Manufacturing method of functional film

Abstract

The invention discloses a method for manufacturing a functional film, which comprises the following steps of: 1, cleaning a substrate, namely selecting a substrate material, treating the surface, cleaning, drying and laminating for later use; step 2, plating an antireflection film layer: plating a SiO2 film and the antireflection film layer formed by alternately and repeatedly plating a Si3N4 film and a SiON film on the substrate; step 3, plating a SiO2 binding layer: plating the SiO2 binding layer on the surface of the antireflection film layer; step 4, plating a superhard film layer: plating the superhard film layer formed by Si3N4 films and CNx films alternately on the surface of the SiO2 binding layer; step 5, re-plating a SiO2 binding layer: re-plating the SiO2 binding layer on the surface of the super-hard film layer; and step 6, plating an anti-fingerprint film layer: evaporating the anti-fingerprint film layer on the surface of the thin film. According to the method provided by the invention, the superhard composite film layer is introduced between the antireflection film and the anti-fingerprint film, so that the film has high transmittance, low reflection and fingerprint resistance, and also has high hardness.

Description

Technical Field

[0001] The invention relates to a film preparation method in the technical field of touch screens, and in particular to a method for manufacturing a functional film. Background Art

[0002] With the upgrading of consumer electronic products and people's pursuit of high-quality products, it has become a common practice in the industry to coat the surface of touch screens such as mobile phone front covers with functional films. By coating an anti-reflective film layer and an anti-fingerprint film layer, the display is clearer and has excellent hydrophobic, anti-fingerprint and anti-oil properties.

[0003] However, the anti-reflection film superimposed on the anti-fingerprint film has the defects of low hardness and poor scratch resistance. After using it for a period of time, as the number of times the hand slides on the screen and the friction between clothes increases, the surface film layer will gradually be scratched and fall off, and will lose its excellent performance. Summary of the invention

[0004] The purpose of the present invention is to provide a method for manufacturing a functional film for a touch screen, which aims to overcome the shortcomings of the prior art and enable the film to have high transmittance, low reflection and anti-fingerprint properties as well as high hardness.

[0005] In order to achieve the above-mentioned object, the present invention provides a method for manufacturing a functional film, wherein the method comprises: step 1, substrate cleaning: selecting a substrate material, treating the surface, and then cleaning and drying it, and coating it for use; step 2, anti-reflection film coating: coating a SiO2 film, and an anti-reflection film layer composed of an alternating Si3N4 film and a SiON film on the substrate; step 3, SiO2 bonding layer coating: coating a SiO2 bonding layer on the surface of the anti-reflection film layer obtained in step 2; step 4, super-hard film coating: coating a Si3N4 film and a CN on the surface of the SiO2 bonding layer obtained in step 3 x The superhard film layer is composed of alternating films; step 5, coating a SiO2 bonding layer: coating a SiO2 bonding layer again on the surface of the superhard film layer obtained in step 4; step 6, coating an anti-fingerprint film layer: on the surface of the thin film obtained in step 5, vapor-deposit an anti-fingerprint film layer.

[0006] The above-mentioned method for manufacturing the functional film, wherein the step 1 is to select any one of glass, tempered glass, and microcrystalline glass, and process it into a substrate of the required size, first treat the surface of the substrate with plasma, then clean it with a neutral detergent, then rinse it with clean water and dry it, and finally coat it for use in the next process.

[0007] The above-mentioned method for manufacturing a functional film, wherein the step 2 comprises: step 2.1, loading the substrate into the chamber of a vacuum coating machine, and starting to evacuate the chamber, wherein the vacuum degree range is 1.0×10 -4 ~2.0×10-3 Pa, then introduce argon and oxygen, the argon flow rate is 100-800sccm, the oxygen flow rate is 100-1000sccm, and then turn on the Si target source, the target power is 8-20KW, the voltage is 200-1000V, and SiO2 film is plated; step 2.2, keep the argon flow rate at 100-800sccm, introduce oxygen and nitrogen, the oxygen flow rate is 100-1000sccm, the nitrogen flow rate is 100-1000sccm, turn on the Si target source, and plate a SiON film on the SiO2 film; step 2.3, turn off the oxygen, introduce nitrogen, the nitrogen flow rate is 100-1000sccm, and plate a Si3N4 film on the SiON film; step 2.4, repeat the process of step 2.2 and step 2.3 several times to form a film layer of SiON film and Si3N4 film alternating and repeated.

[0008] The above-mentioned method for manufacturing a functional thin film, wherein, in the step 2.4, the film layer structure of the SiON film and the Si3N4 film formed by alternating and repeating is SiON film-(Si3N4 film-SiON film) n , n>1.

[0009] In the above-mentioned method for manufacturing the functional film, the step 3 is to turn off the nitrogen, introduce oxygen, and plate a SiO2 film on the anti-reflection film layer as the first bonding layer.

[0010] In the above-mentioned method for manufacturing the functional film, in the step 3, the SiO2 film is plated with the process parameters of oxygen flow rate of 100-1000sccm, target power of 6-18KW, and voltage of 200-1000V.

[0011] The method for manufacturing the functional film, wherein the step 4 comprises: step 4.1, continuously evacuating the vacuum to a vacuum degree range of 1.0×10 -4 ~2.0×10 -3 Pa, then introduce argon and nitrogen, the argon flow rate is 100-800sccm, the nitrogen flow rate is 100-1000sccm, turn on the Si target source, and plate a Si3N4 film on the first bonding layer; step 4.2, keep the argon flow rate at 100-800sccm, introduce nitrogen, the nitrogen flow rate is 50-600sccm, turn on the graphite target source, the current is 8-30A, and plate CN on the Si3N4 film x Step 4.3, repeat the process of step 4.1 and step 4.2 to finally form Si3N4 film-CN x The membrane layers of the membrane combination.

[0012] In the above-mentioned method for manufacturing the functional film, the step 5 is to turn off the nitrogen and graphite target sources, introduce oxygen with an oxygen flow rate of 100 to 1000 sccm, and then turn on the Si target source to plate a SiO2 film on the superhard film layer as a second bonding layer.

[0013] The above-mentioned method for manufacturing a functional film, wherein the step 6 is to plate an anti-fingerprint film layer on the second bonding layer by evaporation, and evaporate the anti-fingerprint solution evenly onto the film surface of the product by resistance heating.

[0014] The above-mentioned method for manufacturing the functional film, wherein in the step 6, the process parameters for evaporation of the anti-fingerprint film are a heating current of 200-600A and a film thickness of 15-200nm. After breaking the air, the semi-finished product is taken out and allowed to stand for 4-24 hours in an environment with a relative humidity of 40%-60% to complete the coating.

[0015] The method for manufacturing the functional film provided by the present invention has the following advantages:

[0016] The present invention achieves the effects of high transmittance and low reflectivity by means of anti-reflection film layers that are alternately repeated with Si3N4 films and SiON films; achieves the effects of high hardness and high wear resistance by introducing a layer of super-hard composite film layer between the anti-reflection film and the anti-fingerprint film; and achieves good bonding strength between the film layers by coating SiO2 films between the anti-reflection film layer and the super-hard layer, and between the super-hard film layer and the anti-fingerprint film layer, so that the film layers are tightly bonded and will not fall off or have gaps.

[0017] The entire coating process of this method is carried out in a vacuum chamber, which reduces the conversion process and simplifies the process flow. It is not only beneficial to the control of product appearance quality, but also conducive to ensuring stable product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the functional film structure of the present invention.

[0019] Among them, 1, substrate; 2, anti-reflection film layer; 21, SiO2 film; 22, SiON film; 23, first Si3N4 film; 3, first bonding layer; 4, superhard film layer; 41, second Si3N4 film; 42, CN x Film; 5. second bonding layer; 6. anti-fingerprint film layer. DETAILED DESCRIPTION

[0020] The specific implementation of the present invention will be further described below in conjunction with the accompanying drawings.

[0021] The manufacturing method of the functional film provided by the present invention comprises: step 1, cleaning the substrate 1: selecting the substrate material, treating the surface, cleaning and drying, and laminating the substrate for use; step 2, coating the anti-reflection film layer: coating the substrate with a SiO2 film 21 and an anti-reflection film layer 2 composed of an Si3N4 film and a SiON film 22 alternately and repeatedly; step 3, coating the SiO2 bonding layer: after coating the anti-reflection film layer, coating the SiO2 bonding layer on the surface of the anti-reflection film layer obtained in step 2; step 4, coating the superhard film layer: coating the Si3N4 film and the CN on the surface of the SiO2 bonding layer obtained in step 3 x The superhard film layer 4 is composed of the film 42 alternately; step 5, SiO2 bonding layer is plated again: after the superhard film layer is plated, SiO2 bonding layer is plated again on the surface of the superhard film layer obtained in step 4; step 6, anti-fingerprint film layer is plated: on the surface of the film obtained in step 5, anti-fingerprint film layer 6 is evaporated. The structure of the obtained functional film can be found in Figure 1 shown.

[0022] Preferably, step 1 is to select any one of glass, tempered glass, and microcrystalline glass, and process it into a substrate 1 of the required size. The surface of the substrate is first treated with plasma, then cleaned with a neutral detergent, rinsed with clean water and dried, and finally coated for use in the next process.

[0023] Step 2 includes: Step 2.1, loading the substrate onto the umbrella in the chamber of the vacuum coating machine, and starting to evacuate the vacuum, with a vacuum range of 1.0×10 -4 ~2.0×10 -3 Pa, then introduce argon and oxygen, the argon flow rate is 100-800sccm, the oxygen flow rate is 100-1000sccm, then turn on the Si target source, the target power is 8-20KW, the voltage is 200-1000V, and the SiO2 film 21 is plated; step 2.2, keep the argon flow rate at 100-800sccm, introduce oxygen and nitrogen, the oxygen flow rate is 100-1000sccm, the nitrogen flow rate is 100-1000sccm, turn on the Si target source, the target power is 8-20KW, the voltage is 2 00-1000V, a SiON film 22 is plated on the SiO2 film; step 2.3, maintain the argon flow rate at 100-800sccm, turn off the oxygen, introduce nitrogen, the nitrogen flow rate is 100-1000sccm, turn on the Si target source, the target power is 8-20KW, the voltage is 200-1000V, and a first Si3N4 film 23 is plated on the SiON film; step 2.4, repeat the process of step 2.2 and step 2.3 several times to form a film layer of SiON film and Si3N4 film alternating and repeating.

[0024] In step 2.4, the film structure of the SiON film and the Si3N4 film formed by alternating and repeating is SiON film-(Si3N4 film-SiON film)n , n>1.

[0025] For example, a film layer of “SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film” is finally formed.

[0026] Step 3 is to turn off the nitrogen, introduce oxygen, and plate a SiO2 film on the anti-reflection film layer as the first bonding layer 3.

[0027] In step 3, the argon gas flow rate is maintained at 100-800 sccm, and the SiO2 film is deposited with the process parameters of oxygen flow rate of 100-1000 sccm, target power of 6-18 KW, and voltage of 200-1000 V.

[0028] Step 4 includes: Step 4.1, continuous vacuuming, the vacuum range is 1.0×10 -4 ~2.0×10 -3 Pa, then introduce argon and nitrogen, the argon flow rate is 100-800sccm, the nitrogen flow rate is 100-1000sccm, turn on the Si target source, the target power is 8-20KW, the voltage is 200-1000V, and a second Si3N4 film 41 is plated on the first bonding layer; step 4.2, keep the argon flow rate at 100-800sccm, introduce nitrogen, the nitrogen flow rate is 50-600sccm, turn on the graphite target source, the current is 8-30A, and CN is plated on the Si3N4 film x Film 42; Step 4.3, repeat the process of steps 4.1 and 4.2 to finally form a Si3N4 film-CN x The membrane layers of the membrane combination.

[0029] The obtained film structure is (Si3N4 film-CN x membrane) m , m≥1. For example, Si3N4 film-CN x Membrane-Si3N4 membrane-CN x membrane.

[0030] Step 5 is to turn off the nitrogen and graphite target sources, maintain the argon flow rate at 100-800sccm, introduce oxygen with an oxygen flow rate of 100-1000sccm, then turn on the Si target source with a target power of 6-18KW and a voltage of 200-1000V, and plate a SiO2 film on the superhard film layer as the second bonding layer 5.

[0031] Step 6 is to plate an anti-fingerprint film layer on the second bonding layer by evaporation, and evaporate the anti-fingerprint solution evenly onto the film surface of the product by resistance heating.

[0032] In step 6, the process parameters of the anti-fingerprint film evaporation are heating current 200-600A, film thickness 15-200nm, and the semi-finished product is taken out after breaking the air, and is left to stand for 4-24 hours in an environment with a relative humidity of 40%-60% to complete the coating.

[0033] The production equipment and other process conditions used in the present invention are known to those skilled in the art.

[0034] The method for manufacturing the functional film provided by the present invention is further described below in conjunction with embodiments.

[0035] Example 1

[0036] A method for manufacturing a functional film, comprising:

[0037] Step 1, substrate cleaning: select the substrate material, treat the surface, clean and dry it, and then coat it for use.

[0038] Preferably, microcrystalline glass is selected and processed into a substrate of a desired size. The surface of the substrate is first treated with plasma, then cleaned with a neutral detergent, rinsed with clean water and dried, and finally coated for use in the next process.

[0039] Step 2, coating an anti-reflection film layer: coating a SiO2 film, and an anti-reflection film layer composed of alternating and repeated Si3N4 films and SiON films on the substrate.

[0040] Step 2 includes:

[0041] Step 2.1, load the substrate into the chamber of the vacuum coating machine and start to evacuate the chamber. The vacuum range is 1.0×10 -4 ~2.0×10 -3 Pa, then introduce argon and oxygen, the argon flow rate is 100-800sccm, the oxygen flow rate is 100-1000sccm, then turn on the Si target source, the target power is 8-20KW, the voltage is 200-1000V, and SiO2 film is plated;

[0042] Step 2.2, maintaining the argon flow rate at 100-800 sccm, introducing oxygen and nitrogen, with the oxygen flow rate at 100-1000 sccm and the nitrogen flow rate at 100-1000 sccm, turning on the Si target source, and depositing a SiON film on the SiO2 film;

[0043] Step 2.3, turn off oxygen, introduce nitrogen, the nitrogen flow rate is 100-1000 sccm, and deposit a Si3N4 film on the SiON film;

[0044] Step 2.4, repeat the process of step 2.2 and step 2.3 several times to form a film layer of SiON film and Si3N4 film repeated alternately.

[0045] The film structure of the SiON film and the Si3N4 film formed by alternating and repeating is SiON film-(Si3N4 film-SiON film) n , n>1.

[0046] Preferably, a film layer of “SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film” is finally formed.

[0047] Step 3, plating a SiO2 bonding layer: plating a SiO2 bonding layer on the surface of the anti-reflection film layer obtained in step 2.

[0048] Preferably, the nitrogen is turned off, and oxygen is introduced, with the process parameters of oxygen flow rate of 100-1000sccm, target power of 6-18KW, and voltage of 200-1000V, to deposit a SiO2 film on the anti-reflection film layer as the first bonding layer.

[0049] Step 4: Plating a superhard film layer: Plating a Si3N4 film and a CN on the surface of the SiO2 bonding layer obtained in step 3 x An ultra-hard film layer composed of alternating films.

[0050] Step 4 includes:

[0051] Step 4.1: Continuously evacuate the air with a vacuum range of 1.0×10 -4 ~2.0×10 -3 Pa, then introduce argon and nitrogen, with an argon flow rate of 100-800sccm and a nitrogen flow rate of 100-1000sccm, turn on the Si target source, and deposit a Si3N4 film on the first bonding layer.

[0052] Step 4.2, maintain the argon flow rate at 100-800sccm, introduce nitrogen, the nitrogen flow rate is 50-600sccm, turn on the graphite target source, the current is 8-30A, and CN is plated on the Si3N4 film. x membrane.

[0053] Step 4.3, repeat the process of step 4.1 and step 4.2 to finally form Si3N4 film-CN x The membrane layers of the membrane combination.

[0054] Preferably, the obtained film structure is (Si3N4 film-CN x membrane) m , m≥1. For example, Si3N4 film-CN x Membrane-Si3N4 membrane-CN x membrane.

[0055] Step 5, re-plating a SiO2 bonding layer: on the surface of the superhard film layer obtained in step 4, re-plating a SiO2 bonding layer.

[0056] Preferably, the nitrogen and graphite target sources are turned off, oxygen is introduced, and the oxygen flow rate is 100-1000 sccm, and then the Si target source is turned on to plate a SiO2 film on the superhard film layer as a second bonding layer.

[0057] Step 6, coating an anti-fingerprint film layer: on the surface of the thin film obtained in step 5, an anti-fingerprint film layer is evaporated.

[0058] Preferably, an anti-fingerprint film layer is deposited on the second bonding layer by evaporation, and the anti-fingerprint solution is uniformly evaporated onto the film surface of the product by resistance heating.

[0059] The process parameters of the anti-fingerprint film evaporation are heating current 200-600A and film thickness 15-200nm. The semi-finished product is taken out after breaking the air and left to stand for 4 hours in an environment with a relative humidity of 40% to complete the coating.

[0060] Example 2

[0061] A method for manufacturing a functional film, comprising:

[0062] Step 1, substrate cleaning: select the substrate material, treat the surface, clean and dry it, and then coat it for use.

[0063] Preferably, tempered glass is selected and processed into a substrate of a required size. The surface of the substrate is first treated with plasma, then cleaned with a neutral detergent, rinsed with clean water and dried, and finally coated for use in the next process.

[0064] Step 2, coating an anti-reflection film layer: coating a SiO2 film, and an anti-reflection film layer composed of alternating and repeated Si3N4 films and SiON films on the substrate.

[0065] Step 2 includes:

[0066] Step 2.1, load the substrate into the chamber of the vacuum coating machine and start to evacuate the chamber. The vacuum range is 1.0×10 -4 ~1.0×10 -3 Pa, then introduce argon and oxygen, the argon flow rate is 100-400sccm, the oxygen flow rate is 100-500sccm, then turn on the Si target source, the target power is 8-14KW, the voltage is 200-600V, and SiO2 film is plated;

[0067] Step 2.2, maintaining the argon flow rate at 100-400 sccm, introducing oxygen and nitrogen, with the oxygen flow rate at 100-500 sccm and the nitrogen flow rate at 100-500 sccm, turning on the Si target source, and depositing a SiON film on the SiO2 film;

[0068] Step 2.3, turn off oxygen, introduce nitrogen, the nitrogen flow rate is 100-500 sccm, and deposit a Si3N4 film on the SiON film;

[0069] Step 2.4, repeat the process of step 2.2 and step 2.3 several times to form a film layer of SiON film and Si3N4 film repeated alternately.

[0070] The film structure of the SiON film and the Si3N4 film formed by alternating and repeating is SiON film-(Si3N4 film-SiON film) n , n>1.

[0071] Preferably, a film layer of “SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film” is finally formed.

[0072] Step 3, plating a SiO2 bonding layer: plating a SiO2 bonding layer on the surface of the anti-reflection film layer obtained in step 2.

[0073] Preferably, the nitrogen is turned off, and oxygen is introduced, with the process parameters of oxygen flow rate of 100-500sccm, target power of 6-12KW, and voltage of 200-600V, to deposit a SiO2 film on the anti-reflection film layer as the first bonding layer.

[0074] Step 4: Plating a superhard film layer: Plating a Si3N4 film and a CN on the surface of the SiO2 bonding layer obtained in step 3 x An ultra-hard film layer composed of alternating films.

[0075] Step 4 includes:

[0076] Step 4.1: Continuously evacuate the air with a vacuum range of 1.0×10 -4 ~1.0×10 -3 Pa, then introduce argon and nitrogen, with an argon flow rate of 100-400 sccm and a nitrogen flow rate of 100-500 sccm, turn on the Si target source, and deposit a Si3N4 film on the first bonding layer.

[0077] Step 4.2, maintain the argon flow rate at 100-400 sccm, introduce nitrogen, the nitrogen flow rate is 50-300 sccm, turn on the graphite target source, the current is 8-18A, and CN is plated on the Si3N4 film. x membrane.

[0078] Step 4.3, repeat the process of step 4.1 and step 4.2 to finally form Si3N4 film-CN x The membrane layers of the membrane combination.

[0079] Preferably, the obtained film structure is (Si3N4 film-CN x membrane) m , m≥1. For example, Si3N4 film-CN x membrane.

[0080] Step 5, re-plating a SiO2 bonding layer: on the surface of the superhard film layer obtained in step 4, re-plating a SiO2 bonding layer.

[0081] Preferably, the nitrogen and graphite target sources are turned off, oxygen is introduced, and the oxygen flow rate is 100-500 sccm, and then the Si target source is turned on to plate a SiO2 film on the superhard film layer as a second bonding layer.

[0082] Step 6, coating an anti-fingerprint film layer: on the surface of the thin film obtained in step 5, an anti-fingerprint film layer is evaporated.

[0083] Preferably, an anti-fingerprint film layer is deposited on the second bonding layer by evaporation, and the anti-fingerprint solution is uniformly evaporated onto the film surface of the product by resistance heating.

[0084] The process parameters of anti-fingerprint film evaporation are heating current 200-400A and film thickness 15-110nm. The semi-finished product is taken out after breaking the air and left to stand for 24 hours in an environment with a relative humidity of 60% to complete the coating.

[0085] Example 3

[0086] A method for manufacturing a functional film, comprising:

[0087] Step 1, substrate cleaning: select the substrate material, treat the surface, clean and dry it, and then coat it for use.

[0088] Preferably, glass is selected and processed into a substrate of a desired size. The surface of the substrate is first treated with plasma, then cleaned with a neutral detergent, rinsed with clean water, dried, and finally coated for use in the next process.

[0089] Step 2, coating an anti-reflection film layer: coating a SiO2 film, and an anti-reflection film layer composed of alternating and repeated Si3N4 films and SiON films on the substrate.

[0090] Step 2 includes:

[0091] Step 2.1, load the substrate into the chamber of the vacuum coating machine and start to evacuate the chamber. The vacuum range is 1.0×10 -3 ~2.0×10 -3Pa, then introduce argon and oxygen, the argon flow rate is 400-800sccm, the oxygen flow rate is 500-1000sccm, then turn on the Si target source, the target power is 14-20KW, the voltage is 600-1000V, and SiO2 film is plated;

[0092] Step 2.2, maintaining the argon flow rate at 400-800 sccm, introducing oxygen and nitrogen, with the oxygen flow rate at 500-1000 sccm and the nitrogen flow rate at 500-1000 sccm, turning on the Si target source, and depositing a SiON film on the SiO2 film;

[0093] Step 2.3, turn off oxygen, introduce nitrogen, the nitrogen flow rate is 500-1000 sccm, and deposit a Si3N4 film on the SiON film;

[0094] Step 2.4, repeat the process of step 2.2 and step 2.3 several times to form a film layer of SiON film and Si3N4 film repeated alternately.

[0095] The film structure of the SiON film and the Si3N4 film formed by alternating and repeating is SiON film-(Si3N4 film-SiON film) n , n>1.

[0096] Preferably, a film layer of “SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film-Si3N4 film-SiON film” is finally formed.

[0097] Step 3, plating a SiO2 bonding layer: plating a SiO2 bonding layer on the surface of the anti-reflection film layer obtained in step 2.

[0098] Preferably, the nitrogen is turned off and oxygen is introduced, and a SiO2 film is deposited on the anti-reflection film layer as the first bonding layer with process parameters of oxygen flow rate of 500-1000sccm, target power of 12-18KW, and voltage of 600-1000V.

[0099] Step 4: Plating a superhard film layer: Plating a Si3N4 film and a CN on the surface of the SiO2 bonding layer obtained in step 3 x An ultra-hard film layer composed of alternating films.

[0100] Step 4 includes:

[0101] Step 4.1: Continuously evacuate the air with a vacuum range of 1.0×10 -3 ~2.0×10 -3 Pa, then introduce argon and nitrogen, with an argon flow rate of 400-800sccm and a nitrogen flow rate of 500-1000sccm, turn on the Si target source, and deposit a Si3N4 film on the first bonding layer.

[0102] Step 4.2: Keep the argon flow rate at 400-800 sccm, introduce nitrogen, the nitrogen flow rate is 300-600 sccm, turn on the graphite target source, the current is 18-30A, and CN is plated on the Si3N4 film. x membrane.

[0103] Step 4.3, repeat the process of step 4.1 and step 4.2 to finally form Si3N4 film-CN x The membrane layers of the membrane combination.

[0104] Preferably, the obtained film structure is (Si3N4 film-CN x membrane) m , m≥1. For example, Si3N4 film-CN x Membrane-Si3N4 membrane-CN x Membrane-Si3N4 membrane-CN x membrane.

[0105] Step 5, re-plating a SiO2 bonding layer: on the surface of the superhard film layer obtained in step 4, re-plating a SiO2 bonding layer.

[0106] Preferably, the nitrogen and graphite target sources are turned off, oxygen is introduced, and the oxygen flow rate is 500-1000 sccm, and then the Si target source is turned on to plate a SiO2 film on the superhard film layer as a second bonding layer.

[0107] Step 6, coating an anti-fingerprint film layer: on the surface of the thin film obtained in step 5, an anti-fingerprint film layer is evaporated.

[0108] Preferably, an anti-fingerprint film layer is deposited on the second bonding layer by evaporation, and the anti-fingerprint solution is uniformly evaporated onto the film surface of the product by resistance heating.

[0109] The process parameters of the anti-fingerprint film evaporation are heating current 400-600A and film thickness 110-200nm. The semi-finished product is taken out after breaking the air and left to stand for 12 hours in an environment with a relative humidity of 50% to complete the coating.

[0110] Example 4

[0111] The method of Example 1 was used to manufacture a functional film.

[0112] The obtained functional film is covered with an anti-reflection film layer, a super-hard film layer and an anti-fingerprint film layer from the inside to the outside; a SiO2 film is also plated between the anti-reflection film layer and the super-hard layer; and a SiO2 film is also plated between the super-hard film layer and the anti-fingerprint film layer.

[0113] The anti-reflection film layer is formed by repeated coating of SiO2 film, Si3N4 film and SiON film from inside to outside.

[0114] The superhard film layers are Si3N4 film and CN from inside to outside. x A film system of two or more layers deposited in alternating combinations.

[0115] The substrate for attaching the functional film is made of any one of glass, tempered glass and microcrystalline glass, preferably microcrystalline glass. The substrate has the advantage of high light transmittance.

[0116] The thickness of the anti-reflection film is 200 to 3000 nm. The light transmittance is improved by controlling the thickness.

[0117] The super-hard film layer uses silicon nitride to improve the optical properties of the film layer, and uses the carbon nitride layer as a functional layer to enhance the hardness.

[0118] A SiO2 film is plated between the anti-reflection film and the super-hard layer as a bonding layer, which can improve the bonding force between the anti-reflection film and the super-hard layer, thereby improving the stability of the film and preventing it from falling off or sliding.

[0119] A SiO2 film is plated between the superhard film layer and the anti-fingerprint film layer as a bonding layer, which can improve the bonding force between the superhard layer and the anti-fingerprint film layer and enhance the wear resistance.

[0120] The functional film product obtained in Example 4 was subjected to performance testing, and the results are as follows.

[0121] 1. Hardness test:

[0122] Mohs hardness: 7.

[0123] Nanoindentation hardness (HIT): 19GPa.

[0124] Elastic modulus (EIT): 199 GPa.

[0125] 2. Abrasion resistance test:

[0126] Rubber friction resistance: After 8000 eraser cycle test, water drop angle ≥100°.

[0127] The manufacturing method of the functional film provided by the present invention mainly introduces a super-hard composite film layer between the anti-reflection film and the anti-fingerprint film. Through this process method, a functional film with high transmittance, low reflection and anti-fingerprint as well as high hardness and high wear resistance can be obtained, which can be widely used in the field of electronic products.

[0128] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A method for manufacturing a functional film, characterized in that: The method comprises: Step 1, substrate cleaning: select substrate material, treat the surface, clean and dry it, and then coat it for later use; Step 2, coating an anti-reflection film layer: coating a SiO2 film, and an anti-reflection film layer composed of a Si3N4 film and a SiON film alternately and repeatedly on the substrate; Step 3, plating a SiO2 bonding layer: plating a SiO2 bonding layer on the surface of the anti-reflection film layer obtained in step 2; Step 4: Plating a superhard film layer: Plating a Si3N4 film and a CN on the surface of the SiO2 bonding layer obtained in step 3 x Super hard film layer composed of alternating membranes; Step 5, re-plating a SiO2 bonding layer: re-plating a SiO2 bonding layer on the surface of the superhard film layer obtained in step 4; Step 6, coating an anti-fingerprint film layer: on the surface of the thin film obtained in step 5, an anti-fingerprint film layer is evaporated.

2. The method for manufacturing a functional film according to claim 1, wherein: The step 1 is to select any one of glass, tempered glass, and microcrystalline glass, and process it into a substrate of the required size. First, the surface of the substrate is treated with plasma, then cleaned with a neutral detergent, then rinsed with clean water and dried, and finally coated for use in the next process.

3. The method for manufacturing a functional film according to claim 1, wherein: The step 2 comprises: Step 2.1, load the substrate into the chamber of the vacuum coating machine and start to evacuate the chamber. The vacuum range is 1.0×10 -4 ~2.0×10 -3 Pa, then introduce argon and oxygen, the argon flow rate is 100-800sccm, the oxygen flow rate is 100-1000sccm, then turn on the Si target source, the target power is 8-20KW, the voltage is 200-1000V, and SiO2 film is plated; Step 2.2, maintaining the argon flow rate at 100-800 sccm, introducing oxygen and nitrogen, with the oxygen flow rate at 100-1000 sccm and the nitrogen flow rate at 100-1000 sccm, turning on the Si target source, and depositing a SiON film on the SiO2 film; Step 2.3, turn off oxygen, introduce nitrogen, the nitrogen flow rate is 100-1000 sccm, and deposit a Si3N4 film on the SiON film; Step 2.4, repeat the process of step 2.2 and step 2.3 several times to form a film layer of SiON film and Si3N4 film repeated alternately.

4. The method for manufacturing a functional film according to claim 3, wherein: In the step 2.4, the film structure of the SiON film and the Si3N4 film formed by alternating and repeating is SiON film-(Si3N4 film-SiON film). n , n>1.

5. The method for manufacturing a functional film according to claim 1, wherein: The step 3 is to turn off the nitrogen, introduce oxygen, and plate a SiO2 film on the anti-reflection film layer as the first bonding layer.

6. The method for manufacturing a functional film according to claim 5, wherein: In the step 3, SiO2 film is plated with the process parameters of oxygen flow rate of 100-1000sccm, target power of 6-18KW, and voltage of 200-1000V.

7. The method for manufacturing a functional film according to claim 1, wherein: The step 4 comprises: Step 4.1: Continuously evacuate the air with a vacuum range of 1.0×10 -4 ~2.0×10 -3 Pa, then introduce argon and nitrogen, with the argon flow rate of 100-800sccm and the nitrogen flow rate of 100-1000sccm, turn on the Si target source, and deposit a Si3N4 film on the first bonding layer; Step 4.2, maintain the argon flow rate at 100-800sccm, introduce nitrogen, the nitrogen flow rate is 50-600sccm, turn on the graphite target source, the current is 8-30A, and CN is plated on the Si3N4 film. x membrane; Step 4.3, repeat the process of step 4.1 and step 4.2 to finally form Si3N4 film-CN x The membrane layers of the membrane combination.

8. The method for manufacturing a functional film according to claim 1, wherein: The step 5 is to turn off the nitrogen and graphite target sources, introduce oxygen with an oxygen flow rate of 100 to 1000 sccm, and then turn on the Si target source to plate a SiO2 film on the superhard film layer as a second bonding layer.

9. The method for manufacturing a functional film according to claim 1, wherein: The step 6 is to plate an anti-fingerprint film layer on the second bonding layer by evaporation, and evaporate the anti-fingerprint solution evenly onto the film surface of the product by resistance heating.

10. The method for manufacturing a functional film according to claim 9, wherein: In step 6, the process parameters of the anti-fingerprint film evaporation are heating current 200-600A, film thickness 15-200nm, and the semi-finished product is taken out after breaking the air, and is left to stand for 4-24 hours in an environment with a relative humidity of 40%-60% to complete the coating.

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