Silicon block and device for cutting silicon block

Abstract

The utility model discloses a silicon block and a device for cutting the silicon block, the silicon block comprises a first surface, a second surface and a splicing surface, the first surface is parallel to the second surface, and one end of the first surface is flush with one end of the second surface; the splicing face is connected with the first surface and the second surface at the other ends of the first surface and the second surface, and the end, away from the second surface, of the splicing face obliquely extends towards the other end of the first surface in the arrangement direction of the first surface and the second surface. Wherein the perpendicularity of the splicing surfaces is D, and D is larger than or equal to 0.5 mm and smaller than or equal to 0.7 mm. Therefore, the splicing surfaces extending obliquely are arranged on the silicon blocks, the splicing surfaces of the adjacent silicon blocks are oppositely arranged, and the adhesive layers are arranged between the splicing surfaces of the adjacent silicon blocks, so that the operation of a wire separating net can be avoided, and the sheet output rate is improved. The splicing surfaces are obliquely arranged and the perpendicularity of the splicing surfaces is limited, so that the cutting line is prevented from being bent in the adhesive layer when the silicon block is cut by the cutting line, the abrasion generated when the cutting line is cut is reduced, and the phenomenon of net explosion of a large line bow is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaics, in particular to a silicon block and a device for cutting the silicon block. Background Art

[0002] In the prior art, a lot of edge materials are inevitably produced in the process of squaring cylindrical silicon rods into square rods. The edge materials are now processed into multiple small silicon blocks, and then the multiple silicon blocks are stacked and spliced ​​into a large silicon block. Due to the existence of multiple seams, wire mesh cutting is selected in the current wire cutting process. However, this processing method has many problems: first, there are multiple seams in a whole square rod spliced ​​together. It is time-consuming and labor-intensive to set up a wire mesh at each seam. A skilled operator needs more than an hour to complete this process, which greatly affects production efficiency. Secondly, setting up multiple wire meshes will produce more thick slices, increase process losses, reduce the slice output rate, and cause waste of silicon materials. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the first purpose of the utility model is to provide a silicon block that can avoid the operation of the wire splitting network and reduce the wear of the cutting wire when cutting the silicon block.

[0004] The second object of the utility model is to provide a device for cutting silicon blocks, comprising two moving parts and a cutting line.

[0005] According to the silicon block of the embodiment of the first aspect of the utility model, it includes: a first surface, a second surface and a splicing surface, the first surface is parallel to the second surface, and one end of the first surface is flush with the second surface; the splicing surface is connected to the first surface and the second surface at the other end of the first surface and the second surface, and the end of the splicing surface away from the second surface extends obliquely toward the other end of the first surface along the arrangement direction of the first surface and the second surface; wherein the verticality of the splicing surface is D, and D satisfies: 0.5mm≤D≤0.7mm.

[0006] According to the silicon block of the embodiment of the utility model, by setting an inclined extending splicing surface on the silicon block, the splicing surfaces of adjacent silicon blocks are arranged oppositely, and a glue layer is arranged between the splicing surfaces of adjacent silicon blocks, the operation of dividing the wire net can be avoided and the chip output rate can be improved. The splicing surface is arranged obliquely and the verticality of the splicing surface is limited so that the cutting line can be prevented from bending in the glue layer when the cutting line cuts the silicon block, the wear of the cutting line during cutting is reduced, and the occurrence of large wire bow and net burst phenomenon is avoided.

[0007] In some embodiments, the first surface and the second surface are spaced apart along a first direction, the first surface and the second surface extend along a second direction, the first direction is perpendicular to the second direction; the length of the first surface in the second direction is L 1 , the length of the second surface in the second direction is L 2 , the verticality D, L 1 , L 2 Satisfy: D = L 2 -L 1 .

[0008] In some embodiments, the splicing surface is provided with multiple glue coating areas, and the multiple glue coating areas include: a first glue coating area, a second glue coating area and a third glue coating area, the first glue coating area is arranged adjacent to the first surface; the second glue coating area is arranged adjacent to the second surface; the third glue coating area is located in the middle of the splicing surface, one end of the third glue coating area is connected to the first glue coating area, and the other end of the third glue coating area is connected to the second glue coating area.

[0009] In some embodiments, the third glue coating area is perpendicular to the first glue coating area and the second glue coating area respectively.

[0010] In some embodiments, the width of the first glue coating area and the second glue coating area is W. 1 , the W 1 Meet: 2.8mm≤W 1 ≤3.2mm; the width of the third glue coating area is W 2 , the W 2 Satisfy: 0.9mm≤W 2 ≤1.1mm.

[0011] In some embodiments, the thickness of the glue coating area is H 1 , the H 1 Meet: 0.65mm≤H 1 ≤0.85mm.

[0012] In some embodiments, there are multiple silicon blocks, the joint surfaces of the silicon blocks are opposite to each other, and there is a force F between two silicon blocks, and F satisfies: 24KPa≤F≤30KPa.

[0013] In some embodiments, the thickness of the glue-coated area after extrusion is H 2 , the H 2 Satisfy: 0≤H 2 <0.15mm.

[0014] According to the second aspect of the present invention, the device for cutting the silicon block according to the first aspect of the present invention is characterized in that it includes: two moving parts and a cutting line, wherein the cutting line is connected between two adjacent moving parts to cut the silicon block.

[0015] In some embodiments, the slope of the cutting line is a, and the thickness of the glue-coated area of ​​the silicon block after extrusion is H. 2 , the distance between the two moving parts is b, the width of the silicon block is c, and the a, b, c, H 2 Satisfaction: H 2 =ac / b.

[0016] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0018] Figure 1 Schematic diagram of a silicon block according to an embodiment of the present invention.

[0019] Figure 2 It is a schematic top view of a silicon block according to an embodiment of the utility model.

[0020] Figure 3 It is a schematic diagram of a splicing surface according to an embodiment of the utility model.

[0021] Figure 4 Schematic diagram of a silicon block and a cutting line according to an embodiment of the utility model.

[0022] Reference numerals:

[0023] 10. Silicon block; 11. First surface; 12. Second surface; 13. Joint surface; 14. Glue coating area; 141. First glue coating area; 142. Second glue coating area; 143. Third glue coating area; 15. Glue layer;

[0024] 20. Moving parts; 21. Cutting line;

[0025] A, first direction; B, second direction B; C, third direction. DETAILED DESCRIPTION

[0026] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Figure 1-Figure 4The silicon block 10 according to the embodiment of the present invention is described, comprising: a first surface 11, a second surface 12 and a joint surface 13. The silicon block 10 has a first direction A, a second direction B and a third direction C.

[0027] Specifically, if Figure 1-Figure 3 As shown, the first surface 11 is parallel to the second surface 12, and one end of the first surface 11 is flush with the second surface 12; the splicing surface 13 is connected to the first surface 11 and the second surface 12 at the other end of the first surface 11 and the second surface 12, and the end of the splicing surface 13 away from the second surface 12 extends obliquely toward the other end of the first surface 11 along the arrangement direction of the first surface 11 and the second surface 12; wherein the verticality of the splicing surface 13 is D, and D satisfies: 0.5mm≤D≤0.7mm.

[0028] The splicing surface 13 is connected to the same end of the first surface 11 and the second surface 12 along the second direction B of the silicon block 10. The verticality of the splicing surface 13 refers to the difference in length between the first surface 11 and the second surface 12 on the silicon block 10 along the first direction A. If the verticality of the splicing surface 13 is less than 0.5 mm, the verticality of the splicing surface 13 is too small, and the inclination of the splicing surface 13 is too small, which may easily lead to problems such as uneven force on the cutting line 21 when cutting the silicon block, causing wear and tear, etc. If the verticality of the splicing surface 13 is greater than 0.7 mm, the verticality of the splicing surface 13 is too large, and the inclination of the splicing surface 13 is too large, which may easily lead to increased losses during the production process of the silicon block 10, resulting in waste of silicon materials.

[0029] According to the silicon block 10 of the embodiment of the utility model, by setting an inclined extending splicing surface 13 on the silicon block 10, the splicing surfaces 13 of adjacent silicon blocks 10 are arranged oppositely, and a glue layer 15 is arranged between the splicing surfaces 13 of adjacent silicon blocks 10, the operation of dividing the wire net can be avoided and the chip output rate can be improved. The splicing surface 13 is arranged obliquely and the verticality of the splicing surface 13 is limited so that when the cutting line 21 cuts the silicon block 10, the cutting line 21 is prevented from bending in the glue layer 15, the wear generated when the cutting line 21 is cut is reduced, and the occurrence of the phenomenon of large wire bow and net burst is avoided.

[0030] According to some embodiments of the present invention, Figure 2 As shown, the first surface 11 and the second surface 12 are spaced apart along the first direction A, and the first surface 11 and the second surface 12 extend along the second direction B, and the first direction A is perpendicular to the second direction B; the length of the first surface 11 in the second direction B is L 1 , the length difference of the second surface 12 in the second direction B is L 2 , verticality D, L 1 , L 2 Satisfy: D = L 1 -L 2 .

[0031] The first surface 11 and the second surface 12 are respectively located on both sides of the silicon block 10 along the first direction A, the first surface 11 is located above the second surface 12 along the first direction A of the silicon block 10, the splicing surface 13 is provided on one side of the silicon block 10 along the second direction B, and the splicing surface 13 extends obliquely along the second direction B of the silicon block 10. The upper end of the splicing surface 13 along the first direction A is suitable for connecting with one end of the first surface 11 along the second direction B, the lower end of the splicing surface 13 along the second direction B is suitable for connecting with one end of the second surface 12 along the second direction B, and the splicing surface 13 extends obliquely along the first direction A toward the side close to the other end of the first surface 11 along the second direction B. Therefore, an inclined splicing surface 13 is provided on one side of the silicon block 10 along the second direction B, which facilitates the cutting of the silicon block 10 by the cutting line 21, facilitates the processing of the silicon block 10, and can also extend the service life of the cutting line 21.

[0032] According to some embodiments of the present invention, Figure 3 As shown, the joint surface 13 is provided with a plurality of glue coating areas 14, and the plurality of glue coating areas 14 include: a first glue coating area 141, a second glue coating area 142 and a third glue coating area 143, the first glue coating area 141 is arranged adjacent to the first surface 11; the second glue coating area 142 is arranged adjacent to the second surface 12; the third glue coating area 143 is located in the middle of the joint surface 13, one end of the third glue coating area 143 is connected to the first glue coating area 141, and the other end of the third glue coating area 143 is connected to the second glue coating area 142.

[0033] The joint surface 13 has a length direction ( Figure 3 ) and height direction ( Figure 3 In the vertical direction of the splicing surface 13, the first glue coating area 141 and the second glue coating area 142 extend along the length direction of the splicing surface 13, and the first glue coating area 141 is arranged at the upper end of the splicing surface 13 along the height direction and is adjacent to the first surface 11, and the second glue coating area 142 is arranged at the lower end of the splicing surface 13 along the height direction and is adjacent to the second surface 12. The third glue coating area 143 extends along the height direction of the splicing surface 13, and the third glue coating area 143 is arranged between the first glue coating area 141 and the second glue coating area 142. Therefore, the provision of multiple glue coating areas 14 on the splicing surface 13 can make the bonding between adjacent silicon blocks 10 more firm, make the distribution of glue on the splicing surface 13 more uniform, and reduce the probability of hollow glue, bubbles, etc. in the glue layer 15.

[0034] According to some embodiments of the present invention, Figure 3As shown, the third glue coating area 143 is perpendicular to the first glue coating area 141 and the second glue coating area 142. The upper end of the third glue coating area 143 along the height direction is suitable for connecting with the middle of the first glue coating area 141 along the length direction, and the lower end of the third glue coating area 143 along the height direction is suitable for connecting with the middle of the second glue coating area 142 along the length direction, that is, the first glue coating area 141, the second glue coating area 142 and the third glue coating area 143 are in an I-shaped structure. Therefore, the third glue coating area 143 and the first glue coating area 141 and the second glue coating area 142 are distributed on the splicing surface 13 in an I-shaped structure, so that the glue can be evenly distributed on the splicing surface 13, ensuring the bonding strength between adjacent silicon blocks 10.

[0035] According to some embodiments of the present invention, Figure 3 As shown, the width of the first glue coating area 141 and the second glue coating area 142 is W 1 , W 1 Meet: 2.8mm≤W 1 ≤3.2mm; the width of the third glue coating area 143 is W 2 , W 2 Satisfy: 0.9mm≤W 2 ≤1.1mm.

[0036] If the width of the first glue coating area 141 and the second glue coating area 142 is less than 0.28mm, and the width of the third glue coating area 143 is less than 0.9mm, the amount of glue in the first glue coating area 141, the second glue coating area 142 and the third glue coating area 143 is too little, and there is a risk of weak bonding. If the width of the first glue coating area 141 and the second glue coating area 142 is greater than 3.2mm, and the width of the third glue coating area 143 is greater than 1.1mm, the width of the first glue coating area 141, the second glue coating area 142 and the third glue coating area 143 is too wide, which may easily cause the cutting line 21 to cut the silicon block 10, thereby increasing the loss of cutting force and causing large wire bow and mesh burst. For example, W 1 =3mm, W 2 =1 mm. Thus, by limiting the widths of the first glue coating area 141 , the second glue coating area 142 and the third glue coating area 143 , a certain protection effect can be played on the cutting line 21 while ensuring the bonding strength.

[0037] According to some embodiments of the present invention, the thickness of the glue coating area 14 is H 1 , H 1 Meet: 0.65mm≤H 1 ≤0.85mm. If the thickness of the glue coating area 14 is less than 0.65mm, the glue amount in the glue coating area 14 will be too little, resulting in insufficient bonding between the silicon blocks 10; if the thickness of the glue coating area 14 is greater than 0.85mm, the glue amount in the glue coating area 14 will be too much, resulting in increased wear when the cutting line 21 cuts the glue layer 15. For example, H1 =0.75mm. Therefore, limiting the thickness at the glue coating area 14, that is, limiting the glue amount at the glue coating area 14, is beneficial to protecting the cutting line 21 under the premise of ensuring the bonding strength between the silicon blocks 10, and controlling the glue amount to prevent waste caused by excessive glue.

[0038] According to some embodiments of the present invention, Figure 1 As shown, there are multiple silicon blocks 10, and the joint surfaces 13 of the silicon blocks 10 are opposite to each other. There is a force F between the two silicon blocks 10, and F satisfies: 24KPa≤F≤30KPa.

[0039] The joint surfaces 13 of adjacent silicon blocks 10 are arranged opposite to each other along the second direction B, and the adjacent joint surfaces 13 are bonded together by glue. Taking two silicon blocks 10 as an example, after glue is applied to the first glue-coated area 141, the second glue-coated area 142, and the third glue-coated area 143 of the joint surface 13 of one silicon block 10, the other silicon block 10 is placed on the silicon block 10 coated with glue, and a force is applied to the silicon block 10. The force F squeezes the glue between the joint surfaces 13 of the two silicon blocks 10, causing the glue to overflow to both sides of the glue-coated area 14.

[0040] Therefore, a certain force is applied to the two silicon blocks 10 so that the glue flows under the external force to increase the bonding area between the silicon blocks 10. The size of the force is limited to facilitate the control of the overflow of the glue, ensure the thickness of the glue after squeezing, and ensure the bonding firmness between the silicon blocks 10.

[0041] According to some embodiments of the present invention, Figure 1 and Figure 4 As shown, the thickness of the glue coating area 14 after extrusion is H 2 , H 2 Satisfy: 0≤H 2 After the silicon block 10 is squeezed by an external force, the glue layer 15 is solidified, and the glue overflow at the edge of the glue layer 15 is ground off after solidification, so that the thickness of the glue layer 15 at the glue coating area 14 after solidification is H 2 Thus, the thickness of the glue coating area 14 after extrusion is limited, that is, the thickness of the glue layer 15 between the silicon blocks 10 is limited, so as to ensure the uniformity of the thickness of the glue layer 15 between the silicon blocks 10 and further ensure the bonding strength between the silicon blocks 10 .

[0042] According to the second embodiment of the utility model, the device for cutting the silicon block 10 according to the first embodiment of the utility model is as follows: Figure 4 As shown, it includes: two moving parts 20 and a cutting line 21 , and the cutting line 21 is connected between two adjacent moving parts 20 to cut the silicon block 10 .

[0043] The cutting line 21 extends obliquely along the first direction A of the silicon block 10, and the inclination of the cutting line 21 is consistent with the verticality of the splicing surface 13. The cutting line 21 is arranged below the silicon block 10 along the third direction C. Two moving parts 20 are respectively arranged at both ends of the cutting line 21 along the first direction A of the silicon block 10. The two moving parts 20 drive the cutting line 21 to move along the third direction C of the silicon block 10, and the cutting line 21 cuts the silicon block 10 from bottom to top along the third direction C of the silicon block 10. At least one cutting line 21 is opposite to the glue layer 15 between the splicing surfaces 13 along the third direction C of the silicon block 10 to cut the glue layer 15.

[0044] According to the device for cutting the silicon block 10 of the embodiment of the utility model, the moving part 20 is suitable for driving the cutting line 21 to move to cut the silicon block 10 so as to cut the silicon block 10 into multiple silicon slices. The cutting line 21 and the glue layer 15 between the splicing surface 13 are relative and have the same inclination, which can prevent the cutting line 21 from bending in the glue layer 15 when cutting the glue layer 15, reduce the wear of the cutting line 21, enhance the cutting force of the cutting line 21, avoid the large line bow and burst phenomenon of the cutting line 21, extend the service life of the cutting line 21, and improve the working efficiency of cutting the silicon block 10.

[0045] According to some embodiments of the present invention, Figure 4 As shown, the slope of the cutting line 21 is a, and the thickness of the glue-coated area 14 of the silicon block 10 after extrusion is H 2 , the distance between the two moving parts 20 is b, the width of the silicon block 10 is c, a, b, c, H2 satisfy: H 2 =ac / b.

[0046] Therefore, by controlling the relative relationship between the slope of the cutting line 21, the thickness of the glue-coated area 14 of the silicon block 10 after extrusion, the distance between the two moving parts 20, and the width of the silicon block 10, when the cutting line 21 cuts the silicon block 10, only one cutting line 21 falls steadily into the glue layer 15 between the two silicon blocks 10 to stably cut the glue layer 15, and the bow difference of the cutting line 21 on both sides of the glue layer 15 is consistent, which can effectively avoid high lines, jump lines, and broken lines of the cutting line 21, thereby ensuring the cutting efficiency of the device for cutting the silicon block 10.

[0047] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0048] In the description of the present utility model, "first feature" and "second feature" may include one or more of the features. In the description of the present utility model, "plurality" means two or more. In the description of the present utility model, the first feature "above" or "below" the second feature may include the first and second features being in direct contact, or the first and second features being in contact not directly but through another feature between them. In the description of the present utility model, the first feature "above", "above" and "above" the second feature include the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.

[0049] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example.

[0050] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A silicon block, characterized in that: include: a first surface; a second surface, wherein the first surface is parallel to the second surface, and one end of the first surface is flush with one end of the second surface; a splicing surface, the splicing surface being connected to the first surface and the second surface at the other end of the first surface and the second surface, and the end of the splicing surface away from the second surface extending obliquely toward the other end of the first surface along the arrangement direction of the first surface and the second surface; The verticality of the joint surface is D, and D satisfies: 0.5mm≤D≤0.7mm.

2. The silicon block according to claim 1, characterized in that The first surface and the second surface are spaced apart along a first direction, the first surface and the second surface extend along a second direction, and the first direction is perpendicular to the second direction; The length of the first surface in the second direction is L1, the length of the second surface in the second direction is L2, and the perpendicularities D, L1, and L2 satisfy: D=L2-L1.

3. The silicon block according to claim 1, characterized in that The splicing surface is provided with a plurality of glue coating areas, and the plurality of glue coating areas include: a first glue coating area, the first glue coating area being disposed adjacent to the first surface; a second glue coating area, the second glue coating area being disposed adjacent to the second surface; The third glue coating area is located in the middle of the splicing surface, one end of the third glue coating area is connected to the first glue coating area, and the other end of the third glue coating area is connected to the second glue coating area.

4. The silicon block according to claim 3, characterized in that The third glue coating area is perpendicular to the first glue coating area and the second glue coating area respectively.

5. The silicon block according to claim 3, characterized in that The width of the first glue coating area and the second glue coating area is W1, and W1 satisfies: 2.8 mm ≤ W1 ≤ 3.2 mm; The width of the third glue coating area is W2, and W2 satisfies: 0.9mm≤W2≤1.1mm.

6. The silicon block according to claim 3, characterized in that The thickness of the glue coating area is H1, and H1 satisfies: 0.65mm≤H1≤0.85mm.

7. The silicon block according to claim 3, characterized in that There are multiple silicon blocks, the joint surfaces of the silicon blocks are opposite to each other, and there is a force F between two silicon blocks, and F satisfies: 24KPa≤F≤30KPa.

8. The silicon block according to claim 7, characterized in that The thickness of the glue coating area after extrusion is H2, and H2 satisfies: 0≤H2<0.15mm.

9. A device for cutting a silicon block according to any one of claims 1 to 8, characterized in that: include: Two moving parts; A cutting line is connected between two adjacent moving parts to cut the silicon block.

10. The device according to claim 9, characterized in that The slope of the cutting line is a, the thickness of the glue-coated area of ​​the silicon block after extrusion is H2, the distance between the two moving parts is b, the width of the silicon block is c, and a, b, c, and H2 satisfy: H2=ac / b.

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