Shielding ring of semiconductor equipment and physical vapor deposition equipment
By setting multiple coating areas on the shielding ring of the semiconductor device, using the alternating arrangement of silicon oxide and alumina layers, the problems of uneven target deposition and chamber contamination in physical vapor deposition are solved, and the film uniformity and Reduced equipment costs.
Patent Information
- Application Number
- CN202420731526.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-10
- Publication Date
- 2025-01-14
- Estimated Expiration
- 2034-04-10
AI Technical Summary
During the physical vapor deposition process, there are problems of uneven target deposition and impurities contamination in PVD chambers, which affects the quality of film and equipment costs.
A shielding ring of a semiconductor device is designed, made of stainless steel and multiple coating areas are provided on it. Through the alternating arrangement of silicon oxide and aluminum oxide layers and thickness adjustment, the adsorption effect of the target material is improved and impurity pollution is reduced.
The uniformity of the sputtering film and the reduction of equipment costs are achieved, impurity pollution in the PVD chamber is reduced, and equipment costs are reduced.
Smart Images
Figure CN222349115U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a shielding ring of semiconductor equipment and physical vapor deposition equipment. Background Art
[0002] At present, physical vapor deposition (PVD) is a process that can be used to deposit thin films onto substrates. PVD technology has been widely used in the field of integrated circuit (IC) manufacturing due to its stable process, flexible technology, and suitability for large-scale production. PVD processing usually uses ions from a plasma to bombard a target including a source material, so that the source material is sputtered from the target. The sputtered source material is then accelerated toward the substrate to be processed, resulting in the deposition of the source material with or without reaction with other reactants. Therefore, there is room for improvement. Utility Model Content
[0003] The utility model provides a shielding ring of semiconductor equipment and physical vapor deposition equipment to solve the technical problems existing in the physical vapor deposition process.
[0004] The utility model provides a shielding ring for semiconductor equipment, comprising:
[0005] a shielding ring body, wherein the shielding ring is provided with a plurality of coating areas; and
[0006] A ring body base, connected to the bottom of the shielding ring body;
[0007] Wherein, a plurality of coating areas are continuously arranged along the axial direction of the shielding ring body.
[0008] In an embodiment of the present invention, the coating region includes a silicon oxide layer region and an aluminum oxide layer region.
[0009] In an embodiment of the present invention, the number of the silicon oxide layer regions is equal to the number of the aluminum oxide layer regions.
[0010] In one embodiment of the present invention, the number of the coating areas is two. In the two coating areas, the silicon oxide layer area is located at an end away from the ring base, and the aluminum oxide layer area is located at an end close to the ring base.
[0011] In an embodiment of the present invention, when the number of the coating regions is greater than two, the silicon oxide layer regions and the aluminum oxide layer regions are alternately arranged.
[0012] In an embodiment of the present invention, the thickness of the coating area is in the range of 50 um to 200 um.
[0013] In an embodiment of the present invention, a material opening is formed on the shielding ring body, and the material opening is in a rectangular shape.
[0014] The utility model also provides a physical vapor deposition device, wherein the physical vapor deposition device comprises the shielding ring as described in any one of the above items.
[0015] In one embodiment of the utility model, it also includes a chamber body, a carrier, a target, an air intake mechanism and an air exhaust mechanism, wherein the carrier, the target, the shielding ring and the air intake mechanism are arranged in the internal space of the chamber body, and the air exhaust mechanism is arranged at the bottom of the chamber body.
[0016] In an embodiment of the present invention, the top of the shielding ring surrounds the target, and the bottom of the shielding ring surrounds the carrier.
[0017] In summary, the utility model provides a shielding ring and physical vapor deposition equipment for semiconductor equipment, which have the following beneficial effects: the shielding ring of the utility model can be made of an integrally formed material, which can reduce the impurity pollution to the PVD chamber, and has the advantages of low manufacturing cost and simple molding process. At the same time, the utility model can also form multiple continuous coatings on the shielding ring, and adjust the adsorption effect of the shielding ring on the target material through the physical properties of different coating materials, which can improve the uniformity of the sputtered film. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 Shown is a schematic structural diagram of a shielding ring of a semiconductor device provided by the utility model.
[0019] Figure 2 It is a schematic diagram showing the layout of the coating area in one embodiment of the present invention.
[0020] Figure 3 It is a schematic diagram showing the arrangement of the coating area in another embodiment of the present invention.
[0021] Figure 4 Shown is a structural schematic diagram of a physical vapor deposition device provided by the utility model.
[0022] Figure Number:
[0023] 100, shielding ring; 110, shielding ring body; 111, silicon oxide layer area; 112, aluminum oxide layer area; 113, material port; 120, ring body base;
[0024] 200, chamber body; 300, stage; 400, target; 500, air inlet mechanism; 600, air outlet mechanism; 700, heater. DETAILED DESCRIPTION
[0025] The following describes the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.
[0026] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and thus the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed at will, and the component layout may also be more complicated.
[0027] In the following description, a large number of details are discussed to provide a more thorough explanation of the embodiments of the present invention. However, it is obvious to those skilled in the art that the embodiments of the present invention can be implemented without these specific details. In other embodiments, well-known structures and devices are shown in the form of block diagrams rather than in detail to avoid making the embodiments of the present invention difficult to understand.
[0028] See also Figures 1 to 4 The utility model provides a shielding ring and physical vapor deposition equipment for semiconductor equipment, which can be applied to the physical vapor deposition process in the semiconductor manufacturing process. The utility model can, for example, use a shielding ring integrally formed of stainless steel material, and set one or more coating areas on the shielding ring, which can reduce PVD chamber pollution and reduce equipment costs. The following is a detailed description through specific embodiments.
[0029] See also Figure 1 , Figure 1The structure diagram of a shielding ring 100 of a semiconductor device provided by the utility model is shown. In one embodiment of the utility model, the shielding ring 100 may include a shielding ring body 110 and a ring body base 120. Among them, the shielding ring body 110 may be in the shape of a thin-walled circular ring. The inner and outer sides of the shielding ring body 110 are provided with coating areas, and the number of coating areas may be one or more. Multiple coating areas are continuously arranged along the axial direction of the shielding ring body 110, so as to completely cover the side of the entire shielding ring body 110. In this embodiment, the shielding ring body 110 and the ring body base 120 can be formed independently or integrally. The shielding ring body 110 and the ring body base 120 can be made of stainless steel or other materials, for example, SUS304 stainless steel, SUS316 stainless steel, etc. The shielding ring body 110 is made of stainless steel instead of quartz, which has the advantages of low molding and manufacturing process requirements and low pollution during use, and can reduce the cost and weight of PVD equipment.
[0030] In one embodiment of the utility model, the material of the coating area may be SiO2 (silicon oxide) or Al2O2 (aluminum oxide). The coating area may be deposited on the inner and outer sides of the shielding ring body 110 by plasma spraying. Plasma spraying, also known as thermal spraying or spray welding, heats and melts materials such as powders or wires, and impacts and adheres to the surface of the substrate or workpiece under high-speed gas conveyance, thereby accumulating and solidifying to form a film thickness or coating area. The final deposit of the plasma spraying method is a dense metal crystal structure and a metallurgical bonding layer formed with the matrix, which has the advantages of good impact resistance, wear resistance, corrosion resistance, and a mirror appearance. In this embodiment, the thickness of the coating area formed by the plasma spraying method may be in the range of 50um to 200um.
[0031] See also Figure 2 , Figure 2 It is shown as a schematic diagram of the layout of the coating area in one embodiment of the utility model. In one embodiment of the utility model, the number of coating areas can be two, one of which is a silicon oxide layer area 111, and the other is an aluminum oxide layer area 112. It should be noted that in the physical vapor deposition process, the end of the shielding ring body 110 close to the target will adsorb more target materials. It is known that SiO2 (silicon oxide) material is less likely to adsorb the target material in the deposition process than Al2O2 (aluminum oxide) material; therefore, when the number of coating areas is two, the silicon oxide layer area 111 can be located at one end away from the ring body base 120, that is, the silicon oxide layer area 111 is closer to the target in the physical vapor deposition process, and the aluminum oxide layer area 112 can be located at one end close to the ring body base 120, that is, the aluminum oxide layer area 112 is farther away from the target in the physical vapor deposition process. Thereby, in the physical vapor deposition process, the target material deposition on the entire shielding ring body 110 is more uniform.
[0032] See also Figure 3 , Figure 3 It is a schematic diagram showing the arrangement of the coating area in another embodiment of the utility model. In one embodiment of the utility model, when the number of coating areas is multiple, the number of silicon oxide layer areas 111 and aluminum oxide layer areas 112 can be equal. Multiple silicon oxide layer areas 111 and multiple aluminum oxide layer areas 112 can be alternately and continuously arranged along the axial direction of the shielding ring body 110, so as to completely cover the side of the entire shielding ring body 110. In this embodiment, the widths of the multiple silicon oxide layer areas 111 and the multiple aluminum oxide layer areas 112 can remain equal, or they can gradually increase or decrease according to a rule.
[0033] See also Figure 4 , Figure 4 Shown is a structural schematic diagram of a physical vapor deposition device provided by the utility model. In one embodiment of the utility model, the physical vapor deposition device may include a chamber body 200, a carrier 300, a target 400, a shielding ring 100, an air intake mechanism 500, an air outlet mechanism 600 and a heater 700. Among them, the chamber body 200 can provide an internal space. The carrier 300 can be used to carry the processed wafer. The target 400 can be used to produce the target material in the physical vapor deposition process. The air intake mechanism 500 can be used to input the reaction gas into the chamber body 200, for example, argon (Ar), helium (He), krypton (Kr), nitrogen (N2), etc. The air outlet mechanism 600 can be used to extract the exhaust gas. The heater 700 can be connected to the bottom of the carrier 300 to heat the wafer being processed.
[0034] See also Figure 4 In one embodiment of the utility model, the carrier 300, the target 400, the shielding ring 100, the air intake mechanism 500 and the heater 700 may be arranged in the internal space of the chamber body 200. Specifically, the air intake mechanism 500, the target 400 and the carrier 300 are arranged in sequence from top to bottom. The top of the shielding ring 100 may surround the target 400, and the bottom of the shielding ring 100 may surround the carrier 300, which can be used to constrain the target material produced in the physical vapor deposition process. A material port 113 may be opened on the shielding ring body 110 of the shielding ring 100. The material port 113 can be used to take and place wafers. The air outlet mechanism 600 may be arranged at the bottom of the chamber body 200.
[0035] In summary, the utility model proposes a shielding ring and physical vapor deposition equipment for semiconductor equipment, which can be used in the physical vapor deposition process in the semiconductor manufacturing process. The shielding ring of the utility model adopts an integrated molding process, and by replacing the original quartz material with stainless steel metal material or other materials, it can reduce the impurity pollution to the PVD chamber, and has the advantages of low manufacturing cost and simple molding process. At the same time, the utility model also forms one or more continuous coatings on the shielding ring, and adjusts the adsorption effect of the shielding ring on the target material through the physical properties of different coating materials, which can improve the uniformity of the sputtered film. Therefore, the utility model effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.
[0036] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the utility model, so they have no substantial technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effect and purpose that can be achieved by the utility model, should still fall within the scope of the technical content disclosed by the utility model. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the utility model. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the utility model without substantial change of the technical content.
[0037] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.
Claims
1. A shielding ring for a semiconductor device, characterized in that: include: A shielding ring body, wherein the shielding ring is provided with a coating area; as well as A ring body base, connected to the bottom of the shielding ring body; Wherein, the coating area is arranged along the axial direction of the shielding ring body.
2. The shield ring of a semiconductor device according to claim 1, characterized in that: The coating region includes a silicon oxide layer region and an aluminum oxide layer region.
3. The shield ring of the semiconductor device according to claim 2, characterized in that: The number of the silicon oxide layer regions is equal to the number of the aluminum oxide layer regions.
4. The shield ring of a semiconductor device according to claim 3, characterized in that: The number of the coating zones is two. In the two coating zones, the silicon oxide layer zone is located at an end away from the ring base, and the aluminum oxide layer zone is located at an end close to the ring base.
5. The shield ring of the semiconductor device according to claim 3, characterized in that: When the number of the coating regions is greater than two, the silicon oxide layer regions and the aluminum oxide layer regions are alternately arranged.
6. The shield ring of a semiconductor device according to claim 2, characterized in that: The thickness of the coating area is in the range of 50um to 200um.
7. The shield ring of a semiconductor device according to claim 1, characterized in that: The shielding ring body is provided with a material opening, and the material opening is in a rectangular shape.
8. A physical vapor deposition device, characterized in that: It comprises the shielding ring as claimed in any one of claims 1 to 7.
9. The physical vapor deposition device according to claim 8, characterized in that: The physical vapor deposition equipment also includes a chamber body, a carrier, a target, an air inlet mechanism and an air outlet mechanism, wherein the carrier, the target, the shielding ring and the air inlet mechanism are arranged in the internal space of the chamber body, and the air outlet mechanism is arranged at the bottom of the chamber body.
10. The physical vapor deposition device according to claim 9, characterized in that: The top of the shielding ring surrounds the target, and the bottom of the shielding ring surrounds the carrier.