Monitoring and adjusting mode of CMP processing temperature

Abstract

The invention relates to a CMP (chemical mechanical polishing) processing temperature monitoring and adjusting mode, which belongs to the technical field of CMP processing technology, and comprises the following operation steps: 1, when a wafer silicon wafer is subjected to CMP processing on polishing equipment, a processed polishing solution enters a liquid storage assembly through a liquid outlet tank and a liquid storage tank by inertia; and secondly, the polishing solution flows into a liquid storage tank through a contact type temperature sensor, and the CMP machining temperature is monitored in real time through the contact type temperature sensor at the moment. And thirdly, the temperature of the liquid supply system is adjusted according to the temperature monitoring value of the contact type temperature sensor on the polishing liquid. 4, when the contact type temperature sensor monitors that the temperature is reduced, the temperature of the liquid supply system is adjusted to increase the temperature for supply; and when the contact type temperature sensor monitors that the temperature is ultrahigh, the temperature of the liquid supply system is adjusted and cooled for supply. The device has the advantages of compact structure and good operation stability. And through CMP temperature monitoring and adjustment, process adjustment is met, and the production quality and stability of products are improved.

Description

Technical Field

[0001] The invention relates to the technical field of CMP processing technology, and in particular to a monitoring and regulating method for CMP processing temperature. Background Art

[0002] CMP is the abbreviation of chemical mechanical polishing, which is a technology that uses a combination of chemical and mechanical methods to accurately grind and polish the surface of silicon wafers. It is the hardware foundation of this technology that can achieve global flattening of the silicon wafer surface and provide a good foundation for subsequent processes.

[0003] Chemical mechanical polishing is used for precise grinding and polishing of silicon wafer surfaces and is a key process in semiconductor manufacturing. The domestic CMP equipment industry is developing rapidly and has broad market prospects. Domestic companies such as Huahai Qingke, Jingyi Jingwei and AMEC have performed outstandingly in this field. In the future, CMP equipment will be more precisely integrated and widely used in the third-generation semiconductor and chip manufacturing process upgrades.

[0004] The CMP process includes three main steps: polishing, cleaning and transfer. During the polishing process, the chemical components in the polishing liquid react with the surface material of the wafer to form a thin film that can be mechanically removed. The polishing pad then removes this thin film through mechanical action to achieve a smooth surface. CMP equipment can be divided into 8-inch, 12-inch and 6 / 8-inch compatible equipment according to the application requirements.

[0005] Most of the current mainstream CMP equipment does not have a processing temperature control system. Taking Japanese and American machines as examples, the equipment is only equipped with temperature monitoring sensors, which cannot accurately reflect the temperature during polishing, nor can it intervene in the processing temperature, which will affect the quality and stability of the final product. Summary of the invention

[0006] The present invention mainly solves the deficiencies in the prior art and provides a method for monitoring and adjusting the CMP processing temperature, which has the advantages of compact structure and good operation stability. It solves the problem of monitoring the processing temperature of polishing equipment. Through CMP temperature monitoring and adjustment, process adjustment is met and product production quality and stability are improved.

[0007] The above technical problems of the present invention are mainly solved by the following technical solutions: A monitoring and regulating method for CMP processing temperature, the monitoring structure of the CMP processing temperature includes a polishing lower plate, the outer periphery of the polishing lower plate is provided with a plurality of liquid storage components distributed in an annular shape and connected and fixed to the polishing lower plate, a liquid retaining ring is provided between the liquid storage component and the polishing lower plate, and the liquid retaining ring is provided with a plurality of liquid outlet grooves connected to the liquid storage component. The liquid storage component includes a liquid storage tank body, the upper part of the liquid storage tank body is provided with a liquid storage tank connected to the liquid outlet groove, and the liquid storage tank body is provided with a contact temperature sensor located at the lower end of the liquid storage tank.

[0008] The monitoring and adjustment method of CMP processing temperature includes the following steps: Step 1: When the silicon wafer is undergoing CMP processing in the polishing equipment, the processed polishing liquid will enter the liquid storage component through the liquid outlet tank and the liquid storage tank by inertia.

[0009] Step 2: The polishing liquid flows into the liquid storage tank through the contact temperature sensor. At this time, the CMP processing temperature is monitored in real time by the contact temperature sensor.

[0010] Step 3: Adjust the temperature of the liquid supply system according to the temperature monitoring value of the polishing liquid by the contact temperature sensor.

[0011] Step 4: When the contact temperature sensor monitors a drop in temperature, the temperature of the liquid supply system is adjusted to increase the temperature supply; when the contact temperature sensor monitors an excessively high temperature, the temperature of the liquid supply system is adjusted to decrease the temperature supply.

[0012] The liquid supply system is an existing technical structure. The Chinese patent "Silicon Wafer Processing Grinding Liquid Recovery and Supply Method", application number 2023110790829, discloses the specific structure and use method of the liquid supply system.

[0013] Preferably, the liquid storage tank body is made of PFA plastic. The full name of PFA is polyfluoroethylene copolymer, and its alias is fusible polytetrafluoroethylene, which is a copolymer of a small amount of perfluoropropyl perfluorovinyl ether and polytetrafluoroethylene. It is a polymer material made of tetrafluoroethylene.

[0014] PFA material is a high-performance fluoroplastic with excellent chemical resistance, corrosion resistance, high temperature stability, oxidation resistance, low viscosity and low surface tension. It has the following main characteristics: Chemical stability: PFA is not afraid of almost all chemical solutions, solvents, strong acids and alkalis, so it is called the "King of Plastics".

[0015] ‌High temperature resistance‌: PFA can be used for a long time at a high temperature of 260°C, and can withstand higher temperatures in the short term.

[0016] ‌Easy to process‌: Compared with other fluoroplastics, PFA is easier to heat and shape, and can be easily made into various shapes, such as injection molding, extrusion, blow molding, etc.

[0017] ‌High Transparency‌: PFA is transparent and suitable for optical inspection.

[0018] ‌Low friction‌: PFA has a smooth surface, low friction, and is not easy to adhere to other substances. It is often used to make anti-stick coatings and sliding parts.

[0019] Due to its excellent performance, PFA is widely used in various equipment and pipelines in the chemical, pharmaceutical, food processing, electronics, medical equipment and other industries. In addition, PFA is also used to make corrosion-resistant parts, wear-resistant parts, seals, insulation parts and medical equipment parts.

[0020] Preferably, a liquid collecting pipe which is plug-in connected to the liquid storage tank body is provided at the lower end of the liquid storage tank body, and the polishing liquid refluxed in the liquid storage tank body is collected into the circulation filtering device for reuse through the liquid collecting pipe.

[0021] Preferably, a guide plate which is nested and fixedly connected to the contact temperature sensor is provided at the upper end of the contact temperature sensor, and the upper surfaces of the contact temperature sensor and the guide plate are inclined downward from the liquid storage tank.

[0022] The present invention can achieve the following effects: The present invention provides a method for monitoring and adjusting the CMP processing temperature, which has the advantages of compact structure and good operation stability compared with the prior art. The problem of monitoring the processing temperature of polishing equipment is solved. Through CMP temperature monitoring and adjustment, process adjustment is met and product production quality and stability are improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a structural schematic diagram of the present invention.

[0024] Figure 2 It is a structural cross-sectional view of the present invention.

[0025] Figure 3 It is a schematic structural diagram of the liquid storage component of the present invention.

[0026] In the figure: liquid storage assembly 1, polishing lower plate 2, liquid retaining ring 3, liquid outlet trough 4, liquid storage tank body 5, contact temperature sensor 6, guide plate 7, liquid collecting pipe 8, liquid storage tank 9. DETAILED DESCRIPTION

[0027] The technical solution of the invention is further specifically described below through embodiments and in conjunction with the accompanying drawings.

[0028] Example: Figure 1 , Figure 2 and Figure 3 As shown, a method for monitoring and adjusting the CMP processing temperature, the monitoring structure of the CMP processing temperature includes a polishing lower plate 2, and the outer periphery of the polishing lower plate 2 is provided with four liquid storage components 1 that are distributed in an annular manner with equal spacing and are connected and fixed to the polishing lower plate 2, and a liquid retaining ring 3 is provided between the liquid storage component 1 and the polishing lower plate 2, and the liquid retaining ring 3 is provided with four liquid outlet grooves 4 connected to the liquid storage component 1. The liquid storage component 1 includes a liquid storage tank body 5, and the liquid storage tank body 5 is made of PFA plastic. The full name of PFA is polyvinyl fluoride copolymer, and its alias is fusible polytetrafluoroethylene, a copolymer of a small amount of perfluoropropyl perfluorovinyl ether and polytetrafluoroethylene, which is a polymer material made of tetrafluoroethylene. A liquid storage tank 9 connected to the liquid outlet groove 4 is provided on the upper part of the liquid storage tank body 5, and a contact temperature sensor 6 located at the lower end of the liquid storage tank 9 is provided in the liquid storage tank body 5. The upper end of the contact temperature sensor 6 is provided with a guide plate 7 which is nested and fixedly connected with the contact temperature sensor 6. The upper end surfaces of the contact temperature sensor 6 and the guide plate 7 are inclined downward from the liquid storage tank 9. The lower end of the liquid storage tank body 5 is provided with a liquid collecting pipe 8 which is plug-in connected with the liquid storage tank body 5. The polishing liquid refluxed in the liquid storage tank body 5 is collected into the circulation filtering device for reuse through the liquid collecting pipe 8.

[0029] The monitoring and adjustment method of CMP processing temperature includes the following steps: Step 1: When the silicon wafer is subjected to CMP processing in the polishing equipment, the processed polishing liquid will enter the liquid storage component 1 through the liquid outlet tank 4 and the liquid storage tank 9 by inertia.

[0030] Step 2: The polishing liquid flows into the liquid storage tank 5 through the contact temperature sensor 6 , and the CMP processing temperature is monitored in real time by the contact temperature sensor 6 .

[0031] Step 3: According to the temperature monitoring value of the polishing liquid by the contact temperature sensor 6, the temperature of the liquid supply system is adjusted.

[0032] Step 4: When the temperature monitored by the contact temperature sensor 6 drops, the temperature of the liquid supply system is adjusted to increase the temperature supply; when the temperature monitored by the contact temperature sensor 6 is too high, the temperature of the liquid supply system is adjusted to decrease the temperature supply.

[0033] In summary, the CMP processing temperature monitoring and adjustment method has the advantages of compact structure and good operation stability. It solves the problem of polishing equipment processing temperature monitoring. Through CMP temperature monitoring and adjustment, process adjustment is met and product production quality and stability are improved.

[0034] The above description is only a specific embodiment of the present invention, but the structural features of the present invention are not limited thereto. Any changes or modifications made by any technician in the field of the present invention are included in the patent scope of the present invention.

Claims

1. A method for monitoring and adjusting CMP processing temperature, characterized in that: The CMP processing temperature monitoring structure comprises a polishing lower plate (2), a plurality of liquid storage components (1) distributed in an annular shape and connected and fixed to the polishing lower plate (2) are arranged on the periphery of the polishing lower plate (2), a liquid retaining ring (3) is arranged between the liquid storage component (1) and the polishing lower plate (2), and a plurality of liquid outlet grooves (4) connected to the liquid storage component (1) are arranged on the liquid retaining ring (3); the liquid storage component (1) comprises a liquid storage tank body (5), a liquid storage tank (9) connected to the liquid outlet groove (4) is arranged on the upper part of the liquid storage tank body (5), and a contact temperature sensor (6) located at the lower end of the liquid storage tank (9) is arranged in the liquid storage tank body (5); The monitoring and adjustment method of CMP processing temperature includes the following steps: Step 1: When a silicon wafer is subjected to CMP processing in a polishing device, the processed polishing liquid will enter the liquid storage component (1) through the liquid outlet tank (4) and the liquid storage tank (9) by inertia; Step 2: The polishing liquid flows into the liquid storage tank (5) through the contact temperature sensor (6), and the CMP processing temperature is monitored in real time by the contact temperature sensor (6); Step 3: adjusting the temperature of the liquid supply system according to the temperature monitoring value of the polishing liquid by the contact temperature sensor (6); Step 4: When the temperature detected by the contact temperature sensor (6) drops, the temperature of the liquid supply system is adjusted to increase the temperature supply; When the temperature detected by the contact temperature sensor (6) is too high, the temperature of the liquid supply system is adjusted to cool down the supply.

2. The method for monitoring and adjusting the CMP processing temperature according to claim 1, characterized in that: The material of the liquid storage tank body (5) is PFA plastic. The full name of PFA is polyfluoroethylene copolymer, and its alias is fusible polytetrafluoroethylene. It is a copolymer of a small amount of perfluoropropyl perfluorovinyl ether and polytetrafluoroethylene, and is a polymer material made of tetrafluoroethylene.

3. The method for monitoring and adjusting the CMP processing temperature according to claim 1, characterized in that: The lower end of the liquid storage tank body (5) is provided with a liquid collecting pipe (8) which is plug-in connected to the liquid storage tank body (5), and the polishing liquid refluxed in the liquid storage tank body (5) is collected into the circulation filtering device for reuse through the liquid collecting pipe (8).

4. The method for monitoring and adjusting the CMP processing temperature according to claim 1, characterized in that: The contact temperature sensor (6) is provided at its upper end with a guide plate (7) which is nested and fixedly connected to the contact temperature sensor (6); the upper end surfaces of the contact temperature sensor (6) and the guide plate (7) are inclined downward from the liquid storage tank (9).

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