IGBT (Insulated Gate Bipolar Translator) semiconductor module, direct-current bus chopping unit and current and frequency conversion device

Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Translator) semiconductor module, a direct-current bus chopping unit and a current and frequency conversion device. The semiconductor module comprises a base plate, two DCB plates with insulation and heat conduction effects, two IGBT chip sets, at least one diode chip set, at least two collector electrode copper sheets, at least two emitter electrode copper sheets, at least two gate electrode copper sheets, at least two module collector electrode terminals connected externally and at least two module emitter electrode terminals connected externally. The IGBT semiconductor module comprises at least one externally connected module gate pole pin, at least one externally connected module emitter pole pin, two groups of IGBT chip sets which are connected in parallel, diode chip sets which are connected in parallel, and all the IGBT chip sets and all the diode chip sets which are inversely connected in parallel, the IGBT semiconductor module uses an existing packaging shell, and IGBT chips and diode chips which are suitable for a chopper circuit are packaged in the IGBT semiconductor module. The semiconductor waste of the chopper circuit of the AC-DC conversion device is greatly reduced, the cost is reduced, and the size is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of current conversion and frequency conversion, and in particular to an IGBT semiconductor module, a DC bus chopper unit and a current conversion and frequency conversion device. Background Art

[0002] Three-phase AC / DC converters are usually used in motor control, power generation or power supply fields. In order to prevent overvoltage of the DC bus when an abnormality occurs in the system, a chopper circuit is usually added to the DC bus. The chopper circuit is as follows: Figure 1 As shown, its working principle is that when the DC bus voltage is greater than the chopping working set value, the switch tube of the chopping circuit is turned on, the DC power is consumed through the chopping resistor and the bus voltage is reduced; when the DC bus voltage is less than the working set value, the switch tube of the chopping circuit is turned off.

[0003] The chopper circuit has a short working time, and it is difficult to find a suitable semiconductor module on the market. Usually, a two-level half-bridge semiconductor module is used as the chopper circuit of the AC-DC converter. The internal circuit of the two-level half-bridge module is as follows: Figure 2 As shown, when the two-level half-bridge module 4 is used as the switch tube of the chopper circuit of the AC-DC converter, the circuit of the AC-DC converter is as shown in FIG. Figure 3 As shown, this solution has the following defects: the IGBT of the upper bridge is not utilized, and the utilization rate of the diodes of the upper bridge and the lower bridge is insufficient. Summary of the invention

[0004] The technical problem to be solved by the present invention is to propose an IGBT semiconductor module, which uses an existing packaging shell and internally encapsulates an IGBT chip and a diode chip suitable for a chopper circuit, greatly reducing the semiconductor waste of the chopper circuit of an AC / DC conversion device, reducing costs, reducing volume, and simplifying the design.

[0005] In order to solve the above technical problems, the present invention provides an IGBT semiconductor module, comprising a base plate, two DCB plates with insulation and heat conduction functions, two groups of IGBT chip groups, at least one group of diode chip groups, at least two collector copper sheets, at least two emitter copper sheets, at least two gate copper sheets, at least two externally connected module collector terminals, at least two externally connected module emitter terminals, at least one externally connected module gate pin, and at least one externally connected module emitter pin;

[0006] The bottom plate is rectangular, with a mounting hole at each of the four corners and a rectangular mounting surface at the top;

[0007] The lower surface of the DCB board is the bottom plate welding surface, and the upper surface is the copper sheet welding surface;

[0008] Each group of the IGBT chip group includes a plurality of IGBT chips, each of which includes three electrodes: a collector for current flow, an emitter for current flow, and a gate for controlling the conduction of the IGBT chip; each group of the diode chip group includes a plurality of diode chips, each of which includes two electrodes: an anode for current flow, and a cathode for current flow;

[0009] The upper surface of the bottom plate is a rectangle, and the long side of the rectangle runs left and right in a direction perpendicular to the upper surface of the bottom plate. The collector terminal of the first module is located at the upper left position of the bottom plate, the emitter terminal of the first module is located at the lower left position of the bottom plate, the collector terminal of the second module is located at the upper right position of the bottom plate, and the emitter terminal of the second module is located at the lower right position of the bottom plate. The first DCB board is welded to the left part of the bottom plate, and the second DCB board is welded to the right part of the bottom plate. The first collector copper sheet is located at the upper part of the first DCB board, the first emitter copper sheet is located at the lower part of the first DCB board, the second collector copper sheet is located at the upper part of the second DCB board, and the second emitter copper sheet is located at the lower part of the second DCB board;

[0010] The two IGBT chipsets include a first IGBT chipset and a second IGBT chipset;

[0011] The lower surface of the first DCB board and the lower surface of the second DCB board are welded on the bottom plate side by side, the first collector copper sheet, the first emitter copper sheet, and the first gate copper sheet are welded on the upper surface of the first DCB board, the second collector copper sheet, the second emitter copper sheet, and the second gate copper sheet are welded on the upper surface of the second DCB board, the collector of the first IGBT chipset is welded on the first collector copper sheet, the collector of the second IGBT chipset is welded on the second collector copper sheet, and the cathode of the diode chipset is welded on the collector copper sheet;

[0012] The collector terminal of the first module is connected to the first collector copper sheet by a binding wire, the emitter terminal of the first module is connected to the first emitter copper sheet by a binding wire, the collector terminal of the second module is connected to the second collector copper sheet by a binding wire, and the emitter terminal of the second module is connected to the second emitter copper sheet by a binding wire;

[0013] The emitter of the first IGBT chipset is connected to the first emitter copper foil by a bonding wire, the emitter of the second IGBT chipset is connected to the second emitter copper foil by a bonding wire, the gate of the first IGBT chipset is connected to the first gate copper foil by a bonding wire, the gate of the second IGBT chipset is connected to the second gate copper foil by a bonding wire, and the anode of the diode chipset is connected to the emitter of the IGBT chipset by a bonding wire;

[0014] The first gate copper sheet, the second gate copper sheet and the module gate pin are connected via a binding wire, and the first emitter copper sheet, the second emitter copper sheet and the module emitter pin are connected via a binding wire.

[0015] Preferably, the “at least one group of diode chip groups” is “two groups of diode chip groups”, the “cathode of the diode chip group is welded on the collector copper foil” is “the cathode of the first diode chip group is welded on the first collector copper foil, and the cathode of the second diode chip group is welded on the second collector copper foil”, and the “anode of the diode chip group is connected to the emitter of the IGBT chips group via a binding wire” is “the anode of the first diode chip group is connected to the emitter of the first IGBT chips group via a binding wire, and the anode of the second diode chip group is connected to the emitter of the second IGBT chips group via a binding wire”.

[0016] Preferably, the “at least one module gate pin connected to the outside” is “the IGBT semiconductor module includes two module gate pins connected to the outside”, the “at least one module emitter pin connected to the outside” is “the IGBT semiconductor module includes two emitter pins connected to the outside”, and the “the first gate copper skin, the second gate copper skin and the module gate pin connected to the outside are connected via binding wires, and the first emitter copper skin, the second emitter copper skin and the module emitter pin connected to the outside are connected via binding wires” is “the first gate pin is connected to the first gate copper skin via a binding wire, the first emitter pin is connected to the first emitter copper skin via a binding wire, the second gate pin is connected to the second gate copper skin via a binding wire, and the second emitter pin is connected to the second emitter copper skin via a binding wire”.

[0017] Preferably, the first collector copper skin is connected to the second collector copper skin via a bonding wire, and the first emitter copper skin is connected to the second emitter copper skin via a bonding wire.

[0018] Preferably, the sum of the capacities of all IGBT chips in the IGBT chipset is much greater than the sum of the capacities of all diodes in the diode chipset, where “much greater” means that the rated current capacity of the former is more than twice the rated current capacity of the latter.

[0019] Preferably, the first IGBT chipset comprises M IGBT chips, the collector of the first IGBT chip is welded to the upper left of the first collector copper sheet, the second IGBT chip is located at the lower right of the first IGBT chip and welded to the first collector copper sheet, the third IGBT chip is located at the lower right of the second IGBT chip and welded to the first collector copper sheet, ..., the Mth chip is located at the lower right of the M-1th IGBT chip and welded to the first collector copper sheet;

[0020] The second IGBT chipset comprises N IGBT chips, the collector of the first IGBT chip is welded to the lower left of the second collector copper sheet, the second IGBT chip is located at the upper right of the first IGBT chip and welded to the second collector copper sheet, the third IGBT chip is located at the upper right of the second IGBT chip and welded to the second collector copper sheet, ..., the Nth chip is located at the upper right of the N-1th IGBT chip and welded to the second collector copper sheet.

[0021] Preferably, the IGBT semiconductor module further comprises a module collector pin connected to the outside, and the module collector pin is connected to one of the first collector copper sheet or the second collector copper sheet via a binding wire.

[0022] Preferably, the IGBT semiconductor module is perpendicular to the upper surface of the base plate, and an insulating shell is provided on the upper part of the base plate along the four sides of the base plate. The DCB board is surrounded by the insulating shell, and the DCB board, copper sheet, IGBT chipset, diode chipset, and binding wires are all covered with insulating glue.

[0023] In order to solve the above technical problem, the present invention further discloses a DC bus chopper unit, wherein the DC bus chopper unit comprises the above-mentioned IGBT semiconductor module.

[0024] In order to solve the above technical problem, the present invention further discloses a current conversion and frequency conversion device, which adopts the above-mentioned IGBT semiconductor module.

[0025] After adopting the above module, the IGBT semiconductor module includes a base plate, two DCB boards with insulation and heat conduction functions, two groups of IGBT chipsets, at least one group of diode chipsets, at least two collector copper sheets, at least two emitter copper sheets, at least two gate copper sheets, at least two externally connected module collector terminals, at least two externally connected module emitter terminals, at least one externally connected module gate pin, and at least one externally connected module emitter pin; each group of the IGBT chipsets includes a number of IGBT chips, and each IGBT chip includes three electrodes: a collector for current flow, an emitter for current flow, and a gate for controlling the conduction of the IGBT chip; each group of the diode chipsets includes a number of diode chips, Each diode chip includes two poles: an anode into which current flows and a cathode out of which current flows; the upper surface of the bottom plate is a rectangle, and the long side of the rectangle runs left and right in a direction perpendicular to the upper surface of the bottom plate; the collector terminal of the first module is located at the upper left position of the bottom plate, the emitter terminal of the first module is located at the lower left position of the bottom plate, the collector terminal of the second module is located at the upper right position of the bottom plate, and the emitter terminal of the second module is located at the lower right position of the bottom plate; the first DCB board is welded to the left part of the bottom plate, and the second DCB board is welded to the right part of the bottom plate; the first collector copper sheet is located at the upper part of the first DCB board, the first emitter copper sheet is located at the lower part of the first DCB board, the second collector copper sheet is located at the upper part of the second DCB board, and the second emitter copper sheet is located at the lower part of the second DCB board; two groups of IGB The T chipset includes a first IGBT chipset and a second IGBT chipset; the lower surface of the first DCB board and the lower surface of the second DCB board are welded on the bottom plate side by side, the first collector copper foil, the first emitter copper foil and the first gate copper foil are welded on the upper surface of the first DCB board, the second collector copper foil, the second emitter copper foil and the second gate copper foil are welded on the upper surface of the second DCB board, the collector of the first IGBT chipset is welded on the first collector copper foil, the collector of the second IGBT chipset is welded on the second collector copper foil, and the cathode of the diode chipset is welded on the collector copper foil; the emitter of the first IGBT chipset is connected to the first emitter copper foil through a binding wire, and the emitter of the second IGBT chipset is welded to the collector copper foil. The first IGBT chipset is connected to the first gate copper foil by a binding wire, the second IGBT chipset is connected to the second gate copper foil by a binding wire, and the anode of the diode chipset is connected to the emitter of the IGBT chipset by a binding wire; the first gate copper foil, the second gate copper foil and the module gate pin are connected by a binding wire, and the first emitter copper foil, the second emitter copper foil and the module emitter pin are connected by a binding wire; the IGBT semiconductor module uses an existing packaging shell, and internally encapsulates an IGBT chip and a diode chip suitable for a chopper circuit, thereby greatly reducing semiconductor waste in a chopper circuit of an AC / DC conversion device, reducing costs, reducing volume, and simplifying design. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic diagram of a chopper circuit of an AC-DC-AC conversion device in the prior art;

[0027] Figure 2 A circuit diagram of a two-level half-bridge module commonly used in chopping AC-DC-AC conversion devices in the prior art;

[0028] Figure 3 A schematic diagram of using a two-level half-bridge module as a semiconductor device for a chopper circuit;

[0029] Figure 4 is a side cross-sectional view of an IGBT semiconductor module of the present invention;

[0030] Figure 5 The IGBT semiconductor module of the present invention is viewed from above Figure 1 and a schematic diagram of Embodiment 3;

[0031] Figure 6 For the invention of IGBT semiconductor module top view Figure 2 and a schematic diagram of Embodiment 4;

[0032] Figure 7 The IGBT semiconductor module of the present invention is viewed from above Figure 3 and a schematic diagram of Embodiment 5;

[0033] Figure 8 The IGBT semiconductor module of the present invention is viewed from above Figure 4 and a schematic diagram of Embodiment 6;

[0034] Fig. 9 The IGBT semiconductor module of the present invention is viewed from above Figure 5 and a schematic diagram of Embodiment 7;

[0035] Fig.10 A schematic diagram of a braking circuit using an IGBT semiconductor module of the present invention;

[0036] Fig.11 It is a comparison diagram between the braking circuit using the IGBT semiconductor module of the present invention and the prior art solution. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0038] Embodiment 1

[0039] See also Figure 4 and Figure 5, Figure 4 is a side sectional view of an IGBT semiconductor module of the present invention, Figure 5 The IGBT semiconductor module of the present invention is viewed from above Figure 1 and a schematic diagram of Embodiment 3;

[0040] The present embodiment discloses an IGBT semiconductor module 1, comprising a base plate 30, two DCB plates 13, 22 with insulation and heat conduction functions, two groups of IGBT chip groups 16, 18, at least one group of diode chip groups 171, at least two collector copper sheets 15, 19, at least two emitter copper sheets 14, 23, at least two gate copper sheets 261, 262, at least two externally connected module collector terminals 11, 20, at least two externally connected module emitter terminals 12, 21, at least one externally connected module gate pin 241, 242, at least one externally connected module emitter pin 251, 252;

[0041] The bottom plate 30 is rectangular, with a mounting hole at each of the four corners and a rectangular mounting surface at the top;

[0042] The lower surface of the DCB boards 13 and 22 is the bottom plate welding surface, and the upper surface is the copper sheet welding surface;

[0043] Each group of the IGBT chip group includes a plurality of IGBT chips, each of which includes three electrodes: a collector for current flow, an emitter for current flow, and a gate for controlling the conduction of the IGBT chip; each group of the diode chip group includes a plurality of diode chips, each of which includes two electrodes: an anode for current flow, and a cathode for current flow;

[0044] The upper surface of the bottom plate 30 is a rectangle, and the long side of the rectangle runs left and right in a direction perpendicular to the upper surface of the bottom plate. The first module collector terminal 11 is located at the upper left position of the bottom plate, the first module emitter terminal 12 is located at the lower left position of the bottom plate, the second module collector terminal 20 is located at the upper right position of the bottom plate, and the second module emitter terminal 21 is located at the lower right position of the bottom plate. The first DCB board 13 is welded to the left part of the bottom plate 30, and the second DCB board 22 is welded to the right part of the bottom plate 30. The first collector copper sheet 15 is located at the upper part of the first DCB board 13, the first emitter copper sheet 14 is located at the lower part of the first DCB board 13, the second collector copper sheet 19 is located at the upper part of the second DCB board 22, and the second emitter copper sheet 23 is located at the lower part of the second DCB board 22;

[0045] The two IGBT chipsets include a first IGBT chipset 16 and a second IGBT chipset 18;

[0046] The lower surface of the first DCB board 13 and the lower surface of the second DCB board 22 are welded side by side on the bottom plate 30, the first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded on the upper surface of the first DCB board 13, the second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded on the upper surface of the second DCB board 22, the collector of the first IGBT chipset 16 is welded on the first collector copper foil 15, the collector of the second IGBT chipset 18 is welded on the second collector copper foil 19, and the cathode of the diode chipset 17 is welded on the collector copper foils 15 and 19;

[0047] The first module collector terminal 11 is connected to the first collector copper sheet 15 by a binding wire, the first module emitter terminal 12 is connected to the first emitter copper sheet 14 by a binding wire, the second module collector terminal 20 is connected to the second collector copper sheet 19 by a binding wire, and the second module emitter terminal 21 is connected to the second emitter copper sheet 23 by a binding wire;

[0048] The emitter of the first IGBT chipset 16 is connected to the first emitter copper foil 14 via a bonding wire, the emitter of the second IGBT chipset 18 is connected to the second emitter copper foil 23 via a bonding wire, the gate of the first IGBT chipset 16 is connected to the first gate copper foil 261 via a bonding wire, the gate of the second IGBT chipset 18 is connected to the second gate copper foil 262 via a bonding wire, and the anode of the diode chipset 17 is connected to the emitter of the IGBT chipset via a bonding wire;

[0049] The first gate copper foil 261 , the second gate copper foil 262 and the module gate pin 24 are connected via a bonding wire, and the first emitter copper foil 14 , the second emitter copper foil 23 and the module emitter pin 25 are connected via a bonding wire.

[0050] Embodiment 2

[0051] This embodiment is based on the first embodiment.

[0052] In this embodiment, the first collector copper skin 15 and the second collector copper skin 19 are connected by a bonding wire, and the first emitter copper skin 14 and the second emitter copper skin 23 are connected by a bonding wire.

[0053] The sum of the capacities of all IGBT chips in the IGBT chipset is much greater than the sum of the capacities of all diodes in the diode chipset, where "much greater" means that the rated current capacity of the former is more than twice the rated current capacity of the latter.

[0054] In this embodiment, the first IGBT chip group 16 includes M IGBT chips, the collector of the first IGBT chip is welded to the upper left of the first collector copper sheet, the second IGBT chip is located at the lower right of the first IGBT chip and welded to the first collector copper sheet, the third IGBT chip is located at the lower right of the second IGBT chip and welded to the first collector copper sheet, ..., the Mth chip is located at the lower right of the M-1th IGBT chip and welded to the first collector copper sheet;

[0055] The second IGBT chipset 18 comprises N IGBT chips, the collector of the first IGBT chip is welded to the lower left of the second collector copper sheet, the second IGBT chip is located at the upper right of the first IGBT chip and welded to the second collector copper sheet, the third IGBT chip is located at the upper right of the second IGBT chip and welded to the second collector copper sheet, ..., the Nth chip is located at the upper right of the N-1th IGBT chip and welded to the second collector copper sheet.

[0056] In this embodiment, the IGBT semiconductor module is perpendicular to the upper surface of the base plate 30, and an insulating shell is arranged on the upper part of the base plate 30 along the four sides of the base plate. The DCB board is surrounded by the insulating shell, and the DCB board, copper sheet, IGBT chipset, diode chipset, and binding wires are all covered with insulating glue.

[0057] Embodiment 3

[0058] See also Figure 5 The present embodiment discloses an IGBT semiconductor module, comprising a base plate 30, two DCB plates 13, 22 with insulation and heat conduction functions, two groups of IGBT chip groups 16, 18, a group of diode chip groups 17, two collector copper sheets 15, 19, two emitter copper sheets 14, 23, two gate copper sheets 261, 262, two externally connected module collector terminals 11, 20, two externally connected module emitter terminals 12, 21, one externally connected module gate pin 24, and one externally connected module emitter pin 25.

[0059] The housing, base plate, DCB board, terminals, chips, pins, etc. can all use existing mature packaging components.

[0060] The bottom plate 30 is rectangular and is a copper plate with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface at the top.

[0061] The DCB plates 13 and 22 are aluminum oxide plates with excellent thermal conductivity, the lower surface of which is the bottom plate welding surface, and the upper surface of which is the copper sheet welding surface.

[0062] Each group of the IGBT chips includes three 1700V / 300A IGBT chips, and the IGBT chip includes three electrodes: a collector for current to flow in, an emitter for current to flow out, and a gate for controlling the conduction of the IGBT chip.

[0063] The diode chip group 17 includes a 1700V / 100A diode chip, and each diode chip includes two poles: an anode through which current flows in, and a cathode through which current flows out.

[0064] The upper surface of the base plate 30 is a rectangle, and the long side of the rectangle runs left and right in a direction perpendicular to the upper surface of the base plate 30. The first module collector terminal 11 is located at the upper left position of the base plate 30, the first module emitter terminal 12 is located at the lower left position of the base plate 30, the second module collector terminal 20 is located at the upper right position of the base plate 30, and the second module emitter terminal 21 is located at the lower right position of the base plate 30. The first DCB board 13 is welded to the left part of the base plate 30, and the second DCB board 22 is welded to the right part of the base plate 30. The first collector copper sheet 15 is located at the upper part of the first DCB board 13, the first emitter copper sheet 14 is located at the lower part of the first DCB board 13, the second collector copper sheet 19 is located at the upper part of the second DCB board 22, and the second emitter copper sheet 23 is located at the lower part of the second DCB board 22.

[0065] The lower surface of the first DCB board 13 and the lower surface of the second DCB board 22 are welded side by side on the base plate 30, the first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded on the upper surface of the first DCB board 13, the second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded on the upper surface of the second DCB board 22, the collector of the first IGBT chipset 16 is welded on the first collector copper foil 15, the collector of the second IGBT chipset 18 is welded on the second collector copper foil 19, and the cathode of the diode chipset 17 is welded on the first collector copper foil 15.

[0066] The first module collector terminal 11 is connected to the first collector copper sheet 15 via a binding wire, the first module emitter terminal 12 is connected to the first emitter copper sheet 14 via a binding wire, the second module collector terminal 20 is connected to the second collector copper sheet 19 via a binding wire, and the second module emitter terminal 21 is connected to the second emitter copper sheet 23 via a binding wire.

[0067] The emitter of the first IGBT chipset 16 is connected to the first emitter copper foil 14 via a bonding wire, the emitter of the second IGBT chipset 18 is connected to the second emitter copper foil 23 via a bonding wire, the anode of the diode chipset 17 is connected to the emitter of the first IGBT chipset 16 via a bonding wire, the gate of the first IGBT chipset 16 is connected to the first gate copper foil 261 via a bonding wire, and the gate of the second IGBT chipset 18 is connected to the second gate copper foil 262 via a bonding wire.

[0068] The first gate copper foil 261 and the second gate copper foil 262 are connected to the externally connected module gate pin 24 through a bonding wire, and the first emitter copper foil 14 and the second emitter copper foil 23 are connected to the externally connected module emitter pin 25 through a bonding wire.

[0069] The rated output capacity of the above-mentioned IGBT semiconductor module is 1700V / 1800A, and the IGBT semiconductor module is more suitable for a chopper module in the field of power conversion and frequency conversion.

[0070] When the above module is used in conjunction with an external freewheeling diode in the chopper module of the current and frequency conversion field, Fig.11 As shown, (a) is a chopper circuit 1 using the semiconductor module of the present invention, (b) is a chopper circuit using three 1700V / 600A semiconductor modules 2 of the prior art, and (c) is a chopper circuit using two 1700V / 900A semiconductor modules 3 of the prior art. The capacity of the chopper module using the present invention is equivalent to the capacity of the chopper module composed of two 1700V / 900A IGBT half-bridge modules, and is also equivalent to the capacity of the chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0071] Embodiment 4

[0072] See also Figure 6 In this embodiment, an IGBT semiconductor module 1 is disclosed, including a base plate 30, two DCB plates 13, 22 with insulation and heat conduction functions, two groups of IGBT chip groups, two groups of diode chip groups 171, 172, two collector copper sheets 15, 19, two emitter copper sheets 14, 23, two gate copper sheets 261, 262, two externally connected module collector terminals 11, 20, two externally connected module emitter terminals 12, 21, one externally connected module gate pin 24, and one externally connected module emitter pin 25.

[0073] The housing, base plate, DCB board, terminals, chips, pins, etc. can all use existing mature packaging components.

[0074] The bottom plate is rectangular and is a copper plate with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface at the top.

[0075] The DCB board is an aluminum oxide board with excellent thermal conductivity. The lower surface is the bottom plate welding surface and the upper surface is the copper sheet welding surface.

[0076] Each IGBT chipset includes three 1700V / 300A IGBT chips. The IGBT chip includes three electrodes: a collector through which current flows, an emitter through which current flows out, and a gate that controls the conduction of the IGBT chip.

[0077] The diode chip group includes a 1700V / 100A diode chip, and each diode chip includes two poles, an anode for current to flow into and a cathode for current to flow out.

[0078] The upper surface of the base plate 30 is a rectangle, and the long side of the rectangle runs left and right, perpendicular to the direction of the upper surface of the base plate. The first module collector terminal 11 is located at the upper left position of the base plate, the first module emitter terminal 12 is located at the lower left position of the base plate, the second module collector terminal 20 is located at the upper right position of the base plate, and the second module emitter terminal 21 is located at the lower right position of the base plate. The first DCB board 13 is welded to the left part of the base plate, and the second DCB board 22 is welded to the right part of the base plate. The first collector copper sheet 15 is located at the upper part of the first DCB board 13, the first emitter copper sheet 14 is located at the lower part of the first DCB board 13, the second collector copper sheet 19 is located at the upper part of the second DCB board 22, and the second emitter copper sheet 23 is located at the lower part of the second DCB board 22.

[0079] The lower surface of the first DCB board 13 and the lower surface of the second DCB board 22 are welded on the base plate 30 side by side, the first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded on the upper surface of the first DCB board 13, the second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded on the upper surface of the second DCB board 22, the collector of the first IGBT chipset 16 is welded on the first collector copper foil 15, the collector of the second IGBT chipset 18 is welded on the second collector copper foil 19, the cathode of the first diode chipset 171 is welded on the first collector copper foil 15, and the cathode of the second diode chipset 172 is welded on the second collector copper foil 19.

[0080] The first module collector terminal 11 is connected to the first collector copper sheet 15 via a binding wire, the first module emitter terminal 12 is connected to the first emitter copper sheet 14 via a binding wire, the second module collector terminal 20 is connected to the second collector copper sheet 19 via a binding wire, and the second module emitter terminal 21 is connected to the second emitter copper sheet 23 via a binding wire.

[0081] The emitter of the first IGBT chipset 16 is connected to the first emitter copper foil 14 via a bonding wire, the emitter of the second IGBT chipset 18 is connected to the second emitter copper foil 23 via a bonding wire, the anode of the first diode chipset 171 is connected to the emitter of the first IGBT chipset 16 via a bonding wire, the anode of the second diode chipset 172 is connected to the emitter of the second IGBT chipset 18 via a bonding wire, the gate of the first IGBT chipset 16 is connected to the first gate copper foil 261 via a bonding wire, and the gate of the second IGBT chipset 18 is connected to the second gate copper foil 262 via a bonding wire.

[0082] The first gate copper foil 261 and the second gate copper foil 262 are connected to the externally connected module gate pin 24 through a bonding wire, and the first emitter copper foil 14 and the second emitter copper foil 23 are connected to the externally connected module emitter pin 25 through a bonding wire.

[0083] The rated output capacity of the above-mentioned IGBT semiconductor module is 1700V / 1800A, and the IGBT semiconductor module is more suitable for a chopper module in the field of power conversion and frequency conversion.

[0084] When the above module is used in conjunction with an external freewheeling diode in the chopper module of the current and frequency conversion field, Fig.11 As shown, (a) is a chopper circuit 1 using the semiconductor module of the present invention, (b) is a chopper circuit using three 1700V / 600A semiconductor modules 2 of the prior art, and (c) is a chopper circuit using two 1700V / 900A semiconductor modules 3 of the prior art. The capacity of the chopper module using the present invention is equivalent to the capacity of the chopper module composed of two 1700V / 900A IGBT half-bridge modules, and is also equivalent to the capacity of the chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0085] Embodiment 5

[0086] See also Figure 7 The present embodiment discloses an IGBT semiconductor module 1, comprising a base plate 30, two DCB plates 13, 22 with insulation and heat conduction functions, two groups of IGBT chip groups 16, 18, two groups of diode chip groups 171, 172, two collector copper sheets 15, 19, two emitter copper sheets 14, 23, two gate copper sheets 261, 262, two externally connected module collector terminals 11, 20, two externally connected module emitter terminals 12, 21, two externally connected module gate pins 241, 242, and two externally connected module emitter pins 251, 252.

[0087] The housing, base plate, DCB board, terminals, chips, pins, etc. can all use existing mature packaging components.

[0088] The bottom plate 30 is rectangular and is a copper plate with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface at the top.

[0089] The DCB board is an aluminum oxide board with excellent thermal conductivity. The lower surface is the bottom plate welding surface and the upper surface is the copper sheet welding surface.

[0090] Each IGBT chipset includes three 1700V / 300A IGBT chips. The IGBT chip includes three electrodes: a collector through which current flows, an emitter through which current flows out, and a gate for controlling the conduction of the IGBT chip.

[0091] The diode chip group includes a 1700V / 100A diode chip, and each diode chip includes two poles, an anode for current to flow into and a cathode for current to flow out.

[0092] The upper surface of the base plate 30 is a rectangle, and the long side of the rectangle runs left and right in a direction perpendicular to the upper surface of the base plate. The first module collector terminal 11 is located at the upper left position of the base plate 30, the first module emitter terminal 12 is located at the lower left position of the base plate, the second module collector terminal 20 is located at the upper right position of the base plate, and the second module emitter terminal 21 is located at the lower right position of the base plate. The first DCB board 13 is welded to the left part of the base plate 30, and the second DCB board 22 is welded to the right part of the base plate 30. The first collector copper sheet 15 is located at the upper part of the first DCB board 13, the first emitter copper sheet 14 is located at the lower part of the first DCB board 13, the second collector copper sheet 19 is located at the upper part of the second DCB board 22, and the second emitter copper sheet 23 is located at the lower part of the second DCB board 22.

[0093] The lower surface of the first DCB board 13 and the lower surface of the second DCB board 22 are welded on the base plate 30 side by side, the first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded on the upper surface of the first DCB board 13, the second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded on the upper surface of the second DCB board 22, the collector of the first IGBT chipset 16 is welded on the first collector copper foil 15, the collector of the second IGBT chipset 18 is welded on the second collector copper foil 19, the cathode of the first diode chipset 171 is welded on the first collector copper foil 15, and the cathode of the second diode chipset 172 is welded on the second collector copper foil 19.

[0094] The first module collector terminal 11 is connected to the first collector copper skin 15 through a binding wire, the first module emitter terminal 12 is connected to the first emitter copper skin 14 through a binding wire, the second module collector terminal 20 is connected to the second collector copper skin 19 through a binding wire, and the second module emitter terminal 21 is connected to the second emitter copper skin 23 through a binding wire.

[0095] The emitter of the first IGBT chipset 16 is connected to the first emitter copper foil 14 via a bonding wire, the emitter of the second IGBT chipset 18 is connected to the second emitter copper foil 23 via a bonding wire, the anode of the first diode chipset 171 is connected to the emitter of the first IGBT chipset 16 via a bonding wire, the anode of the second diode chipset 172 is connected to the emitter of the second IGBT chipset 18 via a bonding wire, the gate of the first IGBT chipset 16 is connected to the first gate copper foil 261 via a bonding wire, and the gate of the second IGBT chipset 18 is connected to the second gate copper foil 262 via a bonding wire.

[0096] The first module gate pin 241 is connected to the first gate copper foil 261 through a bonding wire, the first module emitter pin 251 is connected to the first emitter copper foil 14 through a bonding wire, the second module gate pin 242 is connected to the second gate copper foil 262 through a bonding wire, and the second module emitter pin 252 is connected to the second emitter copper foil 23 through a bonding wire.

[0097] The rated output capacity of the above-mentioned IGBT semiconductor module is 1700V / 1800A, and the IGBT semiconductor module is more suitable for a chopper module in the field of power conversion and frequency conversion.

[0098] When the above module is used in conjunction with an external freewheeling diode in the chopper module of the current and frequency conversion field, Fig.11 As shown, (a) is a chopper circuit 1 using the semiconductor module of the present invention, (b) is a chopper circuit using three 1700V / 600A semiconductor modules 2 of the prior art, and (c) is a chopper circuit using two 1700V / 900A semiconductor modules 3 of the prior art. The capacity of the chopper module using the present invention is equivalent to the capacity of the chopper module composed of two 1700V / 900A IGBT half-bridge modules, and is also equivalent to the capacity of the chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0099] Embodiment 6

[0100] See also Figure 8This embodiment discloses an IGBT semiconductor module 1, comprising a base plate 30, two DCB plates 13, 22 with insulation and heat conduction functions, two IGBT chip groups 16, 18, two diode chip groups 171, 172, two collector copper sheets 15, 19, two emitter copper sheets 14, 23, two gate copper sheets 261, 262, two externally connected module collector terminals 11, 20, two externally connected module emitter terminals 12, 21, two externally connected module gate pins 241, 242, and two externally connected module emitter pins 251, 252;

[0101] The housing, base plate, DCB board, terminals, chips, pins, etc. can all use existing mature packaging components.

[0102] The bottom plate is rectangular and is a copper plate with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface at the top.

[0103] The DCB board is an aluminum oxide board with excellent thermal conductivity, the lower surface of which is a bottom plate welding surface, and the upper surface of which is a copper sheet welding surface.

[0104] Each IGBT chip group includes three 1700V / 300A IGBT chips, and each IGBT chip includes three electrodes: a collector for current to flow in, an emitter for current to flow out, and a gate for controlling the conduction of the IGBT chip.

[0105] The diode chip group includes a 1700V / 100A diode chip, and each diode chip includes two poles, an anode for current to flow into, and a cathode for current to flow out.

[0106] The upper surface of the base plate 30 is a rectangle, and the long side of the rectangle runs left and right in a direction perpendicular to the upper surface of the base plate. The first module collector terminal 11 is located at the upper left position of the base plate 30, the first module emitter terminal 12 is located at the lower left position of the base plate 30, the second module collector terminal 20 is located at the upper right position of the base plate 30, and the second module emitter terminal 21 is located at the lower right position of the base plate 30. The first DCB board 13 is welded to the left part of the base plate 30, and the second DCB board 22 is welded to the right part of the base plate 30. The first collector copper sheet 15 is located at the upper part of the first DCB board 13, the first emitter copper sheet 14 is located at the lower part of the first DCB board 13, the second collector copper sheet 19 is located at the upper part of the second DCB board 22, and the second emitter copper sheet 23 is located at the lower part of the second DCB board 22.

[0107] The lower surface of the first DCB board 13 and the lower surface of the second DCB board 22 are welded side by side on the base plate 30, the first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded on the upper surface of the first DCB board 13, the second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded on the upper surface of the second DCB board 22, the collector of the first IGBT chipset 16 is welded on the first collector copper foil 15, the collector of the second IGBT chipset 18 is welded on the second collector copper foil 19, the cathode of the first diode chipset 171 is welded on the first collector copper foil 15, and the cathode of the second diode chipset 172 is welded on the second collector copper foil 19.

[0108] The first module collector terminal 11 is connected to the first collector copper skin 15 through a binding wire, the first module emitter terminal 12 is connected to the first emitter copper skin 14 through a binding wire, the second module collector terminal 20 is connected to the second collector copper skin 19 through a binding wire, and the second module emitter terminal 21 is connected to the second emitter copper skin 23 through a binding wire.

[0109] The emitter of the first IGBT chipset 16 is connected to the first emitter copper foil 14 via a bonding wire, the emitter of the second IGBT chipset 18 is connected to the second emitter copper foil 23 via a bonding wire, the anode of the first diode chipset 171 is connected to the emitter of the first IGBT chipset 16 via a bonding wire, the anode of the second diode chipset 172 is connected to the emitter of the second IGBT chipset 18 via a bonding wire, the gate of the first IGBT chipset 16 is connected to the first gate copper foil 261 via a bonding wire, and the gate of the second IGBT chipset 18 is connected to the second gate copper foil 262 via a bonding wire.

[0110] The first collector copper foil 15 is connected to the second collector copper foil 19 by a bonding wire, and the first emitter copper foil 14 is connected to the second emitter copper foil 23 by a bonding wire. This connection can ensure a better current sharing effect between the first IGBT chipset 16 and the second IGBT chipset 18.

[0111] The first module gate pin 241 is connected to the first gate copper foil 261 through a bonding wire, the first module emitter pin 251 is connected to the first emitter copper foil 14 through a bonding wire, the second module gate pin 242 is connected to the second gate copper foil 262 through a bonding wire, and the second module emitter pin 252 is connected to the second emitter copper foil 23 through a bonding wire.

[0112] The rated output capacity of the above-mentioned IGBT semiconductor module is 1700V / 1800A, and the IGBT semiconductor module is more suitable for a chopper module in the field of power conversion and frequency conversion.

[0113] When the above module is used in conjunction with an external freewheeling diode in the chopper module of the current and frequency conversion field, Fig.11 As shown, (a) is a chopper circuit using the semiconductor module of the present invention, (b) is a chopper circuit using three 1700V / 600A semiconductor modules 2 of the prior art, and (c) is a chopper circuit using two 1700V / 900A semiconductor modules 3 of the prior art. The capacity of the chopper module using the present invention is equivalent to the capacity of the chopper module composed of two 1700V / 900A IGBT half-bridge modules, and is also equivalent to the capacity of the chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0114] Embodiment 7

[0115] See also Fig. 9 The present embodiment discloses an IGBT semiconductor module 1, comprising a base plate 30, two DCB plates 13, 22 with insulation and heat conduction functions, two IGBT chip groups 16, 18, two diode chip groups 171, 172, two collector copper sheets 15, 19, two emitter copper sheets 14, 23, two gate copper sheets 261, 262, two externally connected module collector terminals 11, 20, two externally connected module emitter terminals 12, 21, two externally connected module gate pins 241, 242, two externally connected module emitter pins 251, 252, and two externally connected module collector pins 27;

[0116] The housing, base plate, DCB board, terminals, chips, pins, etc. can all use existing mature packaging components;

[0117] The bottom plate is rectangular and is a copper plate with excellent thermal conductivity. Each of the four corners has a mounting hole and a rectangular mounting surface on the top.

[0118] The DCB board is an aluminum oxide board with excellent thermal conductivity, the lower surface is the bottom plate welding surface, and the upper surface is the copper sheet welding surface;

[0119] Each IGBT chipset includes three 1700V / 300A IGBT chips, and the IGBT chip includes three electrodes, a collector for current flow, an emitter for current flow, and a gate for controlling the conduction of the IGBT chip;

[0120] The diode chip set includes one 1700V / 100A diode chip, and each diode chip includes two poles, an anode for current flow into and a cathode for current flow out;

[0121] The upper surface of the bottom plate 30 is a rectangle, and the long side of the rectangle runs left and right in a direction perpendicular to the upper surface of the bottom plate. The first module collector terminal 11 is located at the upper left position of the bottom plate, the first module emitter terminal 12 is located at the lower left position of the bottom plate, the second module collector terminal 20 is located at the upper right position of the bottom plate, and the second module emitter terminal 21 is located at the lower right position of the bottom plate. The first DCB board 13 is welded to the left part of the bottom plate 30, and the second DCB board 22 is welded to the right part of the bottom plate 30. The first collector copper sheet 15 is located at the upper part of the first DCB board 13, the first emitter copper sheet 14 is located at the lower part of the first DCB board 13, the second collector copper sheet 19 is located at the upper part of the second DCB board 22, and the second emitter copper sheet 23 is located at the lower part of the second DCB board 22;

[0122] The lower surface of the first DCB board 13 and the lower surface of the second DCB board 22 are welded side by side on the bottom plate 30, the first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded on the upper surface of the first DCB board 13, the second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded on the upper surface of the second DCB board 22, the collector of the first IGBT chipset 16 is welded on the first collector copper foil 15, the collector of the second IGBT chipset 18 is welded on the second collector copper foil 19, the cathode of the first diode chipset 171 is welded on the first collector copper foil 15, and the cathode of the second diode chipset 172 is welded on the second collector copper foil 19;

[0123] The first module collector terminal 11 is connected to the first collector copper sheet 15 by a binding wire, the first module emitter terminal 12 is connected to the first emitter copper sheet 14 by a binding wire, the second module collector terminal 20 is connected to the second collector copper sheet 19 by a binding wire, and the second module emitter terminal 21 is connected to the second emitter copper sheet 23 by a binding wire;

[0124] The emitter of the first IGBT chipset 16 is connected to the first emitter copper foil 14 via a bonding wire, the emitter of the second IGBT chipset 18 is connected to the second emitter copper foil 23 via a bonding wire, the anode of the first diode chipset 171 is connected to the emitter of the first IGBT chipset 16 via a bonding wire, the anode of the second diode chipset 172 is connected to the emitter of the second IGBT chipset 18 via a bonding wire, the gate of the first IGBT chipset 16 is connected to the first gate copper foil 261 via a bonding wire, and the gate of the second IGBT chipset 18 is connected to the second gate copper foil 262 via a bonding wire;

[0125] The first collector copper foil 15 is connected to the second collector copper foil 19 by a bonding wire, and the first emitter copper foil 14 is connected to the second emitter copper foil 23 by a bonding wire. This connection can ensure a better current sharing effect between the first IGBT chipset 16 and the second IGBT chipset 18.

[0126] The first module gate pin 241 is connected to the first gate copper foil 261 through a bonding wire, the first module emitter pin 251 is connected to the first emitter copper foil 14 through a bonding wire, the second module gate pin 242 is connected to the second gate copper foil 262 through a bonding wire, the second module emitter pin 252 is connected to the second emitter copper foil 23 through a bonding wire, and the module collector pin 27 is connected to the first collector copper foil 15 through a bonding wire;

[0127] The rated output capacity of the above-mentioned IGBT semiconductor module is 1700V / 1800A, and the IGBT semiconductor module is more suitable for a chopper module in the field of current and frequency conversion;

[0128] When the above module is used in conjunction with an external freewheeling diode in the chopper module of the current and frequency conversion field, Fig.11 As shown, (a) is a chopper circuit 1 using the semiconductor module of the present invention, (b) is a chopper circuit using three 1700V / 600A semiconductor modules 2 of the prior art, and (c) is a chopper circuit using two 1700V / 900A semiconductor modules 3 of the prior art. The capacity of the chopper module using the present invention is equivalent to the capacity of the chopper module composed of two 1700V / 900A IGBT half-bridge modules, and is also equivalent to the capacity of the chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0129] Embodiment 8

[0130] This embodiment discloses a DC bus chopper unit, which includes the IGBT semiconductor module described in any one of Embodiments 1 to 7.

[0131] Embodiment 9

[0132] This embodiment discloses a current conversion and frequency conversion device, which uses the IGBT semiconductor module described in any one of Embodiments 1 to 7.

[0133] The preferred embodiments of the present application are described above with reference to the accompanying drawings, but the scope of the present application is not limited thereby. Any modification, equivalent substitution and improvement made by a person skilled in the art without departing from the scope and essence of the present application shall be within the scope of the present application.

Claims

1. An IGBT semiconductor module, characterized in that: It includes a base plate, two DCB plates with insulation and heat conduction functions, two groups of IGBT chipsets, at least one group of diode chipsets, at least two collector copper sheets, at least two emitter copper sheets, at least two gate copper sheets, at least two externally connected module collector terminals, at least two externally connected module emitter terminals, at least one externally connected module gate pin, and at least one externally connected module emitter pin; The bottom plate is rectangular, with a mounting hole at each of the four corners and a rectangular mounting surface at the top; The lower surface of the DCB board is the bottom plate welding surface, and the upper surface is the copper sheet welding surface; Each group of the IGBT chip group includes a plurality of IGBT chips, each of which includes three electrodes: a collector for current flow, an emitter for current flow, and a gate for controlling the conduction of the IGBT chip; each group of the diode chip group includes a plurality of diode chips, each of which includes two electrodes: an anode for current flow, and a cathode for current flow; The upper surface of the bottom plate is a rectangle, and the long side of the rectangle runs left and right in a direction perpendicular to the upper surface of the bottom plate. The collector terminal of the first module is located at the upper left position of the bottom plate, the emitter terminal of the first module is located at the lower left position of the bottom plate, the collector terminal of the second module is located at the upper right position of the bottom plate, and the emitter terminal of the second module is located at the lower right position of the bottom plate. The first DCB board is welded to the left part of the bottom plate, and the second DCB board is welded to the right part of the bottom plate. The first collector copper sheet is located at the upper part of the first DCB board, the first emitter copper sheet is located at the lower part of the first DCB board, the second collector copper sheet is located at the upper part of the second DCB board, and the second emitter copper sheet is located at the lower part of the second DCB board; The two IGBT chipsets include a first IGBT chipset and a second IGBT chipset; The lower surface of the first DCB board and the lower surface of the second DCB board are welded on the bottom plate side by side, the first collector copper sheet, the first emitter copper sheet, and the first gate copper sheet are welded on the upper surface of the first DCB board, the second collector copper sheet, the second emitter copper sheet, and the second gate copper sheet are welded on the upper surface of the second DCB board, the collector of the first IGBT chipset is welded on the first collector copper sheet, the collector of the second IGBT chipset is welded on the second collector copper sheet, and the cathode of the diode chipset is welded on the collector copper sheet; The collector terminal of the first module is connected to the first collector copper sheet by a binding wire, the emitter terminal of the first module is connected to the first emitter copper sheet by a binding wire, the collector terminal of the second module is connected to the second collector copper sheet by a binding wire, and the emitter terminal of the second module is connected to the second emitter copper sheet by a binding wire; The emitter of the first IGBT chipset is connected to the first emitter copper foil by a bonding wire, the emitter of the second IGBT chipset is connected to the second emitter copper foil by a bonding wire, the gate of the first IGBT chipset is connected to the first gate copper foil by a bonding wire, the gate of the second IGBT chipset is connected to the second gate copper foil by a bonding wire, and the anode of the diode chipset is connected to the emitter of the IGBT chipset by a bonding wire; The first gate copper sheet, the second gate copper sheet and the module gate pin are connected via a binding wire, and the first emitter copper sheet, the second emitter copper sheet and the module emitter pin are connected via a binding wire.

2. The IGBT semiconductor module according to claim 1, characterized in that: The “at least one group of diode chip groups” is “two groups of diode chip groups”, the “cathode of the diode chip group is welded on the collector copper foil” is “the cathode of the first diode chip group is welded on the first collector copper foil, and the cathode of the second diode chip group is welded on the second collector copper foil”, and the “anode of the diode chip group is connected to the emitter of the IGBT chip group via a binding wire” is “the anode of the first diode chip group is connected to the emitter of the first IGBT chip group via a binding wire, and the anode of the second diode chip group is connected to the emitter of the second IGBT chip group via a binding wire”.

3. The IGBT semiconductor module according to claim 1, characterized in that: The "at least one module gate pin connected to the outside" means "the IGBT semiconductor module includes two module gate pins connected to the outside", the "at least one module emitter pin connected to the outside" means "the IGBT semiconductor module includes two emitter pins connected to the outside", and the "the first gate copper skin, the second gate copper skin and the module gate pin connected to the outside are connected via binding wires, and the first emitter copper skin, the second emitter copper skin and the module emitter pin connected to the outside are connected via binding wires" means "the first gate pin is connected to the first gate copper skin via binding wires, the first emitter pin is connected to the first emitter copper skin via binding wires, the second gate pin is connected to the second gate copper skin via binding wires, and the second emitter pin is connected to the second emitter copper skin via binding wires".

4. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that: The first collector copper skin is connected to the second collector copper skin via a bonding wire, and the first emitter copper skin is connected to the second emitter copper skin via a bonding wire.

5. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that: The sum of the capacities of all IGBT chips in the IGBT chipset is much greater than the sum of the capacities of all diodes in the diode chipset, where "much greater" means that the rated current capacity of the former is more than twice the rated current capacity of the latter.

6. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that: The first IGBT chipset comprises M IGBT chips, the collector of the first IGBT chip is welded to the upper left of the first collector copper sheet, the second IGBT chip is located at the lower right of the first IGBT chip and welded to the first collector copper sheet, the third IGBT chip is located at the lower right of the second IGBT chip and welded to the first collector copper sheet, ..., the Mth chip is located at the lower right of the M-1th IGBT chip and welded to the first collector copper sheet; The second IGBT chipset comprises N IGBT chips, the collector of the first IGBT chip is welded to the lower left of the second collector copper sheet, the second IGBT chip is located at the upper right of the first IGBT chip and welded to the second collector copper sheet, the third IGBT chip is located at the upper right of the second IGBT chip and welded to the second collector copper sheet, ..., the Nth chip is located at the upper right of the N-1th IGBT chip and welded to the second collector copper sheet.

7. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that: The IGBT semiconductor module further comprises a module collector pin connected to the outside, and the module collector pin is connected to one of the first collector copper sheet or the second collector copper sheet via a binding wire.

8. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that: The IGBT semiconductor module is perpendicular to the upper surface of the base plate, and an insulating shell is arranged on the upper part of the base plate along the four sides of the base plate. The DCB board is surrounded by the insulating shell. The DCB board, copper sheet, IGBT chipset, diode chipset, and binding wires are all covered with insulating glue.

9. A DC bus chopper unit, characterized in that: The DC bus chopper unit comprises the IGBT semiconductor module according to any one of claims 1 to 3.

10. A current and frequency conversion device, characterized in that: The current and frequency conversion device adopts the IGBT semiconductor module described in any one of claims 1 to 3.

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