High-Q-value miniaturized IPD band-pass filter chip and device

Abstract

The invention belongs to the technical field of passive radio frequency filters, and discloses a high-Q-value miniaturized IPD band-pass filter chip and a high-Q-value miniaturized IPD band-pass filter device. The filter chip comprises a circuit layer, a grounding end surrounding the circuit layer and a substrate, the circuit layer and the grounding end surrounding the circuit layer are arranged on the substrate, the circuit layer comprises a capacitance inductance resonator network, an input port and an output port, and the input port and the output port both adopt a ground-signal-ground structure. Through introduction of multiple zero points, stop-band suppression of the band-pass filter can be improved; the capacitor adopts an MIM plate capacitor, and is processed through a thin film deposition technology, so that high integration level and miniaturization can be realized, and the size of the filter is effectively reduced; the inductor element and the circuit are formed by depositing a thick metal material on the substrate, the thickness and the width of the inductor are increased, the practical problem that the Q value of a traditional plane IPD inductor is low is solved, the filtering function of the filter is improved, and circuit loss is reduced.

Description

Technical Field

[0001] The present invention mainly relates to the technical field of passive radio frequency filters, and in particular to a high-Q value miniaturized IPD bandpass filter chip and device. Background Art

[0002] As the fifth generation of mobile communication technology (5G) rapidly develops to high frequency bands, the demand for military microwave components is also changing. These components must not only adapt to higher frequencies, but also meet the requirements of low cost and miniaturization in modern military environments. Especially in the design of RF front-end modules, the demand for miniaturization, lightweight, high performance and high reliability has become increasingly prominent. As an indispensable passive component in communication circuits, filters play a key role in frequency selection and interference suppression, and their performance directly affects the communication quality of the entire system. Therefore, how to design high-Q, low-cost miniaturized IPD filters, especially in the research of high-Q inductors, is a key issue that needs to be solved urgently.

[0003] IPD technology is the core of RF front-end passive components and advanced packaging such as glass-based and silicon-based. It can effectively meet the requirements of filter miniaturization and meet the needs of modern communication systems. At present, there is no research on miniaturized, low insertion loss and high Q value thick film IPD bandpass filters designed specifically for 5G mobile communications. Summary of the invention

[0004] The purpose of the present invention is to provide a high-Q value miniaturized IPD bandpass filter chip and device, and to develop a high-Q value IPD filter group by combining passive components such as inductors and capacitors, aiming to replace the larger MEMS filter group.

[0005] To achieve the above object, the present invention provides a high-Q-value miniaturized IPD bandpass filter chip, comprising a circuit layer, a ground terminal surrounding the circuit layer, and a substrate, wherein the circuit layer and the ground terminal surrounding the circuit layer are arranged on the substrate; The circuit layer includes a capacitor-inductor resonator network and an input port and an output port both of which adopt a ground-signal-ground structure; The input port receives an input signal; The capacitor-inductor resonator network blocks signals outside the passband frequency range; The output port outputs a signal that is within the passband frequency range after being processed by the capacitor-inductor resonator network; The capacitor-inductor resonator network includes a first resonator, a second resonator, a third resonator, a fourth resonator and a fifth resonator. The five groups of resonators form a π-type connection structure. The third resonator is the center of the π-type connection structure. The second resonator and the fourth resonator connect the two ends of the third resonator. The first resonator is connected to the input port of the chip, and the fifth resonator is connected to the output port of the chip.

[0006] Furthermore, the capacitor in the capacitor-inductor resonator network is a MIM flat plate capacitor processed by thin film deposition technology, and the MIM flat plate capacitor includes an upper plate metal layer, a silicon nitride insulating layer and a lower plate metal layer; The inductor in the LC resonator network is formed by depositing thick copper on the substrate.

[0007] Further, the first resonator includes a first capacitor C1, a second capacitor C2 and a first inductor L1, the first capacitor C1 and the first inductor L1 are connected in parallel to form a first capacitor-inductor parallel resonant structure, one end of the first capacitor-inductor parallel resonant structure is connected to the input port of the chip as the input end of the first resonator, the other end of the first capacitor-inductor parallel resonant structure is connected to the upper plate metal layer of the second capacitor C2, and the lower plate metal layer of the second capacitor C2 is the output end of the first resonator; The second resonator includes a third capacitor C3, a fourth capacitor C4 and a second inductor L2, the third capacitor C3 and the second inductor L2 are connected in series to form a second capacitor-inductor series resonant structure, the fourth capacitor C4 is a grounding capacitor, and two ends of the second capacitor-inductor series resonant structure and two ends of the fourth capacitor C4 are connected in parallel; The third resonator includes a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7 and a third inductor L3, the sixth capacitor C6 and the third inductor L3 are connected in parallel to form a third capacitor-inductor parallel resonant structure, the lower plate metal layer of the fifth capacitor C5 is the input end of the third resonator, the upper plate metal layer of the fifth capacitor C5 is connected to one end of the third capacitor-inductor parallel resonant structure, the other end of the third capacitor-inductor parallel resonant structure is connected to the upper plate metal layer of the seventh capacitor C7, and the lower plate metal layer of the seventh capacitor C7 is the output end of the third resonator; The fourth resonator includes an eighth capacitor C8, a ninth capacitor C9 and a fourth inductor L4, the eighth capacitor C8 and the fourth inductor L4 are connected in series to form a fourth capacitor-inductor series resonant structure, the ninth capacitor C9 is a grounding capacitor, and two ends of the fourth capacitor-inductor series resonant structure are connected in parallel with two ends of the ninth capacitor C9; The fifth resonator includes a tenth capacitor C10, an eleventh capacitor C11 and a fifth inductor L5. The eleventh capacitor C11 and the fifth inductor L5 are connected in parallel to form a fifth capacitor-inductor parallel resonant structure. The lower plate metal layer of the tenth capacitor C10 is the input end of the fifth resonator, the upper plate metal layer of the tenth capacitor C10 is connected to one end of the fifth capacitor-inductor parallel resonant structure, and the other end of the fifth capacitor-inductor parallel resonant structure is the output end of the fifth resonator and is connected to the output port of the chip.

[0008] Further, the capacitance value and the inductance value in the first resonator are respectively equal to the capacitance value and the inductance value in the fifth resonator; The capacitance value and the inductance value in the second resonator are respectively equal to the capacitance value and the inductance value in the fourth resonator; The capacitance value of the fifth capacitor C5 is equal to the capacitance value of the seventh capacitor C7.

[0009] Furthermore, the five groups of resonators form a π-type connection structure which is an axisymmetric structure with symmetric positions; The first resonator and the fifth resonator are in an axisymmetric structure with respect to the third resonator; The second resonator and the fourth resonator are in an axisymmetric structure with respect to the third resonator.

[0010] Furthermore, the applicable frequency band of the filter is 5 GHz-13 GHz, the inductance value in the capacitor-inductor resonator network is in the range of 0.1 nH-10 nH, and the capacitance value is in the range of 0.1 pF-10 pF.

[0011] Furthermore, on the substrate, a closed grounding metal frame is arranged around the filter chip, and the grounding metal frame connects the grounding end of the input port, the grounding end of the output port, the grounding end of the second resonator and the grounding end of the fourth resonator.

[0012] Furthermore, the substrate is made of glass.

[0013] To achieve the above object, the present invention further provides a high-Q value miniaturized IPD bandpass filter device, comprising a high-Q value miniaturized IPD bandpass filter chip as described in any one of the above invention contents.

[0014] Beneficial effects: The present invention provides a high-Q value miniaturized IPD bandpass filter chip and device, each parallel resonance unit can generate a zero point outside the high frequency band, and each series resonance unit can generate a zero point outside the low frequency band. By introducing multiple zero points, the stopband suppression of the bandpass filter can be improved; the capacitor adopts MIM flat capacitor and is processed by thin film deposition technology to achieve high integration and miniaturization, thereby effectively reducing the size of the filter; the inductor elements and circuits are formed by depositing thick metal materials on the substrate to increase the thickness and width of the inductor, thereby solving the practical problem of low Q value of traditional planar IPD inductors, improving the filtering function of the filter, and reducing circuit losses. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 1 is a circuit schematic diagram of a high-Q value miniaturized IPD bandpass filter chip according to an embodiment of the present invention; Figure 2 It is a high-Q value miniaturized IPD bandpass filter chip integrated circuit layout involved in an embodiment of the present invention; Figure 3 It is a schematic diagram of the structure of a traditional planar spiral inductor; Figure 4is a schematic structural diagram of a novel planar inductor based on thick copper technology involved in an embodiment of the present invention; Figure 5 This is the relationship between frequency and Q value of traditional inductors; Figure 6 This is the frequency and Q value relationship diagram of thick copper inductor; Figure 7 It is an electromagnetic simulation result diagram of a high-Q value miniaturized IPD bandpass filter chip integrated circuit layout with a simulation frequency band of 5-6 GHz involved in an embodiment of the present invention.

[0017] Description of reference numerals: Among them: C1 is the first capacitor; C2 is the second capacitor; C3 is the third capacitor; C4 is the fourth capacitor; C5 is the fifth capacitor; C6 is the sixth capacitor; C7 is the seventh capacitor; C8 is the eighth capacitor; C9 is the ninth capacitor; C10 is the tenth capacitor; C11 is the eleventh capacitor; L1 is the first inductor; L2 is the second inductor; L3 is the third inductor; L4 is the fourth inductor; L5 is the fifth inductor: G is the ground terminal; S is the signal terminal; GND1 is the ground terminal; GND2 is the ground terminal; GND3 is the ground terminal; GND4 is the ground terminal. DETAILED DESCRIPTION

[0018] The preferred structure and implementation method of the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. Figures 1 to 7 As shown, the present invention provides a high-Q value miniaturized IPD bandpass filter chip and device. Example 1

[0019] like Figure 1 and Figure 2 As shown, the embodiment of the present invention provides a high-Q value miniaturized IPD bandpass filter chip, which works in the 5G communication band and is different from the conventional thin-film IPD filter structure, including: mainly composed of a circuit layer, a grounding ring surrounding the circuit layer and a glass dielectric substrate, and the circuit layer and the grounding ring surrounding the circuit layer are placed on the glass dielectric substrate. The circuit layer includes an input port, an output port and a capacitor-inductor resonator network connecting the two; The capacitor-inductor resonator network includes: five groups of capacitor-inductor resonators, the five groups of capacitor-inductor resonators form a p-type connection structure, the third resonator in the five groups of capacitor-inductor resonators serves as the center of the p-type connection structure, the second resonator and the fourth resonator in the five groups of capacitor-inductor resonators connect the two ends of the center of the p-type connection structure, the first resonator is connected to the input port of the chip, and the fifth resonator is connected to the output port of the chip.

[0020] In the embodiment of the present invention, each resonator includes an LC parallel resonant structure, an LC series resonant structure, a plurality of series capacitors, and a plurality of parallel ground capacitors. The LC parallel resonant structure and the LC series resonant structure introduce a transmission zero point in the stop band, and by adjusting the inductance value and the capacitance value in the resonant structure, the position of the transmission zero point in the stop band is changed to achieve higher out-of-band suppression.

[0021] In the embodiment of the present invention, the first resonator includes a first capacitor C1, a second capacitor C2 and a first inductor L1. The first capacitor C1 and the first inductor L1 form a first LC parallel resonant structure, one end of which is connected to the input port of the chip as the input end of the first resonator, and the other end is connected to the second capacitor C2. The other end of the second capacitor C2 is the output end of the first resonator. The first capacitor C1 and the first inductor L1 connected in parallel form a resonant circuit, and a zero point is generated at the high frequency 7.78GHz outside the passband, thereby improving the selectivity of the filter.

[0022] The second resonator includes a third capacitor C3, a fourth capacitor C4 and a second inductor L2. The third capacitor C3 and the second inductor L2 form a second LC series resonant structure that is grounded. The fourth capacitor C4 is a grounded capacitor. The two ends of the second LC series resonant structure are connected in parallel to the two ends of the fourth capacitor C4. The third capacitor C3 and the second inductor L2 that are connected in series to ground in the second resonator are used to generate a zero point at the 3.56GHz position outside the passband, thereby improving the low-frequency suppression capability outside the band.

[0023] The third resonator includes a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7 and a third inductor L3, one end of the fifth capacitor C5 is the input end of the third resonator, and the other end is connected to one end of a third LC parallel resonant structure composed of the sixth capacitor C6 and the third inductor L3, the other end of the third LC parallel resonant structure is connected to the seventh capacitor C7, and the other end of the seventh capacitor C7 is the output end of the third resonator. The sixth capacitor C6 and the third inductor L3 connected in parallel form a resonant circuit, and a zero point is generated at a high frequency of 7.26GHz outside the passband to improve the selectivity of the filter.

[0024] The fourth resonator includes an eighth capacitor C8, a ninth capacitor C9 and a fourth inductor L4, the eighth capacitor C8 and the fourth inductor L4 form a fourth LC series resonant structure grounded, the ninth capacitor C9 is a grounded capacitor, and both ends of the fourth LC series resonant structure are connected to both ends of the ninth capacitor C9. By using the eighth capacitor C8 and the fourth capacitor L4 connected in series to ground in the fourth resonator, a zero point is generated at the 3.56 GHz position outside the passband, thereby improving the out-of-band low-frequency suppression capability.

[0025] The fifth resonator includes a tenth capacitor C10, an eleventh capacitor C11 and a fifth inductor L5, one end of the tenth capacitor C10 is the input end of the fifth resonator, and the other end is connected to a fifth LC parallel resonant structure composed of the eleventh capacitor C11 and the fifth inductor L5, and the other end of the fifth LC parallel resonant structure is the output end of the fifth resonator and is connected to the output port of the chip. The eleventh capacitor C11 and the fifth inductor L5 connected in parallel form a resonant circuit, generating a zero point at a high frequency of 7.78 GHz outside the passband, thereby improving the selectivity of the filter.

[0026] The input port of the chip is used for inputting voltage and current signals, and is connected to the input end of the first resonator; the output port of the chip is used for outputting voltage and current signals filtered by the capacitor and inductor resonator network, and is connected to the output end of the fifth resonator; the input port and the output port both adopt a GSG structure, that is, a ground-signal-ground structure. Example 2

[0027] This embodiment has the same basic connection method as Embodiment 1, except that the p-type connection structure formed by the five groups of capacitors and inductors is a symmetrical structure with symmetric position. As an example, the third resonator in the five groups of capacitors and inductors is the center of the p-type connection structure, the fifth capacitor C5 and the seventh capacitor C7 of the third resonator are axially symmetrical, the first resonator at the input port and the fifth resonator at the output port are axially symmetrical, the second resonator connected in parallel between the first resonator and the third resonator and the fourth resonator connected in parallel between the third resonator and the fifth resonator are axially symmetrical. This symmetry does not require that the detailed structures of each component are completely consistent. For example, in this symmetrical design, the parameter values ​​of the components can be the same or different. Figure 1 For example, the inductance values ​​of L1 and L5 are equal, the capacitance values ​​of C1 and C11 are equal, the inductance values ​​of L2 and L4 are equal, the capacitance values ​​of C3 and C8 are equal, and the capacitance values ​​of C5 and C7 can be equal or unequal. The first capacitor C1, the first inductor L1 and the sixth capacitor C6, the third inductor L3, the eleventh capacitor C11 and the fifth inductor L5 form three LC parallel resonance units, which can generate three zero points outside the high frequency band; and the third capacitor C3, the second inductor L2, the eighth capacitor C8 and the fourth inductor L4 form two LC series resonance units, which can generate two more zero points outside the low frequency band; that is, the introduction of multiple zero points further enhances the stopband suppression of the bandpass filter. Example 3

[0028] The basic connection method of this embodiment is the same as that of embodiment 2, except that: Figure 1The parameter settings of each component in the circuit schematic shown are as follows: L1=0.65nH, L2=1.2nH, L3=1.2nH, L4=1.2nH, L5=0.65nH, C1=0.644pF, C2=0.765pF, C3=1.67pF, C4=1.3pF, C5=0.57pF, C6=0.4pF, C7=0.57pF, C8=1.67pF, C9=1.3pF, C10=0.765pF, C11=0.644pF. Example 4

[0029] The basic connection method of this embodiment is the same as that of embodiment 1, except that Figure 2 When laying out components, in order to reduce the resistance loss of the circuit, the length of the transmission line needs to be shortened as much as possible. To this end, for the fourth capacitor C4 and the ninth capacitor C9, since their ground connection lines are long, which may cause transmission line loss and parasitic effects, the ground connection lines of the two capacitors are interconnected and the width of the connection line is increased, which can effectively reduce the transmission line loss and improve the overall performance of the circuit.

[0030] exist Figure 2In the chip integrated circuit layout shown, the first inductor L1 is a thick copper plane inductor with an inner diameter of 350μm*430μm, a width of 100μm, and one turn; the first capacitor C1 and the second capacitor C2 are two square MIM capacitors with widths of 90μm and 85μm respectively; the second inductor L2 is a thick copper plane inductor with an inner diameter of 200μm*150μm, a width and a line spacing of 50μm, and two turns; the third capacitor C3 and the fourth capacitor C4 are two square MIM capacitors with widths of 115μm and 80μm respectively; the third inductor L3 is a thick copper plane inductor with an inner diameter of 220μm*180μm, a width and a line spacing of 50μm, and two turns; the fifth capacitor C5 is a square MIM capacitor of 80μm, and the sixth capacitor C6 is a MIM capacitor of 100μm. The first and seventh capacitors are two square MIM capacitors with a width of 64μm; the fourth inductor L4 is a thick copper plane inductor with an inner diameter of 200μm*150μm, a width and line spacing of 50μm, and two turns; the eighth capacitor C8 and the ninth capacitor C9 are two square MIM capacitors with widths of 115μm and 80μm respectively; the fifth inductor L5 is a thick copper plane inductor with an inner diameter of 350μm*430μm, a width of 100μm, and one turn; the tenth capacitor C10 and the eleventh capacitor C11 are two square MIM capacitors with widths of 90μm and 85μm respectively; the periphery of the chip is a rectangular frame grounding metal with a width of 280μm from top to bottom and 230μm from left to right, and there is a GSG signal input and output port on the left and right sides. During the probe station test, the grounding port (G port) is connected to the peripheral grounding metal, and the signal port (S port) is connected to a rectangular metal disk with a length of 200μm and a width of 230μm on each side. Due to the miniaturization advantage of IPD process, the size of the entire chip can be as small as 3.2mm*2mm. Example 5

[0031] The basic connection method of this embodiment is the same as that of embodiment 1, except that the IPD bandpass filter chip is suitable for the frequency range between 5GHz and 13GHz, the inductance value of each resonator is between 0.1nH and 10nH, and the capacitance value is between 0.1pF and 10pF. The resonant frequency is controlled by adjusting the value of the capacitor and inductance in each resonator, thereby adjusting the filtering performance of the filter. For the IPD process, adjusting the value of the capacitor and inductor is achieved by changing the number of turns, line width, inner diameter, line spacing of the inductor and changing the length and width of the capacitor.

[0032] like Figure 2In the integrated circuit layout of the high-Q miniaturized IPD bandpass filter of the embodiment of the present invention shown, the thick copper inductor uses thick copper as the coil material, with a thickness of 50μm and a width between 50μm and 100μm. Compared with the traditional metal spiral inductor, the electrical conductivity and thermal conductivity of the device are improved, thereby improving the Q value and reliability of the device and reducing circuit losses.

[0033] contrast Figure 5 The traditional spiral inductor Q value curve shown in Figure 6 As shown in the Q value curve of thick copper inductor, the Q value of spiral inductor is about 30, and the Q value of thick copper inductor is as high as more than 100, which greatly improves the inductor Q value. Example 6

[0034] The basic connection method of this embodiment is the same as that of embodiment 1, except that Figure 7 As shown, it is an electromagnetic simulation result diagram of the high Q value miniaturized IPD bandpass filter chip integrated circuit layout of the embodiment of the present invention. Among them, |S11| is the first port return loss of the high Q value miniaturized IPD bandpass filter chip, and |S21| is the insertion loss between the first port and the second port of the high Q value miniaturized IPD bandpass filter chip.

[0035] like Figure 7 As shown, in some embodiments of the present invention, within the 5-6 GHz passband frequency band, the insertion loss is better than 1.8 dB, the in-band return loss is better than -15 dB, and the in-band impedance matching is good. The transmission zero point on the left side of the passband is at 2.72 GHz and 4.39 GHz, and the corresponding suppression levels are -67 dB and -31 dB, respectively. The transmission zero point on the right side of the passband is at 6.64 GHz and 9 GHz, and the corresponding suppression levels are -48 dB and -63 dB, respectively. The suppression effect is very good. Example 7

[0036] This embodiment has the same basic connection method as that of Embodiment 1, except that, on the substrate, a closed grounded metal frame is provided around the IPD filter chip, and the grounded metal frame connects the ground ends of the input port and the output port of the chip, as well as the ground ends of the second resonator and the fourth resonator. In the embodiment of the present invention, the rectangular grounded metal frame is only an example, and in fact, grounded metal frames of other shapes can be used to meet different design requirements. In order to effectively reduce the influence of mutual crosstalk between grounding points, the width of the peripheral grounding ring is increased in the design. In addition, it is also possible to choose not to set a closed grounded metal frame, but to set grounding holes at the positions where grounding is required, and these grounding holes are directly connected to the metal grounding layer on the back of the substrate.

[0037] The present invention provides a high-Q value miniaturized IPD bandpass filter chip and device, each parallel resonance unit can generate a zero point outside the high frequency band, each series resonance unit can generate a zero point outside the low frequency band, and the introduction of multiple zero points can improve the stopband suppression of the bandpass filter; the capacitor adopts MIM flat capacitor, which is processed by thin film deposition technology to achieve high integration and miniaturization, thereby effectively reducing the size of the filter; the inductor element and the circuit are formed by depositing thick metal material on the substrate, which increases the thickness and width of the inductor, solves the practical problem of low Q value of traditional planar IPD inductor, improves the filtering function of the filter, and reduces circuit loss.

[0038] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent substitutions for some of the technical features therein. However, any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A high Q value miniaturized IPD bandpass filter chip, characterized in that: It includes a circuit layer, a grounding terminal surrounding the circuit layer, and a substrate, wherein the circuit layer and the grounding terminal surrounding the circuit layer are arranged on the substrate; The circuit layer includes a capacitor-inductor resonator network and an input port and an output port both of which adopt a ground-signal-ground structure; The input port receives an input signal; The capacitor-inductor resonator network blocks signals outside the passband frequency range; The output port outputs a signal that is within the passband frequency range after being processed by the capacitor-inductor resonator network; The capacitor-inductor resonator network includes a first resonator, a second resonator, a third resonator, a fourth resonator and a fifth resonator. The five groups of resonators form a π-type connection structure. The third resonator is the center of the π-type connection structure. The second resonator and the fourth resonator connect the two ends of the third resonator. The first resonator is connected to the input port of the chip, and the fifth resonator is connected to the output port of the chip.

2. The high Q value miniaturized IPD bandpass filter chip according to claim 1, characterized in that: The capacitor in the capacitor-inductor resonator network is a MIM flat plate capacitor processed by thin film deposition technology, and the MIM flat plate capacitor includes an upper plate metal layer, a silicon nitride insulating layer and a lower plate metal layer; The inductor in the LC resonator network is formed by depositing thick copper on the substrate.

3. The high Q value miniaturized IPD bandpass filter chip according to claim 2, characterized in that: The first resonator includes a first capacitor C1, a second capacitor C2 and a first inductor L1, the first capacitor C1 and the first inductor L1 are connected in parallel to form a first capacitor-inductor parallel resonant structure, one end of the first capacitor-inductor parallel resonant structure is connected to the input port of the chip as the input end of the first resonator, the other end of the first capacitor-inductor parallel resonant structure is connected to the upper plate metal layer of the second capacitor C2, and the lower plate metal layer of the second capacitor C2 is the output end of the first resonator; The second resonator includes a third capacitor C3, a fourth capacitor C4 and a second inductor L2, the third capacitor C3 and the second inductor L2 are connected in series to form a second capacitor-inductor series resonant structure, the fourth capacitor C4 is a grounding capacitor, and two ends of the second capacitor-inductor series resonant structure and two ends of the fourth capacitor C4 are connected in parallel; The third resonator includes a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7 and a third inductor L3, the sixth capacitor C6 and the third inductor L3 are connected in parallel to form a third capacitor-inductor parallel resonant structure, the lower plate metal layer of the fifth capacitor C5 is the input end of the third resonator, the upper plate metal layer of the fifth capacitor C5 is connected to one end of the third capacitor-inductor parallel resonant structure, the other end of the third capacitor-inductor parallel resonant structure is connected to the upper plate metal layer of the seventh capacitor C7, and the lower plate metal layer of the seventh capacitor C7 is the output end of the third resonator; The fourth resonator includes an eighth capacitor C8, a ninth capacitor C9 and a fourth inductor L4, the eighth capacitor C8 and the fourth inductor L4 are connected in series to form a fourth capacitor-inductor series resonant structure, the ninth capacitor C9 is a grounding capacitor, and two ends of the fourth capacitor-inductor series resonant structure are connected in parallel with two ends of the ninth capacitor C9; The fifth resonator includes a tenth capacitor C10, an eleventh capacitor C11 and a fifth inductor L5. The eleventh capacitor C11 and the fifth inductor L5 are connected in parallel to form a fifth capacitor-inductor parallel resonant structure. The lower plate metal layer of the tenth capacitor C10 is the input end of the fifth resonator, the upper plate metal layer of the tenth capacitor C10 is connected to one end of the fifth capacitor-inductor parallel resonant structure, and the other end of the fifth capacitor-inductor parallel resonant structure is the output end of the fifth resonator and is connected to the output port of the chip.

4. The high Q value miniaturized IPD bandpass filter chip according to claim 3, characterized in that: The capacitance value and the inductance value in the first resonator are respectively equal to the capacitance value and the inductance value in the fifth resonator; The capacitance value and the inductance value in the second resonator are respectively equal to the capacitance value and the inductance value in the fourth resonator; The capacitance value of the fifth capacitor C5 is equal to the capacitance value of the seventh capacitor C7.

5. The high Q value miniaturized IPD bandpass filter chip according to claim 3 or 4, characterized in that: The five groups of resonators form a π-type connection structure, which is an axisymmetric structure with symmetric position; The first resonator and the fifth resonator are in an axisymmetric structure with respect to the third resonator; The second resonator and the fourth resonator are in an axisymmetric structure with respect to the third resonator.

6. The high Q value miniaturized IPD bandpass filter chip according to claim 1, characterized in that: The filter is applicable to a frequency band ranging from 5 GHz to 13 GHz, the inductance value in the capacitor-inductor resonator network ranges from 0.1 nH to 10 nH, and the capacitance value ranges from 0.1 pF to 10 pF.

7. The high Q value miniaturized IPD bandpass filter chip according to claim 1, characterized in that: On the substrate, a closed grounding metal frame is arranged around the filter chip, and the grounding metal frame connects the grounding end of the input port, the grounding end of the output port, the grounding end of the second resonator and the grounding end of the fourth resonator.

8. The high Q value miniaturized IPD bandpass filter chip according to claim 1, characterized in that: The material of the substrate is glass.

9. A high Q value miniaturized IPD bandpass filter device, characterized in that: The invention comprises using the high-Q-value miniaturized IPD bandpass filter chip as claimed in any one of claims 1 to 8.

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