the second inductor L2; the first end of the first capacitor is connected to the midpoint of the primary coil 31 of the first balun 30 through the third inductor L3, and the second end of the first capacitor is grounded; the first capacitor, the third inductor L3, and the first inductor L1 or the second inductor L2 are connected in series to form a first resonant circuit, and the first resonant circuit is configured to resonate at an even harmonic frequency point, or the first resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier. In this embodiment, the first resonant circuit is configured to resonate at the even harmonic frequency point of the RF push-pull power amplifier circuit, and the second resonant circuit is configured to resonate at the fundamental frequency point, so that the first resonant circuit adjusts the impedance point of the even harmonics and the second resonant circuit suppresses the common-mode signal; or the first resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier circuit, and the second resonant circuit is configured to resonate at the even harmonic frequency point, so that the first resonant circuit suppresses the common-mode signal and the second resonant circuit adjusts the impedance point of the even harmonics, thereby improving the impedance point adjustment capability of the even harmonics and the common-mode signal suppression capability of the RF push-pull power amplifier.

[0091] In one embodiment, if Figure 7 As shown, the RF push-pull power amplifier circuit also includes a feeding power supply terminal and a second capacitor C11; the output end of the first differential amplifier transistor 21 is connected to the feeding power supply terminal through the fourth inductor L4; the output end of the second differential amplifier transistor 22 is connected to the feeding power supply terminal through the fifth inductor L5; the first end of the second capacitor C11 is connected to the feeding power supply terminal, and the second end of the second capacitor C11 is connected to the ground terminal; the second capacitor C11 and the fourth inductor L4 or the fifth inductor L5 form a second resonant circuit, and the second resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier circuit, or the second resonant circuit is configured to resonate at the even harmonic frequency point.

[0092] The power supply terminal VCC is a port connected to the power supply. In this embodiment, the power supply signal provided by the power supply is transmitted to the output terminal of the first differential amplifier transistor 21 and the output terminal of the second differential amplifier transistor 22 through the power supply terminal VCC to ensure that the first differential amplifier transistor 21 and the second differential amplifier transistor 22 can work normally. The output terminal of the first differential amplifier transistor 21 is connected to the power supply terminal through the fourth inductor L4; the output terminal of the second differential amplifier transistor 22 is connected to the power supply terminal through the fifth inductor L5, so as to realize the feeding of the first differential amplifier transistor 21 and the second differential amplifier transistor 22 through the power supply terminal.

[0093] In a specific embodiment, the RF push-pull power amplifier circuit also includes a second capacitor C11, a first end of the second capacitor C11 is connected to the power supply terminal, and a second end of the second capacitor C11 is connected to the ground terminal; the second capacitor C11 and the fourth inductor L4 or the fifth inductor L5 form a second resonant circuit, and the second resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier circuit, or the second resonant circuit is configured to resonate at the even harmonic frequency point.

[0094] In a specific embodiment, the second capacitor C11 is a decoupling capacitor. In order to further ensure the stability of the feed signal provided by the feed power supply terminal VCC to the first differential amplifier transistor 21 and the second differential amplifier transistor 22, the present application connects a second capacitor C11, connects one end of the second capacitor C11 to the feed power supply terminal VCC, and grounds the other end. The present application uses a feed power supply terminal VCC to provide a feed signal to the first differential amplifier transistor 21 and the second differential amplifier transistor 22, and connects the second capacitor C11 to the feed power supply terminal VCC to ensure the stability of the feed signal provided to the first differential amplifier transistor 21 and the second differential amplifier transistor 22 through a second capacitor C11.

[0095] In a specific embodiment, based on the above embodiment, the first end of the second capacitor C11 is connected to the power supply terminal, and the second end of the second capacitor C11 is connected to the ground terminal; the second capacitor C11 and the fourth inductor L4 or the fifth inductor L5 form a second resonant circuit, and the second resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier circuit, or the second resonant circuit is configured to resonate at the even harmonic frequency point, and the resonant frequency point of the second resonant circuit is different from that of the first resonant circuit. In this way, the first resonant circuit and the second resonant circuit can cooperate to achieve frequency selection, for example, the first resonant circuit One resonant circuit is configured to resonate at an even harmonic frequency point, and the second resonant circuit is configured to resonate at a fundamental frequency point, so that the first resonant circuit adjusts the impedance point of the even harmonics and the second resonant circuit suppresses the common-mode signal; or the first resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier, and the second resonant circuit is configured to resonate at the even harmonic frequency point, so that the first resonant circuit suppresses the common-mode signal and the second resonant circuit adjusts the impedance point of the even harmonics, thereby improving the RF push-pull power amplifier's even harmonic impedance point adjustment capability and common-mode signal suppression capability.

[0096] In a specific embodiment, the second capacitor C11 can form a second resonant circuit with the fourth inductor L4, thereby cooperating with the first resonant circuit to achieve frequency selection, thereby improving the impedance point adjustment capability of the even harmonics and the common-mode signal suppression capability of the RF push-pull power amplifier.

[0097] In another specific embodiment, the second capacitor C11 is connected in series with the fifth inductor L5 to form a second resonant circuit, thereby cooperating with the first resonant circuit to achieve frequency selection, thereby improving the impedance point adjustment capability of the even harmonics and the common-mode signal suppression capability of the RF push-pull power amplifier.

[0098] This embodiment provides a radio frequency front-end module, including the radio frequency push-pull power amplifier in the above embodiment, or including the radio frequency push-pull power amplifier circuit in the above embodiment.

[0099] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A radio frequency push-pull power amplifier, characterized in that: It includes a substrate, a radio frequency push-pull power amplifier chip arranged on the substrate, and a first balun arranged on the substrate; the radio frequency push-pull power amplifier chip includes a first differential amplifier transistor, a second differential amplifier transistor and a first capacitor, the output end of the first differential amplifier transistor is connected to the first input end of the first balun; the output end of the second differential amplifier transistor is connected to the second input end of the first balun; the first end of the first capacitor is connected to the third pad of the radio frequency push-pull power amplifier chip, the third pad is bonded to the midpoint of the primary coil of the first balun through a wire, and the second end of the first capacitor is grounded.

2. The radio frequency push-pull power amplifier according to claim 1, characterized in that: The first capacitor, the lead wire, and one-half of the primary coil of the first balun form a first harmonic circuit.

3. The radio frequency push-pull power amplifier according to claim 1, characterized in that: The output end of the first differential amplifier transistor is connected to the first pad of the RF push-pull power amplifier chip, and the first pad is wire-bonded to the first input end of the first balun; the output end of the second differential amplifier transistor is connected to the second pad of the RF push-pull power amplifier chip, and the second pad is wire-bonded to the second input end of the first balun.

4. The radio frequency push-pull power amplifier according to claim 1, characterized in that: The RF push-pull power amplifier also includes a feeding power supply terminal arranged on the substrate; the output end of the first differential amplifier transistor is connected to the fourth pad of the push-pull power amplifier chip, and the fourth pad is bonded to the feeding power supply terminal through a wire; the output end of the second differential amplifier transistor is connected to the fifth pad of the push-pull power amplifier chip, and the fifth pad is bonded to the feeding power supply terminal through a wire.

5. The radio frequency push-pull power amplifier according to claim 4, characterized in that: The radio frequency push-pull power amplifier further includes a second capacitor, a first end of the second capacitor is connected to the feeding power supply end, and a second end of the second capacitor is connected to the ground end.

6. The radio frequency push-pull power amplifier according to claim 4, characterized in that: The first capacitor and / or the second capacitor is an adjustable capacitor.

7. The radio frequency push-pull power amplifier according to claim 1, characterized in that: The primary coil of the first balun includes a first primary coil segment and a second primary coil segment, the first pad is wire-bonded to the first end of the first primary coil segment, the second end of the first primary coil segment is connected to the first end of the second primary coil segment, the second pad is wire-bonded to the second end of the second primary coil segment, the first end of the first capacitor is connected to the third pad of the RF push-pull power amplifier chip, the third pad is wire-bonded between the first primary coil segment and the second primary coil segment, and the second end of the first capacitor is grounded.

8. The radio frequency push-pull power amplifier according to claim 5, characterized in that: The lead wire between the first capacitor and the primary coil forms a first equivalent inductance, and one half of the primary coil forms a second equivalent inductance; the first capacitor, the first equivalent inductance and the second equivalent inductance are connected in series to form a first resonant circuit; A lead wire between the second capacitor and the output terminal of the first differential amplifier transistor forms a third equivalent inductor; or a lead wire between the second capacitor and the output terminal of the second differential amplifier transistor forms the third equivalent inductor; The second capacitor and the third equivalent inductor are connected in series to form a second resonant circuit; The first resonant circuit and the second resonant circuit have different resonant frequency points.

9. The radio frequency push-pull power amplifier according to claim 8, characterized in that: The first resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier, and the second resonant circuit is configured to resonate at an even harmonic frequency; or, the first resonant circuit is configured to resonate at an even harmonic frequency, and the second resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier.

10. The radio frequency push-pull power amplifier according to claim 9, characterized in that: The even harmonic frequency point is a second-order harmonic frequency point.

11. The radio frequency push-pull power amplifier according to claim 1, characterized in that: The length of the lead between the first capacitor and the first balun is negatively correlated with the operating frequency of the RF push-pull power amplifier.

12. The radio frequency push-pull power amplifier according to claim 1, characterized in that: The first differential amplifier transistor is a BJT tube, including a base, a collector and an emitter, the base of the first differential amplifier transistor receives the input first RF input signal, the collector of the first differential amplifier transistor is connected to the first pad of the RF push-pull power amplifier chip, the first pad is wire-bonded to the first input terminal of the first balun, and the emitter of the first differential amplifier transistor is grounded; The second differential amplifier transistor is a BJT tube, including a base, a collector and an emitter. The base of the second differential amplifier transistor receives the input second RF input signal, the collector of the second differential amplifier transistor is connected to the second pad of the RF push-pull power amplifier chip, the second pad is wire-bonded to the second input terminal of the first balun, and the emitter of the second differential amplifier transistor is grounded.

13. The radio frequency push-pull power amplifier according to claim 1, characterized in that: The first end of the secondary coil of the first balun outputs an amplified first RF output signal, and the second end of the secondary coil outputs an amplified second RF output signal; or, the first end of the secondary coil of the first balun outputs an amplified RF output signal, and the second end of the secondary coil is grounded.

14. A radio frequency push-pull power amplifier circuit, characterized in that: The invention comprises a first differential amplifier transistor, a second differential amplifier transistor, a first capacitor, a first inductor, a second inductor, a third inductor and a first balun; the output end of the first differential amplifier transistor is connected to the first input end of the first balun through the first inductor, and the output end of the second differential amplifier transistor is connected to the second input end of the first balun through the second inductor; the first end of the first capacitor is connected to the midpoint of the primary coil of the first balun through the third inductor, and the second end of the first capacitor is grounded; The first capacitor and the third inductor are connected in series with the first inductor or the second inductor to form a first resonant circuit, and the first resonant circuit is configured to resonate at an even harmonic frequency point, or the first resonant circuit is configured to resonate at the fundamental frequency point of the RF push-pull power amplifier circuit.

15. The radio frequency push-pull power amplifier circuit according to claim 14, characterized in that: The RF push-pull power amplifier circuit also includes a feed power supply terminal and a second capacitor; the output terminal of the first differential amplifier transistor is connected to the feed power supply terminal through a fourth inductor; the output terminal of the second differential amplifier transistor is connected to the feed power supply terminal through a fifth inductor; the first end of the second capacitor is connected to the feed power supply terminal, and the second end of the second capacitor is connected to the ground terminal; The second capacitor and the fourth inductor or the fifth inductor form a second resonant circuit, and the second resonant circuit is configured to resonate at the fundamental frequency of the RF push-pull power amplifier circuit, or the second resonant circuit is configured to resonate at an even harmonic frequency.

16. A radio frequency front-end module, characterized in that: It comprises the radio frequency push-pull power amplifier as described in any one of claims 1 to 13, or it comprises the radio frequency push-pull power amplifier circuit as described in any one of claims 14 to 15.

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