Diamond single crystal titanizing vacuum mechanism for high-power semiconductor laser module

By performing multiple temperature control adjustment and buffer cooling and cutting of diamond after titanium plating, the problems of difficulty in cutting diamond and low material removal in titanium plating operations are solved, and the effect of improving the efficiency of titanium plating operations is achieved.

CN222476727UActive Publication Date: 2025-02-14WUXI QIYONG SEMICON TECH CO LTD
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Patent Information

Application Number
CN202421058645.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-15
Publication Date
2025-02-14
Estimated Expiration
2034-05-15

AI Technical Summary

Technical Problem

During the titanium plating operation, the surface temperature of the diamond is too high, which leads to difficulty in cutting operation, low safety in material extraction, and affects the efficiency of titanium plating operation.

Method used

Multiple temperature control and adjustment technology is adopted to buffer and cool the diamond after titanium plating is discharged, and the cutting time is extended through multiple cooling methods to ensure that the diamond is cooled to the appropriate temperature, facilitate safe material collection, and improve the efficiency of titanium plating.

Benefits of technology

The diamond is discharged for a longer time, and the diamond is cooled to a suitable temperature through multiple heat exchange cooling, which improves the safety of operators' material collection and improves the efficiency of titanium plating operations.

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Abstract

The utility model discloses a diamond single crystal titanium plating vacuum mechanism for a high-power semiconductor laser module, which comprises a titanium plating case, and a vacuum cavity for vacuum titanium plating of diamond and a blanking operation cavity for blanking of the titanium-plated diamond are arranged in the titanium plating case. A plurality of vacuum pumps used for vacuumizing the vacuum cavity are arranged outside the titanizing machine box, and a discharging barrel used for conveniently taking the titanized diamond is arranged at the position, close to the bottom of the vacuum cavity, of the titanizing machine box. A multi-temperature regulation and control mechanism used for carrying out multi-regulation and control on the blanking temperature of the titanized diamond is arranged in the blanking operation cavity, so that multi-temperature control and regulation are carried out on the titanized diamond blanking, and the titanized diamond is buffered, cooled and blanked; and multiple heat exchange cooling is carried out while the discharging time of the diamond is prolonged, it is guaranteed that the diamond is discharged after being cooled to the proper temperature, the material taking safety of operators is improved, and the titanium plating operation efficiency is improved.
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Description

Technical Field

[0001] The utility model relates to the field of titanium plating technology, in particular to a diamond single crystal titanium plating vacuum mechanism for a high-power semiconductor laser module. Background Art

[0002] Titanium plating is a chemical method to make titanium metal adhere to the surface of other objects. The titanium coating formed has excellent corrosion resistance and can be used to protect the plated object and improve the surface wear resistance. The most commonly used iron-based and copper-based binders are used as the matrix, and unplated and titanium-plated diamonds are added respectively. Then, iron-based and copper-based binder matrices and iron-based and copper-based binder diamond segments are obtained by hot pressing and sintering at different sintering temperatures. The effect of titanium plating on the diamond surface on the holding force of the metal binder diamond segment is studied by testing the bending strength of the segment and observing the microscopic morphology of the segment section.

[0003] There are many pits on the diamond surface, and the diamond surface has flaky shedding phenomenon, and there are obvious grooves between the interfaces, indicating that the bonding state between the unplated diamond and the binder is poor. If there is no coating layer on the diamond surface, the elements in the iron alloy will cause serious chemical erosion on the diamond surface during high-temperature sintering (such as graphitizing the diamond surface), thereby affecting the binder's holding power on it and the strength of the diamond. After the diamond surface is titanium-plated, the binder firmly holds the diamond by relying on the intermediary role of the titanium-plated layer. This shows that the use of titanium-plated diamond can improve the bonding state between the iron-based binder and the diamond interface and enhance the binder's holding power on the diamond.

[0004] At present, diamond titanium plating is to use a vacuum pump to remove the gas in the chamber, reduce the air pressure to the required vacuum degree, heat the object to a certain temperature, increase the deposition speed and adhesion of the titanium film, heat the titanium source material in a vacuum state, and deposit titanium vapor on the surface of the object by physical vapor deposition. In a high vacuum environment, titanium vapor is deposited on the surface of the object in molecular form to form a titanium film, which improves the bending strength and holding force coefficient of the diamond surface.

[0005] However, during the titanium plating process, extremely high temperature remains on the surface of the diamond, which makes it difficult for operators to pick up the diamond during the material removal process. The safety of material removal cannot be guaranteed, or equipment is needed to remove the diamond, affecting the efficiency of the titanium plating operation. The present application aims to perform multiple temperature control adjustments on the diamond titanium plating material removal, and buffer cool the diamond after titanium plating to extend the diamond material removal time while performing multiple heat exchange cooling to ensure that the diamond is cooled to a suitable temperature for material removal, thereby improving the safety of the operator's material removal and improving the efficiency of the titanium plating operation. Utility Model Content

[0006] The utility model aims to provide a diamond single crystal titanium-plated vacuum mechanism for a high-power semiconductor laser module to solve the problems in the prior art.

[0007] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0008] A diamond single crystal titanium-plated vacuum mechanism for a high-power semiconductor laser module comprises a titanium-plated chassis, wherein a vacuum chamber for vacuum titanium-plating diamonds and a material unloading operation chamber for unloading titanium-plated diamonds are arranged inside the titanium-plated chassis, a plurality of vacuum pumps for evacuating the vacuum chamber are arranged outside the titanium-plated chassis, a material unloading barrel for conveniently taking out titanium-plated diamonds is arranged near the bottom of the vacuum chamber of the titanium-plated chassis, the material unloading barrel is arranged between the vacuum chamber and the material unloading operation chamber, a multiple temperature control mechanism for multiple temperature control of the unloading temperature of titanium-plated diamonds is arranged inside the material unloading operation chamber, and the multiple temperature control device comprises a plurality of temperature control plates for temperature control of the unloading diamonds.

[0009] By adopting the above technical scheme: the titanium-plated chassis can titanium-plate the diamond, the vacuum chamber is used for titanium plating, the unloading operation box can unload and cool the diamond, which is convenient for taking out the diamond after cooling, the unloading barrel can conveniently take out the titanium-plated diamond and accelerate the unloading process, the multiple temperature control mechanisms can buffer and cool the diamond after titanium plating through multiple cooling methods, and the temperature control plate can control the temperature of the unloaded diamond.

[0010] Further configuration: a plurality of tilting platforms for accelerating diamond unloading are provided near the position of the vacuum chamber near the unloading barrel, a plurality of tilting platforms are provided near the position of the vacuum chamber near the unloading barrel, a unloading port is provided inside the unloading barrel, the unloading port is in a conical table shape, and a square plug valve for controlling diamond unloading is provided near the position of the unloading port near the unloading operation chamber.

[0011] By adopting the above technical solution: the tilting table is set to cover the position of the discharge port. By tilting the discharge port, the discharge of diamonds can be accelerated to avoid the accumulation of diamonds inside the vacuum chamber. The discharge port is in a conical table shape, which can also accelerate the discharge of titanium-plated diamonds. The square plug valve can control the discharge of diamonds.

[0012] Further arrangement: The multiple temperature control mechanism includes a pre-heat exchange plate for pre-treating the diamonds being unloaded by heat exchange, the pre-heat exchange plate is arranged on both sides of the unloading port and is relatively inclined, a plurality of heat exchange fans for air-cooling and heat-exchanging the diamonds being unloaded are arranged inside the pre-heat exchange plate, and dust-proof filter plates for preventing dust from being unloaded by diamonds are arranged on both sides of the unloading operation chamber close to the pre-heat exchange plate, and the dust-proof filter plates are detachably connected to the unloading operation chamber and the pre-heat exchange plate respectively.

[0013] By adopting the above technical scheme: the pre-heat exchange plate can perform heat exchange pretreatment on the unloaded diamonds, the contactless heat dissipation by air cooling can prevent the unloaded diamonds from being too high in temperature, the inclined pre-heat exchange plate can concentrate the heat exchange fan to perform heat exchange cooling on the diamonds at the unloading port more centrally, the dust-proof filter plate can prevent the unloading of diamonds from dust, and at the same time, it can prevent the unloaded high-temperature diamonds from contacting the pre-heat exchange plate and causing equipment damage.

[0014] Further arrangement: a plurality of temperature control plates are overlapped on both sides of the unloading operation chamber, and the overlapped temperature control plates are relatively inclined, a buffer groove is provided inside the temperature control plate for buffering the falling diamonds, a plurality of water cooling tubes are provided inside the temperature control plate for cooling the temperature control plate, and circulating refrigeration water tanks for circulating refrigeration of the plurality of water cooling tubes are provided on both sides of the titanium-plated chassis near the unloading operation chamber.

[0015] By adopting the above technical solution: the temperature control plates are overlapped to allow the falling diamonds to overlap and fall on the temperature control plates for buffer cooling, the buffer grooves are used to buffer and support the discharge of diamonds, the circulating refrigeration water tank cools the water cooling pipes inside the temperature control plates, and at the same time, the water cooling pipes are used to cool the diamonds during the buffering process of discharge.

[0016] Further configuration: a plurality of cooling partition plates for separating and cooling the diamonds for feeding are provided at the bottom of the feeding operation chamber near the temperature control plate, refrigeration fins are provided inside the cooling partition plates, a feeding port for separating and cooling the diamonds for feeding is provided between the cooling partition plates and adjacent cooling partition plates, and a refrigerator for cooling the refrigeration fins is provided near the plurality of cooling partition plates in the feeding operation chamber.

[0017] By adopting the above technical solution: the cooling partition plate can separate the feeding port for diamond feeding to delay the feeding speed of buffer diamond, and the diamond for buffering feeding is cooled by the cooling partition plate, so that the temperature of the diamond can be controlled.

[0018] Further configuration: a plurality of heating tubes for heating the titanium-plated chassis are arranged on the side wall of the vacuum chamber, and asbestos boards for heat insulation are laid near the heating tubes on the titanium-plated chassis.

[0019] By adopting the above technical solution: the heating tube can heat the inside of the vacuum chamber during the titanium plating operation, and the asbestos board can store and keep the temperature inside the vacuum chamber, which is convenient for the titanium plating operation of diamond.

[0020] Compared with the prior art, the beneficial effects of the utility model are: it aims to perform multiple temperature control adjustments on the diamond titanium plating feeding, and through buffer cooling of the diamond after titanium plating, the diamond feeding time is extended while multiple heat exchange cooling is performed to ensure that the diamond is cooled to a suitable temperature for feeding, improve the safety of the operator in taking the material, and improve the efficiency of the titanium plating operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to make the content of the utility model more clearly understood, the utility model is further described in detail below based on specific embodiments and in conjunction with the accompanying drawings.

[0022] Figure 1 This is a schematic diagram of the appearance structure of the diamond single crystal titanium-plated vacuum mechanism for the high-power semiconductor laser module of the utility model;

[0023] Figure 2 It is a partial cross-sectional view of a diamond single crystal titanium-plated vacuum mechanism for a high-power semiconductor laser module of the utility model;

[0024] Figure 3 It is an overall cross-sectional view of the diamond single crystal titanium-plated vacuum mechanism for the high-power semiconductor laser module of the utility model.

[0025] In the figure, 1. titanium-plated chassis; 2. vacuum chamber; 3. unloading operation chamber; 4. heating tube; 5. unloading barrel; 6. tilting table; 7. square plug valve; 8. pre-heat exchange plate; 9. heat exchange fan; 10. dust filter plate; 11. temperature control board; 12. circulating refrigeration water tank; 13. cooling partition plate; 14. refrigerator; 15. material taking port. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0027] See also Figures 1 to 3In the embodiment of the utility model, a diamond single crystal titanium-plated vacuum mechanism for a high-power semiconductor laser module includes a titanium-plated chassis 1, a vacuum chamber 2 for vacuum titanium-plating diamonds and a material unloading operation chamber 3 for unloading the titanium-plated diamonds are provided inside the titanium-plated chassis 1, a plurality of vacuum pumps for evacuating the vacuum chamber 2 are provided outside the titanium-plated chassis 1, a plurality of heating tubes 4 for heating the titanium-plated chassis 1 are provided on the side wall of the vacuum chamber 2, an asbestos board for heat insulation is laid near the heating tube 4 of the titanium-plated chassis 1, the heating tube 4 can heat the inside of the vacuum chamber 2 during the titanium-plating operation, and the temperature inside the vacuum chamber 2 can be stored and kept warm through the asbestos board, which is convenient for the titanium-plating operation of the diamonds.

[0028] The top of the titanium-plating chassis 1 is provided with a feed port for feeding the diamond to be titanium-plated. The titanium-plating chassis 1 can perform titanium-plating on the diamond, and the vacuum chamber 2 is evacuated to perform titanium-plating. The unloading operation box can perform unloading and cooling operations on the diamond, so as to facilitate the removal of the diamond after cooling.

[0029] A discharge barrel 5 for conveniently taking out the titanium-plated diamonds is provided near the bottom of the vacuum chamber 2 of the titanium-plated chassis 1. The discharge barrel 5 is arranged between the vacuum chamber 2 and the discharge operation chamber 3. The discharge barrel 5 can conveniently take out the titanium-plated diamonds and accelerate the discharge process. A plurality of tilting tables 6 for accelerating the discharge of diamonds are provided near the discharge barrel 5 of the vacuum chamber 2. The plurality of tilting tables 6 are arranged near the discharge barrel 5 of the vacuum chamber 2. A discharge port is provided inside the discharge barrel 5. The discharge port is in the shape of a cone. A square gate valve 7 for controlling the discharge of diamonds is provided near the discharge operation chamber 3.

[0030] The tilting table 6 is arranged to cover the position of the discharge port. By tilting the discharge port, the discharge of diamonds can be accelerated to avoid the accumulation of diamonds inside the vacuum chamber 2. The discharge port is in a conical table shape, which can also accelerate the discharge of titanium-plated diamonds. The square gate valve 7 can control the discharge of diamonds.

[0031] A multiple temperature control mechanism is provided inside the material feeding operation chamber 3 for multiple control of the material feeding temperature of the titanium-plated diamond. The multiple temperature control mechanism can buffer and cool the titanium-plated diamond by multiple cooling methods.

[0032] The multiple temperature control mechanisms include a pre-heat exchange plate 8 for pre-treating the diamonds being fed, the pre-heat exchange plate 8 is arranged on both sides of the feeding port and is relatively inclined, a plurality of heat exchange fans 9 for air-cooling and heat-exchanging the diamonds being fed are arranged inside the pre-heat exchange plate 8, and dust-proof filter plates 10 for preventing dust from being discharged from the diamonds are arranged on both sides of the feeding operation chamber 3 near the pre-heat exchange plate 8, and the dust-proof filter plates 10 are detachably connected to the feeding operation chamber 3 and the pre-heat exchange plate 8 respectively.

[0033] The pre-heat exchange plate 8 can perform heat exchange pretreatment on the unloaded diamonds, and the contactless heat dissipation by air cooling can prevent the unloaded diamonds from being too hot. The inclined pre-heat exchange plate 8 can make the heat exchange fan 9 more concentrated to perform heat exchange cooling on the diamonds at the unloading port. The dustproof filter plate 10 can prevent the unloading of diamonds from dust, and at the same time, it can prevent the unloaded high-temperature diamonds from contacting the pre-heat exchange plate 8 and causing equipment damage.

[0034] The multiple temperature control device includes several temperature control plates 11 for temperature control of the diamonds being unloaded. The temperature control plates 11 can control the temperature of the diamonds being unloaded. Several temperature control plates 11 are overlapped on both sides of the unloading operation chamber 3, and the overlapping temperature control plates 11 are relatively inclined. A buffer groove for buffering the falling diamonds is provided inside the temperature control plate 11. Several water-cooling pipes for cooling the temperature control plate 11 are provided inside the temperature control plate 11. A circulating refrigeration water tank 12 for circulating refrigeration of several water-cooling pipes is provided on both sides of the titanium-plated chassis 1 close to the unloading operation chamber 3.

[0035] The temperature control plate 11 is arranged in an overlapping manner so that the falling diamonds overlap and fall on the temperature control plate 11 for buffer cooling. The buffer groove is used to buffer and support the discharge of diamonds. The circulating refrigeration water tank 12 cools the water cooling pipes inside the temperature control plate 11, and at the same time, the water cooling pipes are used to cool the diamonds during the buffering process of discharge.

[0036] A plurality of cooling partition plates 13 for separating and cooling the diamonds for feeding are provided at the bottom of the feeding operation chamber 3 near the temperature control plate 11, a refrigeration plate is provided inside the cooling partition plate 13, a feeding port 15 for separating and cooling the diamonds for feeding is provided between the cooling partition plate 13 and the adjacent cooling partition plate 13, a cover plate for opening the titanium-plated chassis 1 to disassemble and maintain the cooling partition plate 13 is provided near the cooling partition plate 13, and a refrigerator 14 for cooling the refrigeration plate is provided near the cooling partition plates 13 of the feeding operation chamber 3.

[0037] The cooling partition plate 13 can separate the material taking port 15 for diamond feeding to delay the feeding speed of buffer diamonds. The cooling partition plate 13 is used to cool the buffered diamonds so that the temperature of the diamonds can be controlled.

[0038] The working principle of the utility model is as follows: the operator feeds the diamond to be plated with titanium into the vacuum chamber 2 through the feed port, and then evacuates the vacuum chamber 2 through the vacuum pump and the heating tube 4, and then opens the heating tube 4 to plate the diamond surface with titanium. After the titanium plating is completed, the square gate valve 7 is opened to control the discharge of the diamond. By tilting the discharge, the discharge of the diamond can be accelerated to avoid the accumulation of the diamond in the vacuum chamber 2.

[0039] The heat exchange plate 8 performs heat exchange pretreatment on the unloaded diamonds in advance, and the heat exchange fan 9 is turned on to perform centralized air cooling and heat exchange on the unloaded diamonds. After the diamonds are unloaded through air cooling and heat exchange, they are unloaded to the temperature control plate 11. The temperature control plate 11 is arranged to overlap so that the falling diamonds can overlap and fall on the temperature control plate 11 for buffer cooling. The diamonds are cooled during the unloading buffering process through the water cooling pipe inside the temperature control plate 11. When the diamonds are unloaded to the cooling partition plate 13, the cooling partition plate 13 delays the unloading speed of the buffered diamonds, and the cooling partition plate 13 is used to cool the buffered unloading diamonds, so that the diamonds are temperature-controlled again, so that the unloading time of the diamonds is extended while multiple heat exchange cooling is performed to ensure that the diamonds are cooled to a suitable temperature for unloading, thereby improving the safety of the operator in taking the materials and improving the efficiency of the titanium plating operation.

[0040] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present invention. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.

Claims

1. A diamond single crystal titanium-coated vacuum mechanism for a high-power semiconductor laser module, comprising a titanium-coated chassis (1), characterized in that: The titanium-plated chassis (1) is provided with a vacuum chamber (2) for vacuum-plating diamonds with titanium and a material unloading operation chamber (3) for unloading the titanium-plated diamonds. The titanium-plated chassis (1) is provided with a plurality of vacuum pumps for evacuating the vacuum chamber (2). The titanium-plated chassis (1) is provided with a material unloading barrel (5) for conveniently unloading the titanium-plated diamonds near the bottom of the vacuum chamber (2). The material unloading barrel (5) is arranged between the vacuum chamber (2) and the material unloading operation chamber (3). The material unloading operation chamber (3) is provided with a multiple temperature control mechanism for multiple temperature control of the unloading temperature of the titanium-plated diamonds. The multiple temperature control device includes a plurality of temperature control plates (11) for controlling the temperature of the unloaded diamonds.

2. The diamond single crystal titanium-plated vacuum mechanism for high-power semiconductor laser module according to claim 1, characterized in that The vacuum chamber (2) is provided with a plurality of tilting platforms (6) for accelerating the discharge of diamonds at a position close to the discharge barrel (5). The plurality of tilting platforms (6) are arranged at a position close to the discharge barrel (5) of the vacuum chamber (2). A discharge port is provided inside the discharge barrel (5). The discharge port is in the shape of a conical platform. A square gate valve (7) for controlling the discharge of diamonds is provided at a position close to the discharge operation chamber (3).

3. The diamond single crystal titanium-plated vacuum mechanism for high-power semiconductor laser module according to claim 1, characterized in that The multiple temperature control mechanism comprises a pre-heat exchange plate (8) for pre-treating the diamond being fed, the pre-heat exchange plate (8) being arranged on both sides of the feeding port and being relatively inclined, a plurality of heat exchange fans (9) for air-cooling and heat-exchanging the diamond being fed are arranged inside the pre-heat exchange plate (8), and dust-proof filter plates (10) for preventing dust from being discharged from the diamond are arranged on both sides of the feeding operation chamber (3) close to the pre-heat exchange plate (8), and the dust-proof filter plates (10) are detachably connected to the feeding operation chamber (3) and the pre-heat exchange plate (8), respectively.

4. The diamond single crystal titanium-plated vacuum mechanism for a high-power semiconductor laser module according to claim 1, characterized in that The plurality of temperature control plates (11) are overlapped and arranged on both sides of the material discharging operation chamber (3), and the overlapped temperature control plates (11) are relatively inclined. A buffer groove for buffering the falling diamonds is provided inside the temperature control plate (11). A plurality of water cooling pipes for cooling the temperature control plate (11) are provided inside the temperature control plate (11). A circulating refrigeration water tank (12) for circulating refrigeration of the plurality of water cooling pipes is provided on both sides of the titanium-plated chassis (1) near the material discharging operation chamber (3).

5. The diamond single crystal titanium-plated vacuum mechanism for high-power semiconductor laser module according to claim 1, characterized in that A plurality of cooling partition plates (13) for separating and cooling the diamonds for material discharging are provided at the bottom of the material discharging operation chamber (3) near the temperature control plate (11); a refrigeration plate is provided inside the cooling partition plate (13); a material taking port (15) for separating and cooling the diamonds for material discharging is provided between the cooling partition plate (13) and adjacent cooling partition plates (13); and a refrigerator (14) for cooling the refrigeration plate is provided at a position near the plurality of cooling partition plates (13) of the material discharging operation chamber (3).

6. The diamond single crystal titanium-plated vacuum mechanism for a high-power semiconductor laser module according to claim 1, characterized in that The side wall of the vacuum chamber (2) is provided with a plurality of heating tubes (4) for heating the titanium-plated chassis (1), and an asbestos board for heat insulation is laid near the heating tubes (4) of the titanium-plated chassis (1).