Heat dissipation structure and cooking device

Abstract

The invention discloses a heat dissipation structure and a cooking device, belongs to the technical field of kitchen appliances, and aims to solve the problem that an existing semiconductor microwave solid state source is poor in heat dissipation effect. The heat dissipation structure comprises a heat dissipation pipe, the heat dissipation pipe is filled with a phase change medium, and when the temperature is higher than a set value, the phase change medium can absorb heat of the semiconductor microwave solid-state source through phase change; when the temperature is lower than a set value, the phase change medium can release heat through phase change; a heat dissipation fan; and the heat dissipation fan drives air in the heat dissipation air duct to flow to the heat dissipation pipe for heat exchange. According to the heat dissipation structure and the cooking device, the heat dissipation pipe of the heat dissipation structure is filled with the phase change medium, the phase change medium can absorb heat, and it is ensured that the semiconductor microwave solid-state source can continuously work in a proper temperature environment; on the premise that the size of the heat dissipation structure is not increased, heat dissipation is carried out through the phase change heat absorption principle, and the effective heat dissipation requirement of a single solid-state source with the power exceeding 300 W or double sources with the power exceeding 600 W is met.

Description

Technical Field

[0001] The present invention relates to the technical field of kitchen appliances, and in particular to a heat dissipation structure and a cooking device. Background Art

[0002] Cooking devices such as microwave ovens require a heat source that can create a high temperature environment in the cooking chamber to cook food.

[0003] At present, some cooking devices are equipped with 915MHz semiconductor microwave solid-state sources, which use their strong penetrating power as the heat source of the cooking device to heat the food more evenly during cooking. While sending heat to the cooking chamber, the semiconductor microwave solid-state source also generates heat itself. In order to prevent the working state of the semiconductor microwave solid-state source from declining, it is necessary to dissipate heat and cool the semiconductor microwave solid-state source.

[0004] The existing semiconductor microwave solid-state source heat dissipation and cooling technology has the following defects: the internal structure of cooking devices such as microwave ovens is relatively compact, and it is impossible to install a large heat dissipation device for the semiconductor microwave solid-state source, resulting in poor heat dissipation effect. After the semiconductor microwave solid-state source has worked for a period of time, the temperature is too high, resulting in poor working condition, and the cooking efficiency of the cooking device is low. Summary of the invention

[0005] The purpose of the present invention is to provide a heat dissipation structure and a cooking device, which solves the problem of poor heat dissipation effect of the existing semiconductor microwave solid-state source and has high cooking efficiency.

[0006] To achieve this object, on the one hand, the present invention adopts the following technical solutions:

[0007] The heat dissipation structure comprises a heat dissipation pipe, one end of which is in contact with a semiconductor microwave solid-state source, the heat dissipation pipe is filled with a phase change medium, when the temperature is higher than a set value, the phase change medium can absorb the heat of the semiconductor microwave solid-state source through phase change; when the temperature is lower than the set value, the phase change medium can release the heat through phase change; a heat dissipation fan; and a heat dissipation duct, the heat dissipation pipe is at least partially located in the heat dissipation duct, and the portion of the heat dissipation pipe located in the heat dissipation duct is higher than the end of the heat dissipation pipe in contact with the semiconductor microwave solid-state source, the heat dissipation fan drives the air in the heat dissipation duct to flow to the heat dissipation pipe and performs heat exchange with the heat dissipation pipe, and there is an angle between the airflow direction and the extension direction of the heat dissipation pipe.

[0008] In one of the preferred embodiments, a linear inner groove is provided on the inner wall surface of the heat dissipation tube; and / or the inner groove extends from one end of the heat dissipation tube to the other end; and / or the extension direction of the inner groove is consistent with the extension direction of the heat dissipation tube; and / or at least twenty inner grooves are provided at intervals on the inner wall surface of the heat dissipation tube.

[0009] In one of the preferred embodiments, the inner groove forms a liquid channel, and the cross-sectional area of ​​the inner groove along the direction perpendicular to the extension of the heat dissipation pipe is 0.1 square millimeter ± 0.01 square millimeter; and / or, the inner groove forms a liquid channel, and the width L and height H of the inner groove are both 0.3 mm ± 0.03 mm; and / or, the inside of the heat dissipation pipe except the inner groove forms a gas channel, and along the direction perpendicular to the axis of the heat dissipation pipe, the ratio of the cross-sectional area of ​​the inner groove to the cross-sectional area of ​​the gas channel is 0.1-0.5:1.

[0010] In one preferred embodiment, the interior of the heat dissipation pipe is in a vacuum state and / or the phase change medium is water.

[0011] In one of the preferred embodiments, the heat dissipation structure further includes fins, all of the fins are arranged at intervals along the extension direction of the heat dissipation tube, and the heat dissipation tube is inserted into the openings of the fins.

[0012] In one of the preferred embodiments, along the extension direction of the heat dissipation tube, a protrusion, a recess, and an inclined surface connected between the protrusion and the recess are formed on the fin.

[0013] In one preferred embodiment, an angle α between the protrusion and the inclined surface is in a range of 130° to 170°.

[0014] In one of the preferred embodiments, a flange is formed at the opening of the fin, and the flange is attached to the outer wall surface of the heat dissipation tube.

[0015] In one preferred embodiment, the height X2 of the flange is equal to the distance X1 between two adjacent fins, and the flange directions of all the fins are consistent.

[0016] On the other hand, the present invention adopts the following technical solutions:

[0017] The cooking device comprises a semiconductor microwave solid-state source for providing heat for cooking. The cooking device also comprises the above-mentioned heat dissipation structure. The heat dissipation pipe can exchange heat with the semiconductor microwave solid-state source.

[0018] The heat dissipation structure provided by the present invention has a heat dissipation pipe filled with a phase change medium, which can absorb heat to ensure that the semiconductor microwave solid-state source can continue to work in a suitable temperature environment; without increasing the volume of the heat dissipation structure, heat is dissipated through the phase change heat absorption principle, meeting the effective heat dissipation requirements of a single solid-state source with a power exceeding 300W or a dual source with a power exceeding 600W, and the heat dissipation efficiency is high.

[0019] The cooking device provided by the present invention includes the above-mentioned heat dissipation structure, which can perform heat exchange with the semiconductor microwave solid-state source, so that the temperature rise of the semiconductor microwave solid-state source is within the control range, thereby improving the working capacity of the semiconductor microwave solid-state source, extending the service life of the semiconductor microwave solid-state source, and improving the cooking efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic structural diagram of a cooking device provided in a specific embodiment of the present invention;

[0021] Figure 2 It is a schematic diagram of the combined structure of the heat dissipation structure and the semiconductor microwave solid-state source provided in a specific embodiment of the present invention;

[0022] Figure 3 It is a cross-sectional view of the combined structure of the heat dissipation structure and the semiconductor microwave solid-state source provided by a specific embodiment of the present invention;

[0023] Figure 4 is a top view of a heat dissipation structure provided in a specific embodiment of the present invention;

[0024] Figure 5 is a bottom view of a heat dissipation structure provided in a specific embodiment of the present invention;

[0025] Figure 6 is a cross-sectional view of a heat dissipation structure provided in a specific embodiment of the present invention;

[0026] Figure 7 yes Figure 6 A partial enlarged view of the middle A;

[0027] Figure 8 It is a schematic diagram of the combined structure of the heat dissipation pipe and the mounting base provided in a specific embodiment of the present invention;

[0028] Fig. 9 is a cross-sectional view of a combined structure of a heat dissipation pipe and a mounting base provided in a specific embodiment of the present invention along an axial direction;

[0029] Fig.10 It is a radial cross-sectional view of a combined structure of a heat dissipation pipe and a mounting base provided in a specific embodiment of the present invention.

[0030] In the figure:

[0031] 1. Heat dissipation pipe; 2. Fins; 3. Heat dissipation fan; 4. Heat dissipation duct; 5. Semiconductor microwave solid-state source; 6. Heat dissipation base; 7. Bolts; 8. Inner tank; 11. Inner groove; 12. Mounting base; 13. Mounting through hole; 21. Protrusion; 22. Recessed portion; 23. Bevel; 24. Flanged edge. DETAILED DESCRIPTION

[0032] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0033] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0034] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0035] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0037] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0038] This embodiment discloses a heat dissipation structure and a cooking device including the heat dissipation structure, and the cooking device may be, but is not limited to, a microwave oven or a microwave oven. Figure 1 As shown, the cooking device includes a heat dissipation structure, a semiconductor microwave solid-state source 5 and an inner pot 8. A cavity for cooking is formed inside the inner pot 8, and the semiconductor microwave solid-state source 5 can provide heat to the cavity for cooking. The heat dissipation structure and the semiconductor microwave solid-state source 5 are both arranged outside the inner pot 8. The heat dissipation structure is placed close to the heat release part of the semiconductor microwave solid-state source 5 or directly attached to the heat release part of the semiconductor microwave solid-state source 5, and the heat exchange efficiency is high.

[0039] like Figures 2 to 6 As shown, the heat dissipation structure includes a heat dissipation pipe 1, a heat dissipation fan 3 and a heat dissipation air duct 4. The heat dissipation pipe 1 is located in the heat dissipation air duct 4 and on the air outlet side of the heat dissipation fan 3. One end of the heat dissipation pipe 1 can contact with the semiconductor microwave solid-state source 5. When the heat dissipation fan 3 supplies air to the heat dissipation air duct 4, the low-temperature airflow can pass through the heat dissipation pipe 1 and perform heat exchange, thereby improving the heat dissipation capacity of the heat dissipation pipe 1. In this embodiment, the middle and / or lower part of the heat dissipation pipe 1 can contact with the semiconductor microwave solid-state source 5; there is an angle between the airflow direction and the extension direction of the heat dissipation pipe 1, ensuring that the airflow can fully contact the outer surface of the heat dissipation pipe 1, and the heat exchange effect is good.

[0040] The heat dissipation pipe 1 is filled with a phase change medium. When the temperature is higher than the set value, the phase change medium can absorb the heat of the semiconductor microwave solid-state source 5 through phase change; when the temperature is lower than the set value, the phase change medium can release heat through phase change. The phase change medium can be, but is not limited to, water. In this embodiment, the heat dissipation pipe 1 is in a vacuum state, and the boiling point of pure water in the heat dissipation pipe 1 will drop to 35°C. After absorbing heat and rising in temperature, water will transform from liquid to gas, undergoing a phase change, and at the same time, utilizing the principle of latent heat of water vaporization, it will absorb more heat.

[0041] When the semiconductor microwave solid-state source 5 is working, it will generate a lot of heat energy. The heat dissipation pipe 1 can directly or indirectly exchange heat with the semiconductor microwave solid-state source 5, thereby absorbing the heat energy generated by the semiconductor microwave solid-state source 5, ensuring that the semiconductor microwave solid-state source 5 can continue to work in a suitable temperature environment, and the temperature rise of the semiconductor microwave solid-state source 5 is within the control range. Without increasing the volume of the heat dissipation structure, heat is dissipated through the phase change heat absorption principle, meeting the effective heat dissipation requirements of a single solid-state source with a power of more than 300W or a dual source with a power of more than 600W, and the heat dissipation efficiency is high.

[0042] The heat pipe 1 can be made of any material as long as it is easy to process and has high heat exchange efficiency. In this embodiment, the heat pipe 1 is made of copper, sealed and vacuumed after processing, and about 5 ml of pure water is filled in the copper pipe as a phase change medium.

[0043] The heat dissipation tube 1 can be directly placed near the semiconductor microwave solid-state source 5 or in close contact with the semiconductor microwave solid-state source 5, and the heat exchange efficiency is high; a mounting base 12 can also be provided at the bottom of the heat dissipation tube 1, and a mounting through hole 13 is provided on the mounting base 12. The bolt 7 can pass through the mounting through hole 13 to fix the mounting base 12 to the heat dissipation base plate 6. The heat dissipation base plate 6 is placed near the heat release part of the semiconductor microwave solid-state source 5 or in close contact with the heat release part of the semiconductor microwave solid-state source 5. The mounting structure of the heat dissipation tube 1 is more stable, and accidental displacement of the heat dissipation tube 1 can be avoided.

[0044] In order to improve the heat dissipation efficiency, Figure 6 and Figure 7 As shown, the heat dissipation structure also includes fins 2. In order to further improve the heat dissipation efficiency, the heat dissipation structure also includes at least two fins 2. All fins 2 are arranged at equal intervals along the extension direction of the heat dissipation tube 1, and the heat dissipation tube 1 is inserted into the opening (not shown) of the fins 2. After the heat dissipation tube 1 absorbs the heat energy generated by the semiconductor microwave solid-state source 5, the heat is quickly transferred to the fins 2 to prevent heat from accumulating on the heat dissipation tube 1. The fins 2 are in full contact with the surrounding air and can quickly transfer heat to the surrounding air, with a good heat dissipation effect.

[0045] The specific shape of the fin 2 is not limited, as long as it can exchange heat with the surrounding air. In this embodiment, along the extension direction of the heat pipe 1, the fin 2 is formed with a protrusion 21, a recessed portion 22, and an inclined surface 23 connected between the protrusion 21 and the recessed portion 22. That is, the fin 2 is undulating or wavy in the plane, and the area of ​​the fin 2 is increased while the size of the fin 2 remains unchanged, the contact area between the fin 2 and the surrounding air is larger, and the heat dissipation efficiency is higher.

[0046] The specific shapes and sizes of the protrusion 21, the recessed portion 22 and the inclined surface 23 are not limited, as long as the contact area between the fin 2 and the surrounding air can be increased. In the present embodiment, the angle α between the protrusion 21 and the inclined surface 23 is in the range of 130° to 170°, preferably 130°, 135°, 140°, 145°, 150°, 155°, 160°, 165° and 170°, with low processing difficulty, and the contact area between the fin 2 and the surrounding air will not be excessively increased. The noise is low and the energy consumption is low.

[0047] The specific connection method between the fin 2 and the outer wall of the heat pipe 1 is not limited, and can be, but not limited to, welding, riveting, clamping, etc., as long as the fin 2 and the heat pipe 1 are stably connected. On the basis of the above structure, the opening of the fin 2 is bent in a direction perpendicular to the plane where the fin 2 is located to form a flange 24. The flange 24 is attached to the outer wall of the heat pipe 1 to improve the heat transfer efficiency between the fin 2 and the heat pipe 1. The flanges 24 of all fins 2 are in the same direction, which can avoid interference between adjacent fins 2, save space, and have high assembly efficiency.

[0048] The specific height of the flange 24 is not limited, as long as it can be stably connected to the heat pipe 1 and the contact area is large enough and easy to process. In this embodiment, the height X2 of the flange 24 is equal to the installation distance X1 between two adjacent fins 2, which maximizes the contact area between the fin 2 and the heat pipe 1 without affecting the installation of the fin 2, so that the fin 2 wraps the heat pipe 1 as much as possible, with a large heat conduction area and high heat transfer efficiency.

[0049] like Figures 1 to 7 As shown, in order to improve the heat dissipation efficiency, in the present embodiment, the semiconductor microwave solid-state source 5, the mounting base 12 and the fins 2 are also arranged in the heat dissipation duct 4 and are located on the air outlet side of the heat dissipation fan 3. The heat dissipation fan 3 drives the air in the heat dissipation duct 4 to flow to the heat dissipation pipe 1. The low-temperature airflow can perform heat exchange with the heat dissipation pipe 1, the semiconductor microwave solid-state source 5, the mounting base 12 and the fins 2 in the heat dissipation duct 4, thereby improving the heat dissipation capacity of the semiconductor microwave solid-state source 5.

[0050] In order to improve the heat dissipation effect, the extension direction of the fins 2 is parallel to the air outlet direction of the heat dissipation fan 3, that is, the air guide surface between the fins 2 is parallel to the air outlet of the heat dissipation fan 3, and the low-temperature airflow sent into the heat dissipation air duct 4 by the heat dissipation fan 3 can smoothly enter between the fins 2, ensuring that the low-temperature airflow can fully contact the fins 2 to improve the heat exchange efficiency.

[0051] In order to improve the heat dissipation efficiency, the heat dissipation structure includes at least two heat dissipation pipes 1. The heat dissipation pipes 1 are staggered along the flow direction of the low-temperature gas to ensure that the heat dissipation pipes 1 do not block each other and each heat dissipation pipe 1 can exchange heat with the low-temperature gas flow.

[0052] The water in the heat pipe 1 absorbs the heat from the semiconductor microwave solid source 5 to generate steam. The steam has a light specific gravity and will float to the upper part of the heat pipe 1. At least part of the heat pipe 1 is at the cold end of the heat dissipation duct 4, and the part of the heat pipe 1 located in the heat dissipation duct 4 is higher than the end of the heat pipe 1 that contacts the semiconductor microwave solid source 5. After heat exchange with the low-temperature airflow, the steam will release heat and condense to form liquid water, which will flow back to the hot end at the bottom of the heat pipe 1 to achieve circulating heat dissipation.

[0053] In order to improve the water return efficiency, Figures 8 to 10 As shown, an inner groove 11 is provided on the inner wall surface of the heat dissipation tube 1, and the extension direction of the inner groove 11 is the same as the extension direction of the heat dissipation tube 1. The inner groove 11 extends from one end of the heat dissipation tube 1 to the other end, that is, the inner groove 11 runs through the interior of the heat dissipation tube 1.

[0054] The inner groove 11 forms a liquid channel, and the structure of the inner groove 11 has a capillary effect (or called a capillary effect). The inner groove 11 forming a liquid channel can accelerate the flow speed of water in the heat dissipation pipe 1 and improve the heat dissipation effect. In this embodiment, along the direction perpendicular to the extension of the heat dissipation pipe 1, the cross-sectional area of ​​the inner groove 11 is 0.1 square millimeters ± 0.01 square millimeters.

[0055] The heat pipe 1 forms a gas channel except the inner groove 11. In the direction perpendicular to the axis of the heat pipe 1, the ratio of the cross-sectional area of ​​the inner groove 11 to the cross-sectional area of ​​the gas channel is 0.1-0.5: 1. The specific value of the ratio is not limited as long as it can improve the heat dissipation effect.

[0056] Of course, other methods may also be used to characterize the size of the inner groove 11. In this embodiment, the inner groove 11 forms a liquid channel, and the width L and height H of the inner groove 11 are both 0.3 mm ± 0.03 mm.

[0057] On the basis of the above structure, at least twenty inner grooves 11 are arranged at intervals on the inner wall surface of the heat dissipation tube 1, and all the inner grooves 11 are evenly distributed on the inner wall surface of the heat dissipation tube 1, so that the steam can smoothly flow back to the bottom hot end of the heat dissipation tube 1 at any position.

[0058] The width L and height H of the inner groove 11 are both 0.3 mm±0.03 mm, preferably 0.3 mm, which is convenient for processing, has a significant capillary effect, and allows condensed water to flow back along the inner groove 11 more smoothly.

[0059] In order to prevent the condensed water from being retained, the inner groove 11 is in a straight line shape. The inner groove 11 has no bends, and the condensed water flows more smoothly.

[0060] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention is described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A heat dissipation structure, characterized in that: include: A heat dissipation pipe (1), one end of which can be in contact with a semiconductor microwave solid-state source (5), the heat dissipation pipe (1) is filled with a phase change medium, and when the temperature is higher than a set value, the phase change medium can absorb the heat of the semiconductor microwave solid-state source (5) through phase change; when the temperature is lower than the set value, the phase change medium can release the heat through phase change; a cooling fan (3); and A heat dissipation duct (4), wherein the heat dissipation pipe (1) is at least partially located in the heat dissipation duct (4), and the portion of the heat dissipation pipe (1) located in the heat dissipation duct (4) is higher than an end of the heat dissipation pipe (1) in contact with the semiconductor microwave solid-state source (5), and the heat dissipation fan (3) drives the air in the heat dissipation duct (4) to flow to the heat dissipation pipe (1) and performs heat exchange with the heat dissipation pipe (1), and an angle is formed between the airflow direction and the extension direction of the heat dissipation pipe (1).

2. The heat dissipation structure according to claim 1, characterized in that: The inner wall surface of the heat dissipation pipe (1) is provided with a linear inner groove (11); and / or, The inner groove (11) extends from one end of the heat dissipation pipe (1) to the other end; and / or, The extension direction of the inner groove (11) is consistent with the extension direction of the heat dissipation pipe (1); and / or, At least twenty inner grooves (11) are arranged at intervals on the inner wall surface of the heat dissipation pipe (1).

3. The heat dissipation structure according to claim 2, characterized in that: The inner groove (11) forms a liquid channel, and along a direction perpendicular to the extension of the heat dissipation pipe (1), the cross-sectional area of ​​the inner groove (11) is 0.1 square millimeters ± 0.01 square millimeters; and / or, The inner groove (11) forms a liquid channel, and the width L and height H of the inner groove (11) are both 0.3 mm ± 0.03 mm; and / or, The heat dissipation tube (1) has a gas channel formed inside the portion other than the inner groove (11), and along a direction perpendicular to the axis of the heat dissipation tube (1), the ratio of the cross-sectional area of ​​the inner groove (11) to the cross-sectional area of ​​the gas channel is 0.1-0.5:

1.

4. The heat dissipation structure according to claim 1, characterized in that: The interior of the heat dissipation pipe (1) is in a vacuum state and / or the phase change medium is water.

5. The heat dissipation structure according to any one of claims 1 to 4, characterized in that: The heat dissipation structure further comprises fins (2), all of the fins (2) are arranged at intervals along the extension direction of the heat dissipation tube (1), and the heat dissipation tube (1) is inserted into the openings of the fins (2).

6. The heat dissipation structure according to claim 5, characterized in that: Along the extension direction of the heat dissipation pipe (1), a protruding portion (21), a recessed portion (22), and an inclined surface (23) connected between the protruding portion (21) and the recessed portion (22) are formed on the fin (2).

7. The heat dissipation structure according to claim 6, characterized in that: The included angle α between the protruding portion (21) and the inclined surface (23) is in the range of 130° to 170°.

8. The heat dissipation structure according to claim 5, characterized in that: A flange (24) is formed at the opening of the fin (2), and the flange (24) is attached to the outer wall surface of the heat dissipation tube (1).

9. The heat dissipation structure according to claim 8, characterized in that: The height X2 of the flange (24) is equal to the distance X1 between two adjacent fins (2), and the flanges (24) of all the fins (2) are in the same direction.

10. A cooking device comprising a semiconductor microwave solid-state source (5) for providing heat for cooking, characterized in that: The cooking device further comprises a heat dissipation structure as claimed in any one of claims 1 to 9, and the heat dissipation pipe (1) is capable of performing heat exchange with the semiconductor microwave solid-state source (5).

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