Silicon wafer lifting ring, thin film deposition equipment and thin film deposition method

Abstract

The invention discloses a silicon wafer lifting ring, thin film deposition equipment and a thin film deposition method. The silicon wafer lifting ring can be arranged in the thin film deposition chamber, a heating table used for bearing a silicon wafer for thin film deposition is arranged in the thin film deposition chamber, and the silicon wafer lifting ring has a telescopic inner diameter; in the film deposition period, the silicon wafer lifting ring is configured in the mode that the telescopic inner diameter is expanded to the first inner diameter larger than the diameter of the silicon wafer and the diameter of the heating table, and the silicon wafer lifting ring does not make contact with the silicon wafer and the heating table; in the silicon wafer lifting period, the silicon wafer lifting ring is configured in the mode that the first inner diameter is shrunk to a second inner diameter smaller than the diameter of the silicon wafer, and the silicon wafer lifting ring is moved to the bottom of the silicon wafer so as to lift the silicon wafer. According to the invention, the silicon wafer is rotated and deposited for multiple times in the cavity through the silicon wafer lifting ring, so that the effects of uniform deposition thickness of a silicon wafer film and high production efficiency are realized.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor thin film deposition, and further to a silicon wafer lifting ring, a thin film deposition device and a thin film deposition method. Background Art

[0002] Thin film preparation technology has a very wide range of applications in VLSI technology. According to its film forming method, it can be divided into two categories: physical vapor deposition PVD (Physical Vapor Deposition) and chemical vapor deposition CVD (Chemical Vapor Deposition). Plasma enhanced chemical vapor deposition PECVD (Plasma Enhanced Chemical Vapor Deposition) is a type of chemical vapor deposition, and its most prominent advantage is the low deposition temperature. The thin film deposited by PECVD has excellent electrical properties, good substrate adhesion and excellent step coverage. Because of these advantages, it has a wide range of applications in VLSI, optoelectronic devices and other fields.

[0003] Thin film deposition equipment is used to deposit various dielectric layers, metal layers, etc. in the production process of semiconductor chips. The silicon wafer is moved into the chamber by a vacuum robot and placed on a heater in the chamber. Then the reaction gas enters the chamber through a shower head located just above the heater. The reaction gas forms plasma under the action of radio frequency. The plasma migrates to the surface of the silicon wafer to react and form a silicide film.

[0004] During the deposition of thin films on the surface of silicon wafers, the uniformity of film thickness is a key factor in considering the performance of the machine. The distance between the shower head and the heating platform, the distribution of the air outlets of the shower head, the temperature uniformity of the heating platform, and the position of the air outlet of the pump will all affect the uniformity of the film. The above factors are hardware effects caused by the structure of the machine, which will cause fixed thickness differences at fixed positions of the silicon wafer, such as the problem of unilateral film thickness.

[0005] The main solution to the problem of uneven film thickness in the industry is not only to improve the hardware structure, but also to reduce the deposition rate by changing the process conditions, which can also improve the uniformity of the film, but it will reduce the working efficiency of the machine.

[0006] In a Chinese patent with application number 201710086741.X and patent name "Thin Film Deposition Method", a substrate thin film deposition method is disclosed. The method first completes the deposition of a first thickness thin film on the substrate in a thin film deposition chamber, then uses a robot to take the substrate out of the thin film deposition chamber, rotates it 180°, and then puts it back into the thin film deposition chamber for deposition of a second thickness thin film. By repeating the above steps many times, the different process environments of various areas on the circumference of the substrate can be changed to compensate for the difference in film thickness deposited in various areas on the circumference of the substrate, thereby improving the thickness uniformity of the thin film. However, the patent solution repeatedly moves the substrate inside and outside the thin film deposition chamber, which undoubtedly increases the silicon wafer thin film deposition process cycle and affects production efficiency.

[0007] In the Chinese patent with application number 201580013445.6 and patent name "Wafer Rotation in Semiconductor Chamber", a device for processing substrates is disclosed. The device is equipped with a rotating mechanism and an edge ring in the thin film deposition chamber. The edge ring is located between the silicon wafer and the heating table and contacts the bottom edge of the silicon wafer. The edge ring can be selectively connected to the rotating mechanism in a transmission manner, so that after the silicon wafer completes one thin film deposition, the edge ring can rotate the silicon wafer angle for a second thin film deposition. That is, the patent solution can complete the rotation of the silicon wafer in the thin film deposition chamber by using the edge ring, thereby avoiding the extension of the silicon wafer thin film deposition cycle and ensuring production efficiency.

[0008] In the latter patent scheme, although the silicon wafer can be rotated by the edge ring in the thin film deposition chamber, since the inner diameter of the edge ring needs to be smaller than the diameter of the silicon wafer and the edge ring is always between the silicon wafer and the heating table, the diameter of the heating table that the silicon wafer contacts is smaller than the diameter of the silicon wafer, and the effect of heat completely covering the entire silicon wafer cannot be achieved. Since the edge of the silicon wafer does not contact the heating table, the temperature will be lower than the center of the silicon wafer, which will again affect the uniformity of the film deposition thickness on the surface of the silicon wafer.

[0009] Therefore, in the silicon wafer thin film deposition process, how to both improve production efficiency and ensure the uniformity of silicon wafer thin film deposition thickness is a technical problem that technical personnel in this field are eager to solve. Summary of the invention

[0010] In view of the above technical problems, the purpose of the present invention is to improve the efficiency of the silicon wafer thin film deposition process and ensure the uniformity of the silicon wafer thin film deposition thickness.

[0011] In order to achieve the above-mentioned purpose, the present invention provides a silicon wafer lifting ring, which can be installed in a thin film deposition chamber. The thin film deposition chamber is provided with a heating platform for carrying a silicon wafer for thin film deposition, and the silicon wafer lifting ring has a retractable inner diameter; during thin film deposition, the silicon wafer lifting ring is configured as follows: the retractable inner diameter expands to a first inner diameter larger than the diameter of the silicon wafer and the diameter of the heating platform, and does not contact the silicon wafer and the heating platform; during lifting the silicon wafer, the silicon wafer lifting ring is configured as follows: the first inner diameter shrinks to a second inner diameter smaller than the diameter of the silicon wafer, and is moved to the bottom of the silicon wafer to lift the silicon wafer.

[0012] The present invention also provides a thin film deposition device, including the above-mentioned silicon wafer lifting ring, and also includes: a thin film deposition chamber for accommodating a silicon wafer; a heating platform located in the thin film deposition chamber; a shower head located above the heating platform and used to input reaction gas into the thin film deposition chamber; and a plurality of support columns for supporting the silicon wafer.

[0013] The present invention also provides a thin film deposition method, comprising:

[0014] Step S10: the heating platform is raised and lowered below the silicon wafer lifting ring, the support column passes through the heating platform and rises to be higher than the silicon wafer lifting ring, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column;

[0015] Step S11: the height of the support column remains unchanged, and the heating platform rises to place the silicon wafer on the heating platform;

[0016] Step S12: inputting reaction gas through the shower head to perform a thin film deposition;

[0017] Step S13: Control the support column and the silicon wafer to maintain a constant height, and the heating platform is lowered to be lower than the silicon wafer lifting ring;

[0018] Step S14: controlling the retractable inner diameter of the silicon wafer lifting ring to decrease to a second inner diameter that is smaller than the diameter of the silicon wafer;

[0019] Step S15: controlling the support column to drive the silicon wafer to descend until the silicon wafer is supported by the silicon wafer lifting ring and the support column is separated from the silicon wafer;

[0020] Step S16: the heating platform is stationary, and the silicon wafer lifting ring drives the silicon wafer to rotate to a preset angle; or, the silicon wafer lifting ring carrying the silicon wafer is stationary, and the heating platform is rotated to a preset angle;

[0021] Step S17: controlling the support column to rise until the silicon wafer is lifted off the silicon wafer lifting ring;

[0022] Step S18: controlling the retractable inner diameter of the silicon wafer lifting ring to expand to a first inner diameter that is larger than the diameter of the silicon wafer and the diameter of the heating platform;

[0023] Step S19: controlling the support column and the silicon wafer to maintain a constant height, and the heating platform rises until the silicon wafer is placed on the heating platform to perform the next thin film deposition.

[0024] In one embodiment, the thin film deposition method comprises:

[0025] Step S20: the silicon wafer lifting ring is lifted and lowered below the heating platform, the support column passes through the heating platform and rises to a position higher than the heating platform, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column;

[0026] Step S21: the height of the heating platform remains unchanged and the support pillars are lowered so that the silicon wafer is placed on the heating platform, or the height of the support pillars remains unchanged and the heating platform is raised so that the silicon wafer is placed on the heating platform;

[0027] Step S22: inputting reaction gas through the shower head to perform a thin film deposition;

[0028] Step S23: controlling the support column to drive the silicon wafer to rise, and the silicon wafer lifting ring rises to between the silicon wafer and the heating platform, or the support column supports the silicon wafer, the heating platform descends, and the silicon wafer lifting ring rises to between the silicon wafer and the heating platform;

[0029] Step S24: controlling the retractable inner diameter of the silicon wafer lifting ring to decrease to a second inner diameter that is smaller than the diameter of the silicon wafer;

[0030] Step S25: controlling the support column to drive the silicon wafer downward until the silicon wafer is supported by the silicon wafer lifting ring and the support column is separated from the silicon wafer, or the silicon wafer lifting ring rises until the silicon wafer is lifted and driven to continue to rise and the support column is separated from the silicon wafer;

[0031] Step S26: the heating platform is stationary, and the silicon wafer lifting ring drives the silicon wafer to rotate to a preset angle; or, the silicon wafer lifting ring and the silicon wafer are stationary, and the heating platform rotates to a preset angle;

[0032] Step S27: controlling the support column to rise until the silicon wafer is lifted from the silicon wafer lifting ring, or controlling the silicon wafer lifting ring to descend until the support column lifts the silicon wafer from the silicon wafer lifting ring;

[0033] Step S28: controlling the retractable inner diameter of the silicon wafer lifting ring to expand to a first inner diameter that is larger than the diameter of the silicon wafer and the diameter of the heating platform;

[0034] Step S29: Control the silicon wafer lifting ring to move to the bottom of the heating platform, and the support column drives the silicon wafer to descend or the heating platform to ascend, until the silicon wafer is placed on the heating platform to implement the next thin film deposition.

[0035] In one embodiment, the thin film deposition method comprises:

[0036] Step S30: the heating platform is raised and lowered below the silicon wafer lifting ring, the support column passes through the heating platform and rises to be higher than the silicon wafer lifting ring, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column;

[0037] Step S31: the height of the support column remains unchanged, and the heating platform rises to place the silicon wafer on the heating platform;

[0038] Step S32: inputting reaction gas through the shower head to perform a thin film deposition;

[0039] Step S33: controlling the support column and the silicon wafer to maintain a constant height, and the heating platform is lowered to be lower than the silicon wafer lifting ring;

[0040] Step S34: controlling the retractable inner diameter of the silicon wafer lifting ring to shrink to a second inner diameter that is smaller than the diameter of the silicon wafer;

[0041] Step S35: controlling the silicon wafer lifting ring to rise until the silicon wafer is supported by the silicon wafer lifting ring and the support column is separated from the silicon wafer;

[0042] Step S36: the heating platform is stationary, and the silicon wafer lifting ring drives the silicon wafer to rotate to a preset angle; or, the silicon wafer lifting ring and the silicon wafer are stationary, and the heating platform rotates to a preset angle;

[0043] Step S37: controlling the silicon wafer lifting ring to drive the silicon wafer to descend until the silicon wafer is supported by the supporting column, so that the silicon wafer is separated from the silicon wafer lifting ring;

[0044] Step S38: controlling the retractable inner diameter of the silicon wafer lifting ring to expand to a first inner diameter that is larger than the diameter of the silicon wafer and the diameter of the heating platform;

[0045] Step S39: Control the height of the silicon wafer and the support column to remain unchanged, and the heating platform rises until the silicon wafer is placed on the heating platform to implement the next thin film deposition.

[0046] Compared with the prior art, the present invention has at least one of the following beneficial effects:

[0047] 1. The design of the silicon wafer lifting ring of the present invention is different from the prior art. In the prior art, the inner diameter of the ceramic ring is smaller than the diameter of the silicon wafer in order to lift the silicon wafer for transmission. The ceramic ring is located between the heating platform and the silicon wafer. Therefore, the diameter of the heating platform in contact with the silicon wafer will be smaller than the diameter of the silicon wafer, and the effect of heat completely covering the entire silicon wafer cannot be achieved. Since the edge of the silicon wafer does not contact the heating platform, the temperature will be lower than the center of the silicon wafer. In the present invention, during the thin film deposition, the inner diameter of the silicon wafer lifting ring is larger than the diameter of the silicon wafer and the heating platform, and the heat of the heating platform to the edge of the silicon wafer is not blocked by the silicon wafer lifting ring, so that the heat of the heating platform can cover the entire surface of the silicon wafer, ensuring the uniformity of the thickness of the silicon wafer thin film deposition.

[0048] 2. The present invention proposes a thin film deposition method, which solves the problem of uniformity of the deposited thin film inherent in the machine by adding a new type of silicon wafer lifting ring to rotate multiple times in the chamber and perform multiple depositions, without changing the original hardware of the machine, such as the structure of the shower head, the heating device of the heating table, the position of the exhaust port, etc., and does not reduce the thin film deposition rate.

[0049] 3. By installing a silicon wafer lifting ring with a variable inner diameter in the thin film deposition chamber, the position of the silicon wafer relative to the heating platform can be changed in the thin film deposition chamber, which not only ensures production efficiency but also improves the uniformity of thin film deposition thickness.

[0050] 4. By making the silicon wafer and the heating platform rotate relative to each other during the interval between two adjacent thin film depositions and performing thin film deposition multiple times, the problem of thin film deposition uniformity caused by the different reaction effects of the shower head on different areas of the silicon wafer can be eliminated, and the problem of thin film deposition uniformity caused by uneven temperature inside the heating platform can also be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] The preferred implementation modes will be described below in a clear and understandable manner with reference to the accompanying drawings to further illustrate the above-mentioned characteristics, technical features, advantages and implementation methods of the present invention.

[0052] Figure 1 is a schematic structural diagram of a thin film deposition device provided by an embodiment of the present application;

[0053] Figure 2 is a schematic top view of a silicon wafer lifting ring structure provided by an embodiment of the present application;

[0054] Figure 3 yes Figure 2 Schematic diagram of the cross-sectional structure along the aa direction;

[0055] Figure 4 yes Figure 2 Schematic diagram of the structure of the silicon wafer lifting ring when the inner diameter is reduced;

[0056] Figure 5 yes Figure 4 Schematic diagram of the cross-sectional structure along the bb direction;

[0057] Figure 6 This is a schematic diagram of the main steps of a thin film deposition method provided by an embodiment of the present application;

[0058] Fig. 7A This is a schematic diagram of the main steps of a thin film deposition method provided by an embodiment of the present application;

[0059] Figure 7B yes Fig. 7A Another embodiment of the thin film deposition method provided;

[0060] Figure 8 This is a schematic diagram of the main steps of a thin film deposition method provided by an embodiment of the present application;

[0061] Fig. 9 is a flow chart of a thin film deposition method provided by an embodiment of the present application;

[0062] Fig.10 is a flow chart of a thin film deposition method provided by an embodiment of the present application;

[0063] Fig.11 is a flow chart of a thin film deposition method provided by an embodiment of the present application;

[0064] Fig.12 is a schematic structural diagram of a thin film deposition device provided by an embodiment of the present application;

[0065] Fig.13 is a schematic structural diagram of a thin film deposition device provided by an embodiment of the present application;

[0066] Fig.14 This is a schematic diagram of the structure of a silicon wafer lifting ring provided by an embodiment of the present application;

[0067] Fig.15 yes Fig.14 Schematic diagram of the structure of the silicon wafer lifting ring when the inner diameter is reduced;

[0068] Fig.16 yes Fig.15 Schematic diagram of the cross-sectional structure along the cc direction;

[0069] Fig.17 yes Fig.16 Schematic diagram of the local structure at point d. DETAILED DESCRIPTION

[0070] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings and other implementation methods can be obtained based on these drawings without creative work.

[0071] In order to simplify the drawings, only the parts related to the invention are schematically shown in each figure, and they do not represent the actual structure of the product. In addition, in order to simplify the drawings and facilitate understanding, in some figures, only one of the parts with the same structure or function is schematically drawn or marked. In this article, "one" not only means "only one", but also means "more than one".

[0072] In this document, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0073] In addition, in the description of the present application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0074] [Example 1]

[0075] like Figures 1 to 5 , Figures 14 to 17 As shown, the first embodiment provides a silicon wafer lifting ring 120, which can be installed in the thin film deposition chamber 110 of the semiconductor thin film deposition equipment 100, and can also be used in the cleaning chamber of the semiconductor cleaning equipment, and other equipment that needs to carry silicon wafers. The central axes of the silicon wafer lifting ring 120, the silicon wafer 200 and the heating platform 130 located in the thin film deposition chamber 110 are preferably overlapped.

[0076] The main feature of the silicon wafer lifting ring 120 is that it has a retractable inner diameter, which will play an important role in the silicon wafer thin film deposition process.

[0077] In order to eliminate the influence of the intensity deviation of the reaction gas discharged from the shower head 160 to different areas and the temperature deviation of different areas of the heating stage 130 on the uniformity of the film deposition thickness on the surface of the silicon wafer in the thin film deposition equipment 100, in this embodiment, after the silicon wafer 200 completes a thin film deposition, the silicon wafer 200 is lifted and rotated relative to the heating stage 130 by a preset angle and then returned to the heating stage 130 for the next thin film deposition, thereby changing the circumferential process environment. The above process is repeated at least once, and the preset angle can be set to any angle such as 180 degrees, 90 degrees, 45 degrees, etc.

[0078] In the above process, it can be divided into two stages according to whether the silicon wafer 200 is in actual processing: 1. During the actual thin film deposition of the silicon wafer 200; 2. During the interval between two adjacent thin film depositions, the silicon wafer 200 is lifted or rotated to lift the silicon wafer. In order to prevent the silicon wafer lifting ring 120 from hindering the heat conduction between the edge of the heating platform 130 and the edge of the silicon wafer 200 during the thin film deposition, the present application expands the inner diameter of the silicon wafer lifting ring 120 to a first inner diameter D1201 larger than the diameter of the silicon wafer 200 and the diameter of the heating platform 130, so as to move outside the silicon wafer 200 and the heating platform 130 so as not to contact the silicon wafer 200 and the heating platform 130, that is, to prevent the silicon wafer lifting ring 120 from being retained between the silicon wafer 200 and the heating platform 130, affecting the heat conduction to the edge of the silicon wafer 200. Preferably, the silicon wafer lifting ring 120 can be moved below the heating platform 130, at which time the heating effects of the middle and edge of the heating platform 130 on the silicon wafer 200 can remain consistent; during the period of lifting the silicon wafer, in order to allow the silicon wafer 200 to be supported by the silicon wafer lifting ring 120, the present application shrinks the inner diameter of the silicon wafer lifting ring 120 to a second inner diameter D1202 that is smaller than the diameter of the silicon wafer 200, and moves it to the bottom of the silicon wafer 200 to lift the silicon wafer 200.

[0079] It can be seen from the above step description that the retractable inner diameter D120 of the wafer lifting ring 120 can be changed between the first inner diameter D1201 and the second inner diameter D1202.

[0080] Specifically, if Figures 2 to 5 , Figures 14 to 17 As shown, the silicon wafer lifting ring 120 includes a lifting ring body 121, a plurality of telescopic members 122, a transmission member 123 and a driving device 150. Figure 3 As shown, the lifting ring body 121, a plurality of telescopic parts 122 and a transmission part 123 are arranged in sequence from bottom to top. In order to ensure that the silicon wafer lifting ring 120 can move up and down unhindered in the contracted state, the lifting ring body 121 is annular in structure, having a third inner diameter D121 greater than the diameter of the silicon wafer 200 and the heating platform 130, and the third inner diameter D121 is less than or equal to the first inner diameter D1201. A plurality of telescopic parts 122 are slidably connected to the lifting ring body 121, and are distributed in a ring shape, and together surround the inner diameter of the silicon wafer lifting ring 120. As shown in FIG. Figure 2 As shown, the diameter of the inscribed circle of the plurality of telescopic members 122 is used as the telescopic inner diameter D120 of the wafer lifting ring 120. In addition, the transmission member 123 is used as a member for changing the sliding state of the telescopic member 122. The transmission member 123 is in transmission connection with the telescopic member 122, and the transmission member 123 can apply a force to the telescopic member 122 along the radial direction of the lifting ring body 121, so that the telescopic member 122 slides toward the center of the lifting ring body 121, thereby changing the telescopic inner diameter D120 of the wafer lifting ring 120. The driving device 150 is used to drive the transmission member 123 and the lifting ring body 121. According to this embodiment, each telescopic member 122 can simultaneously slide toward the center of the lifting ring body 121 to reduce the telescopic inner diameter D120, or can slide away from the center of the lifting ring body 121 to expand the telescopic inner diameter D120.

[0081] The present application does not limit the number and position distribution of the telescopic members 122. Figure 2 As shown, the seven telescopic members 122 are evenly distributed on the upper surface of the circular ring of the lifting ring body 121 .

[0082] like Figure 2 , Figure 3 As shown in FIG. 1 , it is a schematic diagram of the structure of the wafer lifting ring 120 in a state where the retractable inner diameter D120 is not reduced. At this time, each retractable member 122 slides into the gap between the lifting ring body 121 and the transmission member 123 facing each other, and the retractable inner diameter D120 of the wafer lifting ring 120 is a first inner diameter D1201 that is larger than the diameter of the wafer 200 or the heating platform 130. Figure 4 , Figure 5 As shown, it is a structural schematic diagram of the silicon wafer lifting ring 120 in a state of reducing the retractable inner diameter D120. At this time, each retractable part 122 slides to the outside of the gap between the supporting ring body 121 and the transmission part 123 on the opposite side. The retractable inner diameter D120 of the silicon wafer lifting ring 120 is a second inner diameter D1202 smaller than the diameter of the silicon wafer 200.

[0083] refer to Figure 3 and Figure 5As shown, as an embodiment of the above-mentioned silicon wafer lifting ring 120, each telescopic member 122 can be designed as a sheet structure, and is respectively hingedly connected to the lifting ring body 121 through a hinge shaft 126, and the hinge shaft 126 is consistent with the thickness direction of the lifting ring body 121, so that each telescopic member 122 can rotate toward the center of the lifting ring body 121 within the plane where the lifting ring body 121 is located. In addition, the surface of the telescopic member 122 is provided with a convex portion 124 connected to the transmission member 123. The transmission member 123 is configured as an annular structure that can rotate coaxially relative to the lifting ring body 121. A plurality of sliding grooves 125 are provided on the surface of the transmission member 123, and each convex portion 124 can be slidably located in the sliding groove 125, and when the transmission member 123 is rotated, the sliding groove 125 can generate a force on the convex portion 124 to make the telescopic member 122 slide radially along the lifting ring body 121.

[0084] like Figure 2 and Figure 4 As shown, the sliding groove 125 is arc-shaped, gradually extending outward from the center of the transmission member 123, and each sliding groove 125 is rotationally symmetrically arranged around the center of the transmission member 123. The protrusion 124 is cylindrical, and its diameter is slightly smaller than the width of the sliding groove 125, so that during the rotation of the transmission member 123, the inner side of the sliding groove 125 (the side toward the central axis of the lifting ring body 121) can exert a force on the side of the protrusion 124.

[0085] In addition, as another embodiment of the above-mentioned silicon wafer lifting ring 120, a sliding groove 125 can be provided on the surface of the telescopic member 122 (the side facing the transmission member 123), and a convex portion 124 matching with the sliding groove 125 can be provided on the side of the transmission member 123 facing the telescopic member 122. That is, the sliding groove 125 is provided on the surface of the telescopic member 122, the transmission member 123 is configured as an annular structure that can rotate coaxially relative to the lifting ring body 121, and a plurality of convex portions 124 are provided on the surface of the transmission member 123, each convex portion 124 is slidably located in the sliding groove 125, and the rotating transmission member 123 can cause the convex portion 124 to generate a force on the sliding groove 125 to make the telescopic member 122 slide radially along the lifting ring body 121.

[0086] It should be noted that the silicon wafer lifting ring 120 can be used in conjunction with the silicon wafer lifting ring 120 in the embodiment of the present invention. Figure 1 The telescopic member 122 and the lifting ring body 121 are made of ceramic materials with the same or similar thermal expansion coefficients, so that during the heating of the heating platform 130, the deformation of the telescopic member 122 and the lifting ring body 121 is kept consistent, thereby reducing the influence of temperature changes on the matching accuracy between the components.

[0087] like Figure 3 and Figure 5As shown, the driving device 150 includes a first gear 151, a second gear 152, a first motor 153 and a second motor 154. The first gear 151 is mounted on the first motor 153, and the first gear 151 is meshed with the outer side of the transmission member 123, and is used to drive the transmission member 123 to rotate, so that the telescopic member 122 slides toward or away from the center of the lifting ring body 121, thereby changing the telescopic inner diameter D120 of the silicon wafer lifting ring 120. The second gear 152 is mounted on the second motor 154, and the second gear 152 is meshed with the outer side of the lifting ring body 121, and is used to drive the lifting ring body 121 to rotate, so that the silicon wafer lifting ring 120 rotates as a whole, so that the silicon wafer 200 can rotate relative to the heating platform 130. In addition, as Fig.16 The first motor 153 and the second motor 154 are installed below the first gear 151 and the second gear 152; Fig.17 In the embodiment, the first motor 153 and the second motor 154 are installed on the sides of the first gear 151 and the second gear 152.

[0088] [Example 2]

[0089] like Figure 1 , Fig.12 and Fig.13 As shown, the second embodiment provides a thin film deposition device 100, which mainly includes a thin film deposition chamber 110, and a shower head 160, a silicon wafer lifting ring 120, a heating platform 130 and a support column 140 located in the thin film deposition chamber 110. The thin film deposition device 100 is preferably a plasma enhanced chemical vapor deposition device (PECVD).

[0090] Specifically, the heating platform 130 is used to support the silicon wafer 200 and adjust the temperature of the silicon wafer 200 during the thin film deposition. The reaction gas enters the thin film deposition chamber 110 through the shower head 160 located directly above the heating platform 130, and forms plasma under the action of radio frequency. The reaction ions migrate to the surface of the silicon wafer 200 to react and form a silicide film. The silicon wafer lifting ring 120 can adopt any of the structural forms in the above-mentioned embodiment one.

[0091] Preferably, the support column 140 is arranged to be lifted and lowered through the thickness direction of the heating platform 130, and is used to support the silicon wafer 200. In addition, the driving device 150 also includes a heating platform driving device 131 and a support column driving device (not shown in the figure), the heating platform driving device 131 is used to drive the heating platform 130 to rotate or rise, and the support column driving device is used to drive the support column 140 to rise and fall. The support column 140 can work with the silicon wafer lifting ring 120 during the thin film deposition process of the silicon wafer 200, and its specific working principle will be introduced in the subsequent embodiments.

[0092] [Example 3]

[0093] like Figure 6and Fig. 9 , which is a flow chart and main step schematic diagram of a thin film deposition method provided in Example 3. In this embodiment, the height of the wafer lifting ring 120 is kept unchanged, and the heating platform 130 moves up and down; the heating platform 130 does not rotate, and the wafer lifting ring 120 drives the wafer 200 to rotate to a preset angle, or the wafer lifting ring 120 does not rotate, and the heating platform 130 rotates to a preset angle.

[0094] Specifically, the thin film deposition method provided in this embodiment includes the following steps:

[0095] Step S10: The heating platform 130 is raised and lowered below the wafer lifting ring 120 , the support column 140 passes through the heating platform 130 and rises to be higher than the wafer lifting ring 120 , the robot moves the silicon wafer 200 into the thin film deposition chamber 110 , and the silicon wafer 200 is supported by the support column 140 ;

[0096] Step S11: The height of the support column 140 remains unchanged, and the heating platform 130 rises to place the silicon wafer 200 on the heating platform 130;

[0097] Step S12: inputting reaction gas through the shower head 160 to perform a thin film deposition;

[0098] Step S13: Control the support column 140 and the silicon wafer 200 to maintain a constant height, and the heating platform 130 is lowered to be lower than the silicon wafer lifting ring 120;

[0099] Step S14: controlling the retractable inner diameter of the silicon wafer lifting ring 120 to decrease to a second inner diameter D1202 which is smaller than the diameter of the silicon wafer 200;

[0100] Step S15: Control the support column 140 to drive the silicon wafer 200 to descend until the silicon wafer 200 is supported by the silicon wafer lifting ring 120 and the support column 140 is separated from the silicon wafer 200;

[0101] Step S16: the heating platform 130 is stationary, and the silicon wafer lifting ring 120 drives the silicon wafer 200 to rotate to a preset angle; or, the silicon wafer lifting ring 120 carrying the silicon wafer 200 is stationary, and the heating platform 130 rotates to a preset angle;

[0102] Step S17: controlling the support column 140 to rise until the silicon wafer 200 is lifted from the silicon wafer lifting ring 120;

[0103] Step S18: controlling the retractable inner diameter of the wafer lifting ring 120 to expand to a first inner diameter D1201 that is larger than the diameter of the wafer 200 and the diameter of the heating platform 130;

[0104] Step S19: Control the support pillars 140 and the silicon wafer 200 to maintain a constant height, and the heating platform 130 rises until the silicon wafer 200 is placed on the heating platform 130 to perform the next thin film deposition.

[0105] In step S14, the driving device 150 can be used to drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate, so that the multiple telescopic members 122 slide toward the center of the lifting ring body 121 to reduce the telescopic inner diameter of the silicon wafer lifting ring 120; in step S18, the driving device 150 can be used to drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate in the opposite direction, so that the multiple telescopic members 122 slide away from the center of the lifting ring body 121 to expand the telescopic inner diameter of the silicon wafer lifting ring 120.

[0106] It should be noted that, in the drawings of this embodiment, the transmission member 123 in step S14 rotates clockwise, and the transmission member 123 in step S18 rotates counterclockwise. The opposite rotation scheme may also be adopted according to the specific structure of the silicon wafer lifting ring 120.

[0107] [Example 4]

[0108] like Fig. 7A , Figure 7B and Fig.10 As shown, a flow chart of a thin film deposition method and a schematic diagram of main steps provided in Example 4 are shown.

[0109] Specifically, the thin film deposition method provided in this embodiment includes the following steps:

[0110] Step S20: The silicon wafer lifting ring 120 is raised and lowered below the heating platform 130 , the support column 140 passes through the heating platform 130 and rises to be higher than the heating platform 130 , the robot moves the silicon wafer 200 into the thin film deposition chamber 110 , and the silicon wafer 200 is supported by the support column 140 ;

[0111] Step S21: Fig. 7A The height of the heating platform 130 shown in FIG. 1 remains unchanged, and the support column 140 is lowered so that the silicon wafer 200 is placed on the heating platform 130, or, as shown in FIG. Figure 7B The height of the support column 140 shown remains unchanged, and the heating platform 130 rises so that the silicon wafer 200 is placed on the heating platform 130;

[0112] Step S22: inputting reaction gas through the shower head 160 to perform a thin film deposition;

[0113] Step S23: Fig. 7A As shown, the control support column 140 drives the silicon wafer 200 to rise, and the silicon wafer lifting ring 120 rises to between the silicon wafer 200 and the heating platform 130, or, as shown in FIG. Figure 7BAs shown, the support column 140 supports the silicon wafer 200, the heating platform 130 descends, and the silicon wafer lifting ring 120 rises to between the silicon wafer 200 and the heating platform 130. During this step, the heating platform 130 passes through the inner ring of the silicon wafer lifting ring 120;

[0114] Step S24: controlling the retractable inner diameter of the wafer lifting ring 120 to decrease to a second inner diameter D1202 which is smaller than the diameter of the wafer 200;

[0115] Step S25: Fig. 7A As shown, the control support column 140 drives the silicon wafer 200 to descend until the silicon wafer 200 is supported by the silicon wafer lifting ring 120 and the support column 140 is separated from the silicon wafer 200, or, as shown in FIG. Figure 7B The silicon wafer lifting ring 120 is shown rising until it lifts the silicon wafer 200 and drives the silicon wafer 200 to continue rising, and the support column 140 is separated from the silicon wafer 200;

[0116] Step S26: the heating platform 130 is stationary, and the silicon wafer lifting ring 120 drives the silicon wafer 200 to rotate to a preset angle; or the silicon wafer lifting ring 120 and the silicon wafer 200 are stationary, and the heating platform 130 rotates to a preset angle;

[0117] Step S27: Fig. 7A As shown in FIG. 1 , the control support column 140 is raised until the silicon wafer 200 is lifted from the silicon wafer lifting ring 120, or as shown in FIG. Figure 7B As shown, the silicon wafer lifting ring 120 is controlled to descend until the support column 140 lifts the silicon wafer 200 from the silicon wafer lifting ring 120;

[0118] Step S28: controlling the retractable inner diameter of the wafer lifting ring 120 to expand to a first inner diameter D1201 that is larger than the diameter of the wafer 200 and the diameter of the heating platform 130;

[0119] Step S29: Fig. 7A As shown in FIG. 1 , the silicon wafer lifting ring 120 is controlled to move to the bottom of the heating platform 130, and the support column 140 drives the silicon wafer 200 to descend, or, as shown in FIG. Figure 7B The heating stage 130 is shown rising until the silicon wafer 200 is placed on the heating stage 130 to perform the next thin film deposition.

[0120] In step S24, the driving device 150 can be used to drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate, so that the multiple telescopic members 122 slide toward the center of the lifting ring body 121 to reduce the telescopic inner diameter of the silicon wafer lifting ring 120; in step S28, the driving device 150 can be used to drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate in the opposite direction, so that the multiple telescopic members 122 slide away from the center of the lifting ring body 121 to expand the telescopic inner diameter of the silicon wafer lifting ring 120.

[0121] It should be noted that, in the drawings of this embodiment, the transmission member 123 in step S24 rotates clockwise, and the transmission member 123 in step S28 rotates counterclockwise. The opposite rotation scheme may also be adopted according to the specific structure of the silicon wafer lifting ring 120.

[0122] [Example 5]

[0123] like Figure 8 and Fig.11 As shown, a flow chart of a thin film deposition method and a schematic diagram of main steps provided in Example 5 are shown.

[0124] Specifically, the thin film deposition method provided in this embodiment includes the following steps:

[0125] Step S30: The heating platform 130 is raised and lowered below the wafer lifting ring 120 , the support column 140 passes through the heating platform 130 and rises to a position higher than the wafer lifting ring 120 , the robot moves the wafer 200 into the thin film deposition chamber 110 , and the wafer 200 is supported by the support column 140 ;

[0126] Step S31: The height of the support column 140 remains unchanged, and the heating platform 130 rises to place the silicon wafer 200 on the heating platform 130;

[0127] Step S32: inputting reaction gas through the shower head 160 to perform a thin film deposition;

[0128] Step S33: Control the support column 140 and the silicon wafer 200 to maintain a constant height, and the heating platform 130 is lowered to be lower than the silicon wafer lifting ring 120;

[0129] Step S34: Control the retractable inner diameter of the silicon wafer lifting ring 120 to shrink to a second inner diameter D1202 that is smaller than the diameter of the silicon wafer 200;

[0130] Step S35: controlling the silicon wafer lifting ring 120 to rise until the silicon wafer 200 is supported by the silicon wafer lifting ring 120 and the support column 140 is separated from the silicon wafer 200;

[0131] Step S36: the heating platform 130 is stationary, and the silicon wafer lifting ring 120 drives the silicon wafer 200 to rotate to a preset angle; or, the silicon wafer lifting ring 120 and the silicon wafer 200 are stationary, and the heating platform 130 is rotated to a preset angle;

[0132] Step S37: Control the silicon wafer lifting ring 120 to drive the silicon wafer 200 to descend until the silicon wafer 200 is supported by the supporting column 140, so that the silicon wafer 200 is separated from the silicon wafer lifting ring 120;

[0133] Step S38: controlling the retractable inner diameter of the wafer lifting ring 120 to expand to a first inner diameter D1201 that is larger than the diameter of the wafer 200 and the diameter of the heating platform 130;

[0134] Step S39: Control the silicon wafer 200 and the support column 140 to maintain a constant height, and the heating platform 130 rises until the silicon wafer 200 is placed on the heating platform 130 to perform the next thin film deposition.

[0135] In step S34, the driving device 150 can be used to drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate, so that the multiple telescopic members 122 slide toward the center of the lifting ring body 121 to reduce the telescopic inner diameter of the silicon wafer lifting ring 120; in step S38, the driving device 150 can be used to drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate in the opposite direction, so that the multiple telescopic members 122 slide away from the center of the lifting ring body 121 to expand the telescopic inner diameter of the silicon wafer lifting ring 120.

[0136] It should be noted that, in the drawings of this embodiment, the transmission member 123 in step S34 rotates clockwise, and the transmission member 123 in step S38 rotates counterclockwise. The opposite rotation scheme may also be adopted according to the specific structure of the silicon wafer lifting ring 120.

[0137] The above embodiments can be freely combined as needed. The above are only preferred embodiments of the present invention. For ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered as the protection scope of the present invention.

Claims

1. A silicon wafer lifting ring, which can be installed in a thin film deposition chamber, wherein a heating platform for carrying a silicon wafer for thin film deposition is provided in the thin film deposition chamber, characterized in that: The silicon wafer lifting ring has a retractable inner diameter; During thin film deposition, the wafer lifting ring is configured such that: the retractable inner diameter expands to a first inner diameter that is larger than the diameter of the wafer and the diameter of the heating stage, and does not contact the wafer and the heating stage; During lifting of the silicon wafer, the silicon wafer lifting ring is configured such that the first inner diameter is contracted to a second inner diameter smaller than the diameter of the silicon wafer, and is moved to the bottom of the silicon wafer to lift the silicon wafer.

2. The silicon wafer lifting ring according to claim 1, characterized in that: include: A lifting ring body, wherein the lifting ring body is an annular structure having a third inner diameter, and the third inner diameter is larger than the diameter of the silicon wafer and the diameter of the heating platform; A plurality of telescopic members are slidably connected to the lifting ring body and are distributed in a ring shape, and the diameter of the inscribed circle of the plurality of telescopic members serves as the telescopic inner diameter; a transmission member, which is in transmission connection with the telescopic member, and can apply a force to the telescopic member in the radial direction of the lifting ring body, so that the telescopic member slides toward or away from the center of the lifting ring body, thereby changing the telescopic inner diameter; The driving device is used to drive the transmission member and the lifting ring body to rotate.

3. The silicon wafer lifting ring according to claim 2, characterized in that: The telescopic member is hingedly connected to the lifting ring body, and a plurality of convex parts are provided on the surface of the telescopic member; The transmission member is configured as an annular structure that can rotate coaxially relative to the lifting ring body, the telescopic member is located between the lifting ring body and the transmission member, and a plurality of sliding grooves are opened on the surface of the transmission member, and each of the convex parts can be slidably arranged in the corresponding sliding groove. When the transmission member is driven to rotate, the sliding groove exerts a force on the convex part to make the telescopic member slide radially along the lifting ring body.

4. The silicon wafer lifting ring according to claim 2, characterized in that: The telescopic member is hingedly connected to the lifting ring body, and a sliding groove is provided on the surface of the telescopic member; The transmission member is configured as an annular structure that can rotate coaxially relative to the lifting ring body, the telescopic member is located between the lifting ring body and the transmission member, and a plurality of protrusions are provided on the surface of the transmission member, each of the protrusions can be slidably arranged in the corresponding sliding groove, when the transmission member is driven to rotate, the protrusions exert a force on the sliding groove to cause the telescopic member to slide radially along the lifting ring body.

5. The silicon wafer lifting ring according to any one of claims 2 to 4, characterized in that: The telescopic member and the lifting ring body are formed of a ceramic material having the same thermal expansion coefficient.

6. A thin film deposition device, characterized in that: The silicon wafer lifting ring according to any one of claims 1 to 5 further comprises: a thin film deposition chamber for accommodating a silicon wafer; A heating stage, located in the thin film deposition chamber; A shower head, located above the heating platform, for inputting reaction gas into the thin film deposition chamber; A plurality of supporting columns are used to support the silicon wafer.

7. The thin film deposition device according to claim 6, characterized in that: The thin film deposition equipment is a plasma enhanced chemical vapor deposition equipment.

8. A thin film deposition method, characterized in that: The thin film deposition device according to claim 6 or 7 comprises: Step S10: the heating platform is raised and lowered below the silicon wafer lifting ring, the support column passes through the heating platform and rises to be higher than the silicon wafer lifting ring, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column; Step S11: the height of the support column remains unchanged, and the heating platform rises to place the silicon wafer on the heating platform; Step S12: inputting reaction gas through the shower head to perform a thin film deposition; Step S13: Control the support column and the silicon wafer to maintain a constant height, and the heating platform is lowered to be lower than the silicon wafer lifting ring; Step S14: controlling the retractable inner diameter of the silicon wafer lifting ring to decrease to a second inner diameter that is smaller than the diameter of the silicon wafer; Step S15: controlling the support column to drive the silicon wafer to descend until the silicon wafer is supported by the silicon wafer lifting ring and the support column is separated from the silicon wafer; Step S16: the heating platform is stationary, and the silicon wafer lifting ring drives the silicon wafer to rotate to a preset angle; or, the silicon wafer lifting ring carrying the silicon wafer is stationary, and the heating platform is rotated to a preset angle; Step S17: controlling the support column to rise until the silicon wafer is lifted off the silicon wafer lifting ring; Step S18: controlling the retractable inner diameter of the silicon wafer lifting ring to expand to a first inner diameter that is larger than the diameter of the silicon wafer and the diameter of the heating platform; Step S19: controlling the support column and the silicon wafer to maintain a constant height, and the heating platform rises until the silicon wafer is placed on the heating platform to perform the next thin film deposition.

9. A thin film deposition method, characterized in that: The thin film deposition device according to claim 6 or 7 comprises: Step S20: the silicon wafer lifting ring is lifted and lowered below the heating platform, the support column passes through the heating platform and rises to a position higher than the heating platform, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column; Step S21: the height of the heating platform remains unchanged and the support pillars are lowered so that the silicon wafer is placed on the heating platform, or the height of the support pillars remains unchanged and the heating platform is raised so that the silicon wafer is placed on the heating platform; Step S22: inputting reaction gas through the shower head to perform a thin film deposition; Step S23: controlling the support column to drive the silicon wafer to rise, and the silicon wafer lifting ring rises to between the silicon wafer and the heating platform, or the support column supports the silicon wafer, the heating platform descends, and the silicon wafer lifting ring rises to between the silicon wafer and the heating platform; Step S24: controlling the retractable inner diameter of the silicon wafer lifting ring to decrease to a second inner diameter that is smaller than the diameter of the silicon wafer; Step S25: controlling the support column to drive the silicon wafer downward until the silicon wafer is supported by the silicon wafer lifting ring and the support column is separated from the silicon wafer, or the silicon wafer lifting ring rises until the silicon wafer is lifted and driven to continue to rise and the support column is separated from the silicon wafer; Step S26: the heating platform is stationary, and the silicon wafer lifting ring drives the silicon wafer to rotate to a preset angle; or, the silicon wafer lifting ring and the silicon wafer are stationary, and the heating platform rotates to a preset angle; Step S27: controlling the support column to rise until the silicon wafer is lifted from the silicon wafer lifting ring, or controlling the silicon wafer lifting ring to descend until the support column lifts the silicon wafer from the silicon wafer lifting ring; Step S28: controlling the retractable inner diameter of the silicon wafer lifting ring to expand to a first inner diameter that is larger than the diameter of the silicon wafer and the diameter of the heating platform; Step S29: Control the silicon wafer lifting ring to move to the bottom of the heating platform, and the support column drives the silicon wafer to descend or the heating platform to ascend, until the silicon wafer is placed on the heating platform to implement the next thin film deposition.

10. A thin film deposition method, characterized in that: The thin film deposition device according to claim 6 or 7 comprises: Step S30: the heating platform is raised and lowered below the silicon wafer lifting ring, the support column passes through the heating platform and rises to be higher than the silicon wafer lifting ring, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column; Step S31: the height of the support column remains unchanged, and the heating platform rises to place the silicon wafer on the heating platform; Step S32: inputting reaction gas through the shower head to perform a thin film deposition; Step S33: controlling the support column and the silicon wafer to maintain a constant height, and the heating platform is lowered to be lower than the silicon wafer lifting ring; Step S34: controlling the retractable inner diameter of the silicon wafer lifting ring to shrink to a second inner diameter that is smaller than the diameter of the silicon wafer; Step S35: controlling the silicon wafer lifting ring to rise until the silicon wafer is supported by the silicon wafer lifting ring and the support column is separated from the silicon wafer; Step S36: the heating platform is stationary, and the silicon wafer lifting ring drives the silicon wafer to rotate to a preset angle; or, the silicon wafer lifting ring and the silicon wafer are stationary, and the heating platform rotates to a preset angle; Step S37: controlling the silicon wafer lifting ring to drive the silicon wafer to descend until the silicon wafer is supported by the supporting column, so that the silicon wafer is separated from the silicon wafer lifting ring; Step S38: controlling the retractable inner diameter of the silicon wafer lifting ring to expand to a first inner diameter that is larger than the diameter of the silicon wafer and the diameter of the heating platform; Step S39: Control the height of the silicon wafer and the support column to remain unchanged, and the heating platform rises until the silicon wafer is placed on the heating platform to implement the next thin film deposition.

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