Non-magnetic heating device of atomic gas chamber

Abstract

The invention provides a non-magnetic heating device of an atomic gas chamber. The non-magnetic heating device comprises heating chips and a heating and temperature measuring composite chip, wherein the heating chips are symmetrically and tightly attached to the outer surfaces of non-light-transmitting walls on the upper side and the lower side of the atomic gas chamber, and the heating and temperature measuring composite chip is tightly attached to the outer surface of a non-light-transmitting wall on the right side of the atomic gas chamber; the heating chip comprises a first outer-layer heating resistance wire, a first middle-layer insulator and a first inner-layer heating resistance wire, and the heating and temperature measuring composite chip comprises a second outer-layer heating resistance wire, an outer-layer thermistor wire, a second middle-layer insulator and a second inner-layer heating resistance wire. According to the atomic gas chamber heating assembly, the technical problems of how to design the structure of the atomic gas chamber heating assembly in the prior art and how to effectively eliminate the magnetic field generated in the heating process while heating the atomic gas chamber are solved.

Description

Technical Field

[0001] The invention relates to the technical field of atomic sensors, and in particular to a non-magnetic heating device for an atomic gas chamber. Background Art

[0002] An atomic clock is a timing device that uses the frequency of atomic vibration to measure time. Its ultra-high time accuracy makes it widely used in many fields such as basic scientific research, astronomy, communication technology, and navigation systems. With the continuous deepening of atomic clock research, the demand for miniaturization and low power consumption has become the development direction of atomic clocks in the future. Atomic gas chamber heating is an important source of power consumption for atomic clocks. The choice of atomic gas chamber heating method has a great impact on the power consumption and size of atomic clocks. Common atomic gas chamber heating methods include power tube heating and non-magnetic electric heating. Power tube heating requires a thick thermal conductive layer, which not only increases power consumption, but also increases the volume of the atomic clock; non-magnetic electric heating uses current to pass through a resistance wire to generate heat, so in the atomic gas chamber heating process, it has the advantages of convenient operation, easy integration, and high temperature control accuracy. However, when current passes through the resistance wire, a magnetic field is inevitably generated. Therefore, how to design the structure of the resistance wire to eliminate the magnetic field generated during the heating process of the resistance wire is a technical problem that needs to be solved in the current non-magnetic electric heating process.

[0003] The existing heating components of the atomic gas chamber are of two types: a heating film, such as a heating film prepared based on a flexible transparent substrate. Although it can realize double-sided heating to achieve the purpose of heating the atomic gas chamber, the resistance of the heating film is too small, resulting in excessive current and a corresponding increase in the generated magnetic field; the other type is a heating plate, such as a glass (silicon) heating plate obtained based on micro-nano processing technology. Although the resistance of the heating plate can be adjusted, it can usually only heat on one side and cannot effectively suppress the magnetic field; therefore, how to structurally design the heating component of the atomic gas chamber to meet the requirements of heating the atomic gas chamber while effectively eliminating the magnetic field generated during the heating process is a technical problem that needs to be solved at present.

[0004] The patent document with publication number CN109916387A discloses a non-magnetic temperature control system for SERF atomic gas chamber, including a non-magnetic heating plate, a heating body, an atomic gas chamber and a heating system. The non-magnetic heating plate is tightly attached to both sides of the thermally conductive heating body by thermally conductive silica gel or thermally conductive silicone grease. The non-magnetic heating plate is arranged on the outer surfaces of both sides of the thermally conductive heating body with through holes. The heating system drives the non-magnetic heating plate to heat and control the temperature of the atomic gas chamber. The non-magnetic heating plate adopts a flexible PCB board process, and the wiring is symmetrically wound in double lines on both sides of the polyimide film, so that the magnetic fields generated by the symmetrical wire currents cancel each other out, thereby realizing the heating and temperature measurement of the atomic gas chamber. It can be seen that although the above-mentioned non-magnetic temperature control system can heat and measure the temperature of the atomic gas chamber, it still cannot completely eliminate the magnetic field generated by the non-magnetic temperature control system during the heating process.

[0005] The patent document with publication number CN110411432B discloses a double-layer heating and insulation device for a SERF atomic gas chamber, including: an outer insulation layer, an intermediate heating layer, an inner heating layer, a non-magnetic heating plate, a temperature sensor and a heating system based on digital PID control. The inner heating layer, the intermediate heating layer and the outer insulation layer are wrapped around the outer wall of the atomic gas chamber to be heated and insulated from the inside to the outside in sequence, and the inner heating layer and the intermediate heating layer are provided with temperature sensors; the inner heating layer is a metal shell with a non-magnetic heating plate attached to the outer wall. It can be seen that the double-layer heating device and the outer heating structure can heat and insulate the atomic gas chamber, but cannot effectively eliminate the magnetic field generated by the non-magnetic temperature control system during the heating process. Summary of the invention

[0006] In view of the deficiencies in the prior art, the present invention provides a non-magnetic heating device for an atomic gas chamber. By placing two heating chips symmetrically and tightly on the outer surface of the non-light-transmitting wall of the atomic gas chamber and placing a heating and temperature measurement composite chip tightly on the outer surface of the non-light-transmitting wall on the right side of the atomic gas chamber, the technical problem of how to structurally design the heating component of the atomic gas chamber in the prior art is solved to meet the requirements of heating the atomic gas chamber and effectively eliminating the magnetic field generated during the heating process.

[0007] The technical solution of the present invention is as follows: A non-magnetic heating device for an atomic gas chamber. The main body of the atomic gas chamber is a square structure, the front and rear sides are light-transmitting walls, the upper and lower sides and the left and right sides are non-light-transmitting walls, and the left side is connected with a cone gas handle.

[0008] The non-magnetic heating device comprises a heating chip symmetrically attached to the outer surface of the non-light-transmitting wall on the upper and lower sides of the atomic gas chamber and a heating and temperature measurement composite chip attached to the outer surface of the non-light-transmitting wall on the right side of the atomic gas chamber; The heating chip includes a first outer layer heating resistance wire, a first middle layer insulator and a first inner layer heating resistance wire, the first outer layer heating resistance wire is adhered to the outer surface of the first middle layer insulator through an adhesive layer, and the first inner layer heating resistance wire is adhered to the inner surface of the first middle layer insulator through an adhesive layer; the first outer layer heating resistance wire and the first inner layer heating resistance wire are both heating resistance wires with a double-wire pair winding ring structure and their head and tail ends are respectively electrically connected to the positive and negative poles of the heating resistance wire; the first outer layer heating resistance wire and the first inner layer heating resistance wire are tightly attached to the inner and outer side walls of the first middle layer insulator and are symmetrically distributed; the magnitude of the current flowing in the first outer layer heating resistance wire is equal to the magnitude of the current flowing in the first inner layer heating resistance wire, and the direction of the current flowing in the first outer layer heating resistance wire is opposite to the direction of the current flowing in the first inner layer heating resistance wire; The heating and temperature measurement composite chip includes a second outer layer heating resistance wire, an outer layer thermistor wire, a second middle layer insulator and a second inner layer heating resistance wire, the second outer layer heating resistance wire is adhered to the outer surface of the second middle layer insulator through an adhesive layer, the second inner layer heating resistance wire is adhered to the inner surface of the second middle layer insulator through an adhesive layer, and the outer layer thermistor wire is adhered to the outer surface of the second middle layer insulator through an adhesive layer; the second outer layer heating resistance wire and the second inner layer heating resistance wire are both heating resistance wires with a double-wire pair winding ring structure and their head and tail ends are respectively electrically connected to the positive and negative electrodes of the heating resistance wire; the second outer layer heating resistance wire and the second inner layer heating resistance wire are tightly attached to the inner and outer side walls of the second middle layer insulator and are symmetrically distributed; the magnitude of the current flowing in the second outer layer heating resistance wire is equal to the magnitude of the current flowing in the second inner layer heating resistance wire, and the direction of the current flowing in the second outer layer heating resistance wire is opposite to the direction of the current flowing in the second inner layer heating resistance wire; The outer thermistor wire is a thermistor wire with a double wire pair winding ring structure and its two ends are electrically connected to the positive and negative poles of the thermistor wire respectively. The outer thermistor wire is tightly attached to the outer side wall of the second intermediate layer insulator and is located inside the double wire pair winding ring of the second outer layer heating resistance wire.

[0009] Furthermore, the first outer layer heating resistance wire and the first inner layer heating resistance wire are both double-wire-pair winding annular structures formed by one heating resistance wire, and include an inner square frame I and an outer square frame I; The middle part of the upper horizontal line segment I of the inner square frame I is disconnected to form an upper horizontal line left segment and an upper horizontal line right segment, the middle part of the upper horizontal line segment I of the outer square frame I is disconnected to form an upper horizontal line left segment and an upper horizontal line right segment, the right end of the upper horizontal line left segment of the inner square frame I is connected to the right end of the upper horizontal line left segment of the outer square frame I, and the left end of the upper horizontal line right segment of the inner square frame I is connected to the left end of the upper horizontal line right segment of the outer square frame I; The middle part of the lower horizontal line segment Ⅰ of the outer square frame Ⅰ is broken to form a lower horizontal line left segment and a lower horizontal line right segment. The right end of the lower horizontal line left segment of the outer square frame Ⅰ is the head end of the resistance wire, which is connected to the positive pole of the heating resistance wire. The left end of the lower horizontal line right segment of the outer square frame Ⅰ is the tail end of the heating resistance wire, which is connected to the negative pole of the heating resistance wire.

[0010] Further, the second inner layer heating resistance wire is a double-wire pair winding ring structure formed by one heating resistance wire, which includes an inner square frame II and an outer square frame II; the middle part of the lower horizontal line segment II of the inner square frame II is disconnected to form a lower horizontal line left segment and a lower horizontal line right segment, the middle part of the lower horizontal line segment II of the outer square frame II forms a lower horizontal line left segment and a lower horizontal line right segment, the left end of the lower horizontal line right segment of the inner square frame II is connected to the left end of the lower horizontal line right segment of the outer square frame II, the left end of the lower horizontal line right segment of the inner square frame II is the tail end of the heating resistance wire, which is connected to the negative electrode of the heating resistance wire, and the left end of the lower horizontal line right segment of the outer square frame II is the head end of the heating resistance wire, which is connected to the positive electrode of the heating resistance wire; The second outer layer of heating resistance wires are all double-wire-pair winding annular structures formed by one heating resistance wire, which include an inner square frame III and an outer square frame III; the middle part of the lower horizontal line segment III of the inner square frame III is disconnected to form a lower horizontal line left segment and a lower horizontal line right segment, the middle part of the lower horizontal line segment III of the outer square frame III forms a lower horizontal line left segment and a lower horizontal line right segment, the left end of the lower horizontal line right segment of the inner square frame III is connected to the left end of the lower horizontal line right segment of the outer square frame III, the right end of the lower horizontal line left segment of the inner square frame III is the head end of the heating resistance wire, which is connected to the positive electrode of the heating resistance wire, and the right end of the lower horizontal line left segment of the outer square frame III is the tail end of the heating resistance wire, which is connected to the negative electrode of the heating resistance wire; The outer layer thermistor wire is a double-wire-pair winding ring structure formed by a heating resistance wire, which includes an inner square frame IV and an outer square frame IV; The upper horizontal line segment IV of the inner square frame IV is disconnected in the middle to form an upper horizontal line left segment and an upper horizontal line right segment, the upper horizontal line segment IV of the outer square frame IV is disconnected in the middle to form an upper horizontal line left segment and an upper horizontal line right segment, the right end of the upper horizontal line left segment of the inner square frame IV is connected to the right end of the upper horizontal line left segment of the outer square frame IV, and the left end of the upper horizontal line right segment of the inner square frame IV is connected to the left end of the upper horizontal line right segment of the outer square frame IV; The middle part of the lower horizontal line segment IV of the outer square frame IV is broken to form a lower horizontal line left segment and a lower horizontal line right segment. The right end of the lower horizontal line left segment of the outer square frame IV is the head end of the thermistor wire, which is connected to the positive pole of the thermistor wire, and the left end of the lower horizontal line right segment of the outer square frame IV is the tail end of the thermistor wire, which is connected to the negative pole of the thermistor wire.

[0011] Furthermore, the first outer layer heating resistance wire, the first inner layer heating resistance wire, the second outer layer heating resistance wire and the second inner layer heating resistance wire are all made of metal Au, with a thickness ranging from 50nm to 200nm, a line width ranging from 10μm to 50μm, and a resistance value ranging from 100Ω to 1000Ω; The material of the adhesion layer is metal Ti, and its thickness ranges from 5nm to 10nm; The outer thermistor wire is made of metal Pt, with a thickness ranging from 50nm to 150nm and a line width ranging from 10μm to 30μm.

[0012] Furthermore, the thickness of the first intermediate layer insulator of the heating chip ranges from 0.3mm to 0.5mm, and its manufacturing material is glass; the thickness of the second intermediate layer insulator of the heating and temperature measurement composite chip ranges from 0.3mm to 0.5mm, and its manufacturing material is glass.

[0013] Furthermore, the first outer layer heating resistor wire, the first inner layer heating resistor wire, the second outer layer heating resistor wire, and the second inner layer heating resistor wire have a thickness of 100nm, a line width range of 15μm, a resistance value of 500Ω, a thickness of the adhesion layer of 10nm, a thickness of the thermistor wire of 100nm, and a line width of 10μm.

[0014] Furthermore, the thickness of the first intermediate layer insulator of the heating chip is in the range of 0.4 mm; the thickness of the second intermediate layer insulator of the heating and temperature measurement composite chip is in the range of 0.4 mm.

[0015] The present invention also provides a non-magnetic heating method using a non-magnetic heating device, comprising the following steps: Two heating chips are symmetrically attached to the outer surfaces of the non-light-transmitting walls on the upper and lower sides of the atomic gas chamber, and a heating and temperature measurement composite chip is attached to the outer surface of the non-light-transmitting wall on the right side of the atomic gas chamber; The two ends of the first outer layer heating resistance wire and the two ends of the first inner layer heating resistance wire in the heating chip are respectively connected in series between the collector of the NPN transistor and the power supply, and the two ends of the second outer layer heating resistance wire, the two ends of the second inner layer heating resistance wire, and the two ends of the outer layer thermistor wire in the heating and temperature measurement composite chip are respectively connected in series between the collector of the NPN transistor and the power supply, and the NPN transistor is used to power and drive the heating chip and the heating and temperature measurement composite chip, so that the heating chip and the heating and temperature measurement composite chip perform double-sided heating; The temperature is fed back by thermistor wire, and the current passed into the heating chip and the heating and temperature measurement composite chip is adjusted by using NPN transistor to control the double-sided heating of the heating chip and the heating and temperature measurement composite chip to offset the magnetic field.

[0016] Using the above-mentioned non-magnetic heating method, the heating chip structure adopts a double-wire winding structure design, and the spacing between the wires is small. A non-magnetic heating resistor wire is used, and Ti is used instead of Ni as an adhesion layer to offset the magnetic field; the heating chip adopts double-sided heating, and the currents passed through the upper and lower structures are equal and opposite, further offsetting the magnetic field; the heating chip resistor wire has a large resistance and a small current, and the magnetic field generated is also weakened accordingly.

[0017] Technical principle of the present invention: In the present invention, the resistance value of the heating resistance wire can be obtained by multiplying the density of the heating resistance wire by its length, and then dividing it by the line width of the heating resistance wire and the thickness of the heating resistance wire, that is, R=ρl / dh, wherein l is the length of the heating resistance wire, d is the line width of the heating resistance wire, and h is the thickness of the heating resistance wire. The present invention can accurately control the resistance value of the heating resistance wire by controlling the length, line width and thickness of the heating resistance wire, thereby increasing the resistance of the heating resistance wire under the same power consumption condition, reducing the current flowing through the heating resistance wire, and achieving the purpose of correspondingly reducing the magnetic field generated by the current.

[0018] The present invention has the following beneficial effects: 1. Compared with the resistance wire of the flexible circuit board heating sheet in the prior art, the present invention adjusts the length, line width and thickness of the heating resistance wire in the heating chip and the heating and temperature measurement composite chip, so as to accurately control the resistance value of the heating resistance wire within the range of 100Ω to 1000Ω, which is much higher than the resistance value of several ohms of the flexible circuit board heating sheet. Therefore, under the condition of the same power consumption, the current flowing through the heating resistance wire is greatly reduced, thereby reducing the magnetic field generated by the current in the heating resistance wire, and achieving the purpose of heating the atomic gas chamber and effectively eliminating the magnetic field generated during the heating process.

[0019] 2. The present invention designs two layers of symmetrical heating resistance wires inside and outside the heating chip and two layers of symmetrical heating resistance wires inside and outside the heating and temperature measurement composite chip. The currents flowing in the two layers of symmetrical heating resistance wires are equal in magnitude and opposite in direction, which can not only heat the atomic gas chamber but also effectively offset the magnetic field generated by the current. Furthermore, the present invention attaches heating chips to both the upper and lower surfaces of the atomic gas chamber, and the currents of the adjacent resistance wires are equal in magnitude and opposite in direction, further offsetting the magnetic field, thereby solving the technical problem of how to structurally design the heating component of the atomic gas chamber in the prior art, so as to meet the requirements of heating the atomic gas chamber and effectively eliminate the magnetic field generated during the heating process.

[0020] 3. The present invention adopts a double-pair winding ring structure in the outer layer of the heating and temperature measurement composite chip and a thermally sensitive metal resistance wire located within the double-pair winding ring structure of the second outer layer heating resistance wire. It can measure different resistances under different temperature conditions to calibrate the temperature without adding thermistor devices, which not only reduces the volume of the atomic clock physical system, but also simplifies the production and manufacturing process.

[0021] 4. The present invention designs the first outer layer heating resistance wire and the first inner layer heating resistance wire in the heating chip into a double-wire-pair winding ring structure, and designs the second outer layer heating resistance wire and the second inner layer heating resistance wire in the heating and composite chip into a double-wire-pair winding ring structure. This can not only meet the requirement of fully heating the atomic gas chamber, but also eliminate the magnetic field generated during the heating process. Compared with the heating resistance wire structure in the prior art, the double-wire-pair winding ring structure in the present invention has better heating and demagnetization effects.

[0022] 5. The present invention makes the heating resistance wires including the first outer layer heating resistance wire and the first inner layer heating resistance wire of the heating chip, and the second outer layer heating resistance wire and the second inner layer heating resistance wire of the heating and temperature measurement composite chip from metal Au material, and the adhesion layer is made of metal Ti material with a thickness of 10nm, and the thickness range of the above heating resistance wires is controlled within 50nm to 200nm, and the line width range is controlled within 10μm to 50μm. At the same time, the outer layer thermistor wire is made of metal Pt material, the adhesion layer between the outer layer thermistor wire and the first intermediate insulating layer is made of Ti material with a thickness of 10nm, and the thickness range of the above thermistor wire is controlled within 50nm to 150nm, and the line width range is controlled within 10μm to 30μm, thereby greatly improving the heating performance and magnetic field elimination performance of the heating chip, ensuring the normal operation of the atomic gas chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a three-dimensional diagram of a non-magnetic heating device for an atomic gas chamber according to an embodiment of the present invention; Figure 2 is a schematic structural diagram of a heating chip according to an embodiment of the present invention; Figure 3 is a schematic diagram of the structure of the heating and temperature measurement composite chip according to an embodiment of the present invention; Figure 4 It is a structural schematic diagram of a double-pair winding ring structure of a first outer layer heating resistance wire and a first inner layer heating resistance wire according to an embodiment of the present invention; Figure 5 is a structural schematic diagram of a double-wire-pair wound annular structure of a second inner layer heating resistance wire according to an embodiment of the present invention; Figure 6 It is a structural schematic diagram of the double-wire-pair wound annular structure of the second outer layer heating resistance wire described in an embodiment of the present invention. DETAILED DESCRIPTION

[0024] As attached Figure 1 As shown, a non-magnetic heating device for an atomic gas chamber, the main body of the atomic gas chamber is a square structure, the front and rear side surfaces are light-transmitting walls, the upper and lower side surfaces and the right side surface are non-light-transmitting walls, and the left side surface is a light-transmitting wall connected to a conical gas handle. The non-magnetic heating device includes a heating chip 1 symmetrically attached to the outer surface of the non-light-transmitting wall on the upper and lower sides of the atomic gas chamber and a heating and temperature measurement composite chip 2 attached to the outer surface of the non-light-transmitting wall on the right side of the atomic gas chamber.

[0025] As attached Figure 2As shown, each heating chip 1 includes a first outer layer heating resistance wire 3, a first middle layer insulator 4 and a first inner layer heating resistance wire 5. The thickness of the middle layer insulator 4 of the heating chip ranges from 0.3 mm to 0.5 mm, and its manufacturing material is glass; the first outer layer heating resistance wire 3 is adhered to the outer surface of the first middle layer insulator 4 through an adhesive layer, and the first inner layer heating resistance wire 5 is adhered to the inner surface of the first middle layer insulator 4 through an adhesive layer; the first outer layer heating resistance wire 3 and the first inner layer heating resistance wire 5 are both heating resistance wires with a double-wire pair winding ring structure and their head and tail ends are electrically connected to the positive and negative electrodes of the heating resistance wire respectively; the first outer layer heating resistance wire 3 and the first inner layer heating resistance wire 5 are tightly attached to the inner and outer side walls of the first middle layer insulator 4 and are symmetrically distributed; the magnitude of the current flowing in the first outer layer heating resistance wire 3 is equal to the magnitude of the current flowing in the first inner layer heating resistance wire 5, and the direction of the current flowing in the first outer layer heating resistance wire 3 is opposite to the direction of the current flowing in the first inner layer heating resistance wire 5.

[0026] As attached Figure 3 As shown, the heating and temperature measurement composite chip 2 includes a second outer layer heating resistance wire 6, an outer layer thermistor wire 7, a second intermediate layer insulator 8 and a second inner layer heating resistance wire 9. The thickness of the second intermediate layer insulator 8 ranges from 0.3 mm to 0.5 mm and is made of glass. The second outer layer heating resistance wire 6 is adhered to the outer surface of the second intermediate layer insulator 8 through an adhesive layer, the second inner layer heating resistance wire 9 is adhered to the inner surface of the second intermediate layer insulator 8 through an adhesive layer, and the outer layer thermistor wire 7 is adhered to the outer surface of the second intermediate layer insulator 8 through an adhesive layer. The second outer layer heating resistance wire 6 and the second inner layer heating resistance wire 9 are both in a double-wire-pair winding ring structure and their ends are respectively connected to the heating resistance wires. The heating resistance wire has positive and negative poles electrically connected; the second outer layer heating resistance wire 6 and the second inner layer heating resistance wire 9 are tightly attached to the inner and outer side walls of the second intermediate layer insulator 8 and are symmetrically distributed; the magnitude of the current flowing in the second outer layer heating resistance wire 6 is equal to the magnitude of the current flowing in the second inner layer heating resistance wire 9, and the direction of the current flowing in the second outer layer heating resistance wire 6 is opposite to the direction of the current flowing in the second inner layer heating resistance wire 9; the outer layer thermistor wire 7 is a thermistor wire with a double-wire pair winding ring structure and its head and tail ends are respectively electrically connected to the positive and negative poles of the thermistor wire, the outer layer thermistor wire 7 is tightly attached to the outer side wall of the second intermediate layer insulator 8 and is located in the double-wire pair winding ring of the second outer layer heating resistance wire 6.

[0027] As attached Figure 4As shown, the first outer layer heating resistance wire 3 and the first inner layer heating resistance wire 5 are both double-wire-pair winding ring structures formed by one heating resistance wire. The first outer layer heating resistance wire 3 and the first inner layer heating resistance wire 5 are made of metal Au with a thickness ranging from 50nm to 200nm and a line width ranging from 10μm to 50μm. Metal Ti is used as the material of the adhesion layer with a thickness of 10nm.

[0028] The first outer layer heating resistance wire 3 and the first inner layer heating resistance wire 5 both include an inner square frame Ⅰ10 and an outer square frame Ⅰ11. The upper horizontal line segment Ⅰ10-1 of the inner square frame Ⅰ10 is disconnected in the middle to form an upper horizontal line left segment and an upper horizontal line right segment. The upper horizontal line segment Ⅰ11-1 of the outer square frame Ⅰ11 is disconnected in the middle to form an upper horizontal line left segment and an upper horizontal line right segment. The right end of the upper horizontal line left segment of the inner square frame Ⅰ10 is connected to the right end of the upper horizontal line left segment of the outer square frame Ⅰ11, and the left end of the upper horizontal line right segment of the inner square frame Ⅰ10 is connected to the left end of the upper horizontal line right segment of the outer square frame Ⅰ11.

[0029] The middle part of the lower horizontal line segment Ⅰ11-2 of the outer square frame Ⅰ11 is broken to form a lower horizontal line left segment and a lower horizontal line right segment. The right end of the lower horizontal line left segment of the outer square frame Ⅰ11 is the head end of the resistance wire, which is connected to the positive electrode 18 of the heating resistance wire. The left end of the lower horizontal line right segment of the outer square frame Ⅰ11 is the tail end of the heating resistance wire, which is connected to the negative electrode 19 of the heating resistance wire.

[0030] As attached Figure 5 As shown, the second inner layer heating resistance wire has a double wire pair wound ring structure, the second inner layer heating resistance wire has a thickness range of 50nm to 200nm, a line width range of 10μm to 50μm, and is made of metal Ti or metal Au.

[0031] The second inner layer heating resistance wire 9 includes an inner square frame Ⅱ12 and an outer square frame Ⅱ13; the lower horizontal line segment Ⅱ12-1 of the inner square frame Ⅱ12 is disconnected in the middle to form a lower horizontal line left segment and a lower horizontal line right segment, and the lower horizontal line segment Ⅱ13-1 of the outer square frame Ⅱ13 is formed in the middle to form a lower horizontal line left segment and a lower horizontal line right segment, the left end of the lower horizontal line right segment of the inner square frame Ⅱ12 is connected to the left end of the lower horizontal line right segment of the outer square frame Ⅱ13, the right end of the lower horizontal line left segment of the inner square frame Ⅱ12 is the tail end of the heating resistance wire, which is connected to the negative electrode 19 of the heating resistance wire, and the right end of the lower horizontal line left segment of the outer square frame Ⅱ13 is the head end of the heating resistance wire, which is connected to the positive electrode 18 of the heating resistance wire.

[0032] As attached Figure 6 As shown, the second outer layer heating resistance wire has a double wire pair wound ring structure. The second outer layer heating resistance wire is made of metal Ti and metal Au. The thickness of Ti as an adhesion layer is 10nm, the thickness of the Au layer ranges from 50nm to 200nm, and the line width ranges from 10μm to 50μm.

[0033] The second outer layer heating resistance wire includes an inner square frame Ⅲ14 and an outer square frame Ⅲ15; the middle part of the lower horizontal line segment Ⅲ14-1 of the inner square frame Ⅲ14 is broken to form a lower horizontal line left segment and a lower horizontal line right segment, the middle part of the lower horizontal line segment Ⅲ15-1 of the outer square frame Ⅲ15 forms a lower horizontal line left segment and a lower horizontal line right segment, the right end of the lower horizontal line left segment of the inner square frame Ⅲ14 is connected to the right end of the lower horizontal line left segment of the outer square frame Ⅲ15, the left end of the lower horizontal line right segment of the inner square frame Ⅲ14 is the head end of the heating resistance wire, which is connected to the positive electrode 18 of the heating resistance wire, and the left end of the lower horizontal line right segment of the outer square frame Ⅲ15 is the tail end of the heating resistance wire, which is connected to the negative electrode 19 of the heating resistance wire.

[0034] As attached Figure 6 As shown, the outer layer thermistor wire has a double wire pair winding ring structure, the thermistor wire is made of metal Ti and metal Pt, the thickness of Ti as an adhesion layer is 10nm, the thickness of the Pt layer ranges from 50nm to 150nm, and the line width ranges from 10μm to 30μm. In this embodiment, the first outer layer heating resistance wire, the first inner layer heating resistance wire, the second outer layer heating resistance wire, and the second inner layer heating resistance wire have a thickness of 100nm, a line width range of 15μm, and a resistance value of 500Ω. The thickness of the adhesion layer is 10nm, and the thickness of the thermistor wire is 100nm, and the line width is 10μm. The thickness of the first intermediate layer insulator of the heating chip ranges from 0.4mm, and the material thereof is glass; the thickness of the second intermediate layer insulator of the heating and temperature measurement composite chip ranges from 0.4mm, and the material thereof is glass.

[0035] The outer layer thermistor wire includes an inner square frame IV16 and an outer square frame IV17. The upper horizontal line segment IV16-1 of the inner square frame IV16 is disconnected in the middle to form an upper horizontal line left segment and an upper horizontal line right segment. The upper horizontal line segment IV17-1 of the outer square frame IV17 is disconnected in the middle to form an upper horizontal line left segment and an upper horizontal line right segment. The right end of the upper horizontal line left segment of the inner square frame IV16 is connected to the right end of the upper horizontal line left segment of the outer square frame IV17, and the left end of the upper horizontal line right segment of the inner square frame IV16 is connected to the left end of the upper horizontal line right segment of the outer square frame IV17.

[0036] The middle part of the lower horizontal line segment IV17-1 of the outer square frame IV17 is broken to form a lower horizontal line left segment and a lower horizontal line right segment. The right end of the lower horizontal line left segment of the outer square frame IV17 is the head end of the thermistor wire, which is connected to the positive electrode 20 of the thermistor wire, and the left end of the lower horizontal line right segment of the outer square frame IV17 is the tail end of the thermistor wire, which is connected to the negative electrode 21 of the thermistor wire.

[0037] The non-magnetic heating device of the atomic gas chamber described in the embodiment of the present invention can effectively offset the magnetic field generated by the current through the heating chips symmetrically attached to the outer surfaces of the non-light-transmitting walls on the upper and lower sides of the atomic gas chamber and the heating and temperature measurement composite chip attached to the outer surface of the non-light-transmitting wall on the right side of the atomic gas chamber, thereby solving the technical problem of how to structurally design the heating component of the atomic gas chamber in the prior art so as to meet the requirements of heating the atomic gas chamber and effectively eliminate the magnetic field generated during the heating process.

[0038] The embodiment of the present invention designs the heating chip into a three-layer structure of a first outer heating resistance wire, a first middle layer insulator and a first inner heating resistance wire, and the heating and temperature measurement composite chip includes a three-layer structure of a second outer heating resistance wire, an outer thermistor wire, a second middle layer insulator and a second inner heating resistance wire. The current flowing in the first outer heating resistance wire is equal to the current flowing in the first inner heating resistance wire, and the current directions are opposite. The current flowing in the second outer heating resistance wire is equal to the current flowing in the second inner heating resistance wire, and the current directions are opposite. This can not only achieve heating of the atomic gas chamber, but also effectively offset the magnetic field generated by the current.

[0039] In the embodiment of the present invention, the first outer layer heating resistor wire and the first inner layer heating resistor wire in the heating chip are designed to be a double-wire-pair winding ring structure, and the second outer layer heating resistor wire and the second inner layer heating resistor wire in the heating and composite chip are designed to be a double-wire-pair winding ring structure, and the thickness range of the heating resistor wire in the double-wire-pair winding ring structure is controlled within 50nm to 200nm, and the line width range is controlled within 10μm to 50μm. At the same time, the thermistor wire is made of metal Ti or metal Pt material, and the thickness range of the thermistor wire is controlled within 100nm to 150nm, and the line width range is controlled within 10μm to 30μm, thereby greatly improving the heating performance and magnetic field elimination performance of the heating chip, ensuring the normal operation of the atomic gas chamber.

Claims

1. A non-magnetic heating device for an atomic gas chamber, wherein the body of the atomic gas chamber is a square structure, the front and rear sides of the atomic gas chamber are light-transmitting walls, the upper and lower sides and the left and right sides are non-light-transmitting walls, and the left side is connected to a cone gas handle, characterized in that: The non-magnetic heating device comprises a heating chip symmetrically attached to the outer surface of the non-light-transmitting wall on the upper and lower sides of the atomic gas chamber, and a heating and temperature measurement composite chip attached to the outer surface of the non-light-transmitting wall on the right side of the atomic gas chamber; The heating chip comprises a first outer layer heating resistance wire, a first middle layer insulator and a first inner layer heating resistance wire, wherein the first outer layer heating resistance wire is adhered to the outer surface of the first middle layer insulator through an adhesive layer, and the first inner layer heating resistance wire is adhered to the inner surface of the first middle layer insulator through an adhesive layer; the first outer layer heating resistance wire and the first inner layer heating resistance wire are both heating resistance wires with a double-wire pair winding ring structure and the head and tail ends thereof are electrically connected to the positive and negative electrodes of the heating resistance wire respectively; the first outer layer heating resistance wire and the first inner layer heating resistance wire are tightly attached to the inner and outer side walls of the first middle layer insulator and are symmetrically distributed; the magnitude of the current flowing in the first outer layer heating resistance wire is equal to the magnitude of the current flowing in the first inner layer heating resistance wire, and the direction of the current flowing in the first outer layer heating resistance wire is opposite to the direction of the current flowing in the first inner layer heating resistance wire; The heating and temperature measurement composite chip comprises a second outer layer heating resistance wire, an outer layer thermistor wire, a second middle layer insulator and a second inner layer heating resistance wire, wherein the second outer layer heating resistance wire is adhered to the outer surface of the second middle layer insulator through an adhesive layer, the second inner layer heating resistance wire is adhered to the inner surface of the second middle layer insulator through an adhesive layer, and the outer layer thermistor wire is adhered to the outer surface of the second middle layer insulator through an adhesive layer; The second outer layer heating resistance wire and the second inner layer heating resistance wire are both heating resistance wires with a double-wire pair winding ring structure and the head and tail ends thereof are respectively electrically connected to the positive and negative electrodes of the heating resistance wire; the second outer layer heating resistance wire and the second inner layer heating resistance wire are tightly attached to the inner and outer side walls of the second intermediate layer insulator and are symmetrically distributed; the magnitude of the current flowing in the second outer layer heating resistance wire is equal to the magnitude of the current flowing in the second inner layer heating resistance wire, and the direction of the current flowing in the second outer layer heating resistance wire is opposite to the direction of the current flowing in the second inner layer heating resistance wire; The outer thermistor wire is a thermistor wire with a double wire pair winding ring structure and its two ends are electrically connected to the positive and negative poles of the thermistor wire respectively. The outer thermistor wire is tightly attached to the outer side wall of the second intermediate layer insulator and is located inside the double wire pair winding ring of the second outer layer heating resistance wire.

2. The non-magnetic heating device for an atomic gas chamber as claimed in claim 1, characterized in that: The first outer layer heating resistance wire and the first inner layer heating resistance wire are both double-wire-pair winding annular structures formed by one heating resistance wire, and include an inner square frame I and an outer square frame I; The middle part of the upper horizontal line segment I of the inner square frame I is disconnected to form an upper horizontal line left segment and an upper horizontal line right segment, the middle part of the upper horizontal line segment I of the outer square frame I is disconnected to form an upper horizontal line left segment and an upper horizontal line right segment, the right end of the upper horizontal line left segment of the inner square frame I is connected to the right end of the upper horizontal line left segment of the outer square frame I, and the left end of the upper horizontal line right segment of the inner square frame I is connected to the left end of the upper horizontal line right segment of the outer square frame I; The middle part of the lower horizontal line segment I of the outer square frame I is broken to form a lower horizontal line left segment and a lower horizontal line right segment. The right end of the lower horizontal line left segment of the outer square frame I is the head end of the resistance wire, which is connected to the positive pole of the heating resistance wire. The left end of the lower horizontal line right segment of the outer square frame I is the tail end of the heating resistance wire, which is connected to the negative pole of the heating resistance wire.

3. The non-magnetic heating device for an atomic gas chamber as claimed in claim 2, characterized in that: The second inner layer heating resistance wire is a double-wire pair winding annular structure formed by one heating resistance wire, which includes an inner square frame II and an outer square frame II; the middle part of the lower horizontal line segment II of the inner square frame II is disconnected to form a lower horizontal line left segment and a lower horizontal line right segment, the middle part of the lower horizontal line segment II of the outer square frame II forms a lower horizontal line left segment and a lower horizontal line right segment, the left end of the lower horizontal line right segment of the inner square frame II is connected to the left end of the lower horizontal line right segment of the outer square frame II, the left end of the lower horizontal line right segment of the inner square frame II is the tail end of the heating resistance wire, which is connected to the negative electrode of the heating resistance wire, and the left end of the lower horizontal line right segment of the outer square frame II is the head end of the heating resistance wire, which is connected to the positive electrode of the heating resistance wire; The second outer layer heating resistance wire is a double-wire pair winding annular structure formed by one heating resistance wire, which includes an inner square frame III and an outer square frame III; the middle part of the lower horizontal line segment III of the inner square frame III is disconnected to form a lower horizontal line left segment and a lower horizontal line right segment, the middle part of the lower horizontal line segment III of the outer square frame III forms a lower horizontal line left segment and a lower horizontal line right segment, the left end of the lower horizontal line right segment of the inner square frame III is connected to the left end of the lower horizontal line right segment of the outer square frame III, the right end of the lower horizontal line left segment of the inner square frame III is the head end of the heating resistance wire, which is connected to the positive electrode of the heating resistance wire, and the right end of the lower horizontal line left segment of the outer square frame III is the tail end of the heating resistance wire, which is connected to the negative electrode of the heating resistance wire; The outer layer thermistor wire is a double-wire-pair winding ring structure formed by a heating resistance wire, which includes an inner square frame IV and an outer square frame IV; The upper horizontal line segment IV of the inner square frame IV is disconnected in the middle to form an upper horizontal line left segment and an upper horizontal line right segment, the upper horizontal line segment IV of the outer square frame IV is disconnected in the middle to form an upper horizontal line left segment and an upper horizontal line right segment, the right end of the upper horizontal line left segment of the inner square frame IV is connected to the right end of the upper horizontal line left segment of the outer square frame IV, and the left end of the upper horizontal line right segment of the inner square frame IV is connected to the left end of the upper horizontal line right segment of the outer square frame IV; The middle part of the lower horizontal line segment IV of the outer square frame IV is broken to form a lower horizontal line left segment and a lower horizontal line right segment. The right end of the lower horizontal line left segment of the outer square frame IV is the head end of the thermistor wire, which is connected to the positive electrode of the thermistor wire, and the left end of the lower horizontal line right segment of the outer square frame IV is the tail end of the thermistor wire, which is connected to the negative electrode of the thermistor wire.

4. The non-magnetic heating device for an atomic gas chamber as claimed in claim 3, characterized in that: The first outer layer heating resistance wire, the first inner layer heating resistance wire, the second outer layer heating resistance wire and the second inner layer heating resistance wire are all made of metal Au, with a thickness ranging from 50nm to 200nm, a line width ranging from 10μm to 50μm, and a resistance value ranging from 100Ω to 1000Ω; The adhesive layer is made of metal Ti, and its thickness ranges from 5nm to 10nm; The outer layer thermistor wire is made of metal Pt, has a thickness ranging from 50 nm to 150 nm, and a line width ranging from 10 μm to 30 μm.

5. The non-magnetic heating device for an atomic gas chamber as claimed in claim 4, characterized in that: The thickness of the first intermediate layer insulator of the heating chip ranges from 0.3mm to 0.5mm, and the material thereof is glass; the thickness of the second intermediate layer insulator of the heating and temperature measurement composite chip ranges from 0.3mm to 0.5mm, and the material thereof is glass.

6. The non-magnetic heating device for an atomic gas chamber as claimed in claim 5, characterized in that: The first outer layer heating resistance wire, the first inner layer heating resistance wire, the second outer layer heating resistance wire, and the second inner layer heating resistance wire have a thickness of 100nm, a line width range of 15μm, and a resistance value of 500Ω. The thickness of the adhesion layer is 10nm, and the thickness of the thermistor wire is 100nm and the line width is 10μm.

7. The non-magnetic heating device for an atomic gas chamber as claimed in claim 5, characterized in that: The thickness of the first intermediate layer insulator of the heating chip is in the range of 0.4 mm; the thickness of the second intermediate layer insulator of the heating and temperature measurement composite chip is in the range of 0.4 mm.

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