Single crystal furnace for semiconductor generation

Abstract

The utility model relates to the technical field of single crystal furnaces, and provides a single crystal furnace for semiconductor generation, which comprises a motor protection cover, a driving motor fixedly connected with an inner cavity of the motor protection cover, a start button movably connected with one side of the driving motor, and a threaded rod sleeve fixedly connected with one side of the motor protection cover. The threaded rod sleeve communicated with the interior of the furnace body is arranged on one side of the furnace body, semiconductor production raw materials can be uniformly fed into the furnace body through rotation of the feeding threaded rod in the inner cavity of the threaded rod sleeve, and the automatic feeding design is efficient and simple; by means of the design, workers do not need to carry out feeding from the top of the furnace body with a certain height, so that the safety of production work is improved, the exhaust pipe and the air leakage pipe which are communicated with the interior of the furnace body are arranged on the side face of the furnace body, and compared with the mode that the exhaust pipe and the air leakage pipe are arranged on the top of the furnace body, operation is convenient. By means of the design, a worker can conveniently conduct air exhaust and air release work on the interior of the furnace body in time.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal furnaces, in particular to a single crystal furnace used for semiconductor generation. Background Art

[0002] For example, the application number CN202020274688.3 discloses a single crystal furnace for semiconductor generation, which relates to the technical field of single crystal furnaces, in order to solve the problem that the existing single crystal furnaces have imperfect thermal insulation performance and are not convenient to use. A mounting frame is installed below the shell of the single crystal furnace, an exhaust port is provided on one side of the lower end of the shell of the single crystal furnace, a regulating valve is installed at the front end of the exhaust port, a motor is installed at the middle position of the lower end of the shell of the single crystal furnace, a visual glass window is installed at the upper end of the front end of the shell of the single crystal furnace, a flange-sealed lower connecting cover is installed at the upper end of the flange-sealed lower connecting cover, and a flange-sealed upper connecting cover is installed on the upper end of the flange-sealed upper connecting cover, and a vacuum exhaust port is provided on one side above the flange-sealed upper connecting cover.

[0003] However, the above-mentioned semiconductor production single crystal furnace still has the following problems: the design adopts a semiconductor feed port set at the top of the single crystal furnace, and the staff is required to feed the materials from the top of the single crystal furnace. This practice can easily cause the semiconductor raw materials to adhere to the inner wall of the single crystal furnace. At the same time, since the single crystal furnace itself has a certain height, this feeding method makes the staff have a certain risk of falling when feeding. Utility Model Content

[0004] The utility model provides a single crystal furnace for semiconductor production, which solves the problem of material feeding in the single crystal furnace for semiconductor production in the related technology.

[0005] The technical solution of the utility model is as follows: A single crystal furnace for semiconductor production, comprising a motor protection cover, an inner cavity of the motor protection cover is fixedly connected to a drive motor, one side of the drive motor is movably connected to a start button, one side of the motor protection cover is fixedly connected to a threaded rod sleeve, a drive rod is installed on the inner side of the threaded rod sleeve, the outer side of the drive rod is fixedly connected to a feeding threaded rod, and the drive rod passes through a circular slot on one side of the motor protection cover and is drive-connected to one side of the drive motor.

[0006] Preferably, the motor protection cover is fixedly connected to the top semicircular groove of the support panel.

[0007] Preferably, support rods are fixedly connected around the bottom of the support panel.

[0008] Preferably, a control panel is fixedly connected to one side of the top of the support panel, and a control button is movably connected to the top of the control panel.

[0009] Preferably, a circular groove is formed through the middle of the support panel, and a furnace body is fixedly connected in the circular groove through the middle of the support panel.

[0010] Preferably, an exhaust pipe is fixedly connected to one side of the furnace body, the exhaust pipe is communicated with the interior of the furnace body, and an exhaust control valve is fixedly connected to the top of the exhaust pipe.

[0011] Preferably, a gas relief pipe is fixedly connected to one side of the furnace body below the exhaust pipe, the gas relief pipe is communicated with the interior of the furnace body, and a gas relief control valve is fixedly connected to the top of the gas relief pipe.

[0012] Preferably, the threaded rod sleeve is communicated with the interior of the furnace body.

[0013] Preferably, a top cover is movably connected to the top of the furnace body.

[0014] Preferably, the inner cavity of the furnace body is fixedly connected to a feeding crucible, the bottom of the feeding crucible is connected to a processing tube, the outer side of the processing tube is fixedly connected to a graphite heater, and the input end of the graphite heater is electrically connected to the output end at the bottom of the control panel.

[0015] Technical effects and advantages of the utility model:

[0016] 1. The utility model provides a threaded rod sleeve connected to the inside of the furnace body on one side of the furnace body. The raw materials for semiconductor production can be evenly fed into the furnace body by rotating the feeding threaded rod in the inner cavity of the threaded rod sleeve. The automatic feeding design is efficient and simple, and the design eliminates the need for workers to feed materials from the top of the furnace body with a certain height, thereby improving the safety of production work.

[0017] 2. The utility model arranges the exhaust pipe and the exhaust pipe connected to the inside of the furnace body on the side of the furnace body. Compared with arranging them on the top of the furnace body, this design can facilitate the staff to exhaust and exhaust the inside of the furnace body in time. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a front schematic diagram of the overall device structure of the utility model.

[0019] Figure 2 It is a cross-sectional view of the connection point between the furnace body and the threaded rod sleeve of the utility model.

[0020] Figure 3 It is a schematic diagram of the internal structure of the furnace body of the utility model.

[0021] Figure 4 This is a cross-sectional structural diagram of the threaded rod sleeve of the utility model.

[0022] The accompanying drawings are marked as follows: 1. furnace body; 101. top cover; 2. exhaust pipe; 201. exhaust control valve; 3. vent pipe; 301. vent control valve; 4. support panel; 401. support rod; 5. control panel; 501. control button; 6. motor protection cover; 601. start button; 602. drive motor; 603. drive rod; 604. feed threaded rod; 7. threaded rod sleeve; 8. feed crucible; 9. processing tube; 10. graphite heater. DETAILED DESCRIPTION

[0023] The following will be combined with the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0024] Reference Figure 4 The utility model provides a single crystal furnace for semiconductor production, including a motor protection cover 6, the inner cavity of the motor protection cover 6 is fixedly connected to a driving motor 602, one side of the driving motor 602 is movably connected to a start button 601, one side of the motor protection cover 6 is fixedly connected to a threaded rod sleeve 7, the inner side of the threaded rod sleeve 7 is installed with a driving rod 603, the outer side of the driving rod 603 is fixedly connected with a feeding threaded rod 604, and the driving rod 603 passes through a circular slot on one side of the motor protection cover 6 and is driven and connected to one side of the driving motor 602.

[0025] Reference Figure 1 and Figure 4 The motor protection cover 6 is fixedly connected to the semicircular groove on the top of the support panel 4. The motor protection cover 6 is fixed in the semicircular groove on the top of the support panel 4 to increase the overall stability of the device.

[0026] Reference Figure 1 The bottom of the support panel 4 is fixedly connected with support rods 401 .

[0027] Reference Figure 1 A control panel 5 is fixedly connected to one side of the top of the support panel 4, and a control button 501 is movably connected to the top of the control panel 5.

[0028] Reference Figure 1 A circular groove is formed in the middle of the support panel 4, and the furnace body 1 is fixedly connected in the circular groove formed in the middle of the support panel 4.

[0029] Reference Figure 1A gas extraction pipe 2 is fixedly connected to one side of the furnace body 1, and the gas extraction pipe 2 is connected to the inside of the furnace body 1. A gas extraction control valve 201 is fixedly connected to the top of the gas extraction pipe 2, and the gas extraction control valve 201 is electrically connected to the control button 501.

[0030] Referring to 1, a deflation pipe 3 is fixedly connected to one side of the furnace body 1 near the bottom of the exhaust pipe 2, the deflation pipe 3 is connected to the interior of the furnace body 1, a deflation control valve 301 is fixedly connected to the top of the deflation pipe 3, the deflation control valve 301 and the operating button 501 are electrically connected. By arranging the exhaust pipe 2 and the deflation pipe 3 connected to the interior of the furnace body 1 on the side of the furnace body 1, compared with arranging them on the top of the furnace body 1, this design can facilitate the staff to exhaust and deflate the interior of the furnace body 1 in a timely manner.

[0031] Reference Figure 2 The threaded rod sleeve 7 is connected with the interior of the furnace body 1. By providing a threaded rod sleeve 7 connected with the interior of the furnace body 1 on one side of the furnace body 1, the semiconductor production raw materials can be evenly fed into the furnace body 1 by rotating the feeding threaded rod 604 in the inner cavity of the threaded rod sleeve 7. The automatic feeding design is efficient and simple, and the design eliminates the need for workers to feed materials from the top of the furnace body 1 with a certain height, thereby improving the safety of production work.

[0032] Referring to 1, a top cover 101 is movably connected to the top of the furnace body 1. The top cover 101 can be designed to be closable and slotted according to the finished product after the semiconductor raw materials are processed and produced, so as to facilitate the lifting of the finished product.

[0033] Reference Figure 1 The inner cavity of the furnace body 1 is fixedly connected with a feeding crucible 8, the bottom of the feeding crucible 8 is connected with a processing tube 9, the outer side of the processing tube 9 is fixedly connected with a graphite heater 10, and the input end of the graphite heater 10 is electrically connected to the output end at the bottom of the control panel 5.

[0034] The working principle of the utility model is as follows: first, the staff activates the exhaust control valve 201 located at the top of the exhaust pipe 2 by operating the button 501, and extracts the oxygen inside the furnace body 1 to prevent the oxygen inside the furnace body 1 from affecting the production quality. Then, the staff puts the semiconductor raw materials to be fed into the rectangular slot at the top of the threaded rod sleeve 7, and then activates the start button 601 located on the side of the drive motor 602. At this time, the drive motor 602 starts to work and drives the drive rod 603 to start rotating through the output end. At this time, the feeding threaded rod 604 located outside the drive rod 603 starts to rotate and is fed into the threaded rod sleeve 7. The semiconductor raw material in the inner cavity of the rod sleeve 7 is evenly transported to the interior of the furnace body 1 through the inner cavity of the threaded rod sleeve 7 as the feeding threaded rod 604 rotates, and falls into the feeding crucible 8 through the tail of the threaded rod sleeve 7. At this time, the semiconductor raw material slides into the interior of the processing tube 9 through the inner wall of the feeding crucible 8. Then the staff starts the graphite heater 10 located on the outside of the processing tube 9 by operating the button 501 to continuously heat the semiconductor raw material in the processing tube 9. When the heating is completed, the air release control valve 301 can be controlled by the operating button 501, and the air release work is completed through the air release control valve 301 and the air release pipe 3.

[0035] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A single crystal furnace for semiconductor production, comprising a motor protection cover (6), characterized in that: The inner cavity of the motor protection cover (6) is fixedly connected to a driving motor (602), one side of the driving motor (602) is movably connected to a starting button (601), one side of the motor protection cover (6) is fixedly connected to a threaded rod sleeve (7), the inner side of the threaded rod sleeve (7) is provided with a driving rod (603), the outer side of the driving rod (603) is fixedly connected to a feeding threaded rod (604), and the driving rod (603) passes through a circular slot on one side of the motor protection cover (6) and is drivingly connected to one side of the driving motor (602).

2. A single crystal furnace for semiconductor production according to claim 1, characterized in that: The motor protection cover (6) is fixedly connected to the semicircular groove on the top of the support panel (4).

3. A single crystal furnace for semiconductor production according to claim 2, characterized in that: Support rods (401) are fixedly connected around the bottom of the support panel (4).

4. A single crystal furnace for semiconductor production according to claim 2, characterized in that: A control panel (5) is fixedly connected to one side of the top of the support panel (4), and a control button (501) is movably connected to the top of the control panel (5).

5. A single crystal furnace for semiconductor production according to claim 2, characterized in that: A circular groove is formed through the middle of the support panel (4), and a furnace body (1) is fixedly connected in the circular groove through the middle of the support panel (4).

6. A single crystal furnace for semiconductor production according to claim 5, characterized in that: An exhaust pipe (2) is fixedly connected to one side of the furnace body (1), the exhaust pipe (2) is communicated with the interior of the furnace body (1), and an exhaust control valve (201) is fixedly connected to the top of the exhaust pipe (2).

7. The single crystal furnace for semiconductor production according to claim 5, characterized in that: A gas relief pipe (3) is fixedly connected to one side of the furnace body (1) below the exhaust pipe (2); the gas relief pipe (3) is in communication with the interior of the furnace body (1); and a gas relief control valve (301) is fixedly connected to the top of the gas relief pipe (3).

8. The single crystal furnace for semiconductor production according to claim 1, characterized in that: The threaded rod sleeve (7) is communicated with the interior of the furnace body (1).

9. The single crystal furnace for semiconductor production according to claim 5, characterized in that: A top cover (101) is movably connected to the top of the furnace body (1).

10. The single crystal furnace for semiconductor production according to claim 5, characterized in that: The inner cavity of the furnace body (1) is fixedly connected to a feeding crucible (8), the bottom of the feeding crucible (8) is connected to a processing tube (9), the outer side of the processing tube (9) is fixedly connected to a graphite heater (10), and the input end of the graphite heater (10) is electrically connected to the output end at the bottom of the control panel (5).

Images