Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the steps that a substrate is provided, and at least one groove is formed in the substrate; forming a first barrier sub-layer on the side wall and the bottom of the groove and on the surface of the substrate; the first barrier sub-layer comprises a barrier material of which the proportion of a first crystal orientation in all crystal orientations is greater than a first preset value; forming a second blocking sub-layer on the side wall and the bottom of the groove and the first blocking sub-layer on the surface of the substrate; the second barrier sub-layer comprises a barrier material of which the proportion of a second crystal orientation in all crystal orientations is greater than a second preset value; wherein the first crystal orientation is different from the second crystal orientation.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, and more particularly to a semiconductor structure and a method for manufacturing the same. Background Art

[0002] As the size of semiconductor structures continues to shrink, the aspect ratio of contact holes and vias continues to increase, which brings constant challenges to the chemical vapor deposition (CVD) process of metal tungsten (W). In the field of semiconductor technology, chemical vapor deposition of metal tungsten is often used to achieve metal interconnection of contact holes or vias.

[0003] At present, when chemical vapor deposition of metal tungsten is performed, the metal tungsten may hang over the contact hole or through hole, causing a void or seam in the metal tungsten in the contact hole or through hole, resulting in an overhang effect. The overhang effect may cause the electrical performance of the semiconductor structure to decrease and reduce the product yield.

[0004] Therefore, there is an urgent need to provide an improved method for manufacturing a semiconductor structure to increase the yield of the product. Summary of the invention

[0005] In view of this, an embodiment of the present disclosure provides a semiconductor structure and a method for manufacturing the same.

[0006] To achieve the above objectives, the technical solution of the present disclosure is implemented as follows:

[0007] In a first aspect, an embodiment of the present disclosure provides a method for manufacturing a semiconductor structure, the method comprising:

[0008] providing a substrate having at least one trench formed therein;

[0009] forming a first blocking sublayer on the sidewall and bottom of the trench and on the surface of the substrate; the first blocking sublayer comprises a blocking material in which the proportion of the first crystal orientation in all crystal orientations is greater than a first preset value;

[0010] A second blocking sublayer is formed on the sidewalls and bottom of the groove and the first blocking sublayer on the surface of the substrate; the second blocking sublayer includes a blocking material in which the proportion of the second crystal orientation in all crystal orientations is greater than a second preset value; wherein the first crystal orientation and the second crystal orientation are different.

[0011] In some embodiments, forming a first blocking sublayer on the sidewall and bottom of the trench and on the surface of the substrate includes:

[0012] Reacting the sidewall and bottom of the trench and the surface of the substrate with a first reactant and a second reactant to form a first blocking sublayer;

[0013] The forming of a second blocking sublayer on the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate comprises:

[0014] Using a first reactant and a second reactant to react on the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate to form a second blocking sublayer;

[0015] The ratio between the first reactant and the second reactant in forming the first blocking sublayer is different from the ratio between the first reactant and the second reactant in forming the second blocking sublayer.

[0016] In some embodiments, the material of the first blocking sublayer includes titanium nitride TiN; and forming the first blocking sublayer on the sidewall and bottom of the trench and on the surface of the substrate includes:

[0017] A first reactant ammonia NH3 having a first gas flow rate and a second reactant titanium tetrachloride TiCl4 having a second gas flow rate are reacted on the sidewalls and bottom of the groove and on the surface of the substrate to form a first blocking sublayer; wherein the ratio between the first gas flow rate and the second gas flow rate is less than 30.

[0018] In some embodiments, the material of the second blocking sublayer includes TiN; and forming the second blocking sublayer on the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate includes:

[0019] A first reactant NH3 having a third gas flow rate and a second reactant TiCl4 having a fourth gas flow rate are reacted on the sidewalls and bottom of the groove and the first blocking sublayer on the surface of the substrate to form a second blocking sublayer; wherein the ratio between the third gas flow rate and the fourth gas flow rate is greater than 30.

[0020] In some embodiments, forming the first barrier sublayer has a first reaction time, forming the second barrier sublayer has a second reaction time, and a ratio between the first reaction time and the second reaction time is greater than 10.

[0021] In some embodiments, the first blocking sublayer and the second blocking sublayer together form a blocking layer, and the thickness of the blocking layer is 2 nm to 20 nm.

[0022] In some embodiments, the first crystal orientation is a (200) crystal orientation, and the second crystal orientation is a (111) crystal orientation.

[0023] In some embodiments, after forming the second blocking sublayer on the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate, the manufacturing method further includes:

[0024] A metal material layer is formed on the sidewall and bottom of the trench and the second barrier sublayer on the surface of the substrate.

[0025] In some embodiments, forming a metal material layer on the sidewall and bottom of the trench and the second barrier sublayer on the surface of the substrate includes:

[0026] forming an active atomic layer on the second blocking sublayer using a third reactant;

[0027] Using a fourth reactant to react with the active atomic layer to form a metal nucleation layer on the second barrier sublayer;

[0028] The fourth reactant and the fifth reactant are reacted to form a metal body layer on the metal nucleation layer.

[0029] In some embodiments, the third reactant includes diborane B2H6, and the active atomic layer includes a boron atomic layer; and / or,

[0030] The fourth reactant includes tungsten hexafluoride WF6; and / or,

[0031] The fifth reactant includes hydrogen H2.

[0032] In a second aspect, an embodiment of the present disclosure provides a semiconductor structure, the semiconductor structure comprising:

[0033] a substrate having at least one trench formed therein;

[0034] A first blocking sublayer covers the sidewalls and bottom of the trench and the surface of the substrate; the first blocking sublayer comprises a blocking material in which the proportion of the first crystal orientation in all crystal orientations is greater than a first preset value;

[0035] A second blocking sublayer, covering the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate; the second blocking sublayer comprises a blocking material whose proportion of the second crystal orientation in all crystal orientations is greater than a second preset value; wherein the first crystal orientation and the second crystal orientation are different;

[0036] A metal material layer covers the second blocking sublayer and fills the trench.

[0037] In some embodiments, the first blocking sublayer and the second blocking sublayer together form a blocking layer, and the thickness of the blocking layer is 2 nm to 20 nm.

[0038] In some embodiments, materials of the first barrier sublayer and the second barrier sublayer both include TiN; the first crystal orientation is a (200) crystal orientation, and the second crystal orientation is a (111) crystal orientation.

[0039] In some embodiments, the metal material layer includes tungsten W.

[0040] The disclosed embodiment provides a semiconductor structure and a method for manufacturing the same. In the disclosed embodiment, a first blocking sublayer whose first crystal orientation accounts for a larger proportion than a first preset value is first formed on the sidewall and bottom of the groove and the surface of the substrate, and then a second blocking sublayer whose second crystal orientation accounts for a larger proportion than a second preset value is formed. By utilizing the good step coverage of the first blocking sublayer of the first crystal orientation and the characteristic that the second blocking sublayer of the second crystal orientation is more conducive to forming a metal nucleation layer in a subsequent process, the first blocking sublayer and the second blocking sublayer of different crystal orientations are formed to reduce the probability of holes or seams appearing in the filling material in the groove, thereby improving the electrical performance of the semiconductor structure and further improving the yield of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 A schematic diagram of a cross-sectional structure of a titanium nitride layer provided as an example;

[0042] Figure 2 A schematic diagram of a cross-sectional structure during a chemical vapor deposition process of metal tungsten provided as an example;

[0043] Figure 3 A flowchart of forming a titanium nitride layer is provided as an example;

[0044] Figure 4 An X-ray diffraction pattern of a titanium nitride layer provided as an example;

[0045] Figure 5 A schematic diagram of a process for manufacturing a semiconductor structure provided by an embodiment of the present disclosure;

[0046] Figure 6 A schematic diagram of the cross-sectional structure of a first blocking sublayer and a second blocking sublayer provided in an embodiment of the present disclosure;

[0047] Fig. 7A A flowchart of forming a first blocking sublayer provided in an embodiment of the present disclosure;

[0048] Figure 7B A flowchart of forming a second blocking sublayer provided in an embodiment of the present disclosure;

[0049] Figure 8 is the X-ray diffraction pattern of titanium nitride formed under different ammonia gas flow rates;

[0050] Fig. 9 is the X-ray diffraction pattern of titanium nitride in different crystal orientations;

[0051] Fig.10 Electron microscope photos of titanium nitride with different crystal orientations;

[0052] Fig.11 is a graph showing the relationship between the step coverage of titanium nitride and the gas flow rate of titanium tetrachloride;

[0053] Fig.12 A schematic diagram of a cross-sectional structure during the process of forming a metal material layer provided in an embodiment of the present disclosure;

[0054] Fig.13A Schematic diagram of the decomposition of diborane on the surface of titanium nitride with (111) crystal orientation;

[0055] Fig. 13B are the activation energy and reaction energy of the decomposition of diborane on the surface of titanium nitride with (111) crystal orientation;

[0056] Fig. 13C Schematic diagram of the decomposition of diborane on the surface of titanium nitride in other crystal orientations;

[0057] Fig.13D is the activation energy and reaction energy of the decomposition of diborane on the surface of titanium nitride in other crystal orientations;

[0058] Fig.14 A schematic diagram of the principle of forming a metal nucleation layer provided in an embodiment of the present disclosure;

[0059] Fig.15 A schematic diagram of the cross-sectional structure of a semiconductor structure provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0060] The following will be combined with the embodiments of the present disclosure and the accompanying drawings to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0061] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0062] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0063] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present disclosure necessarily has the first element, component, region, layer or part.

[0064] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0065] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0066] In order to thoroughly understand the present disclosure, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present disclosure. The preferred embodiments of the present disclosure are described in detail below, but in addition to these detailed descriptions, the present disclosure may also have other implementations.

[0067] refer to Figure 1 , Figure 1 FIG. 1 is a schematic diagram of a cross-sectional structure of a titanium nitride layer provided as an example. Figure 1 As shown, the process of forming the titanium nitride layer 14 may include the following steps: a trench 12 (such as Figure 1 A titanium nitride layer 14 is formed on the sidewall and bottom of the trench 12 and on the surface of the substrate 10.

[0068] Usually, before chemical vapor deposition of metal tungsten, a titanium nitride layer is first deposited to prevent corrosion of the substrate by some reactants during the deposition of metal tungsten and to prevent peeling of the metal tungsten.

[0069] refer to Figure 2 , Figure 2 The cross-sectional structure diagram of the chemical vapor deposition process of tungsten metal is provided as an example. Figure 2 As shown in FIG. 2( a ), a soaking layer 16 is formed on the sidewall and bottom of the trench 12 and the titanium nitride layer 14 on the surface of the substrate 10 , for example, by using diborane (B 2 H 6 ) for soaking; Figure 2 As shown in FIG. (b), a tungsten nucleation layer (W Nucleation Layer) 18 is formed on the sidewalls and bottom of the trench 12 and the wetting layer 16 on the surface of the substrate 10, for example, by reacting diborane and tungsten hexafluoride (WF6); Figure 2 As shown in FIG. (c), a tungsten bulk layer (W Bulk Layer) 20 is formed on the sidewalls and bottom of the trench 12 and the tungsten nucleation layer 18 on the surface of the substrate 10; for example, hydrogen (H2) and tungsten hexafluoride are reacted. It should be noted that, Figure 2 FIG. (c) also shows that holes 22 are formed in the tungsten body layer 20 .

[0070] The current chemical vapor deposition process for metal tungsten is mainly divided into three steps: the first step is to use diborane to infiltrate the substrate for a long time to promote the nucleation of metal tungsten; the second step is to use diborane to reduce tungsten hexafluoride and pass it into the cavity in a pulsed manner to deposit a tungsten nucleation layer; the third step is to use hydrogen to reduce tungsten hexafluoride and deposit a tungsten bulk layer by chemical vapor deposition, that is, the reducing gas hydrogen and tungsten hexafluoride gas are simultaneously passed into the cavity to deposit the tungsten bulk layer.

[0071] refer to Figure 3 , Figure 3FIG. 1 is a flowchart of a process for forming a titanium nitride layer provided as an example. Figure 3 As shown, ammonia (NH3) with a gas flow rate B1 is carried by a carrier gas (e.g., nitrogen (N2)) with a gas flow rate D1, and titanium tetrachloride (TiCl4) with a gas flow rate A1 is carried by a carrier gas with a gas flow rate C1 to react on the sidewalls and bottom of the trench 12 and on the surface of the substrate 10 to form a titanium nitride layer 14.

[0072] refer to Figure 4 , Figure 4 An X-ray diffraction pattern of a titanium nitride layer is provided as an example. Figure 4 The X-ray diffraction pattern is shown with the horizontal axis being 2θ in degrees (°) and the vertical axis being intensity. Figure 4 Also shown are the diffraction peaks of the silicon substrate and the diffraction peaks of four different crystal directions of the titanium nitride layer, namely, the (111) crystal direction, the (200) crystal direction, the (220) crystal direction and the (222) crystal direction.

[0073] At present, when chemical vapor deposition of metal tungsten is performed, the titanium nitride layer formed is a mixed crystal orientation, and the metal tungsten may overhang above the contact hole or through hole, causing holes or seams in the metal tungsten in the contact hole or through hole, resulting in an overhang effect. The overhang effect may cause the electrical performance of the semiconductor structure to decrease and reduce the yield of the product.

[0074] In view of this, an embodiment of the present disclosure provides a semiconductor structure and a method for manufacturing the same.

[0075] refer to Figure 5 and Figure 6 , Figure 5 A schematic diagram of a process for manufacturing a semiconductor structure provided in an embodiment of the present disclosure. Figure 6 The cross-sectional structure diagram of the first barrier sublayer and the second barrier sublayer provided in the embodiment of the present disclosure. Figure 5 and Figure 6 , a process of forming a first blocking sublayer and a second blocking sublayer on the sidewall and bottom of the trench and on the surface of the substrate is described in detail.

[0076] like Figure 5 As shown, an embodiment of the present disclosure provides a method for manufacturing a semiconductor structure, the manufacturing method comprising:

[0077] Step S501: providing a substrate, wherein at least one groove is formed in the substrate;

[0078] Step S502: forming a first blocking sublayer on the sidewall and bottom of the trench and on the surface of the substrate; the first blocking sublayer comprises a blocking material in which the proportion of the first crystal orientation in all crystal orientations is greater than a first preset value;

[0079] Step S503: forming a second blocking sublayer on the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate; the second blocking sublayer comprises a blocking material whose proportion of the second crystal orientation in all crystal orientations is greater than a second preset value; wherein the first crystal orientation and the second crystal orientation are different.

[0080] like Figure 6 As shown, in the embodiment of the present disclosure, in step S501, a substrate 100 is provided, and at least one groove 102 (such as Figure 6 shown in the dashed box).

[0081] Here, the substrate may be a semiconductor substrate; specifically, it may include at least one elemental semiconductor material (e.g., a silicon (Si) substrate, a germanium (Ge) substrate, etc.), at least one III-V compound semiconductor material (e.g., a gallium nitride (GaN) substrate, a gallium arsenide (GaAs) substrate, an indium phosphide (InP) substrate, etc.), at least one II-VI compound semiconductor material, at least one organic semiconductor material, or other semiconductor materials known in the art, and may also include other substrates containing semiconductor materials, such as a silicon-on-insulator (SOI) substrate, a germanium-on-insulator (GeOI) substrate, a polycrystalline semiconductor layer on an insulating layer, a silicon-germanium substrate, etc. Alternatively, the substrate may be formed of a non-conductive material, such as glass, plastic, or a sapphire wafer, etc. The disclosed embodiments do not specifically limit the material of the substrate.

[0082] In a specific example, the material of the substrate may include silicon dioxide.

[0083] like Figure 6 As shown, in the embodiment of the present disclosure, in step S502, a first blocking sublayer 106 is formed on the sidewalls and bottom of the trench 102 and on the surface of the substrate 100; the first blocking sublayer 106 includes a blocking material in which the proportion of the first crystal orientation in all crystal orientations is greater than a first preset value.

[0084] Here, the first surface of the first blocking sublayer is in direct contact with the sidewall and bottom of the trench and the substrate surface, and the second surface of the first blocking sublayer is in direct contact with the second blocking sublayer formed in the subsequent process. Considering that the step coverage (SC) of the first blocking sublayer in the first crystal orientation is good, a blocking material whose proportion of the first crystal orientation in all crystal orientations is greater than a first preset value is selected to form the first blocking sublayer.

[0085] Generally, it is difficult to form a film layer with uniform thickness in places where there are faults or unevenness on the substrate surface. The step coverage is an indicator used to consider the thickness loss at the step when the film layer crosses the step, that is, the ratio between the thickness of the film layer at the step and the thickness of the film layer at the flat part. The step coverage can be the ratio between the thickness of the film layer covering the sidewall of the groove and the thickness of the film layer covering the surface of the substrate, or the step coverage can be the ratio between the thickness of the film layer covering the bottom of the groove and the thickness of the film layer covering the surface of the substrate. The closer the step coverage is to 1, the less the difference between the thickness of the film layer at the step (i.e., the sidewall and bottom of the groove) and the thickness of the film layer at the flat part (i.e., the surface of the substrate); the farther the step coverage is from 1, the thinner the thickness of the film layer at the step (i.e., the sidewall and bottom of the groove) is than the thickness of the film layer at the flat part (i.e., the surface of the substrate).

[0086] Here, the first crystal orientation of the first barrier sublayer accounts for a proportion greater than a first preset value in all crystal orientations. The embodiment of the present disclosure has no special limitation on the specific value of the first preset value.

[0087] like Figure 6 As shown, in the embodiment of the present disclosure, in step S503, a second blocking sublayer 108 is formed on the sidewalls and bottom of the groove 102 and the first blocking sublayer 106 on the surface of the substrate 100; the second blocking sublayer 108 includes a blocking material in which the proportion of the second crystal orientation in all crystal orientations is greater than a second preset value; wherein the first blocking sublayer 106 and the second blocking sublayer 108 together form a blocking layer 104, and the first crystal orientation and the second crystal orientation are different.

[0088] Here, the first surface of the second barrier sublayer is in direct contact with the sidewall and bottom of the trench and the first barrier sublayer on the substrate surface, and the second surface of the second barrier sublayer is in direct contact with the metal material layer formed in the subsequent process. Considering that the second barrier sublayer of the second crystal orientation is conducive to the nucleation of the metal material, a barrier material whose proportion of the second crystal orientation in all crystal orientations is greater than a second preset value is selected to form the second barrier sublayer.

[0089] Here, the second crystal orientation of the second blocking sublayer accounts for a larger proportion of all crystal orientations than a second preset value. The embodiment of the present disclosure has no special limitation on the specific value of the second preset value, and the second preset value may be, for example, 70%.

[0090] In some embodiments, the first preset value and the second preset value may be the same or different.

[0091] In the embodiment of the present disclosure, a first blocking sublayer in which the proportion of the first crystal orientation is greater than a first preset value is formed on the sidewalls and bottom of the groove and the surface of the substrate, and a second blocking sublayer in which the proportion of the second crystal orientation is greater than a second preset value is formed on the first blocking sublayer in which the proportion of the second crystal orientation is greater than a second preset value is formed on the sidewalls and bottom of the groove and the surface of the substrate. At the same time, the first blocking sublayer in the first crystal orientation has a good step coverage characteristic, and the second blocking sublayer in the second crystal orientation is more conducive to the formation of a metal nucleation layer in a subsequent process. The formation of first blocking sublayers and second blocking sublayers with different crystal orientations can reduce the probability of holes or seams appearing in the filling material in the groove, thereby improving the electrical performance of the semiconductor structure and further improving the yield of the product.

[0092] In some embodiments, materials of the first barrier sublayer and the second barrier sublayer may each include titanium nitride (TiN).

[0093] It should be noted that, during the deposition of metal tungsten, some reactants may corrode the substrate, and the formation of the first barrier sublayer and the second barrier sublayer can prevent the reactants from corroding the substrate during the deposition process. In addition, the formation of the first barrier sublayer and the second barrier sublayer can also increase the adhesion between the metal material layer formed in the subsequent process and the substrate, thereby reducing the probability of the metal material peeling off from the substrate surface.

[0094] Here, by controlling the reaction parameters for forming the first blocking sublayer and the second blocking sublayer, the first blocking sublayer and the second blocking sublayer with different crystal orientations can be realized. For example, the ratio between the reactants for forming the first blocking sublayer and the second blocking sublayer can be controlled to be different, thereby forming the first blocking sublayer and the second blocking sublayer with different crystal orientations.

[0095] In a specific example, the first blocking sublayer and the second blocking sublayer are formed using a process including but not limited to a CVD process.

[0096] In the embodiment of the present disclosure, step S502 includes: reacting the sidewall and bottom of the trench 102 and the surface of the substrate 100 with the first reactant and the second reactant to form a first blocking sublayer 106;

[0097] Step S503 includes: using the first reactant and the second reactant to react on the sidewall and bottom of the trench 102 and the first blocking sublayer 106 on the surface of the substrate 100 to form a second blocking sublayer 108;

[0098] The ratio between the first reactant and the second reactant in the process of forming the first blocking sublayer 106 is different from the ratio between the first reactant and the second reactant in the process of forming the second blocking sublayer 108 .

[0099] Here, the first barrier sublayer and the second barrier sublayer with different crystal orientations can be formed by controlling the ratio between the first reactant and the second reactant; by utilizing the different characteristics of barrier materials with different crystal orientations, the step coverage of the first barrier sublayer with the first crystal orientation ratio greater than the first preset value is good, and the second barrier sublayer with the second crystal orientation ratio greater than the second preset value is more conducive to the formation of a metal nucleation layer in the subsequent process. Therefore, by controlling the crystal structure of the first barrier sublayer and the second barrier sublayer, the step coverage of the barrier layer is improved and the filling capacity of the deposited metal tungsten in the subsequent process is improved.

[0100] In the embodiment of the present disclosure, the first crystal orientation is a (200) crystal orientation, and the second crystal orientation is a (111) crystal orientation.

[0101] refer to Fig. 7A , Fig. 7A A flowchart of forming a first blocking sublayer provided in an embodiment of the present disclosure. Fig. 7A As shown, in the embodiment of the present disclosure, the material of the first blocking sublayer includes titanium nitride; step S502 includes:

[0102] A carrier gas (e.g., nitrogen) having a gas flow rate N1 carrying a first reactant ammonia having a first gas flow rate F1 and a carrier gas having a gas flow rate M1 carrying a second reactant titanium tetrachloride having a second gas flow rate E1 are reacted on the sidewalls and bottom of the groove and on the surface of the substrate to form a first blocking sublayer; wherein the ratio between the first gas flow rate F1 and the second gas flow rate E1 is less than 30.

[0103] Exemplarily, the process of forming the first blocking sublayer may include the following steps: introducing nitrogen with a gas flow rate M1 to carry titanium tetrachloride of the second gas flow rate E1; using nitrogen to blow out the remaining gas; introducing nitrogen with a gas flow rate N1 to carry ammonia of the first gas flow rate F1; using nitrogen to blow out the remaining gas again; allowing titanium tetrachloride and ammonia to react to form the first blocking sublayer.

[0104] Here, by controlling the ratio between the first gas flow rate F1 and the second gas flow rate E1 to be less than 30, a first blocking sublayer can be formed in which the proportion of the first crystal orientation (200) in all crystal orientations is greater than a first preset value.

[0105] In some embodiments, the carrier gas may include an inert gas. For example, the carrier gas may include, but is not limited to, nitrogen.

[0106] refer to Figure 7B , Figure 7B A flowchart of forming a second blocking sublayer provided in an embodiment of the present disclosure. Figure 7B As shown, in the embodiment of the present disclosure, the material of the second blocking sublayer includes TiN; step S503 includes:

[0107] A carrier gas (e.g., nitrogen) with a gas flow rate N2 carrying ammonia with a third gas flow rate F2 and a carrier gas with a gas flow rate M2 carrying titanium tetrachloride with a fourth gas flow rate E2 are reacted on the sidewalls and bottom of the groove and the first blocking sublayer on the surface of the substrate to form a second blocking sublayer; wherein the ratio between the third gas flow rate F2 and the fourth gas flow rate E2 is greater than 30.

[0108] Exemplarily, the process of forming the second blocking sublayer may include the following steps: introducing nitrogen with a gas flow rate M2 to carry titanium tetrachloride with a fourth gas flow rate E2; using nitrogen to blow out the remaining gas; introducing nitrogen with a gas flow rate N2 to carry ammonia with a third gas flow rate F2; using nitrogen to blow out the remaining gas again; allowing titanium tetrachloride and ammonia to react to form a second blocking sublayer.

[0109] Here, by controlling the ratio between the third gas flow rate F2 and the fourth gas flow rate E2 to be greater than 30, a second blocking sublayer can be formed in which the proportion of the second crystal orientation (111) in all crystal orientations is greater than a second preset value.

[0110] It should be noted that titanium nitride includes (111) crystal orientation, (200) crystal orientation, (220) crystal orientation and (222) crystal orientation. The first barrier sublayer may include the above four crystal orientations; or, may include the (200) crystal orientation and any other two crystal orientations; or, may include the (200) crystal orientation and any other crystal orientation; or, may include the (200) crystal orientation. The second barrier sublayer may include the above four crystal orientations; or, may include the (111) crystal orientation and any other two crystal orientations; or, may include the (111) crystal orientation and any other crystal orientation; or, may include the (111) crystal orientation.

[0111] In some embodiments, the first blocking sublayer may include a (200) crystal orientation and at least one of a (111) crystal orientation, a (220) crystal orientation, and a (222) crystal orientation, and the proportion of the (200) crystal orientation in all crystal orientations is greater than a first preset value. In other embodiments, the first blocking sublayer may include only the (200) crystal orientation, so that the proportion of the (200) crystal orientation in the first blocking sublayer is 100%. In the embodiments of the present disclosure, the first blocking sublayer includes the (200) crystal orientation, and there is no special limitation on whether the first blocking sublayer includes other crystal orientations.

[0112] In some embodiments, the second blocking sublayer may include a (111) crystal orientation and at least one of a (200) crystal orientation, a (220) crystal orientation, and a (222) crystal orientation, and the proportion of the (111) crystal orientation in all crystal orientations is greater than a second preset value. In other embodiments, the second blocking sublayer may include only a (111) crystal orientation, so that the proportion of the (111) crystal orientation in the second blocking sublayer is 100%. In the embodiments of the present disclosure, the second blocking sublayer includes a (111) crystal orientation, and there is no special limitation on whether the second blocking sublayer includes other crystal orientations.

[0113] In the embodiment of the present disclosure, forming the first blocking sublayer has a first reaction time, forming the second blocking sublayer has a second reaction time, and the ratio between the first reaction time and the second reaction time is greater than 10.

[0114] Here, the process of forming the first barrier sublayer is called an X cycle, and the process of forming the second barrier sublayer is called a Y cycle, and the ratio between the duration of the X cycle and the duration of the Y cycle is greater than 10. Of course, the reaction duration can characterize the thickness of the first barrier sublayer and the second barrier sublayer to a certain extent, and the first barrier sublayer in the barrier layer serves as a main layer.

[0115] In the embodiment of the present disclosure, the first blocking sublayer and the second blocking sublayer together form a blocking layer, and the thickness of the blocking layer is 2 nm to 20 nm.

[0116] Here, the thickness of the barrier layer refers to the sum of the thicknesses of the first barrier sublayer and the second barrier sublayer. For the barrier layer covering the bottom of the groove and the surface of the substrate, the thickness of the barrier layer refers to the size of the barrier layer along the thickness direction of the substrate; for the barrier layer covering the sidewall of the groove, the thickness of the barrier layer refers to the size of the barrier layer along the direction perpendicular to the thickness of the substrate.

[0117] refer to Figure 8 , Figure 8 This is the X-ray diffraction pattern of titanium nitride formed under different ammonia gas flow rates. Figure 8 The X-ray diffraction pattern is shown with the horizontal axis being 2θ in degrees (°) and the vertical axis being intensity. Figure 8 The X-ray diffraction curves of titanium nitride formed under four different ammonia gas flow rates are shown, wherein ammonia flow rate G1 < ammonia flow rate G2 < ammonia flow rate G3 < ammonia flow rate G4. In the case of ammonia flow rate G1, titanium nitride with a (200) crystal orientation is more likely to be formed; in the case of ammonia flow rate G4, titanium nitride with a (111) crystal orientation is more likely to be formed. In other words, the higher the ammonia flow rate, the easier it is to form titanium nitride with a (111) crystal orientation; and the higher the titanium tetrachloride flow rate, the easier it is to form titanium nitride with a (200) crystal orientation.

[0118] Here, in the process of forming the first blocking sublayer, the ratio between the ammonia flow rate and the titanium tetrachloride flow rate is less than 30, and the proportion of the (200) crystal orientation of the first blocking sublayer in all crystal orientations is greater than a first preset value; in the process of forming the second blocking sublayer, the ratio between the ammonia flow rate and the titanium tetrachloride flow rate is greater than 30, and the proportion of the (111) crystal orientation of the second blocking sublayer in all crystal orientations is greater than a second preset value.

[0119] refer to Fig. 9 , Fig. 9 X-ray diffraction patterns of titanium nitride in different crystal orientations. Fig. 9 Figure (a) shows the (200) crystal orientation of titanium nitride; Fig. 9 Figure (b) shows the (111) crystal orientation of titanium nitride.

[0120] refer to Fig.10 , Fig.10 Electron microscope photos of titanium nitride with different crystal orientations. Fig.10 Figure (a) shows Fig. 9 The electron microscope photo of the (200) crystal orientation of titanium nitride in (a) is shown in the figure. Fig.10 Figure (b) shows Fig. 9 The electron microscope photo of the (111) crystal orientation of titanium nitride in (b) is shown in Figure 1. Fig.10 As shown in Figure (a), the step coverage of titanium nitride with (200) crystal orientation is good, which is beneficial to improve the filling ability of deposited metal tungsten in subsequent processes, avoid holes or seams in the metal material layer in the trench, and thus improve the electrical performance of the semiconductor structure and the yield of the product. Fig.10 As shown in Figure (b), the step coverage of titanium nitride with a (111) crystal orientation is poor. Directly forming titanium nitride with a (111) crystal orientation on the sidewall and bottom of the trench and on the substrate surface is not conducive to the deposition of metal tungsten in subsequent processes.

[0121] refer to Fig.11 , Fig.11 This is a graph showing the relationship between the step coverage of titanium nitride and the gas flow rate of titanium tetrachloride. Fig.11 The horizontal axis is the gas flow rate of titanium tetrachloride, in standard cubic centimeter per minute (sccm); the vertical axis is the step coverage of titanium nitride. Fig.11 It is shown that as the gas flow rate of titanium tetrachloride increases, the step coverage of titanium nitride also increases.

[0122] In the embodiment of the present disclosure, by utilizing the different properties of titanium nitride with different crystal orientations, titanium nitride with a (200) crystal orientation ratio greater than a first preset value is first formed on the sidewalls and bottom of the trench and the surface of the substrate, and the step coverage of the titanium nitride with the (200) crystal orientation is better (e.g. Fig.10As shown in Figure (a)); then forming titanium nitride with a (111) crystal orientation ratio greater than a second preset value, the (111) crystal orientation titanium nitride is more conducive to nucleation, thereby facilitating the formation of a metal nucleation layer, thereby avoiding the appearance of holes or seams in the metal material layer.

[0123] In the embodiment of the present disclosure, after step S503, the manufacturing method further includes:

[0124] A metal material layer 110 is formed on the sidewalls and the bottom of the trench 102 and the second barrier sublayer 108 on the surface of the substrate 100 .

[0125] refer to Fig.12 , Fig.12 The cross-sectional structure diagram of the process of forming the metal material layer provided by the embodiment of the present disclosure is as follows. Fig.12 As shown in FIG. (a), an active atomic layer 112 is formed on the second blocking sublayer 108 using a third reactant. The third reactant may include but is not limited to diborane, and the substrate is soaked with diborane so that diborane decomposes on the substrate surface, more specifically, on the surface of the second blocking sublayer, and the formed boron atoms can stay on the surface of the second blocking sublayer as much as possible to form an active boron atomic layer.

[0126] refer to Fig.13A and Fig. 13B , Fig.13A Schematic diagram of the decomposition of diborane on the surface of titanium nitride with (111) crystal orientation. Fig. 13B is the activation energy (E) for the decomposition of diborane on the surface of titanium nitride with (111) crystal orientation. a ) and reaction energy (E rxn ). The process of decomposing diborane on the surface of titanium nitride with (111) crystal orientation may include the following steps: in step S1, decomposing BB chemical bonds and BH chemical bonds, the activation energy of the decomposition reaction is 0.39 eV, and the reaction energy is -7.14 eV (that is, the decomposition reaction releases energy); in step S2, decomposing BH chemical bonds, the reaction energy is -9.13 eV; in step S3, decomposing BH chemical bonds, the activation energy of the decomposition reaction is 0.14 eV, and the reaction energy is -2.70 eV.

[0127] refer to Fig. 13C and Fig.13D , Fig. 13C Schematic diagram of the decomposition of diborane on the surface of titanium nitride in other crystal orientations. Fig.13D is the activation energy of diborane decomposition on the surface of titanium nitride in other crystal orientations (E a ) and reaction energy (E rxn). The process of decomposing diborane on the surface of titanium nitride in other crystal orientations may include the following steps: in step S1, decomposing the BB chemical bond, the activation energy of the decomposition reaction is 1.11 eV, and the reaction energy is -1.89 eV (i.e., the decomposition reaction releases energy); in step S2, decomposing the BH chemical bond, the activation energy of the decomposition reaction is 1.65 eV, and the reaction energy is 1.29 eV (i.e., the decomposition reaction absorbs energy); in step S3, decomposing the BH chemical bond, the activation energy of the decomposition reaction is 1.75 eV, and the reaction energy is 1.45 eV; in step S4, decomposing the BH chemical bond, the activation energy of the decomposition reaction is 1.83 eV, and the reaction energy is 1.51 eV.

[0128] Combination FIG. 13A to FIG. 13D The activation energy for the decomposition of diborane on the titanium nitride surface with (111) crystal orientation is lower, the thermodynamic reaction proceeds spontaneously, and diborane is easier to decompose.

[0129] In some embodiments, the thickness of the active atomic layer is 0.1 nm to 5 nm.

[0130] like Fig.12 As shown in FIG. (b), a fourth reactant is reacted with the active atomic layer 112 to form a metal nucleation layer 114 on the second blocking sublayer 108. The fourth reactant may include, but is not limited to, tungsten hexafluoride. During the reaction between tungsten hexafluoride and boron atoms, tungsten in tungsten hexafluoride is replaced by boron atoms to form a tungsten nucleation layer on the surface of the second blocking sublayer.

[0131] In some embodiments, the metal nucleation layer has a thickness of 2 nm to 10 nm.

[0132] refer to Fig.14 , Fig.14 The schematic diagram of the principle of forming a metal nucleation layer provided in the embodiment of the present disclosure. Fig.14 As shown in Figure (a), the substrate is soaked with diborane, and diborane can decompose on the second barrier sublayer surface of the trench sidewall and bottom and the substrate surface to form a boron atomic layer; Fig.14 As shown in Figures (b) and (c), tungsten hexafluoride can react with the boron atomic layer to form a tungsten nucleation layer.

[0133] In the embodiment of the present disclosure, diborane is more easily decomposed into active boron atoms on the surface of the second blocking sublayer whose (111) crystal orientation accounts for a greater proportion than the second preset value to form a boron atom layer; thus, the more boron atoms there are on the surface of the second blocking sublayer whose (111) crystal orientation accounts for a greater proportion than the second preset value, the easier it is to react with tungsten hexafluoride to form a tungsten nucleation layer with a better step coverage, thereby making it easier to form a tungsten body layer, thereby improving the step coverage of the metal material layer, reducing the probability of holes or seams appearing in the metal material layer in the groove, thereby improving the electrical performance of the semiconductor structure, and thereby improving the yield of the product. In addition, diborane can be more quickly decomposed into active boron atoms on the surface of the second blocking sublayer whose (111) crystal orientation accounts for a greater proportion than the second preset value, thereby saving time for wetting the substrate.

[0134] like Fig.12 As shown in FIG. 5( c ), the fourth reactant and the fifth reactant react to form a metal body layer 116 on the metal nucleation layer 114. The fifth reactant may include but is not limited to hydrogen, and hydrogen and tungsten hexafluoride react to form a tungsten body layer on the basis of the tungsten nucleation layer.

[0135] In some embodiments, the metal bulk layer has a thickness of 20 nm to 100 nm.

[0136] It should be noted that the infiltration of the substrate with diborane can form an active atomic layer on the surface of the second barrier sublayer; after tungsten hexafluoride reacts with the active atomic layer, a tungsten nucleation layer is formed on the surface of the second barrier sublayer. At this time, the active atomic layer has participated in the chemical reaction and forms a tungsten nucleation layer after reacting with tungsten hexafluoride. In other words, a tungsten nucleation layer is formed on the surface of the second barrier sublayer, and there is no separate active atomic layer on the surface of the second barrier sublayer. Further, hydrogen and tungsten hexafluoride react to form a tungsten body layer on the basis of the tungsten nucleation layer. There is no clear dividing line between the tungsten nucleation layer and the tungsten body layer, and there is no essential difference between the tungsten nucleation layer and the tungsten body layer.

[0137] For ease of explanation, Fig.12 The active atomic layer 112, the metal nucleation layer 114 and the metal body layer 116 are schematically shown, and different layer structures are distinguished by different filling patterns. In fact, the active atomic layer reacts with tungsten hexafluoride, and the active atomic layer has participated in the chemical reaction. There is no separate active atomic layer on the surface of the second barrier layer; and the metal nucleation layer and the metal body layer together form a metal material layer, and there is no clear dividing line. In other words, in the semiconductor structure finally formed, a metal material layer is formed on the sidewall and bottom of the trench and on the barrier layer on the surface of the substrate, and there is no stratification of the active atomic layer, the metal nucleation layer and the metal body layer inside the metal material layer.

[0138] In the embodiment of the present disclosure, by controlling the crystal structure of the first blocking sublayer and the second blocking sublayer, the nucleation of the metal nucleation layer is promoted, the hole filling ability of the deposition process is improved, and the probability of holes or seams appearing in the metal material layer in the groove is reduced.

[0139] refer to Fig.15 , Fig.15 A schematic diagram of the cross-sectional structure of a semiconductor structure provided in an embodiment of the present disclosure.

[0140] like Fig.15 As shown, an embodiment of the present disclosure provides a semiconductor structure, which includes:

[0141] A substrate 100 having at least one trench 102 formed therein;

[0142] A first blocking sublayer 106 covers the sidewalls and bottom of the trench 102 and the surface of the substrate 100; the first blocking sublayer 106 includes a blocking material in which the proportion of the first crystal orientation in all crystal orientations is greater than a first preset value;

[0143] A second blocking sublayer 108, covering the sidewall and bottom of the trench 102 and the first blocking sublayer 106 on the surface of the substrate 100; the second blocking sublayer 108 comprises a blocking material whose proportion of the second crystal orientation in all crystal orientations is greater than a second preset value; wherein the first crystal orientation and the second crystal orientation are different;

[0144] The metal material layer 110 covers the second blocking sub-layer 108 and fills the trench 102 .

[0145] In the embodiment of the present disclosure, the sidewalls and bottom of the groove and the surface of the substrate are covered with a first blocking sublayer, the first blocking sublayer includes a blocking material whose proportion of the first crystal orientation in all crystal orientations is greater than a first preset value, and the step coverage rate of the first blocking sublayer in the first crystal orientation is good; the first blocking sublayer on the sidewalls and bottom of the groove and the surface of the substrate is covered with a second blocking sublayer, the second blocking sublayer includes a blocking material whose proportion of the second crystal orientation in all crystal orientations is greater than a second preset value, and the second blocking sublayer in the second crystal orientation is more conducive to the formation of a metal nucleation layer in a subsequent process; in this way, the different characteristics of the first crystal orientation and the second crystal orientation of the blocking material are utilized to reduce the probability of holes or seams appearing in the metal material layer in the groove, thereby improving the electrical performance of the semiconductor structure and further improving the yield of the product.

[0146] In the embodiment of the present disclosure, the first blocking sublayer 106 and the second blocking sublayer 108 together form a blocking layer 104 , and the thickness of the blocking layer 104 is 2 nm to 20 nm.

[0147] Here, the first blocking sublayer 106 and the second blocking sublayer 108 may collectively form the blocking layer 104 .

[0148] In the embodiment of the present disclosure, the materials of the first barrier sublayer and the second barrier sublayer both include TiN; the first crystal orientation is (200) and the second crystal orientation is (111).

[0149] In the embodiment of the present disclosure, the material of the metal material layer 110 includes tungsten.

[0150] The disclosed embodiment provides a semiconductor structure and a method for manufacturing the same. In the disclosed embodiment, a first blocking sublayer whose first crystal orientation accounts for a larger proportion than a first preset value is first formed on the sidewall and bottom of the groove and the surface of the substrate, and then a second blocking sublayer whose second crystal orientation accounts for a larger proportion than a second preset value is formed. By utilizing the good step coverage of the first blocking sublayer of the first crystal orientation and the characteristic that the second blocking sublayer of the second crystal orientation is more conducive to forming a metal nucleation layer in a subsequent process, the first blocking sublayer and the second blocking sublayer of different crystal orientations are formed to reduce the probability of holes or seams appearing in the filling material in the groove, thereby improving the electrical performance of the semiconductor structure and further improving the yield of the product.

[0151] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the serial number of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure. The serial numbers of the embodiments of the present disclosure are for description only and do not represent the advantages and disadvantages of the embodiments.

[0152] The above description is only a preferred embodiment of the present disclosure, and does not limit the patent scope of the present disclosure. All equivalent structural changes made by using the contents of the present disclosure and the drawings under the inventive concept of the present disclosure, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present disclosure.

Claims

1. A method for manufacturing a semiconductor structure, characterized in that: The manufacturing method comprises: providing a substrate having at least one trench formed therein; forming a first blocking sublayer on the sidewall and bottom of the trench and on the surface of the substrate; the first blocking sublayer comprises a blocking material in which the proportion of the first crystal orientation in all crystal orientations is greater than a first preset value; A second blocking sublayer is formed on the sidewalls and bottom of the groove and the first blocking sublayer on the surface of the substrate; the second blocking sublayer includes a blocking material in which the proportion of the second crystal orientation in all crystal orientations is greater than a second preset value; wherein the first crystal orientation and the second crystal orientation are different.

2. The method for manufacturing a semiconductor structure according to claim 1, characterized in that: The forming of a first blocking sublayer on the sidewall and bottom of the trench and on the surface of the substrate comprises: Reacting the sidewall and bottom of the trench and the surface of the substrate with a first reactant and a second reactant to form a first blocking sublayer; The forming of a second blocking sublayer on the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate comprises: Using a first reactant and a second reactant to react on the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate to form a second blocking sublayer; The ratio between the first reactant and the second reactant in forming the first blocking sublayer is different from the ratio between the first reactant and the second reactant in forming the second blocking sublayer.

3. The method for manufacturing a semiconductor structure according to claim 2, characterized in that: The material of the first blocking sublayer includes titanium nitride TiN; the forming of the first blocking sublayer on the sidewall and bottom of the trench and on the surface of the substrate includes: A first reactant ammonia NH3 having a first gas flow rate and a second reactant titanium tetrachloride TiCl4 having a second gas flow rate are reacted on the sidewalls and bottom of the groove and on the surface of the substrate to form a first blocking sublayer; wherein the ratio between the first gas flow rate and the second gas flow rate is less than 30.

4. The method for manufacturing a semiconductor structure according to claim 3, characterized in that: The material of the second blocking sublayer includes TiN; and forming the second blocking sublayer on the sidewall and the bottom of the trench and the first blocking sublayer on the surface of the substrate includes: A first reactant NH3 having a third gas flow rate and a second reactant TiCl4 having a fourth gas flow rate are reacted on the sidewalls and bottom of the groove and the first blocking sublayer on the surface of the substrate to form a second blocking sublayer; wherein the ratio between the third gas flow rate and the fourth gas flow rate is greater than 30.

5. The method for manufacturing a semiconductor structure according to claim 4, characterized in that: The first barrier sublayer is formed with a first reaction time, the second barrier sublayer is formed with a second reaction time, and a ratio between the first reaction time and the second reaction time is greater than 10.

6. The method for manufacturing a semiconductor structure according to claim 4, characterized in that: The first blocking sublayer and the second blocking sublayer jointly form a blocking layer, and the thickness of the blocking layer is 2 nm to 20 nm.

7. The method for manufacturing a semiconductor structure according to claim 4, characterized in that: The first crystal orientation is a (200) crystal orientation, and the second crystal orientation is a (111) crystal orientation.

8. The method for manufacturing a semiconductor structure according to claim 1, wherein: After forming the second blocking sublayer on the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate, the manufacturing method further comprises: A metal material layer is formed on the sidewall and bottom of the trench and the second barrier sublayer on the surface of the substrate.

9. The method for manufacturing a semiconductor structure according to claim 8, characterized in that: The step of forming a metal material layer on the sidewall and bottom of the trench and the second barrier sublayer on the surface of the substrate comprises: forming an active atomic layer on the second blocking sublayer using a third reactant; Using a fourth reactant to react with the active atomic layer to form a metal nucleation layer on the second barrier sublayer; The fourth reactant and the fifth reactant are reacted to form a metal body layer on the metal nucleation layer.

10. The method for manufacturing a semiconductor structure according to claim 9, characterized in that: The third reactant includes diborane B2H6, and the active atomic layer includes a boron atomic layer; and / or, The fourth reactant includes tungsten hexafluoride WF6; and / or, The fifth reactant includes hydrogen H2.

11. A semiconductor structure, characterized in that: The semiconductor structure comprises: a substrate having at least one trench formed therein; A first blocking sublayer covers the sidewalls and bottom of the trench and the surface of the substrate; the first blocking sublayer comprises a blocking material in which the proportion of the first crystal orientation in all crystal orientations is greater than a first preset value; A second blocking sublayer, covering the sidewall and bottom of the trench and the first blocking sublayer on the surface of the substrate; the second blocking sublayer comprises a blocking material whose proportion of the second crystal orientation in all crystal orientations is greater than a second preset value; wherein the first crystal orientation and the second crystal orientation are different; A metal material layer covers the second blocking sublayer and fills the trench.

12. The semiconductor structure according to claim 11, characterized in that: The first blocking sublayer and the second blocking sublayer jointly form a blocking layer, and the thickness of the blocking layer is 2 nm to 20 nm.

13. The semiconductor structure according to claim 12, characterized in that: The materials of the first barrier sublayer and the second barrier sublayer both include TiN; the first crystal orientation is (200) and the second crystal orientation is (111).

14. The semiconductor structure according to claim 11, characterized in that: The material of the metal material layer includes tungsten W.

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