Three-phase full-bridge driving power integration module

Abstract

The utility model provides a three-phase full-bridge driving power integrated module and an internal common connection scheme thereof. The module specifically comprises three phases of metal bridge arm frames arranged in parallel, the metal bridge arm frames comprise a first bridge arm frame, a second bridge arm frame and a third bridge arm frame, each of the first bridge arm frame, the second bridge arm frame and the third bridge arm frame comprises two power tubes, the power tubes of an upper bridge and a lower bridge are located on the same bridge arm, the interiors of grounding leads are connected together, and substrate segmentation is eliminated. The optimal design of the metal bridge arm frame enables output signals and control signals to be distributed on different sides, and interference of current changes and high-frequency noise on the control signals is reduced. Meanwhile, different types of power tubes are adopted to optimize power loss, current transmission capability, temperature characteristics and the like, and the overall performance and stability are improved. Through optimization measures such as semi-etching of a packaging structure, good electrical connection and effective isolation from other elements are ensured, and the reliability and stability of the module are enhanced.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, and in particular to a three-phase full-bridge drive power integrated module and an internal common connection solution thereof. Background Art

[0002] In the field of power electronics, a three-phase full-bridge drive solution is usually used to drive a three-phase motor. However, the common dual-tube "patchwork" drive solution on the market currently has some problems, such as complex drive layout and electromagnetic compatibility (EMC) interference. Traditional dual-tube modules and three-phase splicing modules are complex in structure, high in cost, and require external drive circuit connections, resulting in complex drive-end wiring, poor overall device anti-EMC capability, large stray inductance, and higher required turn-off voltage, which increases the risk of device breakdown. For example, a common dual-tube module is usually packaged by two MOSFETs spliced ​​together, and three such devices are required to achieve the drive of a three-phase motor, which not only increases the cost, but also occupies a large PCB board space and makes the layout complicated. On the other hand, although the three-phase splicing module packages six MOSFETs on one device, solving the cost and space occupancy problems, its VDD and VSS ends still need external drive circuit connections, resulting in complex wiring, poor anti-EMC capability, large stray inductance, and increased device breakdown risk.

[0003] The patent publication single volume entitled “An integrated three-phase full-bridge power module” and the announcement number of the authorization announcement issued by the State Intellectual Property Office is CN117525047A, which discloses an integrated three-phase full-bridge power module, including a plastic package, a frame is provided in the plastic package, the top surface of the frame is located in the same plane as the top surface of the plastic package, and the two sides of the frame extend out of the two side edges of the plastic package; the frame includes six pin groups, a VS phase base island provided on one side, and a U phase base island, a V phase base island and a W phase base island provided on the other side, wherein three pin groups are located on one side of the VS phase base island, and the other three pin groups are arranged in one-to-one correspondence with the U phase base island, the V phase base island and the W phase base island; the pin group includes a source pin and a gate pin, and the frame also includes a GND pin located between the U phase base island and the V phase base island and between the V phase base island and the W phase base island, and three chips are provided on the VS phase base island, and the A chip is respectively provided on the U-phase base island, the V-phase base island and the W-phase base island; the chip comprises a semiconductor layer, a source metal layer and a gate metal layer are provided on the top of the semiconductor layer, and a drain metal layer is provided on the bottom; the source metal layers of the three chips on the VS-phase base island are respectively connected to the U-phase base island, the V-phase base island and the W-phase base island in a one-to-one correspondence; the source metal layers of the chips on the U-phase base island and the V-phase base island are respectively connected to the GND pins located between the U-phase base island and the V-phase base island, the source metal layers of the chips on the V-phase base island and the W-phase base island are respectively connected to the GND pins located between the V-phase base island and the W-phase base island, the source metal layers and the gate metal layers of the three chips on the VS-phase base island are also respectively connected to the three pin groups on one side of the plastic package; the source metal layers and the gate metal layers of the chips on the U-phase base island, the V-phase base island and the W-phase base island are also respectively connected to the three pin groups on the other side of the plastic package in a one-to-one correspondence.

[0004] However, the problems are:

[0005] 1. The two MOSFETs of the upper and lower bridges are located on different base islands and can only be connected through metal sheets or copper sheets, resulting in ① complex lead frames ② reduced power transmission characteristics and response speed;

[0006] 2. The output pins of the U / V / W three-phase output and the input pins of the control signal (source pin and gate pin) are located on the same side of the lead frame. Current changes and high-frequency noise will affect the stability and accuracy of the control signal, and the output signal will interfere with the control signal;

[0007] 3. The substrate is divided between the upper and lower bridges, and the GND pins are not internally connected. ① It increases the complexity and fragility of the connection, which easily leads to connection failure or poor contact. ② It reduces the heat dissipation efficiency of the module because the larger substrate area can better dissipate heat.

[0008] 4. Only one type of MOS tube is used, and power loss, current transmission capacity, temperature characteristics and control circuit design cannot be optimized more carefully;

[0009] 5. The semi-etched structure is not used in some parts. For example, the power supply and ground leads are in the same plane as other substrates, which cannot ensure effective isolation from other components and good electrical connection, and cannot be conveniently connected to external circuits. Utility Model Content

[0010] The utility model provides a three-phase full-bridge drive power integrated module, which can reduce the interference of current change and high-frequency noise on control signals and enhance the reliability and stability of the module.

[0011] To achieve the purpose of the present utility model, a full-bridge power module is provided, comprising:

[0012] Transfer base island metal frame, upper bridge control pin frame, lower bridge control pin frame, metal bridge arm frame and several bridge arm power tubes;

[0013] The metal bridge arm frame comprises a first bridge arm frame, a second bridge arm frame and a third bridge arm frame arranged in parallel;

[0014] The first bridge arm frame, the second bridge arm frame and the third bridge arm frame are used to connect corresponding bridge arm power tubes and extend output pins to the module end;

[0015] The transfer base island metal frame includes a power transfer base island and a ground transfer base island, the power transfer base island and the ground transfer base island are respectively located on both sides of the metal bridge arm frame, and extend VDD pins and VSS pins near the end of the module to facilitate the nearby connection of the bridge arm power tube;

[0016] The upper bridge control pin frame is located on the side where the VDD pin of the module is located, and the lower bridge control pin frame is located on the side where the VSS pin of the module is located, and is respectively connected to each bridge arm power tube in a close proximity to provide a control signal to the bridge arm power tube;

[0017] The package body is used to package the base island metal frame, the upper bridge control pin frame, the lower bridge control pin frame, the metal bridge arm frame and a plurality of bridge arm power tubes.

[0018] Preferably, the transfer base island metal frame is a semi-etched structure, wherein the heights of the VDD pin and the VSS pin are both greater than the heights of the power transfer base island and the ground transfer base island body, and the power transfer base island and the ground transfer base island are encapsulated inside the package body.

[0019] Furthermore, in the first bridge arm frame, the second bridge arm frame and the third bridge arm frame, the bridge arm power tubes set in any bridge arm frame include N-type MOSFET and P-type MOSFET, and the P-type MOSFET is set at one end of the module close to the VDD pin, and the N-type MOSFET is set at one end of the module close to the VSS pin.

[0020] Furthermore, the upper bridge control pin frame and the lower bridge control pin frame both include corresponding gate pins and source pins of the bridge arm power tube, which are respectively used to connect the gate and source of the corresponding bridge arm power tube; the upper bridge control pin frame and the lower bridge control pin frame are connected to each bridge arm power tube through bonding wires;

[0021] The drain of any MOSFET is connected to one of the first bridge arm frame, the second bridge arm frame and the third bridge arm frame, and provides output to the outside through the output pin;

[0022] The gate of any MOSFET is connected to the gate pin in the upper bridge lead frame or the lower bridge lead frame as close as possible;

[0023] The source of any MOSFET is connected to the nearest source pin in the upper bridge lead frame or the lower bridge lead frame.

[0024] Furthermore, the length direction of the adapter base island metal frame is parallel to the length direction of the module, and the length is not less than half of the overall outer width of the bridge arm power tube layout area; the length of the second bridge arm frame is greater than the length of the first bridge arm frame and the third bridge arm frame; the output pins of the metal bridge arm frame are parallel to the length direction of the adapter base island as a whole, and the output pins of the first bridge arm frame and the output pins of the third bridge arm frame respectively extend to one side of the module end, and the output pins of the second bridge arm frame extend to both sides to the module end.

[0025] Preferably, the thickness of the transfer base island metal frame does not exceed 5 mm, and the packaging body is an epoxy plastic packaging body.

[0026] The utility model realizes the internal common connection scheme through component replacement optimization, specific layout and internal connection method. The MOSFET bridge arm power tubes of the upper and lower bridges are located on the same metal bridge arm frame, and the upper and lower bridges of each metal bridge arm frame are connected as a whole, and the VDD pin and the VSS pin are internally common connected, thereby simplifying the lead frame design. This optimization scheme not only reduces the complexity of lead wiring and the fragility of connection, but also effectively reduces stray inductance and improves the overall stability and performance of the module. At the same time, this layout also improves the heat dissipation efficiency, power transmission characteristics and response speed of the module, and further enhances the overall electromagnetic compatibility (EMC) capability.

[0027] This three-phase full-bridge drive power integrated module design, combined with different types of MOSFET bridge arm power tubes, achieves detailed optimization of power loss, current transmission capacity, temperature characteristics, etc., thereby improving overall performance and stability. For key parts, such as power and ground leads, half-etching treatment is used to ensure effective isolation and good electrical connection with other components, improve the reliability and stability of the module, and also make it easier to connect to external circuits. These optimization measures enable the utility model to show better performance and reliability in circuit design. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A schematic diagram of a lead frame of a three-phase full-bridge drive power integrated module according to an embodiment of the utility model;

[0029] Figure 2 This is an overall schematic diagram of a three-phase full-bridge drive power integration module according to an embodiment of the utility model;

[0030] Figure 3 This is an internal circuit connection diagram of a three-phase full-bridge drive power integrated module according to an embodiment of the utility model;

[0031] Figure 4 This is a circuit diagram of a three-phase full-bridge drive power integrated module according to an embodiment of the present utility model.

[0032] In the above drawings:

[0033] 1. Epoxy resin plastic packaging structure; 2. First bridge arm frame; 3. Second bridge arm frame; 4. Third bridge arm frame; 5. Power transfer base island; 6. Ground transfer base island; 7. VDD pin; 8. VSS pin; 9. Upper bridge control pin frame (first bridge arm upper bridge gate pin 9a, first bridge arm upper bridge source pin 9b, second bridge arm upper bridge gate pin 9c, second bridge arm upper bridge source pin 9d, third bridge arm upper bridge gate pin 9e, third bridge arm lower bridge source pin 9f); 10. Lower bridge control pin frame (first bridge arm lower bridge gate pin 10a, first bridge arm lower bridge source pin 10b, second bridge arm lower bridge gate pin 10c, second bridge arm lower bridge source pin 10d, third bridge arm lower bridge gate pin 10e, third bridge arm lower bridge source pin 10f); 11. Output pin (first bridge arm output pin 11a, second bridge arm output pin 11b, third bridge arm output pin 11c); 12. Upper bridge power tube (first bridge arm P-type MOSFET 12a, second bridge arm P-type MOSFET 12b, third bridge arm P-type MOSFET 12c); 13. lower bridge power tube (first bridge arm N-type MOSFET 13a, second bridge arm N-type MOSFET 13b, third bridge arm N-type MOSFET 13c); 14. half-etched structure (power transfer base island half-etched structure 14a, ground transfer base island half-etched structure 14b); 15. upper bridge control pin frame (G4, S4, G5, S5, G6, S6); 16. lower bridge control pin frame (G1, S1, G2, S2, G3, S3). DETAILED DESCRIPTION

[0034] The embodiments of the utility model are described in detail below. Examples of the embodiments are shown in the accompanying drawings. The example implementation methods can be implemented in various forms and should not be construed as being limited to the examples set forth herein; on the contrary, these implementation methods are provided so that the utility model will be more comprehensive and complete, and the concept of the example implementation methods will be fully conveyed to those skilled in the art. Wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be construed as limiting the present invention. In the description of the present invention, it should be understood that, unless otherwise specified, the meaning of "multiple" and "several" is two or more.

[0035] In the description of the present invention, it should be noted that, unless otherwise clearly stipulated and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] The utility model is a three-phase full-bridge drive power integrated module, including a transfer base island metal frame, an upper bridge control pin frame 9, a lower bridge control pin frame 10, a metal bridge arm frame and a plurality of bridge arm power tubes that are packaged as one. The transfer base island metal frame and the metal bridge arm frame are intended to simplify the structural layout of the module, provide stable support and electrical connection, so as to facilitate the connection of the integrated circuit chip with the external circuit, and facilitate the use and mounting of the module.

[0037] Specifically, Figure 1 As shown, the metal bridge arm frame includes a first bridge arm frame 2, a second bridge arm frame 3 and a third bridge arm frame 4; the first bridge arm frame 2, the second bridge arm frame 3 and the third bridge arm frame 4 are used to connect corresponding bridge arm power tubes and extend output pins to the end of the module;

[0038] In this embodiment, the adapter base island metal frame includes a power adapter base island 5 and a ground adapter base island 6, and the power adapter base island 5 and the ground adapter base island 6 are respectively located on both sides of the metal bridge arm frame, and extend VDD pin 7 and VSS pin 8 near the end of the module; the length direction of the power adapter base island 5 and the ground adapter base island 6 is perpendicular to the metal bridge arm frame as a whole, and the length is not less than half of the overall outer width of the metal bridge arm frame arranged in parallel; the thickness of the adapter base island metal frame does not exceed 5mm; the power adapter base island 5 and the ground adapter base island 6 are respectively located on both sides of the metal bridge arm frame, in a convex shape, and the protruding parts extend VDD pin 7 and VSS pin 8 near the end of the module to facilitate the connection of the bridge arm power tube nearby. Limiting the thickness of the transfer base island metal frame within a wider range can ensure that the module has high compatibility and selectivity during design and application. For example, when there are design requirements such as lightweight products and compact space, a thinner substrate may be more advantageous; in some high-power application scenarios, a thicker substrate has the advantages of heat dissipation performance and electromagnetic compatibility.

[0039] The power transfer base island 5 and / or the ground transfer base island 6 extend to the end of the module in a direction parallel to the length of the module. The internal interconnection design of the pins corresponding to the VDD pin 7 and the VSS pin 8 makes the module structure simpler and reduces the contact points and connection points between components; the larger substrate area after the internal interconnection integration can better dissipate heat; the additional lead frame and substrate segmentation will increase the complexity of the connection, and the integrated design of the VDD pin 7 and the VSS pin 8 can reduce this complexity and enhance the overall electromagnetic compatibility.

[0040] In this embodiment, the power transfer base island 5 and the VDD pin 7, the ground transfer base island 6 and the VSS pin 8 are all half-etched structures, wherein the heights of the VDD pin 7 and the VSS pin 8 are greater than the heights of the power transfer base island and the ground transfer base island body, and the power transfer base island and the ground transfer base island are encapsulated inside the encapsulation body. Figure 2 As shown, this half-etched structure 14 is encapsulated by a plastic package, which enhances the mechanical strength of the base island and reduces the risk of possible damage or breakage caused by changes in the external environment. Secondly, the half-etched structure 14 can effectively isolate the VSS pin 8 and the VDD pin 7 from the surrounding environment or other circuit parts, reduce possible interference or crosstalk, and improve the anti-interference ability of the circuit. In addition, the half-etched structure 14 can also increase the bonding strength between the base island and the plastic package, which helps prevent the plastic package from falling off during use, thereby extending the service life of the components. In summary, the half-etched structure 14 can significantly improve the mechanical strength of the components and the anti-interference ability of the circuit.

[0041] In this embodiment, the first bridge arm frame 2, the second bridge arm frame 3 and the third bridge arm frame 4 are all rectangular metal areas, and the area of ​​the metal area is greater than the sum of the bottom areas of the two power tubes of the corresponding metal bridge arm frame; the length of the second bridge arm frame 3 is greater than the length of the first bridge arm frame 2 and the third bridge arm frame 4, and the two ends of the length direction are connected with the second bridge arm output pin 11b, and the second bridge arm output pin 11b is parallel to the length direction of the adapter base island metal frame as a whole and extends to both ends of the module; one end of the length direction of the metal area of ​​the first bridge arm frame 2 is connected with the first bridge arm output pin 11a, and extends to one side of the module end; one end of the length direction of the metal area of ​​the third bridge arm frame 4 is connected with the third bridge arm output pin 11c, and extends to one side of the module end;

[0042] The upper bridge control pin frame is located on the side where the VDD pin 7 of the module is located, and the lower bridge control pin frame is located on the side where the VSS pin 8 of the module is located, and is respectively connected to each bridge arm power tube through bonding leads to provide control signals to the bridge arm power tubes; the output pins 11 of the first bridge arm frame 2 to the third bridge arm frame 4 and the control pin frame (upper bridge control pin frame 9, lower bridge control pin frame 10) are reasonably arranged on different sides of the module, which can effectively reduce the interference of current changes and high-frequency noise, help maintain the stability and accuracy of the control signal, and improve the overall anti-interference ability.

[0043] In this embodiment, the bridge arm power tubes set in any metal bridge arm frame include N-type MOSFET and P-type MOSFET, and the P-type MOSFET is set at one end close to the VDD pin 7 in the module, as the upper bridge power tube (the first bridge arm P-type MOSFET 12a, the second bridge arm P-type MOSFET 12b, and the third bridge arm P-type MOSFET 12c), and the N-type MOSFET is set at one end close to the VSS pin 8 in the module, as the lower bridge power tube (the first bridge arm N-type MOSFET 13a, the second bridge arm N-type MOSFET 13b, and the third bridge arm N-type MOSFET 13c); In some cases, N-type power tubes may have lower on-resistance and power consumption, while P-type MOSFETs may have lower leakage current when turned off. Therefore, selecting power tubes with different characteristics for combined output can bring more flexibility and the possibility of performance optimization, such as more detailed optimization in terms of power loss, current transmission capability, etc.; The current flow directions of P-type MOSFET and N-type MOSFET are opposite in the on state. Therefore, the mixed use of the two power tubes enables the power tubes of the upper and lower bridges to be located on the same bridge arm, eliminating the substrate division between the upper and lower bridges, optimizing the circuit layout, reducing additional lead frames and substrate divisions, and further reducing stray inductance.

[0044] In this embodiment, any bridge arm power tube is connected to the upper bridge control lead frame 9, the lower bridge control lead frame 10, the power transfer base island 5 and the ground transfer base island 6 respectively through bonding wires, wherein:

[0045] The drain of any bridge arm power tube is connected to one of the first bridge arm frame 2, the second bridge arm frame 3 and the third bridge arm frame 4, and provides output to the outside through the output pin 11;

[0046] The gate of the first bridge arm P-type MOSFET 12a is connected to the first bridge arm upper bridge gate pin 9a, and its source is respectively connected to the first bridge arm upper bridge source pin 9b and the power transfer base island 5 nearby;

[0047] The gate of the first bridge arm N-type MOSFET 13a is connected to the first bridge arm lower bridge gate pin 10a, and the source thereof is respectively connected to the first bridge arm lower bridge source pin 10b and the ground transfer base island 6 nearby;

[0048] The gate of the second bridge arm P-type MOSFET 12b is connected to the second bridge arm upper bridge gate pin 9c, and its source is respectively connected to the second bridge arm upper bridge source pin 9d and the power transfer base island 5 nearby;

[0049] The gate of the second bridge arm N-type MOSFET 13b is connected to the second bridge arm lower bridge gate pin 10c, and its source is respectively connected to the second bridge arm lower bridge source pin 10d and the ground transfer base island 6;

[0050] The gate of the third bridge arm P-type MOSFET 13c is connected to the third bridge arm upper bridge gate pin 9e, and its source is respectively connected to the third bridge arm upper bridge source pin 9f and the power transfer base island 5 nearby;

[0051] The gate of the third bridge arm N-type MOSFET 13c is connected to the third bridge arm lower bridge gate pin 10e, and its source is respectively connected to the third bridge arm lower bridge source pin 10f and the ground transfer base island 6 nearby;

[0052] Each electrode is connected according to the three-phase full-bridge circuit to realize the electrical connection of the three-phase full-bridge. Compared with the common double-tube module that splices and packages two MOSFETs and requires three such devices to realize the drive of the three-phase motor, in this embodiment, six MOSFETs are integrated into one module, which further improves the integration and reduces the PCB board space. In this embodiment, the specification of the three-phase full-bridge drive power integrated module is 12mm*10mm.

[0053] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.

Claims

1. A three-phase full-bridge drive power integrated module, characterized in that: It includes a transfer base island metal frame, an upper bridge control pin frame, a lower bridge control pin frame, a metal bridge arm frame and a number of bridge arm power tubes; The metal bridge arm frame comprises a first bridge arm frame, a second bridge arm frame and a third bridge arm frame arranged in parallel; The first bridge arm frame, the second bridge arm frame and the third bridge arm frame are used to set corresponding bridge arm power tubes and extend output pins to the module end; The transfer base island metal frame includes a power transfer base island and a ground transfer base island, the power transfer base island and the ground transfer base island are respectively located on both sides of the metal bridge arm frame, and extend VDD pins and VSS pins near the end of the module to facilitate the nearby connection of the bridge arm power tube; The upper bridge control pin frame is located on the side where the VDD pin of the module is located, and the lower bridge control pin frame is located on the side where the VSS pin of the module is located, and is respectively connected to each bridge arm power tube nearby to provide control signals to the bridge arm power tube; The package body is used to package the base island metal frame, the upper bridge control pin frame, the lower bridge control pin frame, the metal bridge arm frame and a plurality of bridge arm power tubes.

2. A three-phase full-bridge drive power integrated module according to claim 1, characterized in that: The transfer base island metal frame is a half-etched structure, wherein the heights of the VDD pin and the VSS pin are both greater than the heights of the power transfer base island and the ground transfer base island body, and the power transfer base island and the ground transfer base island are encapsulated inside the package body.

3. A three-phase full-bridge drive power integrated module according to claim 1, characterized in that: The upper bridge control lead frame, the lower bridge control lead frame and each bridge arm power tube are connected via bonding wires.

4. The three-phase full-bridge drive power integrated module according to claim 1, characterized in that: The length direction of the adapter base island metal frame is parallel to the length direction of the module, and the length is not less than half of the overall outer width of the bridge arm power tube layout area.

5. The three-phase full-bridge drive power integrated module according to claim 1, characterized in that: The thickness of the transfer base island metal frame does not exceed 5 mm, and the packaging body is an epoxy resin plastic packaging structure.

6. A three-phase full-bridge drive power integrated module according to any one of claims 1 to 5, characterized in that: In the first bridge arm frame, the second bridge arm frame and the third bridge arm frame, the bridge arm power tubes set in any bridge arm frame include N-type MOSFET and P-type MOSFET, and the P-type MOSFET is set at one end close to the VDD pin in the module, and the N-type MOSFET is set at one end close to the VSS pin in the module.

7. A three-phase full-bridge drive power integrated module according to claim 6, characterized in that: The upper bridge control pin frame and the lower bridge control pin frame both include corresponding gate pins and source pins of the bridge arm power tube, which are respectively used to connect the gate and source of the corresponding bridge arm power tube.

8. The three-phase full-bridge drive power integrated module according to claim 7, characterized in that: The drain of any bridge arm power tube is connected to one of the first bridge arm frame, the second bridge arm frame and the third bridge arm frame, and provides output to the outside through the output pin; The gate of any bridge arm power tube is connected to the corresponding gate pin in the upper bridge lead frame or the lower bridge lead frame; The source of any bridge arm power tube is connected to the corresponding source pin in the upper bridge lead frame or the lower bridge lead frame.

9. The three-phase full-bridge drive power integrated module according to claim 8, characterized in that: The length of the second bridge arm frame is greater than that of the first bridge arm frame and the third bridge arm frame; the output pins of the metal bridge arm frame are generally parallel to the length direction of the adapter base island, and the output pins of the first bridge arm frame and the output pins of the third bridge arm frame respectively extend to one side of the module end, and the output pins of the second bridge arm frame extend to both sides to the module end.

10. A three-phase full-bridge drive power integrated module according to claim 9, characterized in that: The output pins of the metal bridge arm frame are generally parallel to the length direction of the adapter base island, and the output pins of the first bridge arm frame and the output pins of the third bridge arm frame extend to one side of the module end respectively, and the output pins of the second bridge arm frame extend to both sides to the module end.

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