Gluing process of high-cleanliness IC chip quartz substrate

Abstract

The invention discloses a gluing process of a high-cleanliness IC chip quartz substrate, and relates to the technical field of photoetching machines. The objective of the invention is to solve the problem that a manner of dropwise adding photoresist may hardly completely avoid generation of bubbles, and especially in a structure with a high aspect ratio, variable-speed rotation contributes to improvement of uniformity of a coating, but may still hardly achieve an ideal gluing effect for some quartz substrates with complex shapes or sizes. The stability of the substrate in the gluing process is ensured through preheating treatment and the vacuum adsorption device, the surface of the substrate is inspected by combining the visual inspection device, the high cleanliness of the substrate is ensured, good initial conditions are provided for the gluing process, accurate control is achieved in the extreme ultraviolet lithography process, the adhesive force of photoresist and the substrate is improved, and the production efficiency is improved. The etching resistance of the photoresist is improved, the quality of the pattern structure on the surface of the developed quartz substrate is ensured through visual inspection and post-baking treatment, and the overall manufacturing quality and efficiency of the IC chip are remarkably improved.

Description

Technical Field

[0001] The invention relates to the technical field of photolithography machines, and in particular to a glue coating process for a quartz substrate of an IC chip with high cleanliness. Background Art

[0002] Traditional glue coating processes often face problems such as bubbles and uneven coating, which affect the accuracy of the photolithography pattern and the overall performance of the chip. For example, the patent application with publication number: CN117369214A discloses a photolithography glue coating process with controllable glue coating thickness for quartz substrate production, including the following steps: S1: pre-treat the quartz substrate and adsorb it onto a vacuum chuck; S2: control the rotation of the quartz substrate, drip photoresist to the center of the quartz substrate, and rotate it in a variable speed manner within a set time period. The quartz substrate is coated with glue twice. In the first coating, the first stage of variable speed glue is used to quickly flatten the photoresist on the quartz substrate, while preventing the appearance of reticulation on the edge of the quartz substrate, ensuring the flatness and uniformity of the first layer of glue film on the quartz substrate, and using an infrared micrometer to detect the thickness of the first layer of glue film.

[0003] However, although the above patent has made certain progress in controlling the thickness and uniformity of the coating, the method of dripping photoresist may be difficult to completely avoid the generation of bubbles, especially in structures with high aspect ratios. At the same time, although variable speed rotation helps to improve the uniformity of the coating, it may still be difficult to achieve an ideal coating effect for quartz substrates of certain complex shapes or sizes. Summary of the invention

[0004] The purpose of the present invention is to provide a high-cleanliness glue coating process for IC chip quartz substrates, which can ensure that no bubbles are generated in the photoresist during the coating process and the coating is uniform, thereby improving the accuracy and clarity of the photolithography pattern. The photoresist has low absorption of extreme ultraviolet light, can reduce energy loss and pattern distortion, meet the needs of large-scale production, and solve the problems raised in the above-mentioned background technology.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A high-cleanliness gluing process for a quartz substrate of an IC chip comprises the following steps:

[0007] Step 1: Substrate pretreatment: Place the quartz substrate in an ultrasonic cleaner, clean it with deionized water and a cleaning agent, blow dry the substrate with nitrogen, and place it in a clean room to stand;

[0008] Step 2: Photoresist coating: Select photoresist suitable for extreme ultraviolet lithography, and use precision coating equipment to evenly coat the photoresist on the quartz substrate;

[0009] Step 3: Photoresist curing: Place the coated quartz substrate in a drying device and dry it according to the preset temperature and time to dry and cure the photoresist, and control the drying temperature and time during the curing process;

[0010] Step 4: EUV lithography: The cured quartz substrate is sent into an EUV lithography machine and exposed using an EUV light source. During the lithography process, the exposure time, light source intensity, and mask alignment accuracy are controlled. After exposure, a developer is used to remove the photoresist in the exposed and unexposed parts to form the desired graphic structure.

[0011] Step 5: Post-processing: The developed quartz substrate is hardened and then subjected to subsequent processes such as etching and ion implantation as required to complete the manufacture of the IC chip.

[0012] Furthermore, the step 1: substrate pretreatment, further comprises:

[0013] Before applying glue, preheat the quartz substrate at 80℃-120℃ and the preset time is 3-5min. Use a vacuum adsorption device to fix the preheated quartz substrate on the glue application table to ensure that the substrate is flat and free of bubbles and the adsorption force is moderate.

[0014] During the fixing process, the surface of the substrate is inspected by a visual inspection device to check whether the edges and corners of the substrate are completely fitted, to ensure that the substrate will not move or deform during glue coating, and to check whether there are defects on the surface of the substrate. If there are defects, the substrate is pre-processed again.

[0015] Furthermore, the visual inspection device inspects the surface of the substrate, and the specific steps are as follows:

[0016] Acquire image data of the quartz substrate based on a visual inspection device, and perform standardization processing on the acquired image data to obtain a standardized image;

[0017] Determine the area with obvious brightness change in the standardized image, identify the edge of the quartz substrate based on edge detection, and determine the appearance image of the quartz substrate;

[0018] Obtaining the feature value of each pixel in the standardized image and constructing a feature matrix in the appearance image of the quartz substrate;

[0019] Among the image data of the quartz substrate acquired at different positions and brightness, one appearance image is extracted as a comparison sample to construct a first matrix;

[0020] Taking feature matrices in other appearance images as second matrices, and respectively calculating similarities between the first matrix and a plurality of second matrices;

[0021] When it is determined that the maximum similarity is greater than the preset threshold, the corresponding quartz substrate appearance image of the second matrix is ​​considered qualified, and is determined as a sample feature of the quartz substrate as a recognition result;

[0022] The acquired quartz substrate sample features are compared with the preset sample features. If the difference between the sample features and the preset features exceeds a preset range, it is determined that there is an abnormality on the surface of the quartz substrate;

[0023] If defects are detected on the substrate surface, a decision is made whether to re-preprocess the substrate based on the type and extent of the defects.

[0024] Furthermore, the step 2: photoresist coating specifically includes:

[0025] Photoresist selection: extract key indicators based on the type of photoresist, including viscosity, curing speed and etching resistance, perform performance evaluation based on the extracted key indicators, and determine the photoresist based on the performance evaluation results;

[0026] Coating control: The coating equipment is selected based on the size and shape of the quartz substrate. The coating equipment evenly and continuously coats the selected photoresist on the quartz substrate. During the coating process, real-time feedback is obtained to dynamically control the coating speed, rotation speed and coating amount.

[0027] Furthermore, the glue coating speed, rotation speed and glue coating amount are dynamically controlled, including:

[0028] When the coating equipment selection result is a spin coater, the spin coater evenly spreads the photoresist on the surface of the quartz substrate at a rotation speed of 500 rpm, and then gradually increases the rotation speed to 2500 rpm for 5-8 seconds;

[0029] Meanwhile, the spin coater sensor monitors the coating status of the photoresist in real time, including thickness, uniformity, and bubble generation;

[0030] If uneven coating and bubble generation are detected, the glue coating speed is immediately adjusted to an accuracy of ±10%, the rotation speed to an accuracy of ±50rpm, and the glue coating amount to an accuracy of ±0.5μL.

[0031] Furthermore, the coating control also includes: after the glue is applied, the quartz substrate is subjected to a static treatment for 5-10 seconds, and at the same time, the temperature of the static environment is maintained within the range of 23±2°C and the relative humidity is maintained within the range of 40±5%.

[0032] Furthermore, the photoresist coating also includes coating quality detection, specifically:

[0033] Thickness measurement: non-contact thickness measurement of the coated photoresist layer is performed based on a measuring instrument to determine whether the thickness of the photoresist layer is within a preset error range;

[0034] Uniformity detection: The flatness of the coated photoresist surface is detected based on optical measuring instruments;

[0035] Adhesion test: The adhesion between the photoresist layer and the quartz substrate is tested, and the adhesion between the photoresist and the quartz substrate is evaluated based on the test results.

[0036] Furthermore, the adhesion between the photoresist layer and the quartz substrate is tested, specifically including:

[0037] Based on a test needle with a smooth and rounded needle, apply pressure perpendicular to the photoresist surface, gradually increase the pressure, make the test needle pass through the photoresist surface to form a scratch, and record the critical pressure value at which the photoresist starts to peel off;

[0038] According to the critical pressure value and the width and depth data of the scratch, the adhesion between the photoresist and the quartz substrate is calculated, and the calculated adhesion is compared with the standard of 0.5N / mm to evaluate whether the adhesion meets the standard;

[0039] At the same time, the test needle pressure data is read from the pressure sensor of the test needle, the test needle pressure data is compared with the preset pressure threshold, whether it is within the preset pressure threshold, and whether there is an abnormality on the photoresist surface is determined based on the comparison result;

[0040] If the test needle pressure data is within the preset pressure threshold and the photoresist begins to peel off at the critical pressure, the adhesion is considered to meet the standard;

[0041] If the photoresist starts to peel off when the test needle pressure data is far below the preset pressure threshold, or the photoresist still does not peel off when the test needle pressure data is far above the preset threshold, it means that the adhesion does not meet the standard;

[0042] Record the test data in detail during the test process, analyze the correlation between the calculated adhesion and the critical pressure value, and compile and generate a test report for the quartz substrate based on the analysis results.

[0043] Further, step three: curing the photoresist, specifically:

[0044] Place the quartz substrate coated with photoresist and passed the test at the feed port of the drying equipment, preheat the drying equipment to 100° C., and feed the quartz substrate into the preheated drying equipment at a constant speed for heating;

[0045] The temperature of the heating zone of the drying equipment is 150°C, and the time for keeping the quartz substrate in the heating zone is within the range of 120s-180s;

[0046] Move the heated and dried quartz substrate to the curing zone, raise the temperature to 200°C, and keep the quartz substrate in the curing zone for 280s-320s;

[0047] After curing is completed, the quartz substrate is slowly moved out of the curing area and into the cooling area, the temperature of the quartz substrate is gradually lowered to room temperature, and a visual inspection is performed to confirm whether the photoresist is uniformly cured.

[0048] Furthermore, the step 5 of performing a hardening treatment on the developed quartz substrate further includes:

[0049] Perform visual inspection on the developed quartz substrate to extract key features of the surface graphic structure of the quartz substrate. Based on the key features of the quartz substrate, determine whether the graphic results meet the requirements. Perform post-baking on the developed quartz substrate that meets the requirements to remove the remaining solvent.

[0050] Compared with the prior art, the present invention has the following beneficial effects:

[0051] By selecting photoresists with low absorption, high transparency and excellent anti-bubble performance, using precision coating equipment, and dynamically controlling the coating speed and rotation speed, the generation of bubbles in high aspect ratio structures is effectively reduced, and the uniformity and quality of the coating are improved. At the same time, the stability of the substrate during the coating process is ensured by preheating treatment and vacuum adsorption devices. The surface of the substrate is inspected in combination with a visual inspection device to ensure the high cleanliness of the substrate, providing good starting conditions for the coating process. Furthermore, by precisely controlling the exposure time, light source intensity and mask alignment accuracy during the extreme ultraviolet lithography process, as well as the temperature and time control in the curing step, the adhesion between the photoresist and the substrate is improved, and the etching resistance of the photoresist is improved. Finally, through visual inspection and post-baking treatment, the quality of the graphic structure on the surface of the quartz substrate after development is ensured, providing a good foundation for subsequent processes such as etching and ion implantation, thereby significantly improving the overall manufacturing quality and efficiency of IC chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 The present invention is a flow chart of the gluing process of the IC chip quartz substrate. DETAILED DESCRIPTION

[0053] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0054] In order to solve the technical problem that it may be difficult to completely avoid the generation of bubbles by dripping photoresist, especially in structures with high aspect ratios, and that variable speed rotation can help improve the uniformity of the coating, it may still be difficult to achieve the ideal coating effect for some quartz substrates with complex shapes or sizes, please refer to Figure 1 , this embodiment provides the following technical solutions:

[0055] A high-cleanliness gluing process for a quartz substrate of an IC chip comprises the following steps:

[0056] Step 1: Substrate pretreatment: Place the quartz substrate in an ultrasonic cleaner and clean it with deionized water and detergent to remove dust, grease and other contaminants on the surface. Use nitrogen to blow dry the substrate and place it in a clean room to avoid re-contamination.

[0057] Step 2: Photoresist coating: Select a photoresist with low absorption, high transparency and excellent anti-bubble performance suitable for extreme ultraviolet lithography, and use precision coating equipment such as a spin coater or spray coater to evenly coat the photoresist on the quartz substrate;

[0058] Step 3: Photoresist curing: Place the coated quartz substrate in a drying device and dry it according to the preset temperature and time to dry and cure the photoresist. During the curing process, control the drying temperature and time to avoid thermal decomposition or deformation of the photoresist.

[0059] Step 4: EUV lithography: The cured quartz substrate is sent to an EUV lithography machine and exposed using a high-power EUV light source. The pattern is transferred to the photoresist through a precisely controlled mask. During the lithography process, the exposure time, light source intensity, and mask alignment accuracy are controlled to ensure the accuracy and clarity of the lithography pattern. After exposure, a developer is used to remove the photoresist in the exposed and unexposed parts to form the desired pattern structure.

[0060] Step 5: Post-processing: The developed quartz substrate is hardened to enhance the stability of the photoresist in subsequent process steps. The developed quartz substrate is visually inspected to extract the key features of the surface graphic structure of the quartz substrate. Based on the key features of the quartz substrate, it is determined whether the graphic results meet the requirements, such as defects such as bridging, fractures, rough edges, etc. The developed and qualified quartz substrate is post-baked to remove the remaining solvent, improve the adhesion of the photoresist to the substrate, and improve the etching resistance of the photoresist. The subsequent processes of etching and ion implantation are carried out as needed to complete the manufacture of the IC chip.

[0061] In this embodiment, by selecting a photoresist with low absorption, high transparency and excellent anti-bubble performance, and using precision coating equipment, the generation of bubbles in high aspect ratio structures can be significantly reduced, the uniformity and quality of the coating can be improved, and the combination of dynamic control of the coating speed and the rotation speed can better adapt to quartz substrates of complex shapes or sizes, achieve a more ideal coating effect, and ensure the uniformity of the coating. By precisely controlling the exposure time, light source intensity and mask alignment accuracy during the extreme ultraviolet lithography process, the accuracy and clarity of the lithography pattern are ensured, the temperature and time control in the curing step, and the hardening film treatment in the post-processing improve the adhesion of the photoresist to the substrate and improve the etching resistance of the photoresist. Through visual inspection and post-baking treatment, the quality of the graphic structure on the surface of the quartz substrate after development is ensured, which provides a good foundation for subsequent processes such as etching and ion implantation, thereby improving the overall manufacturing quality and efficiency of the IC chip.

[0062] In this embodiment, the step 1: substrate pretreatment, further includes:

[0063] Before coating, preheat the quartz substrate at 80℃-120℃ for 3-5min to remove moisture from the substrate surface and improve the adhesion of the photoresist. Use a vacuum adsorption device to fix the preheated quartz substrate on the coating table to ensure that the substrate is flat and free of bubbles and has moderate adsorption force.

[0064] During the fixing process, the surface of the substrate is inspected by a visual inspection device to check whether the edges and corners of the substrate are completely fitted, to ensure that the substrate will not move or deform during glue coating, and to check whether there are scratches, dust, bubbles and other defects on the surface of the substrate. If there are defects, the substrate is pre-treated again.

[0065] In this embodiment, the risk of photoresist falling off in subsequent processes is reduced through preheating treatment, and the moderate adsorption force provided by the vacuum adsorption device can not only effectively fix the substrate, but also avoid damage to the substrate due to excessive adsorption force, thereby ensuring the stability of the substrate during the glue coating process. By inspecting the surface of the substrate with a visual inspection device, it is possible to promptly detect whether the edges and corners of the substrate are completely fitted, and whether there are defects such as scratches, dust, and bubbles, thereby ensuring the high cleanliness of the substrate and providing good starting conditions for the glue coating process, thereby improving the yield and reliability of the overall process.

[0066] In this embodiment, the visual inspection device inspects the surface of the substrate, and the specific steps are as follows:

[0067] Acquire image data of the quartz substrate based on the visual inspection device, and perform standardization processing on the acquired image data, including adjusting brightness and contrast, eliminating the influence of uneven illumination, and obtaining a standardized image;

[0068] Determine the area with obvious brightness change in the standardized image, identify the edge of the quartz substrate based on edge detection, and determine the appearance image of the quartz substrate;

[0069] Obtain the characteristic value of each pixel in the standardized image, such as color, brightness, texture, etc., and construct a characteristic matrix in the appearance image of the quartz substrate;

[0070] Among the image data of the quartz substrate acquired at different positions and brightness, one appearance image is extracted as a comparison sample to construct a first matrix;

[0071] Taking feature matrices in other appearance images as second matrices, and respectively calculating similarities between the first matrix and a plurality of second matrices;

[0072] When it is determined that the maximum similarity is greater than the preset threshold, the corresponding quartz substrate appearance image of the second matrix is ​​considered qualified, and is determined as a sample feature of the quartz substrate as a recognition result;

[0073] The acquired quartz substrate sample features are compared with the preset sample features. If the difference between the sample features and the preset features exceeds the preset range, it is determined that there are abnormalities on the surface of the quartz substrate, such as scratches, dust, bubbles and other defects;

[0074] If defects are detected on the substrate surface, a decision is made whether to re-preprocess the substrate based on the type and extent of the defects to ensure high cleanliness of the substrate surface.

[0075] In this embodiment, by standardizing the image data, adjusting the brightness and contrast, and eliminating the influence of uneven illumination, the image quality and detection accuracy are improved, the edge of the quartz substrate is accurately identified, the alignment accuracy of the substrate during the gluing process is ensured, and the characteristic values ​​of each pixel in the image, such as color, brightness, texture, etc., are extracted to construct a feature matrix, which provides a data basis for subsequent image analysis and comparison, calculates the similarity between different appearance images, and can quickly identify qualified quartz substrate appearance images, thereby improving detection efficiency, effectively identifying abnormalities on the substrate surface, and significantly improving the quality control level of the IC chip quartz substrate gluing process, providing a strong guarantee for the production of high-performance and high-reliability IC chips.

[0076] In this embodiment, the step 2: photoresist coating specifically includes:

[0077] Photoresist selection: extract key indicators based on the type of photoresist, including viscosity, curing speed and etching resistance, perform performance evaluation based on the extracted key indicators, and determine the photoresist based on the performance evaluation results;

[0078] In this embodiment, in the performance evaluation, the viscosity needs to be moderate to ensure uniformity and absence of bubbles during coating; the curing speed needs to match the exposure speed of the photolithography machine to avoid the flow or deformation of the photoresist during the exposure process; the etching resistance needs to be strong enough to withstand etching and other treatments in subsequent process steps;

[0079] Coating control: Coating equipment is selected based on the size and shape of the quartz substrate. The coating equipment evenly and continuously coats the selected photoresist on the quartz substrate. During the coating process, real-time feedback is obtained to dynamically control the coating speed, rotation speed and coating amount to ensure uniformity and bubble-free of the photoresist.

[0080] After the glue is applied, the quartz substrate is left to stand for 5-10 seconds. Meanwhile, the temperature of the standing environment is maintained within the range of 23±2°C and the relative humidity is maintained within the range of 40±5%, so that the photoresist forms a stable film on the substrate.

[0081] In this embodiment, through refined photoresist selection and precise coating control, the coating uniformity and consistency are improved, and process defects are reduced. Real-time feedback control ensures that the photoresist is evenly and continuously coated on the quartz substrate without bubble generation, thereby improving the transfer accuracy of the photolithography pattern and enhancing the stability and repeatability of the overall process.

[0082] In this embodiment, the glue coating speed, rotation speed and glue coating amount are dynamically controlled, specifically including:

[0083] When the coating equipment selection result is a spin coater, the spin coater evenly spreads the photoresist on the surface of the quartz substrate at a rotation speed of 500 rpm, and then gradually increases the rotation speed to 2500 rpm for 5-8 seconds to further level the coating and remove bubbles;

[0084] Meanwhile, the spin coater sensor monitors the coating status of the photoresist in real time, including thickness, uniformity, and bubble generation;

[0085] If uneven coating and bubble generation are detected, the coating speed is immediately adjusted to an accuracy of ±10%, the rotation speed to an accuracy of ±50rpm, and the coating amount to an accuracy of ±0.5μL to ensure uniformity and bubble-free photoresist on the quartz substrate.

[0086] In this embodiment, the coating speed accuracy of ±10% is represented by ±10% of the coating speed when the coating unevenness and bubble generation are detected. For example, if the coating speed is 700 μL / min when the coating unevenness and bubble generation are detected, the coating speed is changed within the range of 630 to 770 μL / min when the spin coater is adjusted;

[0087] In this embodiment, the rotation speed is adjusted to an accuracy of ±50 rpm. If the rotation speed is 2500 rpm when the coating unevenness and bubble generation are detected, the rotation speed of the spin coater is varied between 2450 and 2550 rpm during adjustment;

[0088] In this embodiment, the glue coating amount is accurate to ±0.5 μL. If the glue coating amount is 5 μL when coating unevenness and bubble generation are detected, the actual glue coating amount varies between 4.5 and 5.5 μL.

[0089] In this embodiment, the photoresist coating further includes coating quality detection, specifically:

[0090] Thickness measurement: non-contact thickness measurement of the coated photoresist layer is performed based on measuring instruments such as optical thickness measuring instruments or electron microscopes to determine whether the thickness of the photoresist layer is within a preset error range;

[0091] Uniformity detection: Use optical measuring instruments such as optical microscopes, optical detection instruments or surface analysis instruments to detect the flatness of the coated photoresist surface to ensure that the surface is flat and free of defects such as bubbles and cracks;

[0092] Adhesion test: Test the adhesion between the photoresist layer and the quartz substrate by methods such as scratch test or peel test. Based on the test results, the adhesion between the photoresist and the quartz substrate is evaluated to ensure that the adhesion is strong enough to withstand the treatment in the subsequent process steps;

[0093] In this embodiment, the adhesion between the photoresist layer and the quartz substrate is tested, specifically including:

[0094] Based on a test needle with a smooth and rounded needle, pressure is applied perpendicular to the photoresist surface, and the pressure is gradually increased so that the test needle passes through the photoresist surface to form scratches, and the critical pressure value at which the photoresist begins to peel off is recorded to quantify the adhesion strength;

[0095] According to the critical pressure value and the width and depth data of the scratch, the adhesion between the photoresist and the quartz substrate is calculated, and the calculated adhesion is compared with the standard of 0.5N / mm to evaluate whether the adhesion meets the standard;

[0096] At the same time, the test needle pressure data is read from the pressure sensor of the test needle, the test needle pressure data is compared with the preset pressure threshold, whether it is within the preset pressure threshold, and whether there is an abnormality on the photoresist surface is determined based on the comparison result;

[0097] If the test needle pressure data is within the preset pressure threshold and the photoresist begins to peel off at the critical pressure, the adhesion is considered to meet the standard;

[0098] If the photoresist starts to peel off when the test needle pressure data is far below the preset pressure threshold, or the photoresist still does not peel off when the test needle pressure data is far above the preset threshold, it means that the adhesion does not meet the standard;

[0099] Record the test data in detail, including critical pressure value, test needle pressure data, comparison results, etc., analyze the correlation between the calculated adhesion and critical pressure value, and compile and generate a test report for the quartz substrate based on the analysis results, including the test purpose, method, results, conclusions and suggestions, etc.

[0100] In this embodiment, non-contact thickness measurement is used to ensure the thickness uniformity of the photoresist layer and reduce process deviations caused by uneven thickness. Flatness detection ensures the surface quality of the photoresist layer and avoids defects such as bubbles and cracks, which is crucial for subsequent photolithography processes. Adhesion testing ensures that the photoresist can be firmly attached to the quartz substrate by quantifying the adhesion strength, which is crucial for subsequent etching, doping and other process steps. Real-time data reading and comparison with preset thresholds during the test process provide instant process monitoring, which is convenient for timely discovery and resolution of potential problems, can avoid the generation of waste in subsequent processes, reduce rework and material waste, reduce the risk of process failure due to insufficient adhesion, and improve production efficiency.

[0101] In this embodiment, step three: curing the photoresist is specifically as follows:

[0102] Place the quartz substrate coated with photoresist and passed the test at the feed port of the drying equipment, preheat the drying equipment to 100° C., and feed the quartz substrate into the preheated drying equipment at a constant speed for heating;

[0103] The temperature of the heating zone of the drying equipment is 150°C, and the time for the quartz substrate to be kept in the heating zone is within the range of 120s-180s to ensure that the solvent in the photoresist is fully evaporated and begins to solidify;

[0104] Move the heated and dried quartz substrate to the curing zone, raise the temperature to 200°C, and keep the quartz substrate in the curing zone for 280s-320s to ensure that the photoresist is completely cured;

[0105] After curing is completed, the quartz substrate is slowly moved out of the curing area and into the cooling area, and the temperature of the quartz substrate is gradually reduced to room temperature to prevent thermal stress from causing deformation of the quartz substrate or photoresist pattern, and a visual inspection is performed to confirm whether the photoresist is uniformly cured.

[0106] In this embodiment, by precisely controlling the preheating, heating, curing and cooling processes, it is ensured that the solvent in the photoresist is fully evaporated and completely cured, while avoiding deformation of the quartz substrate or photoresist pattern caused by thermal stress, improving the uniformity and stability of the photoresist layer, and providing a good pattern transfer foundation for subsequent photolithography processes, thereby improving the overall manufacturing quality, reliability and production efficiency of the IC chip.

[0107] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A high-cleanliness IC chip quartz substrate glue coating process, characterized in that: The following steps are involved: Step 1: Substrate pretreatment: Place the quartz substrate in an ultrasonic cleaner, clean it with deionized water and a cleaning agent, blow dry the substrate with nitrogen, and place it in a clean room to stand; Step 2: Photoresist coating: Select photoresist suitable for extreme ultraviolet lithography, and use precision coating equipment to evenly coat the photoresist on the quartz substrate; Step 3: Photoresist curing: Place the coated quartz substrate in a drying device and dry it according to the preset temperature and time to dry and cure the photoresist, and control the drying temperature and time during the curing process; Step 4: EUV lithography: The cured quartz substrate is sent into an EUV lithography machine and exposed using an EUV light source. During the lithography process, the exposure time, light source intensity, and mask alignment accuracy are controlled. After exposure, a developer is used to remove the photoresist in the exposed and unexposed parts to form the desired graphic structure. Step 5: Post-processing: The developed quartz substrate is hardened and then subjected to subsequent processes such as etching and ion implantation as required to complete the manufacture of the IC chip.

2. The high-cleanliness IC chip quartz substrate gluing process as claimed in claim 1, characterized in that: The step 1: substrate pretreatment, further comprises: Before gluing, preheat the quartz substrate at 80℃-120℃ for 3-5min. Use a vacuum adsorption device to fix the preheated quartz substrate on the gluing table. During the fixing process, the substrate surface is inspected by a visual inspection device to check whether the edges and corners of the substrate are completely fitted, and to check whether there are defects on the substrate surface. If there are defects, the substrate pretreatment is performed again.

3. A high-cleanliness IC chip quartz substrate gluing process as claimed in claim 2, characterized in that: The visual inspection device inspects the surface of the substrate, and the specific steps are as follows: Acquire image data of the quartz substrate based on a visual inspection device, and perform standardization processing on the acquired image data to obtain a standardized image; Determine the area with obvious brightness change in the standardized image, identify the edge of the quartz substrate based on edge detection, and determine the appearance image of the quartz substrate; Obtaining the feature value of each pixel in the standardized image and constructing a feature matrix in the appearance image of the quartz substrate; Among the image data of the quartz substrate acquired at different positions and brightness, one appearance image is extracted as a comparison sample to construct a first matrix; Taking feature matrices in other appearance images as second matrices, and respectively calculating similarities between the first matrix and a plurality of second matrices; When it is determined that the maximum similarity is greater than the preset threshold, the corresponding quartz substrate appearance image of the second matrix is ​​considered qualified, and is determined as a sample feature of the quartz substrate as a recognition result; The acquired quartz substrate sample features are compared with the preset sample features. If the difference between the sample features and the preset features exceeds a preset range, it is determined that there is an abnormality on the surface of the quartz substrate; If defects are detected on the substrate surface, a decision is made whether to re-preprocess the substrate based on the type and extent of the defects.

4. The high-cleanliness IC chip quartz substrate gluing process as claimed in claim 1, characterized in that: The step 2: photoresist coating, specifically includes: Photoresist selection: extract key indicators based on the type of photoresist, including viscosity, curing speed and etching resistance, perform performance evaluation based on the extracted key indicators, and determine the photoresist based on the performance evaluation results; Coating control: The coating equipment is selected based on the size and shape of the quartz substrate. The coating equipment evenly and continuously coats the selected photoresist on the quartz substrate. During the coating process, real-time feedback is obtained to dynamically control the coating speed, rotation speed and coating amount.

5. The high-cleanliness IC chip quartz substrate glue coating process as claimed in claim 4, characterized in that: Dynamically control the glue speed, rotation speed and glue amount, including: When the coating equipment selection result is a spin coater, the spin coater evenly spreads the photoresist on the surface of the quartz substrate at a rotation speed of 500 rpm, and then gradually increases the rotation speed to 2500 rpm for 5-8 seconds; Meanwhile, the spin coater sensor monitors the coating status of the photoresist in real time, including thickness, uniformity, and bubble generation; If uneven coating and bubble generation are detected, the glue coating speed is immediately adjusted to an accuracy of ±10%, the rotation speed to an accuracy of ±50rpm, and the glue coating amount to an accuracy of ±0.5μL.

6. A high-cleanliness IC chip quartz substrate glue coating process as claimed in claim 4, characterized in that: The coating control also includes: after the glue is applied, the quartz substrate is placed in a static state for 5-10 seconds, and at the same time, the temperature of the static environment is maintained within the range of 23±2°C and the relative humidity is maintained within the range of 40±5%.

7. A high-cleanliness IC chip quartz substrate glue coating process as claimed in claim 4, characterized in that: The photoresist coating also includes coating quality detection, specifically: Thickness measurement: non-contact thickness measurement of the coated photoresist layer is performed based on a measuring instrument to determine whether the thickness of the photoresist layer is within a preset error range; Uniformity detection: The flatness of the coated photoresist surface is detected based on optical measuring instruments; Adhesion test: The adhesion between the photoresist layer and the quartz substrate is tested, and the adhesion between the photoresist and the quartz substrate is evaluated based on the test results.

8. A high-cleanliness IC chip quartz substrate glue coating process as claimed in claim 7, characterized in that: Test the adhesion between the photoresist layer and the quartz substrate, including: Based on a test needle with a smooth and rounded needle, apply pressure perpendicular to the photoresist surface, gradually increase the pressure, make the test needle pass through the photoresist surface to form a scratch, and record the critical pressure value at which the photoresist starts to peel off; According to the critical pressure value and the width and depth data of the scratch, the adhesion between the photoresist and the quartz substrate is calculated, and the calculated adhesion is compared with the standard of 0.5N / mm to evaluate whether the adhesion meets the standard; At the same time, the test needle pressure data is read from the pressure sensor of the test needle, the test needle pressure data is compared with the preset pressure threshold, whether it is within the preset pressure threshold, and whether there is an abnormality on the photoresist surface is determined based on the comparison result; If the test needle pressure data is within the preset pressure threshold and the photoresist begins to peel off at the critical pressure, it is considered that the adhesion meets the standard; If the photoresist starts to peel off when the test needle pressure data is far below the preset pressure threshold, or the photoresist still does not peel off when the test needle pressure data is far above the preset threshold, it means that the adhesion does not meet the standard; Record the test data in detail during the test process, analyze the correlation between the calculated adhesion and the critical pressure value, and compile and generate a test report for the quartz substrate based on the analysis results.

9. The high-cleanliness IC chip quartz substrate glue coating process as claimed in claim 1, characterized in that: Step 3: Photoresist curing, specifically: Place the quartz substrate coated with photoresist and passed the test at the feed port of the drying equipment, preheat the drying equipment to 100° C., and feed the quartz substrate into the preheated drying equipment at a constant speed for heating; The temperature of the heating zone of the drying equipment is 150°C, and the time for keeping the quartz substrate in the heating zone is within the range of 120s-180s; Move the heated and dried quartz substrate to the curing zone, raise the temperature to 200°C, and keep the quartz substrate in the curing zone for 280s-320s; After curing is completed, the quartz substrate is slowly moved out of the curing area and into the cooling area, the temperature of the quartz substrate is gradually lowered to room temperature, and a visual inspection is performed to confirm whether the photoresist is uniformly cured.

10. The high-cleanliness IC chip quartz substrate glue coating process as claimed in claim 1, characterized in that: The step 5 of performing a hardening treatment on the developed quartz substrate also includes: Perform visual inspection on the developed quartz substrate to extract key features of the surface graphic structure of the quartz substrate. Based on the key features of the quartz substrate, determine whether the graphic results meet the requirements. Perform post-baking on the developed quartz substrate that meets the requirements to remove the remaining solvent.

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