Wafer carrier for providing uniform temperature distribution

Abstract

The invention relates to a wafer carrier for providing uniform temperature distribution, mainly comprising a support assembly and a diffusion unit, in which the support assembly comprises at least one groove and an air inlet pipeline. The diffusion unit is made of a porous material and is arranged on the top surface of the supporting assembly. The diffusion unit comprises a body, a plurality of protruding parts and at least one diffusion channel, wherein the protruding parts and the diffusion channel are arranged on a bearing face of the body. The protruding part of the diffusion unit is used for bearing a wafer, and the gas inlet pipeline of the supporting assembly conveys gas to the groove and conveys the gas to the diffusion unit through the groove. Therefore, the gas is transmitted to the bearing surface and the protruding part through the pores of the diffusion unit and is in contact with the bottom of the wafer on the diffusion unit, so that the temperature of the wafer is adjusted, and the uniformity of the temperature distribution of the wafer is improved.

Description

Technical Field

[0001] The present invention relates to a wafer carrier, and more particularly to a wafer carrier capable of providing uniform temperature distribution. Background Art

[0002] Chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) are all commonly used thin film deposition equipment and are widely used in the preparation processes of integrated circuits, light-emitting diodes and displays.

[0003] The deposition equipment mainly includes a chamber and a wafer carrier, wherein the wafer carrier is located in the chamber and is used to carry at least one wafer. Taking physical vapor deposition as an example, a target material needs to be set in the chamber, wherein the target material faces the wafer on the wafer carrier. When performing physical vapor deposition, an inert gas and / or a reactive gas can be delivered into the chamber, and a bias voltage can be applied to the target material and the wafer carrier respectively, wherein the wafer carrier also controls the temperature of the carried wafer. The inert gas in the chamber will form an ionized inert gas due to the action of the high-voltage electric field. The ionized inert gas will be attracted by the bias voltage on the target material and bombard the target material. The target atoms or molecules sputtered from the target material will be attracted by the bias voltage on the wafer carrier and deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.

[0004] Specifically, the stability and uniformity of the temperature generated by the wafer carrier will have a significant impact on the quality of thin film deposition on the wafer surface. Therefore, how to make the wafer carrier generate a stable and uniform temperature is one of the important issues in the thin film deposition preparation process. Summary of the invention

[0005] As described in the prior art, it is usually necessary to adjust the temperature of the wafer carrier during the deposition step to form a thin film of uniform thickness on the surface of the wafer. To this end, the present invention proposes a wafer carrier for providing uniform temperature distribution, which mainly supports the wafer through a diffusion unit, wherein the diffusion unit is made of a porous material and can provide uniform and stable heating gas or cooling gas to the supported wafer, so that the temperature distribution of the wafer is more uniform, which is beneficial to improving the quality of the preparation process.

[0006] One purpose of the present invention is to provide a wafer carrier for providing uniform temperature distribution, wherein a diffusion unit can provide uniformly distributed gas to the bottom surface of the wafer, thereby avoiding excessive concentration of gas in a partial area of ​​the bottom surface of the wafer, thereby making the temperature distribution of various areas of the wafer more uniform.

[0007] An object of the present invention is to provide a wafer carrier for providing uniform temperature distribution, wherein the airflow provided by the diffusion unit to the wafer is more uniform and gentle, thereby preventing the gas provided by the diffusion unit from blowing the wafer and causing the wafer to shift relative to the wafer carrier.

[0008] In addition, the weight of the wafer and the gas pressure provided by the diffusion unit can be further calculated, so that the wafer can still be stably placed on the surface of the wafer carrier without using an electrostatic chuck or a fixing ring.

[0009] In order to achieve the above-mentioned objectives, the present invention proposes a wafer carrier plate for providing uniform temperature distribution, comprising: a support component, comprising: at least one groove, arranged on a top surface of the support component; an air inlet pipeline, connected to the groove, and used to transport a gas to the groove located on the top surface; a diffusion unit, located on the top surface of the support component and being a porous material, comprising: a main body; a plurality of protrusions, located on a carrying surface of the main body, and used to carry at least one wafer; at least one diffusion channel, between adjacent multiple protrusions.

[0010] The present invention provides another wafer carrier plate for providing uniform temperature distribution, comprising: a support component, comprising: at least one groove, arranged on a top surface of the support component; an air inlet pipeline, connecting the groove and used to transport a gas to the groove located on the top surface; a diffusion unit, used to carry at least one wafer, and located on the top surface of the support component, wherein the diffusion unit is a porous material, comprising: a first diffusion region; a second diffusion region, the second diffusion region is located outside the first diffusion region, wherein the permeability of the first diffusion region is different from the permeability of the second diffusion region.

[0011] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, the supporting assembly includes a base and a carrying unit, the carrying unit is disposed on the base, and the groove is disposed on the carrying unit.

[0012] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, the carrier unit is a titanium plate, and the thermal conductivity of the diffusion unit is greater than the thermal conductivity of the titanium plate.

[0013] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, the area of ​​the protrusion is between 30% and 70% of the area of ​​the carrier surface of the body.

[0014] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, the height of the protrusion is between 0.3 mm and 1 mm.

[0015] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, the diameter of the protrusions is approximately between 6 mm and 10 mm, and the spacing between adjacent protrusions is between 1 mm and 5 mm.

[0016] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, the air permeability of the first diffusion region is greater than that of the second diffusion region.

[0017] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, the first diffusion region is disk-shaped, and the second diffusion region is ring-shaped, and the second diffusion region is disposed around the first diffusion region.

[0018] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, a plurality of protrusions are disposed in the first diffusion region and the second diffusion region, and at least one diffusion channel is formed between adjacent protrusions.

[0019] In at least one embodiment of the wafer carrier for providing uniform temperature distribution, the first diffusion region and the second diffusion region are made of foamed metal, and the foaming time and the foaming temperature of the first diffusion region and the second diffusion region are different.

[0020] The present invention provides a wafer carrier for providing uniform temperature distribution, which can provide uniform and stable heating gas or cooling gas to the carried wafer, so that the temperature distribution of the wafer is more uniform, which is beneficial to improving the quality of the preparation process. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] Figure 1 FIG. 4 is a cross-sectional schematic diagram of an embodiment of a wafer carrier for providing uniform temperature distribution according to the present invention.

[0023] Figure 2 It is a three-dimensional exploded schematic diagram of an embodiment of a wafer carrier for providing uniform temperature distribution according to the present invention.

[0024] Figure 3 It is a three-dimensional exploded schematic diagram of another embodiment of the circular carrier plate for providing uniform temperature distribution of the wafer of the present invention.

[0025] Description of Reference Numerals 10: Wafer carrier 11: Support components 111: Base 112: Top surface 113: Load-bearing unit 12: Wafer 13: Diffusion unit 131: Ontology 132: Bearing surface 133: Raised part 135: Diffusion Channel 14: Groove 141: Annular groove 143: Radial groove 15: Intake pipe 151: Branch pipeline 161: Heating unit 163: Cooling unit 165: Bias electrode 20: Wafer carrier 23: Diffusion unit 231: First diffusion area 233: Second diffusion region. DETAILED DESCRIPTION

[0026] The technical scheme in the embodiment of the present invention is described clearly and completely below in conjunction with the accompanying drawings in the embodiment of the present invention. In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways different from those described herein, and those skilled in the art can make similar generalizations without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0027] See also Figure 1 and Figure 2 , are respectively a cross-sectional schematic diagram and a three-dimensional exploded schematic diagram of an embodiment of a wafer carrier for providing uniform temperature distribution of the present invention. As shown in the figure, the wafer carrier 10 is used to carry at least one wafer 12, and mainly includes a supporting component 11 and a diffusion unit 13, wherein the supporting component 11 is used to connect the diffusion unit 13, and the diffusion unit 13 is used to carry at least one wafer 12.

[0028] In one embodiment of the present invention, the support assembly 11 includes a base 111 and a carrying unit 113, wherein the carrying unit 113 is disposed on the base 111. For example, the carrying unit 113 may be a titanium plate, and the carrying unit 113 may be fixed to the base 111 by a plurality of screws.

[0029] At least one groove 14 may be disposed on a top surface 112 of the support assembly 11. Figure 2As shown, at least one annular groove 141 and at least one radial groove 143 may be disposed on the top surface 112 of the bearing unit 113 of the support assembly 11, wherein the annular groove 141 and the radial groove 143 are connected. For example, the bearing unit 113 of the support assembly 11 is disc-shaped, and the annular groove 141 and the radial groove 143 are disposed on the top surface 112 of the disc-shaped bearing unit 113.

[0030] At least one air intake line 15 may be disposed in the support assembly 11, wherein the air intake line 15 is connected to the groove 14 located on the top surface 112 of the support assembly 11. For example, the air intake line 15 may be disposed in the base 111 and / or the carrier unit 113, and connected to the groove 14 on the top surface 112 of the carrier unit 113.

[0031] In actual application, gas can be delivered to the groove 14 of the support assembly 11 through the air inlet line 15, so that the gas flows in the groove 14, wherein the gas can be an inert gas or a non-reactive gas. For example, cooling gas or heating gas can be delivered to the annular groove 141 and the radial groove 143 of the groove 14 through the air inlet line 15. In one embodiment of the present invention, at least one branch line 151 can be provided in the carrier unit 113, and the branch line 151 is connected to the groove 14 on the carrier unit 113. When the carrier unit 113 is connected to the base 111, the branch line 151 of the carrier unit 113 will be connected to the air inlet line 15 of the base 111, so that the air inlet line 15 can deliver gas to the groove 14 through the branch line 151.

[0032] Generally speaking, the wafer 12 is placed directly on the top surface 112 of the support assembly 11, for example, the wafer 12 is placed on the top surface 112 of the carrier unit 113. When the gas is transported from the inlet line 15 or the branch line 151 to the groove 14, most of the gas is usually blown directly to the bottom of the wafer 12, and then flows along the groove 14 between the wafer 12 and the top surface 112 of the support assembly 11. The gas flowing in the groove 14 contacts the bottom surface of the wafer 12 and adjusts the temperature of the wafer 12 by heat conduction and heat convection.

[0033] However, the gas blown toward the bottom surface of the wafer 12 by the air inlet line 15 or the branch line 151 will form an upward thrust on a local area of ​​the wafer 12. When the thrust of the gas on the bottom surface of the wafer 12 is greater than the weight of the wafer 12 and the thrust of the gas applied to the top surface of the wafer 12, the wafer 12 will be blown away from the support assembly 11, causing the wafer 12 to move relative to the support assembly 11.

[0034] In order to avoid the above problems, an electrostatic chuck is generally provided in the support assembly 11, and the wafer 12 is electrostatically attracted to the support assembly 11. Another method is to apply pressure to the upper surface of the wafer 12 through a clamping ring to fix the wafer 12 on the support assembly 11.

[0035] In actual application, in addition to the air intake line 15 and the branch line 151, the support assembly 11 is usually provided with a heating line 161, a cooling line 163 and / or a bias electrode 165. Therefore, the additional electrostatic chuck in the support assembly 11 will undoubtedly increase the complexity of the structure, the difficulty of manufacturing and the cost of setting up the wafer carrier 10. In addition, although the cost of setting up the fixing ring is lower than that of the electrostatic chuck, the fixing ring will directly apply pressure to the surface of the wafer 12 when in use, which may cause damage to the wafer 12.

[0036] In order to increase the contact area between the gas in the groove 14 and the wafer 12, the density of the grooves 14 provided on the top surface 112 of the support assembly 11 can be increased to improve the temperature uniformity of the wafer 12. However, in practical applications, it is impossible to increase the density of the grooves 14 provided on the top surface 112 of the support assembly 11 indefinitely, so the effect of improving the temperature uniformity of the wafer 12 by providing the grooves 14 is still limited.

[0037] To this end, the present invention further proposes to set a diffusion unit 13 on the top surface 112 of the support component 11, and place the wafer 12 on the diffusion unit 13. The diffusion unit 13 is made of a porous material, such as ceramic, silicon carbide (SiC) or foamed metal, and the diffusion unit 13 is fixed to the top surface 112 of the support component 11 and / or the carrier unit 113 using screws.

[0038] The gas delivered to the groove 14 located on the top surface 112 by the inlet pipeline 15 and / or the branch pipeline 151 is transmitted to the bottom surface of the wafer 12 through the diffusion unit 13. The diffusion unit 13 is made of a porous material, wherein the gas in the inlet pipeline 15, the branch pipeline 151 and / or the groove 14 is transmitted to the supporting surface 132 of the diffusion unit 13 through the pores inside the diffusion unit 13, and is discharged from between the diffusion unit 13 and the wafer 12.

[0039] The diffusion unit 13 described in the embodiment of the present invention is made of a porous material and has an air permeability of 30% to 70%, so that the diffusion unit 13 can provide a uniformly distributed and moderately pressured gas to the bottom surface of the wafer 12. In contrast, if the gas is directly delivered to the wafer 12 through the air inlet line 15 and / or the branch line 151 of the support assembly 11, the gas will usually be sprayed to a specific area of ​​the wafer 12. In this way, the local area of ​​the wafer 12 will be subjected to greater pressure, causing the wafer 12 to shift relative to the wafer carrier 10, thereby requiring an additional electrostatic suction cup or fixing ring. In addition, the gas that is too concentrated in a specific area is not conducive to forming a uniform temperature distribution on the wafer 12, and will affect the quality of the subsequent deposition process.

[0040] The present invention blows uniform and gentle gas toward the bottom surface of the wafer 12 through the diffusion unit 13, which can reduce the excessive concentration of gas in a specific area of ​​the wafer 12, which is not only conducive to improving the temperature uniformity of the wafer 12, but also can prevent the gas from blowing the wafer 12 on the diffusion unit 13. Specifically, the force applied by the gas provided by the diffusion unit 13 to the bottom surface of the wafer 12 can be calculated based on the weight of the wafer 12 and the force of the gas acting on the upper surface of the wafer 12. For example, the force applied by the gas output by the diffusion unit 13 to the bottom surface of the wafer 12 is less than the weight of the wafer 12, or less than the sum of the weight of the wafer 12 and the force of the gas acting on the upper surface of the wafer 12.

[0041] Thus, even without using an electrostatic chuck or a fixing ring, the wafer 12 can still be stably placed on the diffusion unit 13 of the wafer carrier 10 without displacement relative to the wafer carrier 10 and the diffusion unit 13. Without using an electrostatic chuck or a fixing ring, the manufacturing difficulty and cost of the wafer carrier 10 can be greatly reduced.

[0042] In one embodiment of the present invention, the diffusion unit 13 may include a body 131, a plurality of protrusions 133 and at least one diffusion channel 135, wherein the shape of the body 131 may be similar to the support assembly 11 and / or the carrier unit 113, for example, the body 131 and the carrier unit 113 may be disc-shaped. The plurality of protrusions 133 are disposed on the carrier surface 132 of the body 131 and are used to carry the wafer 12, wherein the protrusions 133 may be columnar protrusions of any geometric shape, for example, the protrusions 133 may be cylindrical protrusions. The plurality of protrusions 133 form at least one diffusion channel 135 on the carrier surface 132, wherein the diffusion channel 135 is located between adjacent protrusions 133, for example, the protrusions 133 and the diffusion channel 135 are both disposed on the carrier surface 132 of the body 131 of the diffusion unit 13.

[0043] Although the diffusion unit 13 is made of a porous material and has a plurality of pores, after the gas in the inlet pipeline 15, the branch pipeline 151 and / or the groove 14 of the support assembly 11 is transmitted to the diffusion unit 13, the gas may initially accumulate in the diffusion unit 13. When the gas pressure in the diffusion unit 13 accumulates to a certain extent, the gas will be discharged through the pores on the surface of the diffusion unit 13. At this time, the gas pressure ejected from the pores on the supporting surface 132 of the diffusion unit 13 is relatively high, and may cause relative displacement between the wafer 12 and the diffusion unit 13.

[0044] To this end, the present invention further provides a protrusion 133 on the bearing surface 132 of the diffusion unit 13, so that when the gas accumulated in the diffusion unit 13 is discharged from the air holes of the bearing surface 132 and / or the diffusion channel 135, it can be discharged through the diffusion channels 135 between the plurality of protrusions 133, so as to avoid the gas pressure accumulated in the diffusion unit 13 directly acting on the bottom surface of the wafer 12, and is conducive to reducing the gas pressure accumulated between the diffusion unit 13 and the wafer 12. In addition, the protrusion 133 can further provide friction between the diffusion unit 13 and the wafer 12, which can effectively prevent the discharged gas from causing the wafer 12 to move relative to the diffusion unit 13.

[0045] In actual application, the thickness of the diffusion unit 13 at the position where the protrusion 133 is set will be greater than the thickness of the diffusion channel 135. In theory, the gas accumulated in the diffusion unit 13 may be discharged from the pores on the diffusion channel 135 first, and then discharged from the pores on the protrusion 133. In addition, the pressure of the gas discharged from the pores on the diffusion channel 135 is generally greater than the pressure of the gas discharged from the pores on the protrusion 133. Since there is a small gap between the diffusion channel 135 and the wafer 12, it can be avoided that the gas with a relatively high pressure discharged from the diffusion channel 135 directly acts on the bottom surface of the wafer 12, and it is helpful to reduce the chance of displacement of the wafer 12 caused by the pressure output by the diffusion unit 13.

[0046] In one embodiment of the present invention, the total area of ​​the protrusions 133 is about 30% to 70% of the bearing surface 132 of the body 131 of the diffusion unit 13, the height of the protrusions 133 is about 0.3 mm to 1 mm, the diameter of the protrusions 133 is about 6 mm to 10 mm, and the gap between adjacent protrusions 133 is about 1 mm to 5 mm. The ratio of the total area of ​​the protrusions 133 to the bearing surface 132, the height, diameter and spacing of the protrusions 133 are only one embodiment of the present invention and are not intended to limit the scope of protection of the present invention.

[0047] In addition, when the gas in the diffusion unit 13 is discharged from the supporting surface 132 or the diffusion channel 135, the wafer 12 will still contact the protrusion 133 of the diffusion unit 13, so that there is friction between the diffusion unit 13 and the bottom surface of the wafer 12, and the wafer 12 can be further prevented from shifting relative to the diffusion unit 13.

[0048] In addition, a material with a higher thermal conductivity can be selected to make the diffusion unit 13, wherein the thermal conductivity of the diffusion unit 13 can be greater than that of the supporting unit 113. For example, the supporting unit 113 of the support assembly 11 is usually a titanium disk, and its thermal conductivity is about 21.9W / m*k, while the thermal conductivity of the diffusion unit 13 made of silicon carbide (SiC) is about 120~270W / m*k, wherein the thermal conductivity effect of the diffusion unit 13 will be much higher than that of the supporting unit 113, and the efficiency of heating or cooling the wafer 12 can be improved.

[0049] In summary of the above description, the diffusion unit 13 is provided on the support assembly 11 and / or the carrying unit 113, and a stable and uniform airflow can be provided to the wafer 12 through the diffusion unit 13, so as to improve the overall temperature uniformity of the wafer 12. In addition, by providing a protrusion 133 and a diffusion channel 135 on the carrying surface 132 of the diffusion unit 13, and adjusting the gas pressure provided by the diffusion unit 13 to the wafer 12, the wafer 12 can be stably placed on the diffusion unit 13 without using an electrostatic suction cup or a fixing ring, which is conducive to simplifying the structure and design difficulty of the wafer carrier 10, and can reduce the manufacturing cost of the wafer carrier 10.

[0050] In one embodiment of the present invention, the wafer carrier 10 may be provided with at least one heating unit 161, at least one cooling unit 163 and / or at least one bias electrode 165, wherein the heating unit 161 and the cooling unit 163 are respectively used to heat and cool the wafer 12 on the wafer carrier 10 to adjust the temperature of the wafer 12, and the bias electrode 165 is used to form a radio frequency (RF) bias. For example, the heating unit 161 may be a resistive heater, and the cooling unit 163 may be a pipeline with a cooling fluid inside, wherein the heating unit 161 and the cooling unit 163 may be provided in the base 111, and heat or cool the wafer 12 through the base 111, the carrier unit 113 and / or the diffusion unit 13.

[0051] See also Figure 3 , is a three-dimensional exploded schematic diagram of another embodiment of the wafer carrier for providing uniform temperature distribution of the present invention. Figure 1 and Figure 2 The wafer carrier 20 is used to carry at least one wafer 12 , and mainly includes a supporting component 11 and a diffusion unit 23 , wherein the supporting component 11 is used to connect to the diffusion unit 23 and carry at least one wafer 12 through the diffusion unit 23 .

[0052] At least one groove 14 may be disposed on a top surface 112 of the support assembly 11. For example, the groove 14 includes at least one annular groove 141 and at least one radial groove 143, wherein the annular groove 141 and the radial groove 143 are connected. In addition, an air inlet line 15 may be disposed inside the support assembly 11 to connect the groove 14 and to deliver a gas to the groove 14 located on the top surface 112.

[0053] The diffusion unit 23 of the embodiment of the present invention is made of porous material, such as ceramic, silicon carbide (SiC) or foamed metal, and is connected to the top surface 112 of the support component 11, wherein the diffusion unit 23 includes a first diffusion region 231 and a second diffusion region 233.

[0054] The first diffusion region 231 and the second diffusion region 233 of the diffusion unit 23 have different air permeabilities, wherein the second diffusion region 233 is located outside the first diffusion region 231, and the air permeability of the first diffusion region 231 may be greater than that of the second diffusion region 233. For example, the first diffusion region 231 is disc-shaped, and the second diffusion region 233 is ring-shaped, wherein the second diffusion region 233 is arranged around the first diffusion region 231.

[0055] The above-mentioned air permeability of the first diffusion region 231 located on the inner side is greater than that of the second diffusion region 233, which is only an embodiment of the present invention and is not intended to limit the scope of protection of the present invention. In another embodiment of the present invention, the air permeability of the first diffusion region 231 and the second diffusion region 233 can be adjusted according to actual needs, so that the air permeability of the first diffusion region 231 located on the inner side is less than that of the second diffusion region 233.

[0056] In one embodiment of the present invention, the first diffusion region 231 and the second diffusion region 233 can be made of the same material. For example, when the first diffusion region 231 and the second diffusion region 233 are foamed metals, the first diffusion region 231 and the second diffusion region 233 can be made by different foaming temperatures and different foaming times, so that the first diffusion region 231 and the second diffusion region 233 have different air permeabilities. In different embodiments, the first diffusion region 231 and the second diffusion region 233 can be made of different materials with different air permeabilities.

[0057] In one embodiment of the present invention, the surfaces of the first diffusion region 231 and the second diffusion region 233 may be configured as follows: Figure 2 A plurality of protrusions 133 are shown, and at least one diffusion channel 135 is formed between adjacent protrusions 133 .

[0058] The above-described contents are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. That is, all equivalent changes and modifications based on the shape, structure, characteristics and spirit described in the present invention should be included in the protection scope of the present invention.

Claims

1. A wafer carrier for providing uniform temperature distribution, characterized in that: include: A support assembly comprising: At least one groove is disposed on a top surface of the support assembly; an air inlet pipeline connected to the groove and used for delivering a gas to the groove located on the top surface; A diffusion unit, located on the top surface of the support assembly and made of a porous material, comprising: one body; A plurality of protrusions are located on a carrying surface of the body and are used to carry at least one wafer; At least one diffusion channel is between the adjacent protrusions.

2. The wafer carrier for providing uniform temperature distribution as claimed in claim 1, characterized in that: The supporting assembly comprises a base and a bearing unit. The bearing unit is arranged on the base, and the groove is arranged on the bearing unit.

3. The wafer carrier for providing uniform temperature distribution as claimed in claim 2, characterized in that: The bearing unit is a titanium plate, and the thermal conductivity of the diffusion unit is greater than the thermal conductivity of the titanium plate.

4. The wafer carrier for providing uniform temperature distribution as claimed in claim 1, wherein: The area of ​​the protrusion is between 30% and 70% of the area of ​​the bearing surface of the body.

5. The wafer carrier for providing uniform temperature distribution as claimed in claim 1, wherein: The height of the protrusion is between 0.3 mm and 1 mm.

6. The wafer carrier for providing uniform temperature distribution as claimed in claim 5, characterized in that: The diameter of the protrusion is approximately between 6 mm and 10 mm, and the spacing between adjacent protrusions is between 1 mm and 5 mm.

7. A wafer carrier for providing uniform temperature distribution, characterized in that: include: A support assembly comprising: At least one groove is disposed on a top surface of the support assembly; an air inlet line connected to the groove and used for delivering a gas to the groove located on the top surface; and a diffusion unit, used to carry at least one wafer and located on the top surface of the support assembly, wherein the diffusion unit is a porous material, comprising; a first diffusion region; A second diffusion region is located outside the first diffusion region, wherein the air permeability of the first diffusion region is different from the air permeability of the second diffusion region.

8. The wafer carrier for providing uniform temperature distribution as claimed in claim 7, wherein: The air permeability of the first diffusion region is greater than that of the second diffusion region.

9. The wafer carrier for providing uniform temperature distribution as claimed in claim 7, wherein: The first diffusion region is in a disk shape, and the second diffusion region is in a ring shape, and the second diffusion region is arranged around the first diffusion region. 10 . The wafer carrier for providing uniform temperature distribution as claimed in claim 7 , comprising a plurality of protrusions disposed on the first diffusion region and the second diffusion region, and at least one diffusion channel is formed between adjacent protrusions.

11. The wafer carrier for providing uniform temperature distribution as claimed in claim 7, wherein: The first diffusion region and the second diffusion region are made of foamed metal, and the foaming time and the foaming temperature of the first diffusion region and the second diffusion region are different.

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