Bionic structure thermophoton active refrigeration device based on electroluminescent effect

Abstract

The invention provides a thermophoton active refrigeration device with a bionic structure based on an electroluminescent effect, and particularly belongs to the technical field of solid refrigeration. The negative voltage electroluminescence characteristic of a semiconductor material is utilized, the thermo-photon capacity of the semiconductor material is restrained through the negative voltage electroluminescence effect, heat can be transmitted to the high-temperature semiconductor material from the low-temperature thermo-photon emitting end composite structure, and therefore heat flow can reach the high-temperature end from the low-temperature end, and the refrigeration effect is achieved. An electric field is applied to the material, so that radiation photon energy of the material is changed, a certain heat effect is generated, the refrigeration effect is achieved, traditional refrigerants are not involved, the energy transmission path is simple, and the material has the advantages of efficient energy utilization, environmental protection, miniaturized application, quick response, multi-field application and the like. The device comprises a thermo-photon emission end composite structure and a semiconductor battery composite structure, and further comprises a shell body and an electrode assembly.

Description

Technical Field

[0001] The invention relates to a bionic structure thermophoton active refrigeration device based on electroluminescent effect, and specifically belongs to the technical field of solid refrigeration. Background Art

[0002] Compared with traditional refrigeration technology, electroluminescence technology does not rely on refrigerants and can provide more flexible thermal field control, which is expected to achieve efficient cooling technology that meets the needs of the low-carbon digital era. Electroluminescence refrigeration is a method of applying an electric field to a material to change the energy of thermal photons, thereby generating a certain thermal effect, thereby achieving a cooling effect.

[0003] This technology has the advantages of not involving traditional refrigerants, simple energy transmission paths, and super-Planck energy transmission. It is expected to achieve the synergy of high refrigeration coefficient and high refrigeration power, breaking the shackles of traditional thermoelectric refrigeration based on the Peltier effect. In addition, compared with existing refrigeration devices, it is smaller in size and lighter in weight, suitable for micro-integrated applications, making it possible to achieve innovative applications in wearable devices and passive heat dissipation, smart buildings, medical equipment and other fields, and promote the development of these fields. Summary of the invention

[0004] The purpose of the present invention is to provide a bionic structure thermophoton active cooling device based on electroluminescent effect to solve the technical problem that the existing solid-state refrigeration technology is difficult to achieve the synergistic technical problem of high refrigeration coefficient and high refrigeration power.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is: the invention includes a composite structure of a thermal photon emission end and a composite structure of a semiconductor battery, and also includes a shell body and an electrode assembly;

[0006] The thermal photon emission end composite structure includes a bionic supersurface film and an emission end substrate, the bionic supersurface film is arranged on the top surface of the emission end substrate, and the semiconductor battery composite structure includes a P-type mercury cadmium telluride layer, an I-type mercury cadmium telluride layer and an N-type mercury cadmium telluride layer arranged from the outside to the inside; the electrode assembly includes a back electrode and a front electrode, the top surface of the semiconductor battery composite structure is provided with a back electrode, the top surface of the epitaxial part of the N-type mercury cadmium telluride layer is provided with a front electrode, the bottom surface of the epitaxial part of the back electrode is provided with a shell body, the other end of the shell body is connected to the epitaxial part of the emission end substrate, and a gap is formed between the thermal photon emission end composite structure and the semiconductor battery composite structure through the shell body.

[0007] Furthermore, the semiconductor battery composite structure is composed of a PIN structure, and an Au layer is formed on an InAs wafer substrate by magnetron sputtering technology. The layer is used as the back electrode of the photovoltaic semiconductor cell, and a P-type mercury cadmium telluride layer, an I-type mercury cadmium telluride layer and an N-type mercury cadmium telluride layer are stacked from bottom to top by vapor phase epitaxial growth technology, wherein the P-type mercury cadmium telluride layer and the N-type mercury cadmium telluride layer form a tunnel junction for transmitting carriers generated by the I-type mercury cadmium telluride absorption layer, and finally a front electrode is arranged on the outer edge of the N-type mercury cadmium telluride layer by using an Au electrode wet etching process based on maskless lithography.

[0008] The composite structure of the thermal photon emission end is composed of a high bandgap radiation energy generation coating and an emission end substrate. The high bandgap radiation energy generation coating is plated on the upper surface of the emission end substrate, wherein the emission end substrate is composed of a highly doped silicon wafer, and the doping concentration of the highly doped silicon wafer is greater than 10 20 cm -3 The surface roughness of the emitting end substrate is less than 10 nanometers, and the high bandgap radiation energy generating coating is composed of a polymer resonance film, which is composed of a patterned nano-array structure and an intrinsic silicon matrix material.

[0009] Furthermore, the back electrode and the front electrode are connected via a DC power supply, and the voltage between the back electrode and the front electrode is 0V-0.25V.

[0010] Furthermore, the patterned nanoarray structure is composed of periodically arranged morpho butterfly-like bionic micro-nano structures, and gate-wing structures of the same thickness and width are asymmetrically distributed on both sides of the patterned nanoarray structure. The thickness of each gate wing is 10 nanometers, and the distance between the gate wings is 10 nanometers. The distribution period between the bionic micro-nano structures is 100 nanometers. The material of the bionic micro-nano structure is hBN, and the matrix material is composed of low-radiation materials such as intrinsic silicon and SU8, and the thickness of the matrix material is 100 nanometers.

[0011] Furthermore, the thickness of the P-type HgCdTe layer is 100 nanometers to 500 nanometers, the thickness of the I-type HgCdTe layer is 100 nanometers to 2000 nanometers, and the thickness of the N-type HgCdTe layer is 100 nanometers to 500 nanometers.

[0012] Furthermore, the shell body is made of Cu4TiSe4 crystal material, and the vertical spacing of the shell body is 410 nanometers to 3600 nanometers.

[0013] Furthermore, the shell body and the P-type HgCdTe layer, the I-type HgCdTe layer, and the N-type HgCdTe layer are deposited on the bottom surface of the back electrode by magnetron sputtering.

[0014] The beneficial effects of the present invention are:

[0015] 1. Utilize the negative voltage electroluminescent characteristics of semiconductor materials, through the negative voltage electroluminescent effect, suppress the thermal photon capacity of semiconductor materials, so that heat can be transferred from the low-temperature thermal photon emission end composite structure to the high-temperature semiconductor material, thereby achieving heat flow from the low-temperature end to the high-temperature end, achieving a cooling effect.

[0016] 2. By applying an electric field in the material, the energy of the radiated photons changes, producing a certain thermal effect, thereby achieving a cooling effect. This does not involve traditional refrigerants and the energy transmission path is simple. It has the advantages of efficient energy utilization, green environmental protection, miniaturized application, rapid response and multi-field application.

[0017] 3. By using evanescent waves as the main energy carrier, its heat transfer can exceed the blackbody radiation limit by several orders of magnitude. In addition, the spectral energy distribution of the device is not bound by Planck's law and exhibits an obvious monochromatic effect. Its theoretical limit can approach the Carnot efficiency.

[0018] 4. Compared with thin films and traditional gratings, this bionic metasurface shows significant advantages in radiative heat transfer capability. The enhancement originates from the inherent three-dimensional hierarchical local resonance inside the structure, which effectively changes the distribution of thermal photon tunneling wave vectors and provides an unconventional thermal photon tunneling mode, thereby effectively enhancing the energy spectrum of the thermal metasurface. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a structural diagram of the thermal photon active refrigeration device based on thermal photon tunneling of the present invention;

[0020] Figure 2 It is a schematic diagram of the bionic supersurface film structure. DETAILED DESCRIPTION

[0021] The following will be combined with the attached Figure 1-2 , clearly and completely describe the technical solutions in the embodiments.

[0022] Specific implementation method 1: Figure 1 As shown, a bionic structure thermophoton active cooling device based on electroluminescent effect, the device as a whole is composed of a thermophoton emission end composite structure, a semiconductor battery composite structure, a shell body 3 and an electrode assembly, and a back electrode 4, a P-type mercury cadmium telluride layer 5, an I-type mercury cadmium telluride layer 6, an N-type mercury cadmium telluride layer 7, a bionic supersurface film 1 and an emission end substrate 2 are sequentially arranged from top to bottom, a front electrode 8 is attached to the epitaxial part of the N-type mercury cadmium telluride layer 7 by magnetron sputtering technology, and the shell body 3 is attached to the epitaxial part of the back electrode 4 by magnetron sputtering technology;

[0023] The shell body 3, the back electrode 4, the P-type mercury cadmium telluride layer 5, the I-type mercury cadmium telluride layer 6, the N-type mercury cadmium telluride layer 7 and the front electrode 8 together constitute the hot end part of the negative voltage electroluminescent refrigeration device;

[0024] The hot end part is placed upside down on the top surface of the emitting end substrate 2, and a vacuum gap is formed between the thermal photon emitting end composite structure and the semiconductor battery composite structure through the shell body 3;

[0025] The composite structure of the thermal photon emission end is composed of a high-bandgap radiation energy generating coating and an emission end substrate 2. The high-bandgap radiation energy generating coating is coated on the upper surface of the emission end substrate 2. The bionic supersurface film 1 is composed of a patterned nanoarray structure and a matrix material. The patterned nanoarray is composed of a periodically arranged bionic micro-nano structure similar to a morpho butterfly. The bionic structure has asymmetrically distributed gate-wing structures of the same thickness and width on both sides. The thickness of each gate wing is 10 nanometers, and the distance between the gate wings is 10 nanometers. The distribution period between the bionic micro-nano structures is 100 nanometers. The material of the bionic micro-nano structure is hBN, and the matrix material is composed of SU8, such as Figure 2 As shown, the thickness of the matrix material is 100 nanometers; the temperature of the thermal emitter is 295 Kelvin-350 Kelvin;

[0026] The material of the semiconductor battery composite structure is mercury cadmium telluride, and the band gap frequency of mercury cadmium telluride is 2.568×1014rad / s. The lower band gap frequency can ensure that it can have a wider spectrum radiation frequency to participate in the semiconductor electron transition process; the thickness of the P-type mercury cadmium telluride layer 5 is 100 nanometers to 500 nanometers, the thickness of the I-type mercury cadmium telluride layer 6 is 100 nanometers to 2000 nanometers, and the thickness of the N-type mercury cadmium telluride layer 7 is 100 nanometers to 500 nanometers. The temperature of the semiconductor battery is 300 Kelvin to 355 Kelvin;

[0027] The vertical spacing of the shell body 3 is 610 nanometers, that is, the spacing between the N-type HgCdTe layer 7 and the bionic supersurface film 1 is 10 nanometers; the shell body 3 is composed of Cu4TiSe4 crystal material and is prepared on the surface of the back electrode 4 by vapor phase epitaxial growth technology and photolithography;

[0028] The back electrode 4 and the front electrode 8 are connected by a DC power supply, and the voltage between the back electrode 4 and the front electrode 8 is 0V-0.25V, wherein the N pole is the positive end of the voltage and the P pole is the negative end of the voltage;

[0029] Specific embodiment 2: This embodiment differs from specific embodiment 1 in that the vertical spacing of the shell body 3 is 1100 nanometers, that is, the spacing between the N-type mercury cadmium telluride layer 7 and the bionic supersurface 1 is 100 nanometers, and the other steps and parameters are the same as those in specific embodiment 1.

[0030] Specific embodiment 3: This embodiment differs from specific embodiment 2 in that: the vertical spacing of the shell body 3 is 2000 nanometers, that is, the spacing between the N-type mercury cadmium telluride layer 7 and the bionic supersurface film 1 is 1000 nanometers, and the other steps and parameters are the same as those of specific embodiment 1;

[0031] In this embodiment, when no voltage is applied to the semiconductor, that is, under equilibrium conditions, the chemical potential of the photon is equal to zero. However, when the semiconductor PN junction is under an external bias voltage, the photon Planck energy above the band gap in the semiconductor will be modified by the voltage. When the external bias voltage is a negative voltage, that is, the N pole is the positive end of the voltage and the P pole is the negative end of the voltage, the photon Planck energy of the semiconductor is suppressed, and the actual thermal photon energy of the semiconductor will be significantly less than its nominal thermal photon energy. At this time, although the actual temperature of the thermal photon emission end is lower than the actual temperature of the semiconductor end, the actual radiation energy of the thermal photon emission end is higher than the actual thermal photon energy of the semiconductor end, so that the heat flow can reach the high temperature end from the low temperature end, achieving a cooling effect. With the continuous increase of voltage, the radiation heat exchange capacity of the system will be strongly increased. With the increase of voltage, the cooling power density of the thermal photon active cooling device based on thermal photon tunneling will continue to increase. And thanks to the monochromatic effect of thermal photon tunneling and the simple characteristics of the energy transmission path, the thermal photon energy transfer of the system can be completely concentrated above the semiconductor band gap frequency, greatly increasing the cooling efficiency of the system.

[0032] The device transfers energy through thermal photons, and uses an external bias voltage to suppress the Planck energy of photons above the band gap in the semiconductor, so that the actual thermal photon energy of the semiconductor will be significantly less than its nominal thermal photon energy, and then the actual radiation energy of the thermal photon emission end is higher than the actual thermal photon energy of the semiconductor end, so that the energy flow from the low temperature end to the high temperature end is achieved, and an efficient cooling effect is achieved. At the same time, the active cooling device based on thermal photon tunneling of the present invention has the advantages of not involving traditional refrigerants, simple energy transmission paths, and super-Planck energy transmission, and is particularly suitable for wearable thermal management systems, in-situ thermal management of power batteries, cooling of medical equipment and biological samples, lightweight thermal management systems, and other fields.

[0033] The above is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with this profession can make some changes or modify the technical contents disclosed above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent replacement and improvement made to the above embodiments without departing from the content of the technical solution of the present invention, based on the technical essence of the present invention, within the spirit and principles of the present invention, still fall within the protection scope of the technical solution of the present invention.

Claims

1. A bionic structure thermal photon active cooling device based on electroluminescent effect, comprising a thermal photon emission end composite structure and a semiconductor battery composite structure, characterized in that: It also includes a shell body (3) and an electrode assembly; The thermal photon emission end composite structure comprises a bionic supersurface film (1) and an emission end substrate (2), wherein the bionic supersurface film (1) is arranged on the top surface of the emission end substrate (2), and the semiconductor battery composite structure comprises a P-type mercury cadmium telluride layer (5), an I-type mercury cadmium telluride layer (6), and an N-type mercury cadmium telluride layer (7) arranged from top to bottom; The electrode assembly comprises a back electrode (4) and a front electrode (8); the back electrode (4) is arranged on the top surface of the semiconductor battery composite structure; the front electrode (8) is arranged on the top surface of the epitaxial part of the N-type mercury cadmium telluride layer (7); the shell body (3) is arranged on the bottom surface of the epitaxial part of the back electrode (4); the other end of the shell body (3) is connected to the epitaxial part of the emission end substrate (2); and a gap is formed between the thermal photon emission end composite structure and the semiconductor battery composite structure through the shell body (3).

2. The bionic structure thermophoton active cooling device based on electroluminescent effect according to claim 1 is characterized in that: The back electrode (4) and the front electrode (8) are connected via a direct current power supply, and the voltage between the back electrode (4) and the front electrode (8) is 0 volts to 0.25 volts.

3. The bionic structure thermophoton active cooling device based on electroluminescent effect according to claim 1 is characterized in that: The bionic super surface film (1) is composed of a polymer resonance film, and the polymer resonance film is composed of a patterned nano array structure and an intrinsic silicon matrix material.

4. The bionic structure thermophoton active cooling device based on electroluminescent effect according to claim 3 is characterized in that: The patterned nanoarray structure is composed of periodically arranged bionic micro-nano structures similar to the Morpho butterfly. Gate-wing structures of the same thickness and width are asymmetrically distributed on both sides of the patterned nanoarray structure. The thickness of each gate-wing is 10 nanometers, and the distance between the gate-wings is 10 nanometers. The distribution period between the bionic micro-nano structures is 100 nanometers. The material of the bionic micro-nano structure is hBN, and the matrix material is composed of SU8. The thickness of the matrix material is 100 nanometers.

5. The bionic structure thermophoton active cooling device based on electroluminescent effect according to claim 1 is characterized in that: The transmitting end substrate (2) is composed of a highly doped silicon wafer, and the doping concentration of the highly doped silicon wafer is greater than 10 20 cm -3 , and the surface roughness of the emitting end substrate (2) is less than 10 nanometers.

6. The bionic structure thermophoton active cooling device based on electroluminescent effect according to claim 1, characterized in that: The thickness of the P-type mercury cadmium telluride layer (5) is 100 nanometers to 500 nanometers, the thickness of the I-type mercury cadmium telluride layer (6) is 100 nanometers to 2000 nanometers, and the thickness of the N-type mercury cadmium telluride layer (7) is 100 nanometers to 500 nanometers.

7. The bionic structure thermophoton active cooling device based on electroluminescent effect according to claim 1 is characterized in that: The shell body (3) is made of Cu4TiSe4 crystal material, and the vertical spacing of the shell body (3) is 410 nanometers to 3600 nanometers.

8. The bionic structure thermophoton active cooling device based on electroluminescent effect according to claim 1, characterized in that: The shell body (3) and the P-type mercury cadmium telluride layer (5), the I-type mercury cadmium telluride layer (6), and the N-type mercury cadmium telluride layer (7) are deposited and plated on the bottom surface of the back electrode (4) by magnetron sputtering.

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