Thin film-attached lead frame, method for manufacturing thin film-attached lead frame, and semiconductor device

Abstract

The invention provides a lead frame with a thin film, a method for manufacturing the lead frame with the thin film and a semiconductor device, wherein the lead frame with the thin film can obtain high flatness for the thin film. The film-attached lead frame includes a lead frame; the thin film is adhered to the lead frame, and the lead frame is provided with an annular frame part; and a plurality of lead portions extending from the frame portion toward the inside of the frame portion, each of the lead portions having a first portion and a connecting portion connected to the frame portion; a second portion connected to the first portion and farther from the connecting portion than the first portion; and a third portion connected to the second portion and farther from the connection portion than the second portion, the first portion having a first surface in contact with the film, the second portion having a second surface connected to the first surface and separated from the film, and the third portion having a third surface connected to the second surface and separated from the film. And the third surface is in contact with the thin film.

Description

Technical Field

[0001] The present disclosure relates to a lead frame with a film, a method for manufacturing the lead frame with a film, and a semiconductor device. Background Art

[0002] Lead frames are used in the manufacture of semiconductor devices such as QFN (quad flat non-leaded package). In particular, in a diced QFN, when the semiconductor element and the lead frame are sealed with a sealing resin, a film (sealing tape) is attached to the back of the lead frame to prevent the sealing resin from leaking to the back of the lead frame. In addition, the back of the lead frame is partially half-etched, and the half-etched portion is sealed with the sealing resin from the back side.

[0003] <Prior Art Literature>

[0004] <Patent Documents>

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-294443

[0006] Patent Document 2: Japanese Patent Application Publication No. 2000-012758 Summary of the invention

[0007] <Problems to be Solved by the Invention>

[0008] In a conventional lead frame with a film attached (a lead frame with a film attached), if the back side of the lead frame is half-etched to a large extent, the tension acting on the film is likely to weaken, and the flatness of the film will decrease. If the flatness of the film decreases, wrinkles may sometimes be generated on the film, or the film may be attached to the half-etched portion of the lead frame. In addition, if the flatness of the film decreases, the sealing performance in a semiconductor device such as a QFN may sometimes decrease.

[0009] An object of the present disclosure is to provide a lead frame with a thin film, a method for manufacturing the lead frame with a thin film, and a semiconductor device that can obtain high flatness for a thin film.

[0010] <Methods used to solve the problem>

[0011] According to one embodiment of the present disclosure, a lead frame with an attached film is provided, comprising: a lead frame; and a film adhered to the lead frame, the lead frame having an annular frame portion; and a plurality of lead portions extending from the frame portion toward the inner side of the frame portion, the lead portions each having a first portion having a connecting portion connected to the frame portion; a second portion connected to the first portion and further away from the connecting portion than the first portion; and a third portion connected to the second portion and further away from the connecting portion than the second portion, the first portion having a first surface in contact with the film, the second portion having a second surface connected to the first surface and separated from the film, and the third portion having a third surface connected to the second surface and in contact with the film.

[0012] <Effects of the Invention>

[0013] According to the disclosed technology, higher flatness can be obtained for a thin film. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a diagram showing an outline of a lead frame in the lead frame with film according to the first embodiment.

[0015] Figure 2 It is shown in an enlarged manner Figure 1 A portion of the diagram.

[0016] Figure 3 This is a cross-sectional view (part 1) showing a method for manufacturing a lead frame with a film according to a first embodiment.

[0017] Figure 4 This is a cross-sectional view (part 2) showing the method for manufacturing the lead frame with film according to the first embodiment.

[0018] Figure 5 This is a cross-sectional view (part 1) showing a method for manufacturing a semiconductor device using the lead frame with a film according to the first embodiment.

[0019] Figure 6 This is a cross-sectional view (part 2) showing a method for manufacturing a semiconductor device using the lead frame with a film according to the first embodiment.

[0020] Figure 7 It is a plan view showing a method of manufacturing a semiconductor device using the lead frame with film according to the first embodiment.

[0021] Figure 8 This is a bottom view showing a semiconductor device manufactured using the lead frame with film according to the first embodiment.

[0022] Fig. 91 is a cross-sectional view showing a lead frame with a film according to a reference example.

[0023] Fig.10 It is a cross-sectional view showing a process in the middle of a method for manufacturing a semiconductor device using a lead frame with a film according to a reference example.

[0024] Fig.11 It is a cross-sectional view showing a method for manufacturing a semiconductor device using the lead frame with a film according to the second embodiment.

[0025] Fig.12 The diagrams are a top view and a bottom view showing a lead frame with a film according to a third embodiment.

[0026] Fig.13 It is a cross-sectional view showing a lead frame with a film according to a third embodiment.

[0027] Fig.14 The diagrams are a top view and a bottom view showing a semiconductor device manufactured using the lead frame with a film according to the third embodiment.

[0028] Fig.15 This is a cross-sectional view showing a semiconductor device manufactured using the lead frame with film according to the third embodiment.

[0029] Explanation of symbols

[0030] 1. 3 lead frame

[0031] 5 films

[0032] 10. Frame

[0033] 10A, 21A, 22A, 23A, 31A one side

[0034] 10B, 21B, 22B, 23B, 31B another side

[0035] 11 yuan

[0036] 12 circle area

[0037] 15 Connection

[0038] 18 cutting knife

[0039] 20 Lead wire

[0040] 21 Part 1

[0041] 21C end face

[0042] 22 Part 2

[0043] 23 Part 3

[0044] 31 Wafer pad

[0045] 80 Sealing Resin

[0046] 80A, 150A, 250A, 350A, 360A one main surface

[0047] 80B, 150B, 250B, 350B, 360B another main surface

[0048] 80C side

[0049] 100, 200, 300 lead frame with film

[0050] 120, 220, 320 semiconductor devices

[0051] 150, 250, 350, 360 semiconductor components DETAILED DESCRIPTION

[0052] Hereinafter, with reference to the accompanying drawings, the implementation mode will be described in detail. It should be noted that in this specification and the accompanying drawings, for components having substantially the same functional structure, the same symbols are sometimes assigned to omit repeated descriptions. In the following description, the XYZ rectangular coordinate system is used, and when observed from any point, the +Z side is sometimes referred to as the top, the upper side or the top, and the -Z side is sometimes referred to as the bottom, the lower side or the bottom. In addition, the surface on the lower side is sometimes referred to as one surface or the bottom, and the surface on the upper side is sometimes referred to as another surface or the top. However, this coordinate system is specified for the purpose of explanation, and there is no limitation on the posture of the lead frame and the semiconductor device with the film. The lead frame and the semiconductor device can be used in an upside-down state, or can be arranged at any angle. In addition, a plan view refers to a view of an object observed from the normal direction of one surface of a lead frame or a semiconductor device, and a planar shape refers to a shape obtained by observing the object from the normal direction of one surface of a lead frame or a semiconductor device.

[0053] (First embodiment)

[0054] First, a first embodiment will be described. The first embodiment relates to a lead frame with a film.

[0055] [Structure of lead frame with film]

[0056] The structure of the lead frame with film according to the first embodiment will be described. Figure 1 This is a diagram showing an outline of a lead frame in the lead frame with film according to the first embodiment. Figure 2 It is shown in an enlarged manner Figure 1 A portion of the diagram. Figure 2 (a) is a bottom view, Figure 2 (b) is equivalent to along Figure 2 Cross-sectional view along line IIb-IIb in (a).

[0057] like Figure 2 As shown in (b), the lead frame 100 with film according to the first embodiment includes a lead frame 1 and a film 5 adhered to the lead frame 1. The lead frame 1 is a lead frame of a semiconductor device on which a semiconductor element is mounted and covered with a sealing resin. The film 5 is adhered to the bottom (one surface) of the lead frame 1. Figure 2 The film 5 is omitted in (a).

[0058] like Figure 1 As shown, the lead frame 1 has a plurality of singulation regions 110. For example, the singulation regions 110 have a rectangular planar shape. Figure 2 One of the singulation areas 110 is shown. Each singulation area 110 has an annular frame portion 10 and a plurality of lead portions 20. The frame portion 10 is shared between two adjacent singulation areas 110. Each lead portion 20 extends from the frame portion 10 to the inside of the frame portion 10. The frame portion 10 is formed in a rectangular shape, and a plurality of lead portions 20 extend from the four sides of the frame portion 10 to the inside of the frame portion 10, respectively. As a material for the lead frame 1, for example, copper (Cu), Cu alloy, 42 alloy, etc. can be used. The thickness of the lead frame 1 can be, for example, about 100μm to 300μm. The lead frame 1 may not have a chip pad.

[0059] The frame 10 has a surface 10A (lower surface) and another surface 10B (upper surface) located on the opposite side of the surface 10A. A portion of the surface 10A may be in contact with the film 5. The portion of the surface 10A in contact with the film 5 may be parallel to the XY plane. The surface 10A may be completely separated from the film 5. A portion or all of the remaining portion of the surface 10A (the portion not in contact with the film 5) may be a concave surface. For example, Figure 2 As shown in (b), one surface 10A of the frame portion 10 may have a portion in contact with the film 5 and a portion separated from the film 5 (i.e., a portion not in contact with the film 5). The thickness of the frame portion 10 at the portion of the one surface 10A separated from the film 5 is thinner than the thickness of the portion of the lead portion 20 having a surface in contact with the film 5 (e.g., the first portion 21 and the third portion 23 described later). The other surface 10B may be parallel to the XY plane.

[0060] The lead portion 20 includes a first portion 21, a second portion 22, and a third portion 23. The first portion 21 includes a connection portion 15 connected to the frame portion 10. The second portion 22 is connected to the first portion 21 and is farther from the connection portion 15 than the first portion 21. The third portion 23 is connected to the second portion 22 and is farther from the connection portion 15 than the second portion 22.

[0061] The first portion 21 has one surface 21A (lower surface) and another surface 21B (upper surface) located on the opposite side to the one surface 21A. The one surface 21A contacts the film 5. The one surface 21A is connected to the one surface 10A, and the other surface 21B is connected to the other surface 10B.

[0062] The second portion 22 has one surface 22A (lower surface) and another surface 22B (upper surface) located on the opposite side of the one surface 22A. The one surface 22A is connected to the one surface 21A, and the other surface 22B is connected to the other surface 21B. The one surface 22A is separated from the film 5. A part or all of the one surface 22A may be a concave surface.

[0063] The third portion 23 has one surface 23A (lower surface) and another surface 23B (upper surface) located on the opposite side of the one surface 23A. The one surface 23A is connected to the one surface 22A, and the other surface 23B is connected to the other surface 22B. The one surface 23A is in contact with the film 5.

[0064] One face 21A and one face 23A are flush with each other. One face 21A and one face 23A may be parallel to the XY plane. Another face 10B, another face 21B, another face 22B, and another face 23B are flush with each other. Another face 10B, another face 21B, another face 22B, and another face 23B may be parallel to the XY plane. The portion of one face 10A in contact with the film 5 may be flush with one face 21A and one face 23A, and may be parallel to the XY plane. One face 21A is an example of a first face, one face 22A is an example of a second face, and one face 23A is an example of a third face.

[0065] The lead frame 1 may further include a plating layer 91 on a part of the other surface 21B, the other surface 22B, and the other surface 23B of the lead portion 20. The plating layer 91 is used for connection of bonding wires and may include, for example, a silver (Ag) plating layer.

[0066] The film 5 has, for example, polyimide as a base material, and is bonded to the lead frame 1 using a silicone adhesive or the like. The film 5 is sometimes referred to as a sealing tape.

[0067] [Method for manufacturing lead frame with film]

[0068] Next, a method for manufacturing the lead frame with film 100 according to the first embodiment will be described. Figure 3-4 It is a cross-sectional view showing the method of manufacturing the lead frame with film according to the first embodiment.

[0069] First, if Figure 3As shown in (a), a metal plate 101 of a predetermined shape is prepared. The metal plate 101 is a component that is cut and singulated according to each singulation area 110. As a material of the metal plate 101, copper, copper alloy, 42 alloy, etc. can be used. The thickness of the metal plate 101 can be, for example, about 100 μm to 300 μm.

[0070] Then, if Figure 3 As shown in (b), a photosensitive resist 72 is formed on one surface 101A of the metal plate 101, and a photosensitive resist 71 is formed on the other surface 101B of the metal plate 101. The resists 71 and 72 can be formed, for example, by coating and drying a resist liquid, or by pasting a resist film. As the resists 71 and 72, for example, a dry film resist such as epoxy resin or acrylic resin or an electrodeposition resist can be used.

[0071] Then, if Figure 3 As shown in (c), by exposing and developing the resist 71, a cover pattern 71S and an opening 71T are formed on the resist 71, and by exposing and developing the resist 72, a cover pattern 72S and an opening 72T are formed on the resist 72.

[0072] The cover pattern 71S is a portion for forming the frame portion 10 and the lead portion 20 on the metal plate 101, and covers a portion of the other surface 101B of the metal plate 101 where the other surface 10B, 21B, 22B, and 23B of the lead frame 1 are to be formed. The opening portion 71T is a portion for forming an opening portion in the metal plate 101, and the remaining portion of the other surface 101B of the metal plate 101 is exposed from the opening portion 71T.

[0073] The cover pattern 72S is a portion for forming a part of the frame portion 10 and the first portion 21 and the third portion 23 of the lead portion 20 on the metal plate 101, and covers a portion of one surface 101A of the metal plate 101 that is to form a part of one surface 10A of the lead frame 1 and a portion where one surface 21A and 23A are to be formed. The opening portion 72T is a portion for forming the remaining portion of the frame portion 10, the second portion 22 of the lead portion 20, and the opening portion on the metal plate 101, and the remaining portion of the one surface 101A of the metal plate 101 is exposed from the opening portion 72T.

[0074] Then, if Figure 4As shown in (a), the metal plate 101 is half-etched (e.g., wet-etched) from one surface 101A side and the other surface 101B side of the metal plate 101 using the resists 71 and 72 as etching masks. In the case where the metal plate 101 is copper, an aqueous solution of ferric chloride or cupric chloride, for example, can be used in the half etching of the metal plate 101. As a result of the half etching of the metal plate 101, the lead frame 1 having the frame portion 10 and the lead portion 20 is formed from the metal plate 101. After the half etching of the metal plate 101, the resists 71 and 72 are removed. The resists 71 and 72 can be stripped, for example, by a stripping solution.

[0075] Then, if Figure 4 As shown in (b) of FIG. 1 , the film 5 is attached to the lead frame 1. The film 5 is attached to the lead frame 1 so as to be in contact with the one surface 21A and the one surface 23A.

[0076] In this way, the lead frame 100 with a film can be manufactured.

[0077] It should be noted that before pasting the film 5, Figure 4 As shown in (b) of FIG. 1 , a plating layer 91 may be formed on the lead frame 1. The plating layer 91 may be formed, for example, by an electrolytic plating method using the lead frame 1 as a power supply path.

[0078] [Method for manufacturing semiconductor device]

[0079] Next, a method for manufacturing a semiconductor device using the lead frame with film 100 according to the first embodiment will be described. Figure 5-6 It is a cross-sectional view showing a method of manufacturing a semiconductor device using the lead frame with film 100 according to the first embodiment. Figure 7 It is a plan view showing a method of manufacturing a semiconductor device using the lead frame with film 100 according to the first embodiment.

[0080] First, if Figure 5 (a) and Figure 7 As shown in (a), the lead frame 100 with film according to the first embodiment is prepared, and a semiconductor element 150 is mounted on the upper surface of the lead portion 20 in each singulation region 110. The semiconductor element 150 has a base 151 and a plurality of electrodes 152 provided on the upper surface of the base 151. At this time, the upper surface of the lead portion 20 and the lower surface of the base 151 are bonded by an adhesive 155. As the adhesive 155, a wafer bonding film, silver paste, solder, etc. can be used. The semiconductor element 150 is an example of an electronic component.

[0081] Then, if Figure 5 As shown in (b) , the plating layer 91 and the electrode 152 are electrically connected by a bonding wire 92 .

[0082] Then, if Figure 5 (c) and Figure 7 As shown in (b), the semiconductor element 150 and the bonding wire 92 are sealed by the sealing resin 80. At this time, the semiconductor element 150 and the bonding wire 92 are sealed by a single sealing resin 80 common to the plurality of singulation regions 110. The top and side surfaces of the lead frame 1 are also sealed by the sealing resin 80. In addition, the sealing resin 80 is also filled between one surface 22A of the second portion 22 of the lead portion 20 and the film 5. In addition, the sealing resin 80 is also filled between a portion of one surface 10A of the frame portion 10 and the film 5. On the other hand, since one surface 21A of the first portion 21 of the lead portion 20 and one surface 23A of the third portion 23 are in contact with the film 5, the sealing resin 80 is not filled between one surface 21A of the first portion 21 and one surface 23A of the third portion 23 and the film 5. As the sealing resin 80, for example, a so-called molding resin containing a filler in an epoxy resin can be used. The sealing resin 80 can be formed, for example, by transfer molding or compression molding. The sealing resin 80 has a main surface 80A (lower surface) and another main surface 80B (upper surface) located on the opposite side of the main surface 80A. The main surface 80A can be flush with the portion of the surface 10A that contacts the film 5, the surface 21A, and the surface 23A. The main surface 80A and the other main surface 80B can be parallel to the XY plane.

[0083] Then, if Figure 6 As shown in (a) of FIG. 8 , the film 5 is peeled off from the lead frame 1 and the sealing resin 80 .

[0084] Then, if Figure 6 As shown in (b), the first portion 21 of the lead portion 20 is cut using, for example, a dicing blade 18. At this time, the portion covering the first portion 21 of the sealing resin 80 is also cut. Thus, the frame portion 10 is removed from the lead portion 20.

[0085] As a result of the cut-off, Figure 6 As shown in (c), a semiconductor device 120 is obtained. Figure 8 This is a bottom view showing a semiconductor device manufactured using the lead frame with film according to the first embodiment. Figure 6 (c) is equivalent to along Figure 8 Cross-sectional view of line VIc-VIc in FIG.

[0086] like Figure 6 (c) and Figure 8As shown, the semiconductor device 120 includes a semiconductor element 150, a plurality of lead portions 20, and a sealing resin 80. The semiconductor element 150 is electrically connected to the plurality of lead portions 20 via bonding wires 92. The sealing resin 80 seals the semiconductor element 150 and the bonding wires 92. The sealing resin 80 includes a main surface 80A (lower surface), another main surface 80B (upper surface) located on the opposite side of the main surface 80A, and a side surface 80C connecting the main surface 80A to the other main surface 80B. The first portion 21 of the lead portion 20 includes an end surface 21C exposed from the side surface 80C of the sealing resin 80. A surface 21A of the first portion 21 and a surface 23A of the third portion 23 are exposed from a main surface 80A of the sealing resin 80. The main surface 80A is an example of a first main surface, and the other main surface 80B is an example of a second main surface.

[0087] In addition, the semiconductor element 150 has one main surface 150A and another main surface 150B located on the opposite side of the one main surface 150A. The one main surface 150A is bonded to the lead portion 20, and the other main surface 150B is provided with an electrode 152. At least a portion of the one main surface 150A and at least a portion of the other main surface 150B are covered with a sealing resin 80. The one main surface 150A is an example of a third main surface, and the other main surface 150B is an example of a fourth main surface.

[0088] As described above, in the lead frame 100 with film according to the first embodiment, the lead portion 20 includes the first portion 21, the second portion 22, and the third portion 23, and not only the one surface 21A of the first portion 21 but also the one surface 23A of the third portion 23 is in contact with the film 5. Therefore, the film 5 can be attached to the lead frame 1 with high flatness.

[0089] Here, for comparison, a reference example will be described. Fig. 9 1 is a cross-sectional view showing a lead frame with a film according to a reference example. Fig.10 It is a cross-sectional view showing a process in the middle of a method for manufacturing a semiconductor device using a lead frame with a film according to a reference example.

[0090] The lead frame 100X with a film according to the reference example is different from the first embodiment mainly in that the lead portion 20 does not include the third portion 23, and the second portion 22 extends to the position of the third portion 23 in the first embodiment. When manufacturing the lead frame 100X with a film, in each singulation region 110, the film 5 is not supported in the region surrounded by one surface 21A of the plurality of first portions 21, and the flatness of the film 5 is likely to be reduced. Therefore, Fig. 9 As shown in (a), wrinkles may sometimes be generated on the film 5, or Fig. 9As shown in (b) of FIG. 1 , the film 5 may sometimes be attached to one surface 22A of the second portion 22 .

[0091] When a semiconductor device is manufactured using the lead frame 100X with a film, if wrinkles are generated on the film 5, Fig.10 As shown in (a), wrinkle-like concavities and convexities may be formed on one main surface 80A of the sealing resin 80. In addition, when the film 5 is attached to one surface 22A of the second part 22, as shown in Fig.10 As shown in (b) of FIG. 1 , a portion that is not covered by the sealing resin 80 and is exposed from the sealing resin 80 is formed on one surface 22A of the second portion 22 .

[0092] On the other hand, in the present embodiment, since not only the one surface 21A of the first portion 21 but also the one surface 23A of the third portion 23 is in contact with the film 5, it is possible to obtain a high flatness for the film 5. Therefore, the generation of wrinkles and the exposure of the one surface 22A of the second portion 22 from the sealing resin 80, which occur in the reference example, can be suppressed.

[0093] It should be noted that according to the experiment conducted by the inventor of the present application, it has been determined that if in a plane view perpendicular to a surface 21A of the first portion 21, an arbitrary circle 11 (see Figure 2 ), at least a portion of one surface 21A of the first portion 21 or one surface 23A of the third portion 23 is present on the inner side of the frame portion 10, excellent flatness can be obtained for the film 5. Therefore, it is preferred that at least a portion of one surface 21A of the first portion 21 or one surface 23A of the third portion 23 is present on the inner side of an arbitrary circle 11 with a diameter of 1.5 mm located on the inner side of the frame portion 10.

[0094] (Second embodiment)

[0095] Next, the second embodiment will be described. The second embodiment is different from the first embodiment mainly in that a semiconductor element is flip-chip mounted on a lead frame with a film. Fig.11 It is a cross-sectional view showing a method for manufacturing a semiconductor device using the lead frame with a film according to the second embodiment.

[0096] First, if Fig.11 As shown in (a), a lead frame 200 with a film according to the second embodiment is prepared. The lead frame 200 with a film does not have a plating layer 91 for bonding wires 92. The other structures of the lead frame 200 with a film may be the same as those of the first embodiment, but the arrangement of the plurality of lead portions 20 may be different from that of the first embodiment.

[0097] After the lead frame 200 with a film is prepared, a semiconductor element 250 is flip-chip mounted on the upper surface of the lead portion 20 in each singulation region 110. The semiconductor element 250 has a base 251 and a plurality of electrodes 252 provided on the lower surface of the base 251. At this time, the upper surface of the lead portion 20 and the electrodes 252 are bonded by a conductive adhesive 93. As the conductive adhesive 93, solder or the like can be used. It should be noted that a silver plating layer may be provided at the bonding portion between the lead frame 200 with a film and the semiconductor element 250. The semiconductor element 250 is an example of an electronic component.

[0098] Then, if Fig.11 As shown in (b) of FIG. 1 , the semiconductor element 250 is sealed with a sealing resin 80 . At this time, in the plurality of singulation regions 110 , the semiconductor element 250 is sealed with a single sealing resin 80 .

[0099] Next, the film 5 is peeled off and the first portion 21 of the lead portion 20 is cut in the same manner as in the first embodiment. Thus, the frame portion 10 is removed from the lead portion 20. Fig.11 As shown in (c), a semiconductor device 220 is obtained.

[0100] The semiconductor element 250 has one main surface 250A and another main surface 250B located on the opposite side to the one main surface 250A. The one main surface 250A is bonded to the lead portion 20. At least a portion of the one main surface 250A and at least a portion of the other main surface 250B are covered with a sealing resin 80. The entirety of the other main surface 250B may be covered with a sealing resin 80. The one main surface 250A is an example of a third main surface, and the other main surface 250B is an example of a fourth main surface.

[0101] The second embodiment can also provide the same effects as those of the first embodiment.

[0102] (Third embodiment)

[0103] Next, a third embodiment will be described. The third embodiment is different from the first embodiment mainly in the structure of a lead frame.

[0104] [Structure of lead frame with film]

[0105] The structure of the lead frame with film according to the third embodiment will be described. Fig.12 The diagrams are a top view and a bottom view showing a lead frame with a film according to a third embodiment. Fig.12 (a) is a top view, Fig.12 (b) is a bottom view. Fig.13It is a cross-sectional view showing a lead frame with a film according to a third embodiment. Fig.13 (a) is equivalent to along Fig.12 The cross-sectional view of line XIIIa-XIIIa in Fig.13 (b) is equivalent to along Fig.12 Cross-sectional view along line XIIIb-XIIIb in FIG. Fig.12 and Fig.13 One of the singulation regions 110 is shown.

[0106] The lead frame 300 with film according to the third embodiment includes a lead frame 3 and a film 5 attached to the lead frame 3. The lead frame 3 is a lead frame of a semiconductor device on which two semiconductor elements are mounted and which is covered with a sealing resin. The film 5 is attached to the lower surface (one surface) of the lead frame 3. Fig.12 In (b), the film 5 is omitted.

[0107] Each singulation region 110 includes an annular frame portion 10, a plurality of lead portions 20, a wafer pad portion 31, and a plurality of support portions 32. The frame portion 10 is shared between two adjacent singulation regions 110. Each lead portion 20 extends from the frame portion 10 toward the inside of the frame portion 10. The frame portion 10 is formed in a rectangular shape, and the plurality of lead portions 20 extend from the four sides of the frame portion 10 toward the inside of the frame portion 10. The wafer pad portion 31 is supported on the frame portion 10 by the plurality of support portions 32.

[0108] The support portion 32 has one surface 32A (lower surface) and another surface 32B (upper surface) located on the opposite side of the one surface 32A. The one surface 32A is connected to the one surface 10A of the frame portion 10, and the other surface 32B is connected to the other surface 10B of the frame portion 10. The one surface 10A and the one surface 32A can be separated from the film 5.

[0109] The wafer pad 31 has one surface 31A (lower surface) and another surface 31B (upper surface) located on the opposite side of the one surface 31A. The one surface 31A is connected to the one surface 32A, and the other surface 31B is connected to the other surface 32B. At least a part of the one surface 31A is in contact with the film 5.

[0110] The portion of one face 31A in contact with the film 5 may be flush with one face 21A and one face 23A, and may be parallel to the XY plane. Another face 31B and another face 32B may be flush with another face 10B, another face 21B, another face 22B, and another face 23B, and may be parallel to the XY plane. One face 31A is an example of the fourth face, and another face 31B is an example of the fifth face.

[0111] The lead frame 3 may further include a plating layer 91 on a portion of the other surfaces 21B, 22B, and 23B of a portion of the lead portion 20 among the plurality of lead portions 20, and a plating layer 94 on a portion of the other surfaces 21B, 22B, and 23B of another portion of the lead portion 20. The plating layer 91 is used for connection of bonding wires. The plating layer 94 is used for flip-chip mounting. The plating layers 91 and 94 may include, for example, a silver plating layer. A portion of the plurality of lead portions 20 provided with the plating layer 91 may not include the third portion 23.

[0112] The other structures of the third embodiment are the same as those of the first embodiment.

[0113] [Method for manufacturing lead frame with film]

[0114] The lead frame with a thin film 300 according to the third embodiment can be manufactured by the same method as that of the first embodiment by changing the pattern formed on the resist 71 and the pattern formed on the resist 72 .

[0115] [Structure of semiconductor device]

[0116] Next, the structure of a semiconductor device manufactured using the lead frame with film 300 according to the third embodiment will be described. Fig.14 The diagrams are a top view and a bottom view showing a semiconductor device manufactured using the lead frame with a film according to the third embodiment. Fig.14 (a) is a top view, Fig.14 (b) is a bottom view. Fig.15 This is a cross-sectional view showing a semiconductor device manufactured using the lead frame with film according to the third embodiment. Fig.15 (a) is equivalent to along Fig.14 The cross-sectional view of the XVa-XVa line in Fig.15 (b) is equivalent to along Fig.14 The cross-sectional view of the XVb-XVb line in Fig.14 In (a), the sealing resin 80 is seen through, and the portion blocked by the sealing resin 80 is also indicated by a solid line.

[0117] In the semiconductor device 320 manufactured using the lead frame 300 with film according to the third embodiment, a semiconductor element 350 is mounted on a wafer pad 31. The semiconductor element 350 has a base 351 and a plurality of electrodes 352 provided on the upper surface of the base 351. The other surface 31B of the wafer pad 31 and the lower surface of the base 351 are bonded by an adhesive 355. In other words, the semiconductor element 350 is mounted on the other surface 31B of the wafer pad 31. As the adhesive 355, a wafer bonding film, silver paste, solder, etc. can be used. The plating layer 91 and the electrode 352 are electrically connected by a bonding wire 92. The semiconductor element 350 is an example of an electronic component.

[0118] In addition, a semiconductor element 360 is flip-chip mounted on the upper surface of the lead portion 20 provided with the plating layer 94. The semiconductor element 360 includes a base portion 361 and a plurality of electrodes 362 provided on the lower surface of the base portion 361. The upper surface of the lead portion 20 and the electrodes 362 are bonded via the plating layer 94. It should be noted that the electrodes 362 and the plating layer 94 may be bonded via a conductive adhesive such as solder. The semiconductor element 360 is an example of an electronic component.

[0119] The semiconductor element 350 has one main surface 350A and another main surface 350B located on the opposite side of the one main surface 350A. The one main surface 350A is bonded to the wafer pad 31. In the present embodiment, at least a portion of the other main surface 350B is covered with a sealing resin 80. The one main surface 350A is an example of a third main surface, and the other main surface 350B is an example of a fourth main surface.

[0120] The semiconductor element 360 has one main surface 360A and another main surface 360B located on the opposite side to the one main surface 360A. The one main surface 360A is bonded to the lead portion 20. At least a portion of the one main surface 360A and at least a portion of the other main surface 360B are covered with a sealing resin 80. The entirety of the other main surface 360B may be covered with a sealing resin 80. The one main surface 360A is an example of a third main surface, and the other main surface 360B is an example of a fourth main surface.

[0121] The other structures of the semiconductor device 320 are the same as those of the semiconductor device 120 .

[0122] The third embodiment can also achieve the same effects as those of the first embodiment. Since the lead frame 300 with a film includes the die pad 31, it is easy to obtain high flatness for the film 5 around the die pad 31. On the other hand, when the lead 20 does not include the third portion 23 near the lead 20 on which the semiconductor element 350 is mounted, as shown in the above-mentioned reference example, the flatness of the film 5 may be reduced. In this embodiment, since the lead 20 on which the semiconductor element 350 is mounted has the third portion 23, it is possible to obtain high flatness for the film 5.

[0123] It should be noted that, similarly to the first embodiment, it is preferred that at least a portion of one surface 21A of the first portion 21 or one surface 23A of the third portion 23 exists inside any circle 11 having a diameter of 1.5 mm located inside the frame portion 10. In addition, in a plan view perpendicular to the one surface 21A, a circular region 12 having a diameter of 1.5 mm may exist, inside which the one surface 21A of the first portion 21 and the one surface 31A of the wafer pad portion 31 do not exist, and at least a portion of one surface 23A of the third portion 23 exists.

[0124] Alternatively, instead of the semiconductor element 350 or 360 , a passive element such as a capacitor may be used as the electronic element.

[0125] Although preferred embodiments and the like have been described in detail above, the present disclosure is not limited to the above embodiments and the like, and various modifications and substitutions may be made to the above embodiments and the like without departing from the scope described in the claims.

Claims

1. A lead frame with a film, comprising: lead frame; and A film is attached to the lead frame. The lead frame has An annular frame; as well as A plurality of lead portions extend from the frame portion toward the inner side of the frame portion, The lead portions each have A first part having a connecting portion connected to the frame portion; a second portion connected to the first portion and further away from the connecting portion than the first portion; as well as a third portion connected to the second portion and further away from the connecting portion than the second portion; The first portion has a first surface in contact with the film, The second portion has a second surface connected to the first surface and separated from the film, and the third portion has a third surface connected to the second surface and in contact with the film.

2. The lead frame with film according to claim 1, wherein: In a plane view perpendicular to the first surface, At least a part of the first surface or the third surface exists inside an arbitrary circle having a diameter of 1.5 mm located inside the frame portion.

3. The lead frame with a film according to claim 1 or 2, comprising: The wafer pad is arranged inside the frame. The wafer pad has a fourth surface in contact with the film.

4. The lead frame with film according to claim 3, wherein: In a plane view perpendicular to the first surface, There is a circular area with a diameter of 1.5 mm, inside which the first surface and the fourth surface do not exist and at least a part of the third surface exists.

5. The lead frame with film according to claim 1 or 2, wherein: The frame has a surface separated from the film, The thickness of the frame portion at a surface separated from the film is thinner than the thicknesses of the first portion and the third portion.

6. The lead frame with film according to claim 1 or 2, wherein: The first surface and the third surface are flush with each other.

7. A method for manufacturing a lead frame with a film, comprising: A process of forming a lead frame; and a step of attaching a film to the lead frame, The lead frame has An annular frame; as well as A plurality of lead portions extend from the frame portion toward the inner side of the frame portion, The lead portions each have A first part having a connecting portion connected to the frame portion; a second portion connected to the first portion and further away from the connecting portion than the first portion; as well as a third portion connected to the second portion and further away from the connecting portion than the second portion; The first portion has a first surface in contact with the film, The second portion has a second surface connected to the first surface and separated from the film, and the third portion has a third surface connected to the second surface and in contact with the film.

8. A semiconductor device comprising: a plurality of lead portions; an electronic component electrically connected to the plurality of lead portions; and a sealing resin that seals the lead portion and the electronic component, The sealing resin has first main surface; a second main surface, located on a side opposite to the first main surface; as well as side, connecting the first main surface with the second main surface, The lead portions each have A first portion having an end surface exposed from the side surface of the sealing resin; a second portion connected to the first portion and further away from the end surface than the first portion; as well as a third portion connected to the second portion and further away from the end surface than the second portion; The first portion has a first surface exposed from the first main surface, The second portion has a second surface connected to the first surface and covered by the sealing resin, the third portion has a third surface connected to the second surface and exposed from the first main surface, and the electronic component has a third main surface covered by the sealing resin; as well as The fourth main surface is located on the opposite side to the third main surface and is covered with the sealing resin.

9. The semiconductor device according to claim 8, wherein: In a plane view perpendicular to the first surface, At least a portion of the first surface or the third surface exists inside any circle having a diameter of 1.5 mm and located inside the side surface.

10. The semiconductor device according to claim 8 or 9, comprising: A wafer pad is disposed on the inner side of the side surface, The wafer pad has a fourth surface, exposed from the first main surface; and a fifth side, located on the side opposite to the fourth side, The electronic component is mounted on the fifth surface.

11. The semiconductor device according to claim 10, wherein In a plane view perpendicular to the first surface, There is a circular area with a diameter of 1.5 mm, inside which the first surface and the fourth surface do not exist and at least a part of the third surface exists.

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